H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2011
12/22/2011	US20110309424 Structure of memory device and process for fabricting the same
12/22/2011	US20110309423 Semiconductor device having a trench gate and method for manufacturing
12/22/2011	US20110309422 Semiconductor device
12/22/2011	US20110309421 One-time programmable memory and method for making the same
12/22/2011	US20110309418 Magnetoresistance effect element and magnetic random access memory
12/22/2011	US20110309417 Method for Reshaping Silicon Surfaces with Shallow Trench Isolation
12/22/2011	US20110309416 Structure and method to reduce fringe capacitance in semiconductor devices
12/22/2011	US20110309415 Sensor using ferroelectric field-effect transistor
12/22/2011	US20110309413 Semiconductor device
12/22/2011	US20110309412 Superjunction collectors for transistors & semiconductor devices
12/22/2011	US20110309411 Field effect transistor
12/22/2011	US20110309409 Semiconductor device
12/22/2011	US20110309408 Semiconductor device and method of producing same
12/22/2011	US20110309400 Nitride semiconductor device and manufacturing method of the device
12/22/2011	US20110309396 Led Module having a Platform with a Central Recession
12/22/2011	US20110309376 Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor device
12/22/2011	US20110309375 Semiconductor device
12/22/2011	US20110309372 Enhancement-mode hfet circuit arrangement having high power and a high threshold voltage
12/22/2011	US20110309371 Schottky diode structure and method for fabricating the same
12/22/2011	US20110309370 Systems and methods for the crystallization of thin films
12/22/2011	US20110309364 Semiconductor display device
12/22/2011	US20110309363 Active matrix substrate, liquid crystal display apparatus having the same, and method for manufacturing active matrix substrate
12/22/2011	US20110309362 Flat panel display apparatus and method of manufacturing the same
12/22/2011	US20110309360 Process for forming an electroactive layer
12/22/2011	US20110309356 Method for forming semiconductor film, method for forming semiconductor device and semiconductor device
12/22/2011	US20110309355 Semiconductor device
12/22/2011	US20110309353 Semiconductor device and method for manufacturing the same
12/22/2011	US20110309336 Semiconducting graphene composition, and electrical device including the same
12/22/2011	US20110309335 Unipolar heterojunction depletion-layer transistor
12/22/2011	US20110309334 Graphene/Nanostructure FET with Self-Aligned Contact and Gate
12/22/2011	US20110309333 Semiconductor devices fabricated by doped material layer as dopant source
12/22/2011	US20110309332 Epitaxial source/drain contacts self-aligned to gates for deposited fet channels
12/22/2011	US20110309330 2-dimensional quantum wire array field effect transistor/power-transistor/switch/photo-cell
12/22/2011	US20110309329 Nitride semiconductor device
12/22/2011	US20110309323 Method of manufacturing nano device by arbitrarily printing nanowire devices thereon and intermediate building block useful for the method
12/22/2011	US20110309319 Horizontally oriented and vertically stacked memory cells
12/22/2011	US20110308593 Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer
12/22/2011	DE102011077769A1 Spannungsspitzenschutz für Leistungs-DMOS-Vorrichtungen Transient protection for power DMOS devices
12/22/2011	DE102011077764A1 Halbleitervorrichtung, die einen zellbereich und einen randbereich beinhaltet und eine struktur für hohe durchbruchspannung aufweist Semiconductor device, the cell region and a peripheral region includes and has a structure for a high breakdown voltage
12/22/2011	DE102011001529A1 Plasmazerteilung und dadurch gebildete Halbleiterbauelemente Plasmazerteilung and semiconductor devices formed thereby
12/22/2011	DE102010050522A1 Leitfähige Elektrodenstruktur und mit dieser leitfähigen Elektrodenstruktur ausgestattete Solarzelle Conductive electrode structure and equipped with these conductive electrode structure solar cell
12/22/2011	DE102010030345A1 Method for manufacturing piezoresistive sensor arrangement of inertial sensor e.g. rotation rate sensor, involves forming remaining strips of electrical insulating layer between strip guard and bar
12/22/2011	DE102010024257A1 Leistungshalbleiterbauelement mit zweistufigem Dotierungsprofil Power semiconductor component with two-stage doping profile
12/22/2011	DE102010017483A1 Integrated lateral power circuit i.e. integrated power semiconductor component, for use in electronic control unit utilized in e.g. motor car for heating airbag, has trench extending from horizontal surface to insulation area
12/22/2011	DE102008059648B4 Gateelektrodenstruktur mit großem ε, die nach der Transistorherstellung unter Anwendung eines Abstandshalters gebildet wird Gate electrode structure with large ε, which is formed after the transistor production using a spacer
12/22/2011	DE102007017833B4 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
12/22/2011	DE102005063535B4 Verfahren zur Herstellung einer Halbleiteranordnung A process for producing a semiconductor device
12/22/2011	DE102005054177B4 Verfahren zum Herstellen einer Vielzahl von gehäusten Sensormodulen A method of manufacturing a plurality of sensor modules packaged
12/22/2011	DE102005038943B4 Verfahren zum Herstellen eines Feldeffekttransistors (FET) mit Leitungskanälen A method of manufacturing a field effect transistor (FET) with ducts
12/22/2011	CA2781167A1 Method for manufacturing silicon carbide semiconductor device
12/22/2011	CA2779426A1 Method and apparatus of fabricating silicon carbide semiconductor device
12/22/2011	CA2778197A1 Method and apparatus for manufacturing silicon carbide semiconductor device
12/21/2011	EP2398058A2 Semiconductor device
12/21/2011	EP2398057A2 High performance semi-conductor element with two stage doping profile
12/21/2011	EP2398049A2 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
12/21/2011	EP2398045A2 Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer
12/21/2011	EP2396820A1 Image and light sensor chip packages
12/21/2011	EP2396812A1 Multiple vt field-effect transistor devices
12/21/2011	EP1502303B1 High voltage switching devices and process for forming same
12/21/2011	EP1393379B1 Trench schottky rectifier
12/21/2011	EP1018164B1 Silicon carbide static induction transistor structure
12/21/2011	CN202084551U 肖特基势垒二极管 Schottky barrier diodes
12/21/2011	CN202084550U 硅双向触发二极管 Silicon diac
12/21/2011	CN202084549U 高电压硅整流二极管 High voltage rectifier diodes
12/21/2011	CN202084548U 快恢复二极管 Fast Recovery Diodes
12/21/2011	CN202084546U Tft基板、显示装置 Tft substrate, a display device
12/21/2011	CN202084525U 一种igbt模块及其支撑装置 One kind igbt module and its supporting device
12/21/2011	CN1922727B 半导体器件及ic卡、ic标签、rfid、转发器、票据、证券、护照、电子装置、包和外衣的制造方法 Method for manufacturing semiconductor devices and ic cards, ic tags, rfid, transponder, notes, securities, passports, electronic devices, packages and outerwear
12/21/2011	CN1725914B 有源矩阵有机电致发光显示器件及其制造方法 The active matrix organic electroluminescent display device and manufacturing method thereof
12/21/2011	CN1722924B 电致发光显示器件 Electroluminescent Display Devices
12/21/2011	CN102292816A 有机半导体装置及其制造方法 The organic semiconductor device and manufacturing method thereof
12/21/2011	CN102292801A 场效应晶体管及其制造方法 Field effect transistor and manufacturing method thereof
12/21/2011	CN102292799A 具有均匀硅化的鳍片末端部分的多栅极晶体管 Having a uniform silicide fin end portion multi-gate transistor
12/21/2011	CN102292342A 芳香族化合物及其制造方法 Aromatic compound and its manufacturing method
12/21/2011	CN102290509A 一种低缺陷高亮度的衬底结构体,制备方法及其用途 A low defect high luminance substrate structure, preparation and use thereof
12/21/2011	CN102290447A 柱状钻石萧基二极管及其制作方法 Xiao diamond columnar base diode and manufacturing method thereof
12/21/2011	CN102290446A 半导体设备及其制造方法 Semiconductor device and manufacturing method thereof
12/21/2011	CN102290445A 晶体管组件及其制造方法 Transistor elements and a manufacturing method
12/21/2011	CN102290444A Sonos结构、sonos存储器 Sonos structure, sonos memory
12/21/2011	CN102290443A 一种非晶薄膜晶体管及其制备方法 An amorphous thin film transistor and its preparation method
12/21/2011	CN102290442A 薄膜晶体管和显示装置 A thin film transistor and a display device
12/21/2011	CN102290441A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/21/2011	CN102290440A 晶体管及其制造方法 Transistor and manufacturing method thereof
12/21/2011	CN102290439A 一种有刻蚀终止层的InAlN/GaN HEMT器件 A kind of etch stop layer InAlN / GaN HEMT devices
12/21/2011	CN102290438A 可变栅极场效应晶体管以及包含它的电气和电子设备 The variable gate field effect transistor and the containing electrical and electronic equipment
12/21/2011	CN102290437A Vdmos晶体管结构及其形成方法 Vdmos transistor structure and method of forming
12/21/2011	CN102290436A 新型绝缘栅双极晶体管背面结构及其制备方法 New insulated gate bipolar transistor on the back of the structure and preparation method
12/21/2011	CN102290435A 一种大面积完美量子点及其阵列制造方法 One kind of perfect quantum dots and a large area array manufacturing method
12/21/2011	CN102290434A 带栅下缓冲层结构的金属半导体场效应晶体管及制作方法 Metal-semiconductor field-effect transistors and production methods with a buffer layer under the gate structure
12/21/2011	CN102290433A 具有两级掺杂曲线的功率半导体器件 Curve having two power semiconductors doped
12/21/2011	CN102290432A 显示器件及其制造方法 Display device and manufacturing method thereof
12/21/2011	CN102290422A 显示装置及其制造方法、剥离方法及发光装置的制造方法 Device manufacturing method and a manufacturing method of peeling the light emitting display device and a method
12/21/2011	CN102290421A 平板显示装置和制造该平板显示装置的方法 The method of manufacturing the flat panel display device and a flat panel display device
12/21/2011	CN102290418A 静电放电保护装置 ESD protection device
12/21/2011	CN102290417A 一种基于dtscr的瞬态电压抑制器 Based dtscr transient voltage suppressor
12/21/2011	CN102290414A 半导体装置 Semiconductor device
12/21/2011	CN102290413A 阵列基板及其制造方法和液晶显示器 Array substrate and manufacturing method thereof, and a liquid crystal display
12/21/2011	CN102290412A 像素结构 Pixel structure
12/21/2011	CN102290350A 利用cmp技术的具有平坦表面的沟槽mos势垒肖特基整流器 Cmp technology use has a flat surface trench mos Schottky barrier rectifiers
12/21/2011	CN102290340A 一种改变静电保护器件触发电压的方法及装置 An altered trigger voltage electrostatic protection device method and apparatus

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