H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2011
12/15/2011	US20110303992 Semiconductor device and method of manufacture thereof
12/15/2011	US20110303991 Transistor performance improving method with metal gate
12/15/2011	US20110303990 Semiconductor Device and Method Making Same
12/15/2011	US20110303988 Semiconductor device and level shift circuit using the same
12/15/2011	US20110303985 Semiconductor device and fabrication method therefor
12/15/2011	US20110303979 Semiconductor device
12/15/2011	US20110303978 Semiconductor Device Having an Enhanced Well Region
12/15/2011	US20110303977 Ldpmos structure for enhancing breakdown voltage and specific on resistance in bicmos-dmos process
12/15/2011	US20110303976 High voltage channel diode
12/15/2011	US20110303975 Field effect transistor with self-aligned source and heavy body regions
12/15/2011	US20110303974 Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same
12/15/2011	US20110303973 Semiconductor device and production method
12/15/2011	US20110303972 Semiconductor device and method for manufacturing the same
12/15/2011	US20110303971 Three-dimensional semiconductor memory device and method for manufacturing the same
12/15/2011	US20110303970 Vertical semiconductor devices
12/15/2011	US20110303969 Semiconductor memory device and method of manufacturing the same
12/15/2011	US20110303968 Nonvolatile Memory Array With Continuous Charge Storage Dielectric Stack
12/15/2011	US20110303967 Non-Volatile Memory With Air Gaps
12/15/2011	US20110303966 Nonvolatile semiconductor memory transistor, nonvolatile semiconductor memory, and method for manufacturing nonvolatile semiconductor memory
12/15/2011	US20110303965 Semiconductor devices
12/15/2011	US20110303964 Nonvolatile memory, method for manufacturing same, and display device
12/15/2011	US20110303963 Semiconductor devices
12/15/2011	US20110303962 Non-volatile memory devices with non-uniform floating gate coupling
12/15/2011	US20110303961 Nonvolatile memory device and method of manufacturing same
12/15/2011	US20110303960 Low resistivity tungsten pvd with enhanced ionization and rf power coupling
12/15/2011	US20110303959 Ultraviolet Energy Shield for Non-Volatile Charge Storage Memory
12/15/2011	US20110303958 Nonvolatile semiconductor memory
12/15/2011	US20110303955 Junction Field Effect Transistor Having A Double Gate Structure And Method of Making Same
12/15/2011	US20110303954 Semiconductor devices having stressor regions and related fabrication methods
12/15/2011	US20110303952 High Electron Mobility Transistors And Methods Of Fabricating The Same
12/15/2011	US20110303951 Semiconductor device and method of fabricating the same
12/15/2011	US20110303950 Fabrication of a vertical heterojunction tunnel-fet
12/15/2011	US20110303925 Semiconductor device and the method of manufacturing the same
12/15/2011	US20110303923 Tft, array substrate for display apparatus including tft, and methods of manufacturing tft and array substrate
12/15/2011	US20110303922 Display device and method for manufacturing the same
12/15/2011	US20110303919 Display device and electronic device having the display device, and method for manufacturing thereof
12/15/2011	US20110303916 Semiconductor device
12/15/2011	US20110303914 Semiconductor Device
12/15/2011	US20110303913 Semiconductor device and method for manufacturing the same
12/15/2011	US20110303912 Methods Of Manufacturing P-Type Zn Oxide Nanowires And Electronic Devices Including P-Type Zn Oxide Nanowires
12/15/2011	US20110303899 Graphene deposition
12/15/2011	US20110303291 Formation of thin layers of semiconductor materials
12/15/2011	DE102011076272A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
12/15/2011	DE102011005194A1 Steuerung der Rekombinationsrate in einem bipolaren Halbleiterbauelement Control of recombination in a bipolar semiconductor device
12/15/2011	DE102007003583B4 Verfahren zum Herstellen eines Transistors A method of manufacturing a transistor
12/15/2011	DE102005063131B4 Halbleiterbauelement und Verfahren zum Reduzieren von Leckströmen, die durch eine Fehljustierung einer Kontaktstruktur hervorgerufen werden, durch Erhöhen einer Fehlertoleranz des Kontaktstrukturierungsprozesses A semiconductor device and method for reducing leakage currents, which are caused by a misalignment of a contact structure, by increasing an error tolerance of the contact patterning process
12/14/2011	EP2395620A1 Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
12/14/2011	EP2395551A1 Thin film transistor substrate, method of fabricating the same and flat display having the same
12/14/2011	EP2394304A1 Maskless process for suspending and thinning nanowires
12/14/2011	EP2394303A2 Iii-nitride devices and circuits
12/14/2011	EP2394298A1 Ic and ic manufacturing method
12/14/2011	EP2394169A1 Encapsulated nanoparticles
12/14/2011	EP2015363B1 Semiconductor device
12/14/2011	EP1868000B1 Acceleration sensor
12/14/2011	EP1393362B1 Method of manufacturing a trench-gate semiconductor device
12/14/2011	EP1232520B1 Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
12/14/2011	CN202076272U 一种用于脉冲功率电源的薄型晶闸管 Thin thyristor for pulsed power supply
12/14/2011	CN202076271U 背封单晶硅外延层结构 Back closure monocrystalline silicon epitaxial layer structure
12/14/2011	CN202076269U 一种绝缘体上硅可集成大电流n型组合半导体器件 An insulator that can be integrated on a silicon n-type high-current portfolio of semiconductor devices
12/14/2011	CN202076260U Sheet type diode
12/14/2011	CN1988116B 制造场效应晶体管的方法以及由此制造的晶体管结构 The method of producing a field effect transistor, and a transistor structure fabricated therefrom
12/14/2011	CN1941410B 生产高密度半导体功率器件的钴-硅接触绝缘金属工艺 Production of high-density semiconductor power devices cobalt - silicon contact insulated metal craft
12/14/2011	CN1910600B Id标记、id卡和id标签 Id tag, id cards and id tag
12/14/2011	CN1868068B 完全耗尽型绝缘衬底硅cmos逻辑 Fully depleted silicon insulating substrate cmos logic
12/14/2011	CN1868002B 具有多个控件的基于纳米管的开关元件及由其制成的电路 Based on circuit switching element and nanotubes made therefrom have multiple controls
12/14/2011	CN1849260B 金属纳米粒子及其制造方法、金属纳米粒子分散液及其制造方法、以及金属细线和金属薄膜及其制造方法 A method of manufacturing the metal nanoparticles, metal nanoparticles dispersion liquid and manufacturing method thereof, and a metal thin film and its manufacturing method and metal
12/14/2011	CN1770474B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/14/2011	CN102282651A 具有非平面浮动栅极的存储器晶体管及其制造方法 Memory transistor and its manufacturing method having a floating gate of a non-planar
12/14/2011	CN102282650A 太阳能电池方法及结构 The method and the solar cell structure
12/14/2011	CN102282646A 量子点超级电容器和电子电池 Quantum dots super capacitors and electronic battery
12/14/2011	CN102280817A 氮化物半导体器件及其制造方法 The nitride semiconductor device and manufacturing method thereof
12/14/2011	CN102280497A 累积型场效应管可变电容及其制造工艺 Cumulative FET variable capacitor and its manufacturing process
12/14/2011	CN102280496A 变容器与形成其的方法以及应用此变容器的三维集成电路 3D IC varactor and its method of formation and the application of this varactor
12/14/2011	CN102280495A 一种齐纳二极管及其制造方法 One kind of zener diode and its manufacturing method
12/14/2011	CN102280494A 常关型场控沟道GaN异质结二极管 Field control channel normally-off GaN heterostructure diode
12/14/2011	CN102280493A 半导体装置 Semiconductor device
12/14/2011	CN102280492A 非易失性半导体存储器晶体管、非易失性半导体存储器及非易失性半导体存储器的制造方法 The method of manufacturing a nonvolatile semiconductor memory transistor, a nonvolatile semiconductor memory and the nonvolatile semiconductor memory
12/14/2011	CN102280491A 混合式薄膜晶体管及其制造方法以及显示面板 Hybrid thin film transistor and manufacturing method thereof and a display panel
12/14/2011	CN102280490A 开关组件 Switch assembly
12/14/2011	CN102280489A 具有偏移结构的薄膜晶体管 A thin film transistor having an offset structure
12/14/2011	CN102280488A Tft、包括tft的阵列基板及制造tft和阵列基板的方法 Tft, includes an array substrate and a method of manufacturing an array substrate and tft tft of
12/14/2011	CN102280487A 一种新型沟槽结构的功率mosfet器件及其制造方法 A power mosfet device and a manufacturing method of a new type trench structure
12/14/2011	CN102280486A 半导体器件及其制作方法 Semiconductor device and manufacturing method thereof
12/14/2011	CN102280485A 一种小体积高耐压mosfet A small-volume high voltage mosfet
12/14/2011	CN102280484A 一种栅源和栅漏过压保护的晶体管功率器件及其制造方法 One kind of gate-source and gate-drain transistor power overvoltage protection device and manufacturing method
12/14/2011	CN102280483A 一种栅源侧台保护的功率器件及其制造方法 One kind of the gate power source side protection station device and a manufacturing method
12/14/2011	CN102280482A 射频侧向扩散金属氧化物半导体器件及制备方法 RF laterally diffused metal oxide semiconductor device and method of preparation
12/14/2011	CN102280481A 横向双扩散金属氧化物半导体器件及其制造方法 Lateral double diffused metal oxide semiconductor device and manufacturing method thereof
12/14/2011	CN102280480A 双栅沟道导电类型可调单壁碳纳米管场效应晶体管及制备工艺 Adjustable dual-gate channel conductivity type field effect transistor single-walled carbon nanotubes and preparation
12/14/2011	CN102280479A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/14/2011	CN102280478A 可堆栈式功率mosfet、功率mosfet堆栈及其制备工艺 Stackable power mosfet, power mosfet stack and its preparation process
12/14/2011	CN102280477A 一种半导体装置 A semiconductor device comprising
12/14/2011	CN102280476A 一种赝配高电子迁移率晶体管及其制作方法 One kind pseudomorphic high electron mobility transistor and its manufacturing method
12/14/2011	CN102280475A 绝缘栅双极晶体管 Insulated gate bipolar transistor
12/14/2011	CN102280474A 一种igbt器件及其制造方法 One kind of device and manufacturing method thereof igbt
12/14/2011	CN102280473A 半导体器件和制造半导体器件的方法 The method of manufacturing a semiconductor device and a semiconductor device
12/14/2011	CN102280472A 一种高维持电压n型静电防护半导体器件 Maintain a high-voltage n-type semiconductor ESD protection devices
12/14/2011	CN102280471A 一种高维持电压p型静电防护半导体器件 Maintain a high-voltage p-type semiconductor ESD protection devices
12/14/2011	CN102280470A 半导体器件和半导体器件制造方法 Semiconductor device and a semiconductor device manufacturing method
12/14/2011	CN102280469A 硅表面上ⅲ-v化合物半导体的外延生长 Epitaxial growth on a silicon surface ⅲ-v compound semiconductor

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