H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2011
11/17/2011	US20110278675 IGFET Device Having an RF Capability
11/17/2011	US20110278673 Methodology for fabricating isotropically recessed source and drain regions of cmos transistors
11/17/2011	US20110278672 Methodology for fabricating isotropically recessed drain regions of cmos transistors
11/17/2011	US20110278671 Laterally diffused metal-oxide-semiconductor device
11/17/2011	US20110278670 Apparatus, System, and Method for Tunneling Mosfets Using Self-Aligned Heterostructure Source and Isolated Drain
11/17/2011	US20110278669 Semiconductor device
11/17/2011	US20110278668 Semiconductor Devices Having Bit Line Interconnections with Increased Width and Reduced Distance from Corresponding Bit Line Contacts and Methods of Fabricating Such Devices
11/17/2011	US20110278667 Semiconductor component arrangement and method for producing thereof
11/17/2011	US20110278665 High-mobility trench mosfets
11/17/2011	US20110278664 Semiconductor device
11/17/2011	US20110278663 Semiconductor device
11/17/2011	US20110278662 Semiconductor device including recessed channel transistor and method of manufacturing the same
11/17/2011	US20110278661 Apparatus including rhodium-based charge traps
11/17/2011	US20110278660 Oro and orpro with bit line trench to suppress transport program disturb
11/17/2011	US20110278659 Semiconductor device and method of manufacturing the same
11/17/2011	US20110278658 Non-volatile semiconductor memory device and method of manufacturing the same
11/17/2011	US20110278657 Apparatus, system, and method for capacitance change non-volatile memory device
11/17/2011	US20110278654 Semiconductor device
11/17/2011	US20110278651 Nmos transistor devices and methods for fabricating same
11/17/2011	US20110278650 Power semiconductor device
11/17/2011	US20110278648 method of introducing a structure in a substrate
11/17/2011	US20110278647 Iii-nitride semiconductor electronic device, and method of fabricating iii-nitride semiconductor electronic device
11/17/2011	US20110278645 Strain-direct-on-insulator (sdoi) substrate and method of forming
11/17/2011	US20110278644 Group iii-nitride enhancement mode field effect devices and fabrication methods
11/17/2011	US20110278643 Semiconductor unit and semiconductor apparatus using same
11/17/2011	US20110278642 Power semiconductor structure with field effect rectifier and fabrication method thereof
11/17/2011	US20110278599 Silicon carbide semiconductor device
11/17/2011	US20110278598 Semiconductor structure, an integrated circuit including a semiconductor structure and a method for manufacturing a semiconductor structure
11/17/2011	US20110278596 Epitaxial silicon carbide monocrystalline substrate and method of production of same
11/17/2011	US20110278595 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
11/17/2011	US20110278594 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
11/17/2011	US20110278593 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
11/17/2011	US20110278592 Semiconductor device
11/17/2011	US20110278591 Power semiconductor switch
11/17/2011	US20110278590 Semiconductor Devices Having Gates Including Oxidized Nickel and Related Methods of Fabricating the Same
11/17/2011	US20110278589 Gallium Nitride Semiconductor Device With Improved Forward Conduction
11/17/2011	US20110278588 Method of Preparing and Storing GaN Substrate, Prepared and Stored GaN Substrate, and Semiconductor Device and Method of Its Manufacture
11/17/2011	US20110278586 Bipolar transistor
11/17/2011	US20110278585 Growth of reduced dislocation density non-polar gallium nitride
11/17/2011	US20110278584 Liquid Crystal Display Panel
11/17/2011	US20110278583 Thin-film semiconductor device for display apparatus and manufacturing method thereof
11/17/2011	US20110278582 Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
11/17/2011	US20110278581 Semiconductor device and manufacturing method thereof
11/17/2011	US20110278580 Methodology for fabricating isotropically source regions of cmos transistors
11/17/2011	US20110278578 Display device
11/17/2011	US20110278577 Light-emitting device
11/17/2011	US20110278573 Semiconductor device and method for manufacturing the same
11/17/2011	US20110278572 Electro-Optical Device
11/17/2011	US20110278571 Semiconductor device
11/17/2011	US20110278570 Scaling of bipolar transistors
11/17/2011	US20110278568 Manufacturing process of integrated electronic circuits and circuits thereby obtained
11/17/2011	US20110278567 Thin film transistors using thin film semiconductor materials
11/17/2011	US20110278566 Method of patterning thin film solution-deposited
11/17/2011	US20110278565 Oxide thin film transistor and method of fabricating the same
11/17/2011	US20110278564 Semiconductor device
11/17/2011	US20110278563 Thin film transistor array substrate and method for manufacturing the same
11/17/2011	US20110278546 Nanowire Tunnel Field Effect Transistors
11/17/2011	US20110278545 Manufacture of Graphene-Based Apparatus
11/17/2011	US20110278544 Generation of multiple diameter nanowire field effect transistors
11/17/2011	US20110278543 Generation of mutiple diameter nanowire field effect transistors
11/17/2011	US20110278542 TFET with Nanowire Source
11/17/2011	US20110278540 Field-effect transistor
11/17/2011	US20110278539 Generation of multiple diameter nanowire field effect transistors
11/17/2011	US20110278537 Semiconductor epitaxial structures and semiconductor optoelectronic devices comprising the same
11/17/2011	US20110278535 Incorporation of Functionalizing Molecules in Nano-Patterned Epitaxial Graphene Electronics
11/17/2011	US20110278533 Double gyroid structure nanoporous films and nanowire networks
11/17/2011	US20110278527 Semiconductor device
11/17/2011	DE10321482B4 Verbesserung von Membraneigenschaften einer Halbleiteranordnung Improvement of membrane properties of a semiconductor device
11/17/2011	DE102011101457A1 Verfahren zur Herstellung einer Halbleiteranordnung A process for producing a semiconductor device
11/17/2011	DE102011002233A1 GaN based power devices with integrated protection devices: structures and methods GaN based power devices with integrated protection devices: structures and methods
11/17/2011	DE102010064411A1 Verfahren zur Herstellung einer dielektrisch isolierten Halbleitervorrichtung A method of manufacturing a dielectrically isolated semiconductor device
11/17/2011	DE102007003812B4 Halbleiterbauelement mit Trench-Gate und Verfahren zur Herstellung A semiconductor device having trench gate and processes for preparing
11/17/2011	DE102007002744B4 Halbleiterbauelement Semiconductor device
11/17/2011	DE10196527B3 Verfahren zum Herstellen einer dicken Oxidschicht auf dem Boden einer Grabenstruktur in Silicium A method for producing a thick oxide layer on the bottom of a grave structure in silicon
11/17/2011	CA2778307A1 Semiconductor device, combined substrate, and methods for manufacturing them
11/17/2011	CA2768285A1 Silicon carbide substrate fabrication method, semiconductor device fabrication method, silicon carbide substrate, and semiconductor device
11/16/2011	EP2387077A2 Semiconductor device with a peripheral base region
11/16/2011	EP2387066A2 Method of forming a single-electron memory device using a sub-micron mask
11/16/2011	EP2332168B1 Dislocation engineering using a scanned laser
11/16/2011	EP1932171B1 Finfet-based non-volatile memory device
11/16/2011	EP1290735B1 Semiconductor device
11/16/2011	EP0958609B1 A FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SiC AND A METHOD FOR PRODUCTION THEREOF
11/16/2011	CN202042487U Semiconductor device with super-junction structure
11/16/2011	CN202042486U High-temperature resistant high-power thyristor
11/16/2011	CN1973377B High frequency transistor layout for low source drain capacitance
11/16/2011	CN1947262B LDMOS transistor and manufacture method thereof
11/16/2011	CN1943034B Tuneable semiconductor device
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11/16/2011	CN102246508A Solid-state imaging device
11/16/2011	CN102246327A Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
11/16/2011	CN102246312A Jfet device structures and methods for fabricating the same
11/16/2011	CN102246311A Cu alloy film and display device
11/16/2011	CN102246310A Thin film transistor and display device
11/16/2011	CN102246309A Trench-based power semiconductor devices with increased breakdown voltage characteristics
11/16/2011	CN102246308A Trench-based power semiconductor devices with increased breakdown voltage characteristics
11/16/2011	CN102246307A Trench-based power semiconductor devices with increased breakdown voltage characteristics
11/16/2011	CN102246306A Trench-based power semiconductor devices with increased breakdown voltage characteristics
11/16/2011	CN102246305A An improved RF CMOS transistor design
11/16/2011	CN102246294A Low power memory device with JFET device structures

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