H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2011
11/16/2011	CN102246284A Bipolar transistor
11/16/2011	CN102246283A Bipolar transistor
11/16/2011	CN102246128A Display device
11/16/2011	CN102245532A Sintered complex oxide and sputtering target comprising same
11/16/2011	CN102245531A Composite oxide sintered body and sputtering target comprising same
11/16/2011	CN102244202A Light-emitting element and display device
11/16/2011	CN102244108A Silicon carbide (SiC) metal oxide semiconductor (MOS) capacitor with composite dielectric layer and manufacturing method for SiC MOS capacitor with composite dielectric layer
11/16/2011	CN102244107A Easy-to-fill trench capacitor and preparation method thereof
11/16/2011	CN102244106A Schottky diode
11/16/2011	CN102244105A Thyristor with high hold voltage and low triggering voltage ESD (electronstatic discharge) characteristic
11/16/2011	CN102244104A Flat and lug combined bidirectional diode chip and manufacturing process thereof
11/16/2011	CN102244103A TFT substrate
11/16/2011	CN102244102A Electron tunneling based enclosure type grid control metal-insulator device
11/16/2011	CN102244101A Trench field effect transistor
11/16/2011	CN102244100A MOS (metal oxide semiconductor) power semiconductor device
11/16/2011	CN102244099A SiC IEMOSFET (Implantation and Epitaxial Metal-Oxide -Semiconductor Field Effect Transistor) device with epitaxy channel and manufacturing method of SiC IEMOSFET device
11/16/2011	CN102244098A Semiconducotor device and manufacturing method therefor
11/16/2011	CN102244097A Nitride semiconductor device
11/16/2011	CN102244096A 3300V planar non-punch-through insulated gate bipolar transistor chip and manufacturing process thereof
11/16/2011	CN102244095A Power semiconductor device
11/16/2011	CN102244094A III-V family semiconductor MOS (Metal Oxide Semiconductor) interface structure
11/16/2011	CN102244093A Structure and method of reducing transverse diffusion width of p-n junction isolation diffusion
11/16/2011	CN102244092A Junction termination structure of transverse high-pressure power semiconductor device
11/16/2011	CN102244091A Semiconductor component with a trench edge termination
11/16/2011	CN102244090A Semiconductor structure and organic electroluminescence element
11/16/2011	CN102244038A Thin film transistor and manufacturing method thereof
11/16/2011	CN102244009A Thin film transistor and manufacturing method thereof
11/16/2011	CN102244006A Thin film transistor and manufacturing method thereof
11/16/2011	CN102244005A Oxide thin film transistor and method of fabricating the same
11/16/2011	CN102244000A Semiconductor device, variable capacitance diode and formation method thereof
11/16/2011	CN102243992A Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
11/16/2011	CN101980363B Controllable self-clamping SensorFET composite lateral power device
11/16/2011	CN101859795B Semiconductor device
11/16/2011	CN101846875B Gray-scale photomask for defining patterns of source electrode, drain electrode and semiconductor layer of TFT
11/16/2011	CN101834202B N-type lateral insulated gate bipolar device capable of reducing hot carrier effect
11/16/2011	CN101826533B Switching component structure of active array-type display
11/16/2011	CN101819998B High voltage low power consumption SOI LDMOS transistor having strained silicon structure
11/16/2011	CN101789435B Super structure based on vertical gate SOI CMOS device and manufacturing method thereof
11/16/2011	CN101764136B Interdigital structure capable of regulating channel current of vertical gate SOI CMOS devices
11/16/2011	CN101728431B Coaxial transistor structure
11/16/2011	CN101711432B Vertical led with current guiding structure
11/16/2011	CN101699616B Channel MOS P-N junction Schottky diode structure and manufacturing method thereof
11/16/2011	CN101673755B Phase change memory cell utilizing composite structure diode and preparation method thereof
11/16/2011	CN101667579B Configurations and methods for manufacturing charge balanced devices
11/16/2011	CN101582443B Semiconductor device
11/16/2011	CN101536194B Power switching semiconductor devices including rectifying junction-shunts
11/16/2011	CN101533854B SOILDMOS transistor with changeover body connection
11/16/2011	CN101529566B Method for forming wiring film, transistor, and electronic device
11/16/2011	CN101515599B Semiconductor memory element
11/16/2011	CN101483180B Liquid crystal display device
11/16/2011	CN101436595B Integrated memory device, integrated memory chip and method for processing such memory chip
11/16/2011	CN101375401B Varying mesa dimensions in high cell density trench MOSFET
11/16/2011	CN101329482B LCD and thin film transistor array plate
11/16/2011	CN101266918B Method for manufacturing semiconductor device
11/16/2011	CN101233618B Semiconductor device and method of manufacturing the same
11/16/2011	CN101232046B III-nitride power semiconductor device
11/16/2011	CN101151721B Method of fabricating insulating layer and device of processing semiconductor device
11/16/2011	CN101142729B Semiconductor device based on a SCR
11/16/2011	CN101057333B Light emitting device
11/16/2011	CN101036233B Semiconductor component
11/15/2011	US8059374 TMR device with novel free layer structure
11/15/2011	US8059245 Active matrix type liquid crystal display and liquid crystal material
11/15/2011	US8059076 Display panel, mask and method of manufacturing the same
11/15/2011	US8058735 Wafer-level chip scale package having stud bump and method for fabricating the same
11/15/2011	US8058734 Semiconductor device and method of manufacturing the same
11/15/2011	US8058733 Self-aligned contact set
11/15/2011	US8058730 Semiconductor device having a multilayered interconnection structure
11/15/2011	US8058729 Titanium nitride films
11/15/2011	US8058709 Semiconductor device and manufacturing method thereof
11/15/2011	US8058707 Semiconductor devices having redundant through-die vias and methods of fabricating the same
11/15/2011	US8058706 Delamination resistant packaged die having support and shaped die having protruding lip on support
11/15/2011	US8058704 Bipolar transistor
11/15/2011	US8058703 Semiconductor transistor device and method of manufacturing the same
11/15/2011	US8058702 Phase change memory cell
11/15/2011	US8058699 Area sensor and display apparatus provided with an area sensor
11/15/2011	US8058698 High performance MTJ element for STT-RAM and method for making the same
11/15/2011	US8058697 Spin transfer MRAM device with novel magnetic synthetic free layer
11/15/2011	US8058696 High capacity low cost multi-state magnetic memory
11/15/2011	US8058695 Semiconductor device
11/15/2011	US8058692 Multiple-gate transistors with reverse T-shaped fins
11/15/2011	US8058689 Techniques to reduce substrate cross talk on mixed signal and RF circuit design
11/15/2011	US8058687 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
11/15/2011	US8058686 Semiconductor device including a columnar intermediate region and manufacturing method thereof
11/15/2011	US8058685 Trench MOSFET structures using three masks process
11/15/2011	US8058684 Semiconductor device and method for manufacturing the same
11/15/2011	US8058683 Access device having vertical channel and related semiconductor device and a method of fabricating the access device
11/15/2011	US8058682 Semiconductor device
11/15/2011	US8058681 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
11/15/2011	US8058680 Nonvolatile semiconductor memory with erase gate and its manufacturing method
11/15/2011	US8058676 Spin transistor using double carrier supply layer structure
11/15/2011	US8058674 Alternate 4-terminal JFET geometry to reduce gate to source capacitance
11/15/2011	US8058673 Biosensor using nanodot and method of manufacturing the same
11/15/2011	US8058670 Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up
11/15/2011	US8058657 Display device
11/15/2011	US8058655 Vertical junction field effect transistors having sloped sidewalls and methods of making
11/15/2011	US8058654 Display device and manufacturing method thereof
11/15/2011	US8058652 Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element
11/15/2011	US8058651 Thin film transistor array substrate and method for manufacturing the same
11/15/2011	US8058650 Thin film transistor panel for multi-domain liquid crystal display
11/15/2011	US8058649 Thin-film transistor and method of manufacturing the same

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