Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2012
03/01/2012US20120049189 Semiconductor device and method of manufacturing the same
03/01/2012US20120049188 Method of forming polycrystalline silicon layer and thin film transistor and organic light emitting device including the polycrystalline silicon layer
03/01/2012US20120049184 Display device
03/01/2012US20120049183 Electronic device, manufacturing method of electronic device, and sputtering target
03/01/2012US20120049182 Nitride-based compound semiconductor and nitride-based compound semiconductor device
03/01/2012US20120049181 Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition
03/01/2012US20120049180 Compound semiconductor device and method of manufacturing the same
03/01/2012US20120049171 Electronic device and method of manufacturing the same, and semiconductor device and method of manufacturing the same
03/01/2012US20120049161 Formation of a vicinal semiconductor-carbon alloy surface and a graphene layer thereupon
03/01/2012US20120049160 Field-effect transistor
03/01/2012US20120049150 Semiconductor device, manufacturing method therefor, and solar cell
03/01/2012DE19727530B4 Herstellungsverfahren für ein Halbleiterbauelement mit einer SOI-Struktur und entsprechendes Halbleiterbauelement Manufacturing method of a semiconductor device with a SOI structure semiconductor device and corresponding
03/01/2012DE112008003787T5 Halbleitervorrichtung Semiconductor device
03/01/2012DE112004002491B4 Verfahren zur Herstellung einer kontaktlosen Speicheranordnung A process for preparing a non-contact memory device
03/01/2012DE102011081589A1 Depletion-transistor und ladeanordnung Depletion transistor and upload arrangement
03/01/2012DE102011080841A1 Verfahren zur Fertigung einer Siliciumcarbid-Halbleitervorrichtung A method for manufacturing a silicon carbide semiconductor device
03/01/2012DE102011079307A1 Halbleitervorrichtung Semiconductor device
03/01/2012DE102011053147A1 Grabenstrukturen in direktem kontakt Grave structures in direct contact
03/01/2012DE102011052731A1 Verfahren zum Bilden einer Halbleitervorrichtung und Halbleitervorrichtung mit einer integrierten Polydiode A method of forming a semiconductor device and semiconductor device comprising an integrated Polydiode
03/01/2012DE102011050958A1 Hochspannungshalbleiterbauelemente High voltage semiconductor devices
03/01/2012DE102010040066A1 Gateelektroden eines Halbleiterbauelements, die durch eine Hartmaske und Doppelbelichtung in Verbindung mit einem Größenreduzierungsabstandshalter hergestellt sind Gate electrodes of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer
03/01/2012DE102010040061A1 Erhöhte Ladungsträgerbeweglichkeit in p-Kanal Transistoren durch Vorsehen eines verspannungsinduzierenden schwellwerteinstellenden Halbleitermaterials im Kanal Increased charge carrier mobility in p-channel transistors by providing a stress-inducing schwellwerteinstellenden semiconductor material in the channel
03/01/2012DE102010040058A1 Polysiliziumwiderstände, die in einem Halbleiterbauelement mit Metallgateelektrodenstrukturen mit großem ε hergestellt sind Polysilicon resistors which are produced in a semiconductor device with metal gate electrode structures with large ε
03/01/2012DE102010035296A1 Planar high-voltage transistor i.e. laterally diffused metal oxide semiconductor transistor, for integrated smart power switching circuit, has oxide bar whose length on region of interconnect structure is larger than width of structure
03/01/2012DE102005041321B4 Grabenstrukturhalbleitereinrichtungen Grave structure semiconductor devices
03/01/2012DE10053463B4 Verfahren zur Herstellung eines Halbleitersubstrats A process for producing a semiconductor substrate
02/2012
02/29/2012EP2423966A1 Field effect transistor and display apparatus
02/29/2012EP2423965A1 Electrochemically-gated transistor and a method for its manufacture
02/29/2012EP2423960A2 Improved electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving.
02/29/2012EP2423954A1 Manufacturing method of semiconductor device
02/29/2012EP2423952A2 Patterning a gate stack of a non-volatile memory (nvm) with simultaneous etch in non-nvm area
02/29/2012EP2423264A1 Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires
02/29/2012EP2422372A1 Oxide semiconductor
02/29/2012EP2422361A1 Double self-aligned metal oxide tft
02/29/2012EP1724028B1 Method for preparing thin film of condensed polycyclc aromatic compound
02/29/2012EP1555694B1 Spin transistor using spin filter effect and nonvolatile memory using spin transistor
02/29/2012CN202153521U 一种可精确控制掺杂区掺杂浓度的半导体器件 Concentration in a semiconductor device can be precisely controlled dopant doping
02/29/2012CN202153520U 一种igbt栅源侧台保护功率器件 One kind igbt gate-source-side units protecting power devices
02/29/2012CN202153519U 一种vdmos栅源侧台保护功率器件 One kind vdmos gate-source-side units protecting power devices
02/29/2012CN202153518U 一种保护栅源电极与栅漏电极的igbt功率器件 A protective gate-source electrode and a drain electrode gate igbt power devices
02/29/2012CN1933178B Semiconductor device
02/29/2012CN1607685B Composition for preparing organic insulator
02/29/2012CN1573488B Liquid crystal display and thin film transistor array panel therefor
02/29/2012CN102365750A Switchable junction with intrinsic diode
02/29/2012CN102365749A Configuration and fabrication of semiconductor structure using empty and filled wells
02/29/2012CN102365748A Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length
02/29/2012CN102365747A Compensated gate misfet and method for fabricating the same
02/29/2012CN102365746A Heterojunction oxide non-volatile memory device
02/29/2012CN102365745A Back diffusion suppression structures
02/29/2012CN102365744A Image and light sensor chip packages
02/29/2012CN102365740A Boosting transistor performance with non-rectangular channels
02/29/2012CN102365732A Structure and fabrication of field-effect transistor having source/drain extension defined by multiple local concentration maxima
02/29/2012CN102365731A Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions
02/29/2012CN102365730A Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
02/29/2012CN102365729A Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket
02/29/2012CN102365728A Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants
02/29/2012CN102365727A Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile
02/29/2012CN102365720A Structure and method for forming a salicide on the gate electrode of a trench-gate fet
02/29/2012CN102365714A Graded well implantation for asymmetric transistors having reduced gate electrode pitches
02/29/2012CN102365549A Encapsulated nanoparticles
02/29/2012CN102365274A Tetrathiafulvalene derivative, and organic film and organic transistor using the same
02/29/2012CN102364690A Tunneling field effect transistor (TFET) and manufacturing method thereof
02/29/2012CN102364689A Floating gate structure of flash memory device and manufacturing method for floating gate structure
02/29/2012CN102364688A Vertical double-diffusion metal oxide semiconductor field effect transistor (MOSFET)
02/29/2012CN102364682A Perpendicular double-diffusion MOS (Metal Oxide Semiconductor) test structure as well as forming and testing methods
02/29/2012CN102364663A Grid side wall etching method, metal-oxide-semiconductor (MOS) device manufacturing method and MOS device
02/29/2012CN102364661A Grid side wall forming method, metal-oxide-semiconductor (MOS) device manufacturing method and MOS device
02/29/2012CN102034686B Capacitor and forming method thereof
02/29/2012CN101952987B Nanotube device
02/29/2012CN101933140B Nanostructures and methods of making the same
02/29/2012CN101897027B Semiconductor device and method of manufacturing the device, and method of manufacturing trench gate
02/29/2012CN101840935B SOI (Silicon-on-insulator) MOSFET lateral (metal-oxide-semiconductor field effect transistor) device
02/29/2012CN101826463B Schottky diode and phase-change memory which share metal layer and manufacturing method thereof
02/29/2012CN101807574B Groove type power MOS device and manufacturing method thereof
02/29/2012CN101796641B Channel strain engineering in field-effect-transistor
02/29/2012CN101765907B Organic transistor, organic transistor array and display apparatus
02/29/2012CN101752364B Array substrate for display device and method of fabricating the same
02/29/2012CN101752233B Method for in-place doping polysilicon gate
02/29/2012CN101740639B Manufacturing method of polycrystalline silicon electric resistance
02/29/2012CN101685819B 半导体装置 Semiconductor device
02/29/2012CN101558473B Method for forming silicon based thin film by plasma cvd method
02/29/2012CN101512773B Closed cell configuration to increase channel density for sub-micron planar semiconductor power device
02/29/2012CN101253447B Thin-film transistor substrate and display device
02/28/2012US8126794 Replicated derivatives having demand-based, adjustable returns, and trading exchange therefor
02/28/2012US8125092 Semiconductor device packages and assemblies
02/28/2012US8125090 Semiconductor power module
02/28/2012US8125089 Optically-initiated silicon carbide high voltage switch
02/28/2012US8125086 Substrate for semiconductor package
02/28/2012US8125085 Semiconductor device having wiring with oxide layer of impurity from the wiring
02/28/2012US8125084 Semiconductor device and semiconductor device manufacturing method
02/28/2012US8125082 Reduction of silicide formation temperature on SiGe containing substrates
02/28/2012US8125066 Package on package configurations with embedded solder balls and interposal layer
02/28/2012US8125065 Elimination of RDL using tape base flip chip on flex for die stacking
02/28/2012US8125056 Double trench rectifier
02/28/2012US8125055 Packaging technology
02/28/2012US8125050 Semiconductor device having a mim capacitor and method of manufacturing the same
02/28/2012US8125048 Antifuse structure for in line circuit modification
02/28/2012US8125045 Dielectric isolation type semiconductor device and manufacturing method therefor
02/28/2012US8125040 Two mask MTJ integration for STT MRAM
02/28/2012US8125039 One-time programmable, non-volatile field effect devices and methods of making same
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