H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2011
12/29/2011	US20110316093 Short channel semiconductor devices with reduced halo diffusion
12/29/2011	US20110316089 Semiconductor device with gate-undercutting recessed region
12/29/2011	US20110316087 Mos transistor, manufacturing method thereof, and semiconductor device
12/29/2011	US20110316085 Integrated circuit including a stressed dielectric layer with stable stress
12/29/2011	US20110316084 Fet with replacement gate structure and method of fabricating the same
12/29/2011	US20110316083 FET with Self-Aligned Back Gate
12/29/2011	US20110316082 Soi substrate and manufacturing method thereof
12/29/2011	US20110316080 Fin transistor structure and method of fabricating the same
12/29/2011	US20110316079 Shallow Junction Formation and High Dopant Activation Rate of MOS Devices
12/29/2011	US20110316078 Shielded level shift transistor
12/29/2011	US20110316076 Power MOSFET Device with Self-Aligned Integrated Schottky and its Manufacturing Method
12/29/2011	US20110316075 Trench mosfet with trenched floating gates having thick trench bottom oxide as termination
12/29/2011	US20110316074 Semiconductor device and method for manufacturing the same
12/29/2011	US20110316071 Power semiconductor device
12/29/2011	US20110316070 Charge trapping non-volatile semiconductor memory device and method of making
12/29/2011	US20110316069 Nonvolatile semiconductor memory device
12/29/2011	US20110316068 Flash memory with recessed floating gate
12/29/2011	US20110316067 Electronic device including a tunnel structure
12/29/2011	US20110316066 Semiconductor memory device and method for manufacturing the same
12/29/2011	US20110316065 Nonvolatile semiconductor memory device and method of manufacturing the same
12/29/2011	US20110316064 Semiconductor Memory Devices And Methods Of Forming The Same
12/29/2011	US20110316063 Three dimensional memory and methods of forming the same
12/29/2011	US20110316062 Semiconductor device
12/29/2011	US20110316060 Electronic device including a nonvolatile memory cell
12/29/2011	US20110316059 Flexible ferroelectric memory device and manufacturing method for the same
12/29/2011	US20110316057 Wiring board, semiconductor device, and manufacturing methods thereof
12/29/2011	US20110316056 Semiconductor device and method of manufacturing the same
12/29/2011	US20110316055 Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate
12/29/2011	US20110316051 Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
12/29/2011	US20110316049 Nitride semiconductor device and method of manufacturing the same
12/29/2011	US20110316048 Semiconductor device and method for fabricating the same
12/29/2011	US20110316047 Semiconductor device and manufacturing method of the same
12/29/2011	US20110316046 Field Effect Transistor Device
12/29/2011	US20110316045 LAYOUT DESIGN FOR A HIGH POWER, GaN-BASED FET
12/29/2011	US20110316044 Delta monolayer dopants epitaxy for embedded source/drain silicide
12/29/2011	US20110316043 Thin Group IV Semiconductor Structures
12/29/2011	US20110316042 Thyristor random access memory device and method
12/29/2011	US20110316021 Epitaxial growth method and devices
12/29/2011	US20110316003 Multilayered Semiconductor Wafer and Process For Manufacturing The Same
12/29/2011	US20110316002 Cmos image sensor
12/29/2011	US20110316001 Method for growing group iii-v nitride film and structure thereof
12/29/2011	US20110316000 Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
12/29/2011	US20110315998 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer
12/29/2011	US20110315997 GaN Substrate and Method of Its Manufacture, Method of Manufacturing GaN Layer-Bonded Substrate, and Method of Manufacturing Semiconductor Device
12/29/2011	US20110315996 Semiconductor device, light emitting device and method of manufacturing same
12/29/2011	US20110315995 Semiconductor device and method for manufacturing same
12/29/2011	US20110315994 Display device and method of manufacturing the same
12/29/2011	US20110315992 Plasma-enhanced chemical vapor deposition of crystalline germanium
12/29/2011	US20110315990 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance
12/29/2011	US20110315988 Passivated upstanding nanostructures and methods of making the same
12/29/2011	US20110315985 Sensor-fitted substrate and method for producing sensor-fitted substrate
12/29/2011	US20110315983 Thin film transistor having semiconductor active layer
12/29/2011	US20110315982 Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use
12/29/2011	US20110315980 Thin Film Transistor and Method of Manufacturing the Same
12/29/2011	US20110315979 Transistor and semiconductor device
12/29/2011	US20110315962 Nanosensors
12/29/2011	US20110315961 Ultrathin Spacer Formation for Carbon-Based FET
12/29/2011	US20110315960 Tunnel field effect transistor and method of manufacturing same
12/29/2011	US20110315959 Electronic and optoelectronic devices with quantum dot films
12/29/2011	US20110315953 Method of forming compound semiconductor
12/29/2011	US20110315951 Method for forming a catalyst suitable for growth of carbon nanotubes
12/29/2011	US20110315950 Nanowire fet with trapezoid gate structure
12/29/2011	US20110315880 Teramos-terahertz thermal sensor and focal plane array
12/29/2011	US20110315218 Conductive compositions and processes for use in the manufacture of semiconductor devices
12/29/2011	DE112008000636B4 Verfahren zum Bilden von verbesserten EPI-Füllungen auf schmalen durch Isolierung begrenzten Source/Drain-Regionen und dadurch gebildete Strukturen A method of forming improved EPI fillings on narrow limited by isolating the source / drain regions and structures formed thereby
12/29/2011	DE102011106041A1 Abgeschirmter Pegelverschiebungstransistor Fenced level shift transistor
12/29/2011	DE102011078204A1 Temperaturregelanordnung und temperaturregelverfahren für einenleistungsschalter Temperature control arrangement and temperature regulation method for switches
12/29/2011	DE102011077841A1 Leistungshalbleitervorrichtung Power semiconductor device
12/29/2011	DE102011075367A1 Leistungshalbleitervorrichtung Power semiconductor device
12/29/2011	DE102009055395B4 Vordotiertes Halbleitermaterial für eine Metallgateelektrodenstruktur mit großem ε von p-und n-Kanaltransistoren Predoped semiconductor material for a metal gate electrode structure with large ε of p-and n-channel transistors
12/29/2011	DE102007024112B4 Halbleitervorrichtung mit isoliertem Gate A semiconductor device comprising insulated gate
12/29/2011	DE102006050338B4 Halbleiterbauelement mit verbessertem Speicherladung zu Dioden-Softness Trade-off Semiconductor device with improved storage charge to diode Softness trade-off
12/29/2011	DE102006021959B4 Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung Power semiconductor device and process for its preparation
12/29/2011	CA2802500A1 Substrate with buffer layer for oriented nanowire growth
12/29/2011	CA2778185A1 Method and device for manufacturing silicon carbide substrate
12/28/2011	EP2400553A2 Layout design for a high power, gan-based fet
12/28/2011	EP2400552A1 Mos transistor structure with easy access to all nodes
12/28/2011	EP2400543A2 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
12/28/2011	EP2400533A2 Diamond field effect transistor and process for producing the same
12/28/2011	EP2400532A2 Diamond semiconductor element and process for producing the same
12/28/2011	EP2400531A2 Diamond semiconductor element and process for producing the same
12/28/2011	EP2400530A2 Diamond semiconductor element and process for producing the same
12/28/2011	EP2400529A2 "method of manufacturing vertical pin diodes"
12/28/2011	EP2400498A1 Methods for operating a semiconductor device
12/28/2011	EP2399293A1 Low-noise parallel cascade of optical receivers
12/28/2011	EP2399283A2 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
12/28/2011	EP1771885B1 Semiconductor device and method of manufacturing the same
12/28/2011	EP1661176B1 Implantation method for a vertical transistor
12/28/2011	EP1583154B1 P-type nitride semiconductor structure and bipolar transistor
12/28/2011	EP1325522B1 Silicon carbide power mosfets having a shorting channel and methods of fabricating them
12/28/2011	CN202094128U Surface-contact diode
12/28/2011	CN202094127U Novel diode with triangular crystal grain
12/28/2011	CN202094126U 高电压高频快速开关的大功率晶体管 High voltage and high frequency fast switching power transistors
12/28/2011	CN202094124U Ac-dc开关电源及其功率三极管 Ac-dc switching power supply and power transistor
12/28/2011	CN202093290U 一种液晶显示器的阵列基板、及液晶显示器 An array substrate of a liquid crystal display, and a liquid crystal display
12/28/2011	CN1868046B 半导体器件及制造此类半导体器件的方法 Semiconductor device and method of manufacturing such a semiconductor device
12/28/2011	CN1828944B 非易失性存储单元及具有非易失性存储单元的存储器阵列 The nonvolatile memory cell and a memory array having a non-volatile memory cell
12/28/2011	CN102301484A 非对称结型场效应晶体管及其制造方法 Asymmetric junction field effect transistor and manufacturing method thereof
12/28/2011	CN102301483A 高速度低功率消耗的隔离模拟互补金属氧化物半导体单元 Isolated analog high-speed low-power consumption of complementary metal oxide semiconductor unit
12/28/2011	CN102301482A 用于悬浮和细化纳米线的无掩模制程 Maskless process for suspension and refine nanowires

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