Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2012
03/14/2012CN102376749A Silicon wafer and production method thereof
03/14/2012CN102376719A Unit structure of MTP (Multi-Time Programmable) device
03/14/2012CN102376715A Capacitance-free dynamic random access memory structure and preparation method thereof
03/14/2012CN102376711A Semiconductor memory device and manufacturing method thereof
03/14/2012CN102376709A Semiconductor device
03/14/2012CN102376705A ESD protection device and method for fabricating the same
03/14/2012CN102376702A Two-terminal multi-channel ESD device and method thereof
03/14/2012CN102376584A Semiconductor device and method for manufacturing the same
03/14/2012CN102376582A Semiconductor device structure and method for producing same
03/14/2012CN102376581A MOS (Metal-Oxide-Semiconductor) transistor and manufacturing method thereof
03/14/2012CN102376574A Semiconductor device and manufacturing method thereof
03/14/2012CN102376573A NMOS transistor and formation method thereof
03/14/2012CN102376557A Production method of doped polysilicon grid, MOS (Metal Oxide Semiconductor) transistor and production method thereof
03/14/2012CN102376556A Method for producing insulation layer between two electrodes
03/14/2012CN102376551A Manufacturing method for structure of semiconductor device and structure of semiconductor device
03/14/2012CN102376535A Semiconductor device and fabricating method thereof
03/14/2012CN102376533A Method and device for manufacturing alternately arranged P-type and N-type semiconductor thin layer structure
03/14/2012CN102376358A Circuit and system of aggregated area anti-fuse in cmos processes
03/14/2012CN102024705B Semiconductor and method for producing same
03/14/2012CN101925987B Method for forming strained channel PMOS devices and integrated circuits therefrom
03/14/2012CN101916784B SOI (Silicon on Insulator) variable buried oxide layer thickness device and preparation method thereof
03/14/2012CN101834204B Semiconductor device and manufacturing method thereof
03/14/2012CN101681807B Manufacturing method of semiconductor substrate and semiconductor device
03/14/2012CN101339959B Thin film transistor and preparation of semiconductor film
03/14/2012CN101111945B Nitride semiconductor device and method of growing nitride semiconductor crystal layer
03/13/2012US8134548 DC-DC converter switching transistor current measurement technique
03/13/2012US8134239 Address line wiring structure and printed wiring board having same
03/13/2012US8134236 Electronic module with switching functions and method for producing the same
03/13/2012US8134234 Application of Mn for damage restoration after etchback
03/13/2012US8134227 Stacked integrated circuit package system with conductive spacer
03/13/2012US8134222 MOS capacitor structures
03/13/2012US8134221 Inductor and filter
03/13/2012US8134219 Schottky diodes
03/13/2012US8134215 MEMS diaphragm
03/13/2012US8134214 Electronic device, system, and method comprising differential sensor MEMS devices and drilled substrates
03/13/2012US8134212 Implanted well breakdown in high voltage devices
03/13/2012US8134211 Triggered silicon controlled rectifier for RF ESD protection
03/13/2012US8134207 High breakdown voltage semiconductor circuit device
03/13/2012US8134206 Semiconductor device
03/13/2012US8134205 Layout structure of power MOS transistor
03/13/2012US8134203 Nonvolatile semiconductor memory device
03/13/2012US8134202 Capacitorless one-transistor semiconductor memory device having improved data retention abilities and operation characteristics
03/13/2012US8134201 Semiconductor memory device provided with stacked layer gate including charge accumulation layer and control gate, and manufacturing method thereof
03/13/2012US8134200 Nonvolatile semiconductor memory including a gate insulating film and an inter-gate insulating film
03/13/2012US8134199 Nonvolatile semiconductor memory
03/13/2012US8134198 Nonvolatile semiconductor memory
03/13/2012US8134196 Integrated circuit system with metal-insulator-metal circuit element
03/13/2012US8134194 Memory cells, memory cell constructions, and memory cell programming methods
03/13/2012US8134193 Magneto-resistance effect element and magnetic memory
03/13/2012US8134192 Integrated structure of MEMS device and CMOS image sensor device
03/13/2012US8134189 Semiconductor device and method of manufacturing the same
03/13/2012US8134188 Circuits and methods for improved FET matching
03/13/2012US8134187 Integrated mask-programmable logic devices with multiple metal levels and manufacturing process thereof
03/13/2012US8134182 Field-effect transistor, semiconductor device including the field-effect transistor, and method of producing semiconductor device
03/13/2012US8134181 Semiconductor device
03/13/2012US8134180 Nitride semiconductor device with a vertical channel and method for producing the nitride semiconductor device
03/13/2012US8134178 Light-emitting element
03/13/2012US8134177 Switching element, semiconductor device and method of manufacturing the same
03/13/2012US8134175 Nanocrystals including III-V semiconductors
03/13/2012US8134168 Group-III nitride semiconductor device
03/13/2012US8134165 Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
03/13/2012US8134164 Semiconductor device, optical print head and image forming apparatus
03/13/2012US8134161 Package for light emitting device
03/13/2012US8134159 Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same
03/13/2012US8134158 TFT-LCD pixel unit and method for manufacturing the same
03/13/2012US8134157 Semiconductor device and method of manufacturing same
03/13/2012US8134156 Semiconductor device including zinc oxide containing semiconductor film
03/13/2012US8134155 Liquid crystal display device capable of reducing leakage current, and fabrication method thereof
03/13/2012US8134154 Thin film transistor and display
03/13/2012US8134153 Semiconductor apparatus and fabrication method of the same
03/13/2012US8134152 CMOS thin film transistor, method of fabricating the same and organic light emitting display device having laminated PMOS poly-silicon thin film transistor with a top gate configuration and a NMOS oxide thin film transistor with an inverted staggered bottom gate configuration
03/13/2012US8134150 Hydrazine-free solution deposition of chalcogenide films
03/13/2012US8134149 Organic light emitting device
03/13/2012US8134142 Tunneling transistor with barrier
03/13/2012US8134140 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
03/13/2012US8134139 Programmable metallization cell with ion buffer layer
03/13/2012US8134138 Programmable metallization memory cell with planarized silver electrode
03/13/2012US8133790 Semiconductor device and method for fabricating the same
03/13/2012US8133780 Semiconductor integrated circuit device and process for manufacturing the same
03/13/2012US8133775 Semiconductor device with mushroom electrode and manufacture method thereof
03/13/2012US8133773 Apparatus and method for reducing photo leakage current for TFT LCD
03/13/2012US8133770 Semiconductor device and method for manufacturing the same
03/13/2012US8133757 Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current
03/13/2012US8132458 Acceleration sensor resistant to excessive force breakage
03/08/2012WO2012030897A1 N-doped single crystal diamond substrates and methods therefor
03/08/2012WO2012029700A1 Composition for insulating layer of organic thin-film transistor, and organic thin-film transistor
03/08/2012WO2012029674A1 Field effect transistor and method for manufacturing semiconductor device
03/08/2012WO2012029671A1 Semiconductor device, semiconductor device unit, active matrix substrate, liquid crystal panel, and liquid crystal display
03/08/2012WO2012029664A1 Organic thin film transistor and method for manufacturing same
03/08/2012WO2012029652A1 Semiconductor device
03/08/2012WO2012029644A1 Semiconductor device and process for production thereof
03/08/2012WO2012029638A1 Semiconductor device
03/08/2012WO2012029637A1 Semiconductor device and driving method thereof
03/08/2012WO2012029619A1 Organic semiconductor compound
03/08/2012WO2012029596A1 Method for manufacturing semiconductor device
03/08/2012WO2012029544A1 Organic semiconductor particulate material, organic semiconductor thin-film, dispersion liquid for forming organic semiconductor film, method for producing organic semiconductor thin-film, and organic thin-film transistor
03/08/2012WO2012029455A1 Sintered oxide and oxide semiconductor thin film
03/08/2012WO2012029454A1 Sintered oxide and oxide semiconductor thin film
03/08/2012WO2012029450A1 Silicon etchant and method for producing transistor by using same
03/08/2012WO2012029408A1 Oxide sintered body and oxide semiconductor thin film
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