Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2012
03/22/2012US20120068226 Formation of Devices by Epitaxial Layer Overgrowth
03/22/2012US20120068224 Method of producing semiconductor wafer, and semiconductor wafer
03/22/2012US20120068222 Semiconductor Device and Method for Manufacturing the Same
03/22/2012US20120068221 Semiconductor device
03/22/2012US20120068220 Reverse conducting-insulated gate bipolar transistor
03/22/2012US20120068195 Method for manufacturing silicon carbide substrate and silicon carbide substrate
03/22/2012US20120068194 Silicon carbide semiconductor devices
03/22/2012US20120068193 Structure and method for increasing strain in a device
03/22/2012US20120068192 CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES
03/22/2012US20120068191 Method of controlling stress in group-iii nitride films deposited on substrates
03/22/2012US20120068190 Gallium Nitride Devices with Electrically Conductive Regions
03/22/2012US20120068189 Method for Vertical and Lateral Control of III-N Polarity
03/22/2012US20120068188 Defects Annealing and Impurities Activation in III-Nitride Compound Semiconductors
03/22/2012US20120068186 Electronic Device
03/22/2012US20120068184 Dislocation reduction in non-polar iii-nitride thin films
03/22/2012US20120068183 Power-insulated-gate field-effect transistor
03/22/2012US20120068181 Integrated circuit device and method for manufacturing integrated circuit device
03/22/2012US20120068180 Methods of forming low interface resistance contacts and structures formed thereby
03/22/2012US20120068179 Semiconductor device and manufacturing method thereof
03/22/2012US20120068178 Trench polysilicon diode
03/22/2012US20120068161 Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor
03/22/2012US20120068160 Semiconductor device and method for fabricating the same
03/22/2012US20120068159 Nonvolatile semiconductor memory device
03/22/2012US20120068157 Transistor Having Graphene Base
03/22/2012US20120068156 InN Nanowire Based Multifunctional Nanocantilever Sensors
03/22/2012US20120068155 Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device
03/22/2012US20120068150 Nanowire Field Effect Transistors
03/22/2012US20120068149 Apparatus of memory array using finfets
03/22/2012US20120067425 Aluminum base material, metal substrate having insulating layer employing the aluminum base material, semiconductor element, and solar battery
03/22/2012US20120067410 Schottky-barrier junction element, and photoelectric conversion element and solar cell using the same
03/22/2012DE19912961B4 Halbleiterdünnfilm, Herstellungsverfahren dafür, sowie den Halbleiterdünnfilm aufweisende Solarzelle Semiconductor thin film manufacturing method thereof, and the semiconductor thin-film solar cell having
03/22/2012DE10262121B4 Semiconducting component with increased breakdown voltage in edge region has shorter distance from edge cell trench to that of adjacent cell than between trenches of cells in cell field
03/22/2012DE10259373B4 Überstromfeste Schottkydiode mit niedrigem Sperrstrom Overcurrent Fixed Schottky diode with low reverse current
03/22/2012DE102011083230A1 Halbleitervorrichtung Semiconductor device
03/22/2012DE102011083038A1 Transistor und Verfahren zum Herstellen eines Transistors Transistor and method of manufacturing a transistor
03/22/2012DE102011082774A1 Mischkristalle enthaltend Halbleitermaterialien, Verfahren zu deren Herstellung und deren Anwendungen Mixed crystals comprising semiconductor materials, methods for their preparation and their applications
03/22/2012DE102011081426A1 Halbleitervorrichtung Semiconductor device
03/22/2012DE102010046215A1 Semiconductor structure for electronic component, has strained monocrystalline region formed between monocrystalline regions made of semiconductor materials having different lattice constants along the reference direction
03/22/2012DE102010040860A1 Schichtsystem aus einem siliziumbasierten Träger und einer direkt auf dem Träger aufgebrachten Heterostruktur Layer system consisting of a silicon-based substrate and a deposited directly on the substrate heterostructure
03/22/2012DE102010040061B4 Erhöhte Ladungsträgerbeweglichkeit in p-Kanal Transistoren durch Vorsehen eines verspannungsinduzierenden schwellwerteinstellenden Halbleitermaterials im Kanal Increased charge carrier mobility in p-channel transistors by providing a stress-inducing schwellwerteinstellenden semiconductor material in the channel
03/22/2012DE102007001108B4 Diode und Verfahren zu ihrer Herstellung Diode and methods for their preparation
03/22/2012DE102006050405B4 Siliziumcarbid-Schottky-Diode Silicon carbide Schottky diode
03/22/2012CA2811223A1 Two- and three- terminal molecular electronic devices with ballistic electron transport
03/21/2012EP2432023A1 Trench gate semiconductor device
03/21/2012EP2432022A1 Insulating gate type bipolar transistor
03/21/2012EP2432021A1 A transistor with a field plate
03/21/2012EP2432020A1 Semiconductor device
03/21/2012EP2432005A1 Epitaxial substrate for electronic device and process for producing same
03/21/2012EP2432004A1 Semiconductor device
03/21/2012EP2432003A2 Silicon Carbide Semiconductor Device
03/21/2012EP2432002A1 Silicon carbide substrate and semiconductor device
03/21/2012EP2432001A1 Method for producing semiconductor substrate
03/21/2012EP2432000A1 Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
03/21/2012EP2431504A1 Method for manufacturing an organic thin fim transistor using a nano-crystalline diamond film
03/21/2012EP2431503A1 Method of manufacturing an organic electroluminescent device or an organic photoelectric receiving device using a nano-crystalline diamond film
03/21/2012EP2430678A1 Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor
03/21/2012EP2430672A1 Tunnel diodes made of stress-compensated compound semiconductor layers
03/21/2012EP2430651A1 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
03/21/2012EP1779438B8 Iii-v hemt devices
03/21/2012EP1509957B1 High power, high luminous flux light emitting diode and method of making same
03/21/2012EP1364400B9 Method for producing thin layers on a specific support and an application thereof
03/21/2012CN202172070U 带有离子注入区的固体放电管 The solid ion-implanted region with a discharge tube
03/21/2012CN202171704U 一种阵列基板及其接触端子区电极结构 One kind of array substrate and the contact terminal area electrode structure
03/21/2012CN1790671B Method for preparing semiconductor device
03/21/2012CN1714415B Metalized film capacitor
03/21/2012CN102388447A Fabrication and structure of asymmetric field-effect transistors using l-shaped spacers
03/21/2012CN102388442A In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile
03/21/2012CN102388434A Method for manufacturing semiconductor substrate
03/21/2012CN102388433A Method for manufacturing a semiconductor substrate
03/21/2012CN102388413A Active element substrate and manufacturing method thereof, and display apparatus using active element substrate manufactured by this manufacturing method
03/21/2012CN102386240A Cylindrical embedded capacitors
03/21/2012CN102386239A Indium phosphide (InP)-based PIN switching diode of planar structure and preparation method of indium phosphide-based PIN switching diode
03/21/2012CN102386238A Sensor apparatus and method for mounting semiconductor sensor device
03/21/2012CN102386237A Thin-film transistor, array substrate and device and preparation method
03/21/2012CN102386236A Semiconductor device and method for manufacturing the same
03/21/2012CN102386235A Thin film transistor, method for manufacturing the same, and display device using the same
03/21/2012CN102386234A Strained asymmetric source/drain
03/21/2012CN102386233A 半导体器件 Semiconductor devices
03/21/2012CN102386232A Depletion MOS transistor and charging arrangement
03/21/2012CN102386231A 半导体装置 Semiconductor device
03/21/2012CN102386230A Forming Crown Active Regions for FinFETs
03/21/2012CN102386229A Gate controlled bipolar junction transistor on fin-like field effect transistor (finfet) structure
03/21/2012CN102386228A Layout structure of power metal oxide semi-field effect transistor (power MOSFET)
03/21/2012CN102386227A Both-way surface field subdued drain electrode isolation double diffused drain metal-oxide -semiconductor field effect transistor (DDDMOS) transistor and method
03/21/2012CN102386226A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
03/21/2012CN102386225A Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof
03/21/2012CN102386224A Longitudinal hyperjunction metal oxide field effect transistor device and production method thereof
03/21/2012CN102386223A High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method
03/21/2012CN102386222A Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier
03/21/2012CN102386221A Compound semiconductor device and method of manufacturing the same
03/21/2012CN102386220A IGBT with back reinforcing structure and fabrication method thereof
03/21/2012CN102386219A Parasitic transversal type plug-and-ply (PNP) triode in silicon germanium (SiGe) heterojunction bipolar transistor (HBT) process and manufacturing method
03/21/2012CN102386218A Vertical parasitic type precision navigation processor (PNP) device in bipolar complementary metal oxide semiconductor (BiCMOS) technology and manufacture method thereof
03/21/2012CN102386217A 栅极堆叠结构及其制作方法 The gate stack structure and manufacturing method thereof
03/21/2012CN102386216A Nitride-based compound semiconductor and nitride-based compound semiconductor device
03/21/2012CN102386215A Semiconductor device and method of manufacturing the same
03/21/2012CN102386214A MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) electro-static discharge protective structure with local lightly-doped drain injected shielding
03/21/2012CN102386213A Semiconductor device, method of manufacturing the same, and power supply apparatus
03/21/2012CN102386212A Semiconductor device structure and manufacturing method thereof
03/21/2012CN102386211A LDMOS device and fabrication method thereof