Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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03/22/2012 | US20120068226 Formation of Devices by Epitaxial Layer Overgrowth |
03/22/2012 | US20120068224 Method of producing semiconductor wafer, and semiconductor wafer |
03/22/2012 | US20120068222 Semiconductor Device and Method for Manufacturing the Same |
03/22/2012 | US20120068221 Semiconductor device |
03/22/2012 | US20120068220 Reverse conducting-insulated gate bipolar transistor |
03/22/2012 | US20120068195 Method for manufacturing silicon carbide substrate and silicon carbide substrate |
03/22/2012 | US20120068194 Silicon carbide semiconductor devices |
03/22/2012 | US20120068193 Structure and method for increasing strain in a device |
03/22/2012 | US20120068192 CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES |
03/22/2012 | US20120068191 Method of controlling stress in group-iii nitride films deposited on substrates |
03/22/2012 | US20120068190 Gallium Nitride Devices with Electrically Conductive Regions |
03/22/2012 | US20120068189 Method for Vertical and Lateral Control of III-N Polarity |
03/22/2012 | US20120068188 Defects Annealing and Impurities Activation in III-Nitride Compound Semiconductors |
03/22/2012 | US20120068186 Electronic Device |
03/22/2012 | US20120068184 Dislocation reduction in non-polar iii-nitride thin films |
03/22/2012 | US20120068183 Power-insulated-gate field-effect transistor |
03/22/2012 | US20120068181 Integrated circuit device and method for manufacturing integrated circuit device |
03/22/2012 | US20120068180 Methods of forming low interface resistance contacts and structures formed thereby |
03/22/2012 | US20120068179 Semiconductor device and manufacturing method thereof |
03/22/2012 | US20120068178 Trench polysilicon diode |
03/22/2012 | US20120068161 Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor |
03/22/2012 | US20120068160 Semiconductor device and method for fabricating the same |
03/22/2012 | US20120068159 Nonvolatile semiconductor memory device |
03/22/2012 | US20120068157 Transistor Having Graphene Base |
03/22/2012 | US20120068156 InN Nanowire Based Multifunctional Nanocantilever Sensors |
03/22/2012 | US20120068155 Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
03/22/2012 | US20120068150 Nanowire Field Effect Transistors |
03/22/2012 | US20120068149 Apparatus of memory array using finfets |
03/22/2012 | US20120067425 Aluminum base material, metal substrate having insulating layer employing the aluminum base material, semiconductor element, and solar battery |
03/22/2012 | US20120067410 Schottky-barrier junction element, and photoelectric conversion element and solar cell using the same |
03/22/2012 | DE19912961B4 Halbleiterdünnfilm, Herstellungsverfahren dafür, sowie den Halbleiterdünnfilm aufweisende Solarzelle Semiconductor thin film manufacturing method thereof, and the semiconductor thin-film solar cell having |
03/22/2012 | DE10262121B4 Semiconducting component with increased breakdown voltage in edge region has shorter distance from edge cell trench to that of adjacent cell than between trenches of cells in cell field |
03/22/2012 | DE10259373B4 Überstromfeste Schottkydiode mit niedrigem Sperrstrom Overcurrent Fixed Schottky diode with low reverse current |
03/22/2012 | DE102011083230A1 Halbleitervorrichtung Semiconductor device |
03/22/2012 | DE102011083038A1 Transistor und Verfahren zum Herstellen eines Transistors Transistor and method of manufacturing a transistor |
03/22/2012 | DE102011082774A1 Mischkristalle enthaltend Halbleitermaterialien, Verfahren zu deren Herstellung und deren Anwendungen Mixed crystals comprising semiconductor materials, methods for their preparation and their applications |
03/22/2012 | DE102011081426A1 Halbleitervorrichtung Semiconductor device |
03/22/2012 | DE102010046215A1 Semiconductor structure for electronic component, has strained monocrystalline region formed between monocrystalline regions made of semiconductor materials having different lattice constants along the reference direction |
03/22/2012 | DE102010040860A1 Schichtsystem aus einem siliziumbasierten Träger und einer direkt auf dem Träger aufgebrachten Heterostruktur Layer system consisting of a silicon-based substrate and a deposited directly on the substrate heterostructure |
03/22/2012 | DE102010040061B4 Erhöhte Ladungsträgerbeweglichkeit in p-Kanal Transistoren durch Vorsehen eines verspannungsinduzierenden schwellwerteinstellenden Halbleitermaterials im Kanal Increased charge carrier mobility in p-channel transistors by providing a stress-inducing schwellwerteinstellenden semiconductor material in the channel |
03/22/2012 | DE102007001108B4 Diode und Verfahren zu ihrer Herstellung Diode and methods for their preparation |
03/22/2012 | DE102006050405B4 Siliziumcarbid-Schottky-Diode Silicon carbide Schottky diode |
03/22/2012 | CA2811223A1 Two- and three- terminal molecular electronic devices with ballistic electron transport |
03/21/2012 | EP2432023A1 Trench gate semiconductor device |
03/21/2012 | EP2432022A1 Insulating gate type bipolar transistor |
03/21/2012 | EP2432021A1 A transistor with a field plate |
03/21/2012 | EP2432020A1 Semiconductor device |
03/21/2012 | EP2432005A1 Epitaxial substrate for electronic device and process for producing same |
03/21/2012 | EP2432004A1 Semiconductor device |
03/21/2012 | EP2432003A2 Silicon Carbide Semiconductor Device |
03/21/2012 | EP2432002A1 Silicon carbide substrate and semiconductor device |
03/21/2012 | EP2432001A1 Method for producing semiconductor substrate |
03/21/2012 | EP2432000A1 Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate |
03/21/2012 | EP2431504A1 Method for manufacturing an organic thin fim transistor using a nano-crystalline diamond film |
03/21/2012 | EP2431503A1 Method of manufacturing an organic electroluminescent device or an organic photoelectric receiving device using a nano-crystalline diamond film |
03/21/2012 | EP2430678A1 Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor |
03/21/2012 | EP2430672A1 Tunnel diodes made of stress-compensated compound semiconductor layers |
03/21/2012 | EP2430651A1 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
03/21/2012 | EP1779438B8 Iii-v hemt devices |
03/21/2012 | EP1509957B1 High power, high luminous flux light emitting diode and method of making same |
03/21/2012 | EP1364400B9 Method for producing thin layers on a specific support and an application thereof |
03/21/2012 | CN202172070U 带有离子注入区的固体放电管 The solid ion-implanted region with a discharge tube |
03/21/2012 | CN202171704U 一种阵列基板及其接触端子区电极结构 One kind of array substrate and the contact terminal area electrode structure |
03/21/2012 | CN1790671B Method for preparing semiconductor device |
03/21/2012 | CN1714415B Metalized film capacitor |
03/21/2012 | CN102388447A Fabrication and structure of asymmetric field-effect transistors using l-shaped spacers |
03/21/2012 | CN102388442A In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile |
03/21/2012 | CN102388434A Method for manufacturing semiconductor substrate |
03/21/2012 | CN102388433A Method for manufacturing a semiconductor substrate |
03/21/2012 | CN102388413A Active element substrate and manufacturing method thereof, and display apparatus using active element substrate manufactured by this manufacturing method |
03/21/2012 | CN102386240A Cylindrical embedded capacitors |
03/21/2012 | CN102386239A Indium phosphide (InP)-based PIN switching diode of planar structure and preparation method of indium phosphide-based PIN switching diode |
03/21/2012 | CN102386238A Sensor apparatus and method for mounting semiconductor sensor device |
03/21/2012 | CN102386237A Thin-film transistor, array substrate and device and preparation method |
03/21/2012 | CN102386236A Semiconductor device and method for manufacturing the same |
03/21/2012 | CN102386235A Thin film transistor, method for manufacturing the same, and display device using the same |
03/21/2012 | CN102386234A Strained asymmetric source/drain |
03/21/2012 | CN102386233A 半导体器件 Semiconductor devices |
03/21/2012 | CN102386232A Depletion MOS transistor and charging arrangement |
03/21/2012 | CN102386231A 半导体装置 Semiconductor device |
03/21/2012 | CN102386230A Forming Crown Active Regions for FinFETs |
03/21/2012 | CN102386229A Gate controlled bipolar junction transistor on fin-like field effect transistor (finfet) structure |
03/21/2012 | CN102386228A Layout structure of power metal oxide semi-field effect transistor (power MOSFET) |
03/21/2012 | CN102386227A Both-way surface field subdued drain electrode isolation double diffused drain metal-oxide -semiconductor field effect transistor (DDDMOS) transistor and method |
03/21/2012 | CN102386226A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing |
03/21/2012 | CN102386225A Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof |
03/21/2012 | CN102386224A Longitudinal hyperjunction metal oxide field effect transistor device and production method thereof |
03/21/2012 | CN102386223A High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method |
03/21/2012 | CN102386222A Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier |
03/21/2012 | CN102386221A Compound semiconductor device and method of manufacturing the same |
03/21/2012 | CN102386220A IGBT with back reinforcing structure and fabrication method thereof |
03/21/2012 | CN102386219A Parasitic transversal type plug-and-ply (PNP) triode in silicon germanium (SiGe) heterojunction bipolar transistor (HBT) process and manufacturing method |
03/21/2012 | CN102386218A Vertical parasitic type precision navigation processor (PNP) device in bipolar complementary metal oxide semiconductor (BiCMOS) technology and manufacture method thereof |
03/21/2012 | CN102386217A 栅极堆叠结构及其制作方法 The gate stack structure and manufacturing method thereof |
03/21/2012 | CN102386216A Nitride-based compound semiconductor and nitride-based compound semiconductor device |
03/21/2012 | CN102386215A Semiconductor device and method of manufacturing the same |
03/21/2012 | CN102386214A MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) electro-static discharge protective structure with local lightly-doped drain injected shielding |
03/21/2012 | CN102386213A Semiconductor device, method of manufacturing the same, and power supply apparatus |
03/21/2012 | CN102386212A Semiconductor device structure and manufacturing method thereof |
03/21/2012 | CN102386211A LDMOS device and fabrication method thereof |