Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2011
12/27/2011US8084786 Silicided base structure for high frequency transistors
12/27/2011US8084785 III-nitride power semiconductor device having a programmable gate
12/27/2011US8084783 GaN-based device cascoded with an integrated FET/Schottky diode device
12/27/2011US8084782 Light-emitting film, light-emitting device and production method thereof
12/27/2011US8084773 Semiconductor-on-diamond devices and associated methods
12/27/2011US8084771 Bottom-gate thin film transistor and method of fabricating the same
12/27/2011US8084770 Test structures for development of metal-insulator-metal (MIM) devices
12/27/2011US8084768 Semiconductor device
12/27/2011US8084764 Semiconductor light emitting device and nitride semiconductor light emitting device
12/27/2011US8084763 Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
12/27/2011US8084762 Resistive memory
12/27/2011US8084761 Structure for phase change memory and the method of forming same
12/27/2011US8084760 Ring-shaped electrode and manufacturing method for same
12/27/2011US8084759 Integrated circuit including doped semiconductor line having conductive cladding
12/27/2011US8084338 Semiconductor device and manufacturing method thereof
12/27/2011US8084337 Growth of III-V compound semiconductor nanowires on silicon substrates
12/27/2011US8084332 Method of fabrication of AI/GE bonding in a wafer packaging environment and a product produced therefrom
12/27/2011US8084322 Method of manufacturing devices having vertical junction edge
12/27/2011US8084315 Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation
12/27/2011US8084142 Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
12/27/2011US8083971 Use of rylene derivatives as active components in solar cells and photodetectors
12/22/2011WO2011160041A2 High voltage transistor using diluted drain
12/22/2011WO2011159419A1 Bipolar transistor structure and method of forming the structure
12/22/2011WO2011158953A1 Leaving substituent-containing compound, organic semiconductor material formed therefrom, organic electronic device, organic thin-film transistor and display device using the organic semiconductor material, method for producing film-like product, pi-electron conjugated compound and method for producing the pi-electron conjugated compound
12/22/2011WO2011158951A1 Organic semiconductive material precursor containing dithienobenzodithiophene derivative, ink, insulating member, charge-transporting member, and organic electronic device
12/22/2011WO2011158929A1 Optical energy-crosslinkable insulating layer material for organic thin film transistor, overcoat insulating layer, and organic thin film transistor
12/22/2011WO2011158888A1 Field effect transistor
12/22/2011WO2011158780A1 Semiconductor device and method for manufacturing same
12/22/2011WO2011158707A1 Dynamic sensor
12/22/2011WO2011158704A1 Method for manufacturing semiconductor device
12/22/2011WO2011158703A1 Semiconductor device
12/22/2011WO2011158647A1 Semiconductor device and method for manufacturing same
12/22/2011WO2011158612A1 Device and method for forming low-temperature polysilicon film
12/22/2011WO2011158535A1 Method for producing composite substrate and composite substrate
12/22/2011WO2011158534A1 Silicon carbide semiconductor device manufacturing method
12/22/2011WO2011158533A1 Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device
12/22/2011WO2011158528A1 Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device
12/22/2011WO2011158429A1 Converter module and method for manufacturing same
12/22/2011WO2011158427A1 Active matrix substrate
12/22/2011WO2011158424A1 Thin film transistor substrate and liquid crystal display device
12/22/2011WO2011158400A1 Semiconductor device and method for manufacturing same
12/22/2011WO2011158319A1 Semiconductor device and method for manufacturing same
12/22/2011WO2011157814A2 Power semiconductor device
12/22/2011WO2011157571A1 Strained thin body cmos device having vertically raised source/drain stressors with single spacer
12/22/2011WO2011157461A1 Fabrication of a vertical heterojunction tunnel-fet
12/22/2011WO2011133247A3 Schottky diode
12/22/2011WO2011119293A3 Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
12/22/2011WO2011115891A3 Graphite and/or graphene semiconductor devices
12/22/2011WO2011112303A3 Methods of forming an array of memory cells, methods of forming a plurality of field effect transistors, methods of forming source/drain regions and isolation trenches, and methods of forming a series of spaced trenches into a substrate
12/22/2011WO2011109559A3 Structures and methods of fabricating dual gate devices
12/22/2011US20110312166 Methods of Manufacturing Power Semiconductor Devices with Shield and Gate Contacts
12/22/2011US20110312163 Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor
12/22/2011US20110312138 Methods of Manufacturing Power Semiconductor Devices with Trenched Shielded Split Gate Transistor
12/22/2011US20110312111 Semiconductor device and manufacturing method thereof
12/22/2011US20110311828 Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crysal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
12/22/2011US20110310920 Epitaxial growth of in-plane nanowires and nanowire devices
12/22/2011US20110310660 Magnetoresistance element and storage device using the same
12/22/2011US20110310568 Circuit Arrangement with Shunt Resistor
12/22/2011US20110310516 Esd protection in a standard cmos or bicmos ic process to enable high voltage input/outputs
12/22/2011US20110310322 Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
12/22/2011US20110309876 Thin film transistor and display device
12/22/2011US20110309510 Array substrate, display device having the same and method of manufacturing the same
12/22/2011US20110309480 Process for manufacturing power integrated devices having surface corrugations, and power integrated device having surface corrugations
12/22/2011US20110309479 Plasma Dicing and Semiconductor Devices Formed Thereof
12/22/2011US20110309478 Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation
12/22/2011US20110309477 Group iib/va semiconductors suitable for use in photovoltaic devices
12/22/2011US20110309476 Semiconductor device and method of manufacturing the same
12/22/2011US20110309475 Three-dimensional stacked structure semiconductor device having through-silicon via and signaling method for the semiconductor device
12/22/2011US20110309474 Trench capacitor
12/22/2011US20110309471 Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure
12/22/2011US20110309470 Trench MOS Barrier Schottky Rectifier With A Planar Surface Using CMP Techniques
12/22/2011US20110309469 Trench MOS Barrier Schottky Rectifier With A Planar Surface Using CMP Techniques
12/22/2011US20110309465 Seal ring structure in semiconductor devices
12/22/2011US20110309464 Semiconductor device including cell region and peripheral region having high breakdown voltage structure
12/22/2011US20110309463 Electrocaloric effect materials and thermal diodes
12/22/2011US20110309458 A sensor and method for fabricating the same
12/22/2011US20110309457 Method for Forming a Notched Gate Insulator for Advanced MIS Semiconductor Devices and Devices Thus Obtained
12/22/2011US20110309456 Semiconductor device
12/22/2011US20110309455 Gate-Last Fabrication of Quarter-Gap MGHK FET
12/22/2011US20110309449 Interface-free metal gate stack
12/22/2011US20110309446 Strained thin body cmos device having vertically raised source/drain stressors with single spacer
12/22/2011US20110309444 THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER
12/22/2011US20110309443 Method for controlling impurity density distribution in semiconductor device and semiconductor device made thereby
12/22/2011US20110309442 Laterally double diffused metal oxide semiconductor transistor having a reduced surface field structure and method therefor
12/22/2011US20110309441 Integrated semiconductor device having an insulating structure and a manufacturing method
12/22/2011US20110309439 Semiconductor device and method for manufacturing the same
12/22/2011US20110309438 Semiconductor apparatus and manufacturing method thereof
12/22/2011US20110309437 Semiconductor device
12/22/2011US20110309436 Power semiconductor device
12/22/2011US20110309435 Buried gate semiconductor device and method of manufacturing the same
12/22/2011US20110309434 Nonvolatile memory device and manufacturing method thereof
12/22/2011US20110309433 Semiconductor Device With Resistor Pattern And Method Of Fabricating The Same
12/22/2011US20110309432 Nonvolatile semiconductor memory device and method for manufacturing the same
12/22/2011US20110309431 Nonvolatile semiconductor memory device and method for manufacturing same
12/22/2011US20110309430 Non-Volatile Memory With Flat Cell Structures And Air Gap Isolation
12/22/2011US20110309429 Nonvolatile semiconductor memory device and manufacturing method thereof
12/22/2011US20110309428 Semiconductor device
12/22/2011US20110309427 Switching device and testing apparatus
12/22/2011US20110309426 Metal Control Gate Structures And Air Gap Isolation In Non-Volatile Memory
12/22/2011US20110309425 Air Gap Isolation In Non-Volatile Memory