H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2011
11/03/2011	US20110269278 Stress Memorization with Reduced Fringing Capacitance Based on Silicon Nitride in MOS Semiconductor Devices
11/03/2011	US20110269258 Solid-state imaging device and method for manufacturing the same
11/03/2011	US20110269240 Immobilizing chemical or biological sensing molecules on semi-conducting nanowires
11/03/2011	US20110267915 Anti-fuse, anti-fuse circuit including the same, and method of fabricating the anti-fuse
11/03/2011	US20110267867 Semiconductor device
11/03/2011	US20110267473 Infrared sensing element and infrared imaging device
11/03/2011	US20110266682 Microelectronic structure including air gap
11/03/2011	US20110266659 Technique for stable processing of thin/fragile substrates
11/03/2011	US20110266655 Semiconductor wafer having multilayer film, method for producing the same, and method for producing semiconductor device
11/03/2011	US20110266654 Power storage device and method for manufacturing the same
11/03/2011	US20110266652 Semiconductor Package with Penetrable Encapsulant Joining Semiconductor Die and Method Thereof
11/03/2011	US20110266650 Semiconductor device and method for manufacturing same
11/03/2011	US20110266649 Semiconductor device
11/03/2011	US20110266647 Methods of Forming Isolated Active Areas, Trenches, and Conductive Lines in Semiconductor Structures and Semiconductor Structures Including the Same
11/03/2011	US20110266642 Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained
11/03/2011	US20110266641 Silicon condenser microphone having an additional back chamber and a fabrication method therefor
11/03/2011	US20110266640 Acoustic sensor and method of manufacturing the same
11/03/2011	US20110266639 Method of Producing a MEMS Device
11/03/2011	US20110266638 Semiconductor Device Comprising Contact Elements and Metal Silicide Regions Formed in a Common Process Sequence
11/03/2011	US20110266636 Method for forming an offset spacer of a mos device
11/03/2011	US20110266635 Native Devices Having Improved Device Characteristics and Methods for Fabrication
11/03/2011	US20110266634 Semiconductor device and method of fabricating the same
11/03/2011	US20110266628 Poly profile engineering to modulate spacer induced stress for device enhancement
11/03/2011	US20110266625 Maintaining Integrity of a High-K Gate Stack After Embedding a Stressor Material by Using a Liner
11/03/2011	US20110266622 Semiconductor device with stressed fin sections
11/03/2011	US20110266621 Field effect transistor
11/03/2011	US20110266620 Transistor structure with feed-through source-to-substrate contact
11/03/2011	US20110266619 Semiconductor transistor comprising two electrically conductive shield elements
11/03/2011	US20110266617 Semiconductor device and manufacturing method thereof
11/03/2011	US20110266616 Trenched power semiconductor structure with reduced gate impedance and fabrication method thereof
11/03/2011	US20110266615 Semiconductor device
11/03/2011	US20110266614 Ldmos with enhanced safe operating area (soa) and method therefor
11/03/2011	US20110266612 Nand-type nonvolatile semiconductor memory device
11/03/2011	US20110266611 Nonvolatile memory device and method for fabricating the same
11/03/2011	US20110266610 Memory devices having reduced interference between floating gates and methods of fabricating such devices
11/03/2011	US20110266609 SiH4 SOAK FOR LOW HYDROGEN SIN DEPOSITION TO IMPROVE FLASH MEMORY DEVICE PERFORMANCE
11/03/2011	US20110266608 Nonvolatile memory devices having gate structures doped by nitrogen
11/03/2011	US20110266606 Method of manufacturing nonvolatile memory device and nonvolatile memory device manufactured by the method
11/03/2011	US20110266605 Memristive Transistor Memory
11/03/2011	US20110266604 Nonvolatile memory device and method for fabricating the same
11/03/2011	US20110266603 Semiconductor device
11/03/2011	US20110266601 Single Gate Semiconductor Device
11/03/2011	US20110266600 Semiconductor memory device and manufacturing method thereof
11/03/2011	US20110266597 Semiconductor device and method for manufacturing the same
11/03/2011	US20110266596 Semiconductor device and method of making the same
11/03/2011	US20110266595 Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
11/03/2011	US20110266594 Method for obtaining a layer of aln having substantially vertical sides
11/03/2011	US20110266593 Semiconductor devices with gate-source esd diode and gate-drain clamp diode
11/03/2011	US20110266592 Device and method for transient voltage suppressor
11/03/2011	US20110266591 Bi-directional diode structure
11/03/2011	US20110266575 Nitride-based semiconductor device and method for fabricating the same
11/03/2011	US20110266558 Silicon carbide semiconductor device and method of producing silicon carbide semiconductor device
11/03/2011	US20110266557 Semiconductor Devices Having Improved Adhesion and Methods of Fabricating the Same
11/03/2011	US20110266556 Method for controlled growth of silicon carbide and structures produced by same
11/03/2011	US20110266554 Semiconductor device and method of manufacturing the device
11/03/2011	US20110266550 Method of forming of a semiconductor film, method of manufacture of a semiconductor device and a semiconductor device
11/03/2011	US20110266549 Laminated structure, production method of the same, multilayer circuit board, active matrix substrate, and electronic display
11/03/2011	US20110266547 Thin film transistor array panel and display device
11/03/2011	US20110266546 Display device and manufacturing method thereof
11/03/2011	US20110266543 Circuit board and display device
11/03/2011	US20110266542 Semiconductor device and method of fabricating the same
11/03/2011	US20110266538 Semiconductor device and manufacturing method thereof
11/03/2011	US20110266537 Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
11/03/2011	US20110266536 Solution Composition for Manufacturing Metal Oxide Semiconductor
11/03/2011	US20110266522 Semiconductor device
11/03/2011	US20110266521 Porous and non-porous nanostructures
11/03/2011	US20110266517 Peptide nanostructures encapsulating a foreign material and method of manufacturing same
11/03/2011	US20110265574 System on a Chip Using Integrated MEMS and CMOS Devices
11/03/2011	DE102010028466A1 Bewahren der Integrität eines Gatestapels mit großem ε nach Einbettung in ein Verspannungsmaterial unter Anwendung einer Beschichtung Preserving the integrity of a gate stack with large ε after embedding in a bracing material using a coating
11/03/2011	DE102010028463A1 Halbleiterbauelement mit komplexen leitenden Elementen in einem dielektrischen Materialsystem, das unter Anwendung einer Barrierenschicht hergestellt ist A semiconductor device with conductive elements in a complex dielectric material system which is fabricated using a barrier layer
11/03/2011	DE102010028462A1 Verspannungsgedächtnistechnik mit geringerer Randzonenkapazität auf der Grundlage von Siliziumnitrid in MOS-Halbleiterbauelementen Stress memorization technique with lower marginal zone capacity on the basis of silicon MOS semiconductor devices
11/03/2011	DE102010028458A1 Halbleiterbauelement mit Kontaktelementen und Metallsilizidgebieten, die in einer gemeinsamen Prozesssequenz hergestellt sind Semiconductor component with contact elements and metal silicide, which are manufactured in a common process sequence
11/03/2011	DE102009051317B4 Verfahren zur Herstellung eines Halbleiterbauelement A method for producing a semiconductor device
11/03/2011	DE10124822B4 Sensorvorrichtung und Sensorgerät Sensor device and sensor device
11/02/2011	EP2383790A1 Semiconductor device with a drain region underlying a gate contact pad
11/02/2011	EP2383789A1 Semiconductor device having a conductive field plate layer
11/02/2011	EP2383788A1 Semiconductor device with a main base region
11/02/2011	EP2383787A1 Silicon carbide power MOS field effect transistors
11/02/2011	EP2383786A1 Semiconductor transistor comprising two electrically conductive shield elements
11/02/2011	EP2383785A2 A nanoscale electronic device
11/02/2011	EP2383784A1 Method for manufacturing silicon carbide semiconductor element
11/02/2011	EP2383781A1 MOS capacitor structure with linear capacitance-voltage curve
11/02/2011	EP2383778A2 Semiconductor device, and method for manufacturing the same
11/02/2011	EP2383772A1 Method for producing silicon carbide semiconductor device
11/02/2011	EP2383273A1 Aromatic compound and method for producing same
11/02/2011	EP2382667A2 Tunnel field effect transistor and method of manufacturing same
11/02/2011	EP2382666A1 Reflector channel
11/02/2011	EP2382652A2 Quantum well mosfet channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
11/02/2011	EP2062291B1 Method of manufacturing a bipolar transistor
11/02/2011	EP1909329B1 Semiconductor device
11/02/2011	EP1890336B1 High-voltage MOS transistor device and method of making the same
11/02/2011	EP1883971B1 Cathode cell design
11/02/2011	EP1775782B1 Functional molecular device
11/02/2011	EP1412976B1 Boron-doped titanium nitride layer for high aspect ratio semiconductor devices
11/02/2011	EP1203410B1 Product with semiconductor comprising a schottky contact
11/02/2011	CN202025764U Semiconductor thin film transistor
11/02/2011	CN202025763U Power MOS field effect transistor suitable for automotive electronics
11/02/2011	CN202025762U High-speed thyristor with segmented width-changing involute multi-fingered amplifying gate structure
11/02/2011	CN202025761U Crimping type controlled silicon chip structure
11/02/2011	CN202025760U Thyristor structure with improved reliability

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