H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2011
11/24/2011	WO2011143836A1 Method for manufacturing trench with thick insulating bottom and semiconductor device thereof
11/24/2011	WO2011126609A3 Semiconductor device and method
11/24/2011	WO2011068737A3 Planar mosfet with textured channel and gate
11/24/2011	WO2011068711A3 High mobility monolithic p-i-n diodes
11/24/2011	WO2011039193A3 Trigger stage thyristor having decoupled trigger stage
11/24/2011	US20110287615 High-density nonvolatile memory and methods of making the same
11/24/2011	US20110287597 Nonvolatile semicondutor memory device and manufacturing method thereof
11/24/2011	US20110286135 Silicon Controlled Rectifier Based Electrostatic Discharge Protection Circuit With Integrated JFETS, Method Of Operation And Design Structure
11/24/2011	US20110285427 Semiconductor device
11/24/2011	US20110285019 Transparent conductors comprising metal nanowires
11/24/2011	US20110285018 Multiple selectable function integrated circuit module
11/24/2011	US20110284995 Micromechanical membranes and related structures and methods
11/24/2011	US20110284993 Composite growth substrate for growing simiconductor device
11/24/2011	US20110284992 3d integrated circuit and method of manufacturing the same
11/24/2011	US20110284991 Semiconductor device and method of manufacturing semiconductor device
11/24/2011	US20110284990 Process for making an alignment structure in the fabrication of a semiconductor device
11/24/2011	US20110284987 Semiconductor device
11/24/2011	US20110284986 Bypass diode for a solar cell
11/24/2011	US20110284985 Shallow trench isolation extension
11/24/2011	US20110284977 Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
11/24/2011	US20110284976 Solid-state image pickup apparatus, method for manufacturing same, and electronic device
11/24/2011	US20110284975 Microstructure, method for producing the same, device for bonding a microstructure and microsystem
11/24/2011	US20110284974 Semiconductor device
11/24/2011	US20110284973 Semiconductor element and semiconductor device
11/24/2011	US20110284970 Transistor Device and Methods of Manufacture Thereof
11/24/2011	US20110284969 Semiconductor device, method of forming semiconductor device, and data processing system
11/24/2011	US20110284968 Semiconductor devices including gate structure and method of fabricating the same
11/24/2011	US20110284965 Reducing external resistance of a multi-gate device using spacer processing techniques
11/24/2011	US20110284964 Semiconductor device
11/24/2011	US20110284963 Semiconductor device
11/24/2011	US20110284961 Self-aligned schottky diode
11/24/2011	US20110284960 Non-planar thin fin transistor
11/24/2011	US20110284958 Semiconductor Component
11/24/2011	US20110284957 Semiconductor device and method for manufacturing the same
11/24/2011	US20110284956 Semiconductor device and production method thereof
11/24/2011	US20110284955 Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls
11/24/2011	US20110284953 Power trench mosfet rectifier
11/24/2011	US20110284952 Semiconductor device and manufacturing method thereof
11/24/2011	US20110284951 Semiconductor device and method of manufacturing the semiconductor device
11/24/2011	US20110284950 Method for fabricating a shallow and narrow trench FETand related structures
11/24/2011	US20110284949 Vertical transistor and a method of fabricating the same
11/24/2011	US20110284948 Semiconductor device and fabrication method for the same
11/24/2011	US20110284947 Nonvolatile semiconductor memory device and manufacturing method thereof
11/24/2011	US20110284946 Semiconductor memory and method for manufacturing same
11/24/2011	US20110284945 Semiconductor Device and a Method of Manufacturing the Same
11/24/2011	US20110284944 Non-volatile semiconductor memory device and method of manufacturing the same
11/24/2011	US20110284943 Semiconductor device and method of fabricating the same
11/24/2011	US20110284942 Semiconductor device with buried bit lines and method for fabricating the same
11/24/2011	US20110284938 Spin transistor and integrated circuit
11/24/2011	US20110284937 Spin transistor using n-type and p-type double carrier supply layer structure
11/24/2011	US20110284936 Semiconductor device and method of fabricating the same
11/24/2011	US20110284935 Semiconductor device and method for manufacturing the same
11/24/2011	US20110284934 Semiconductor device and method of fabricating the same
11/24/2011	US20110284933 Electric contacting of semiconductor components having low contact resistance
11/24/2011	US20110284932 Body contact structures and methods of manufacturing the same
11/24/2011	US20110284931 transistor device and manufacture method
11/24/2011	US20110284930 asymmetric silicon-on-insulator (soi) junction field effect transistor (jfet), a method of forming the asymmetrical soi jfet, and a design structure for the asymmetrical soi jfet
11/24/2011	US20110284928 Semiconductor device
11/24/2011	US20110284925 Electrostatic discharge (esd) silicon controlled rectifier (scr) structure
11/24/2011	US20110284924 Semiconductor device, semiconductor unit, and power semiconductor device
11/24/2011	US20110284923 Semiconductor device and manufacturing method of the same
11/24/2011	US20110284922 Devices with adjustable dual-polarity trigger-and holding-votage/current for high level of electrostatic discharge protection in sub-micron mixed signal cmos/bicmos integrated
11/24/2011	US20110284921 Hf-controlled bidirectional switch
11/24/2011	US20110284905 Nitride-based semiconductor device and method for fabricating the same
11/24/2011	US20110284876 Semiconductor device and method of manufacturing the same
11/24/2011	US20110284874 Semiconductor device and method for manufacturing the same
11/24/2011	US20110284873 Silicon carbide substrate
11/24/2011	US20110284872 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device
11/24/2011	US20110284871 Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
11/24/2011	US20110284870 Method for making a semiconductor structure with a buried ground plane
11/24/2011	US20110284869 High Voltage Durability III-Nitride HEMT
11/24/2011	US20110284868 High Voltage III-Nitride Transistor
11/24/2011	US20110284865 Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device
11/24/2011	US20110284863 Iii-v semiconductor structures and methods for forming the same
11/24/2011	US20110284862 III-nitride switching device with an emulated diode
11/24/2011	US20110284861 Low-temperature polysilicon thin film and method of manufacturing the same, transistor, and display apparatus
11/24/2011	US20110284860 Semiconductor device and method for producing the same
11/24/2011	US20110284859 Growth of group III nitride- based structures and integration with conventional CMOS processing tools
11/24/2011	US20110284858 Semiconductor device and method of manufacturing the same
11/24/2011	US20110284857 Thin film transistor array panel and manufacturing method thereof
11/24/2011	US20110284856 Semiconductor device
11/24/2011	US20110284854 Semiconductor device
11/24/2011	US20110284852 Thin-film transistor, array substrate having the same and method of manufacturing the same
11/24/2011	US20110284850 Amorphous-silicon thin film transistor and shift register having the same
11/24/2011	US20110284849 Crosslinked Hybrid Gate Dielectric Materials and Electronic Devices Incorporating Same
11/24/2011	US20110284848 Semiconductor device and manufacturing method thereof
11/24/2011	US20110284847 Semiconductor device
11/24/2011	US20110284846 Semiconductor device and method of manufacturing the same
11/24/2011	US20110284845 Semiconductor device
11/24/2011	US20110284844 Semiconductor device
11/24/2011	US20110284839 Semiconductor device and manufacturing method thereof
11/24/2011	US20110284838 Memory device and semiconductor device
11/24/2011	US20110284837 Semiconductor device
11/24/2011	US20110284836 Oxide semiconductor thin-film transistor
11/24/2011	US20110284820 Nanowires on substrate surfaces, method for producing same and use thereof
11/24/2011	US20110284818 Graphene Channel-Based Devices and Methods for Fabrication Thereof
11/24/2011	US20110284066 Dual sided processing and devices based on freestanding nitride and zinc oxide films
11/24/2011	DE102011007271A1 Feldeffekttransistor mit variablem Gate und elektrische und elektronische Vorrichtung, die diesen enthält Field effect transistor with the gate and the variable electric and electronic apparatus which includes this
11/24/2011	DE102010021344A1 Elektronisches Bauelement und seine Verwendung Electronic component and its use
11/24/2011	DE102010020884A1 Halbleiterbauelement Semiconductor device

1 ... 497 498 499 500 501 502 503 504 505 506 507 508 509 510 511 512 513 514 515 516 517 ... 2182