Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2012
03/27/2012US8143136 Method for fabricating crown-shaped capacitor
03/27/2012US8143131 Method of fabricating spacers in a strained semiconductor device
03/27/2012US8143129 Integration of non-volatile charge trap memory devices and logic CMOS devices
03/27/2012US8143124 Methods of making power semiconductor devices with thick bottom oxide layer
03/27/2012US8143123 Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices
03/27/2012US8143115 Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
03/27/2012US8143102 Integrated circuit package system including die having relieved active region
03/27/2012US8143101 Semiconductor package and the method of making the same
03/27/2012US8143093 Process to make metal oxide thin film transistor array with etch stopping layer
03/27/2012US8142566 Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate
03/22/2012WO2012037474A1 Two-and three-terminal molecular electronic devices with ballistic electron transport
03/22/2012WO2012037136A2 Improved lateral uniformity in silicon recess etch
03/22/2012WO2012036943A1 Integrated mems and esd protection devices
03/22/2012WO2012036879A1 Nanowire field effect transistors
03/22/2012WO2012036641A1 Method for dispersing carbon nanotubes using chondroitin sulfate cation salt
03/22/2012WO2012036282A1 Magnetoresistive element and magnetic random-access memory
03/22/2012WO2012036247A1 Semiconductor device
03/22/2012WO2012036229A1 Semiconductor device and manufacturing method for same
03/22/2012WO2012036165A1 Semiconductor element
03/22/2012WO2012036104A1 Method for manufacturing semiconductor device
03/22/2012WO2012036079A1 Manufacturing method for semiconductor device
03/22/2012WO2012036001A1 Memory device
03/22/2012WO2012035984A1 Semiconductor device and display device
03/22/2012WO2012035975A1 Liquid crystal display device and manufacturing method thereof
03/22/2012WO2012035888A1 Silicon etching fluid and method for producing transistor using same
03/22/2012WO2012035684A1 Semiconductor device and production method for same
03/22/2012WO2012035679A1 Semiconductor device and manufacturing method therefor
03/22/2012WO2012035194A1 An apparatus and associated methods
03/22/2012WO2012035135A1 Semiconductor chip and method for producing the same
03/22/2012WO2012034515A1 High-voltage mos device and method for manufacturing the same
03/22/2012WO2012034372A1 Trench vertical double diffused metal oxide semiconductor transistor
03/22/2012WO2012034371A1 Mos transistor
03/22/2012WO2012034345A1 Graphene device and manufacturing method thereof
03/22/2012US20120069651 EEPROM-based, data-oriented combo NVM design
03/22/2012US20120069649 Non-uniform switching based non-volatile magnetic based memory
03/22/2012US20120069648 Spin torque transfer memory cell structures and methods
03/22/2012US20120069647 Spin torque transfer memory cell structures and methods
03/22/2012US20120069646 Spin torque transfer memory cell structures and methods
03/22/2012US20120069642 Magnetoresistive element and magnetic random access memory
03/22/2012US20120068761 Method and apparatus for protection of an anti-fuse element in a high-voltage integrated circuit
03/22/2012US20120068698 Structure of tmr and fabrication method of integrated 3-axis magnetic field sensor and sensing circuit
03/22/2012US20120068689 Eeprom cell with charge loss
03/22/2012US20120068336 Method for Fabricating a Neo-Layer Using Stud Bumped Bare Die
03/22/2012US20120068314 Crosslinkable dielectrics and methods of preparation and use thereof
03/22/2012US20120068311 Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and method for manufacturing semiconductor device
03/22/2012US20120068310 Semiconductor device
03/22/2012US20120068309 Transistor and Method of Manufacturing a Transistor
03/22/2012US20120068308 Semiconductor device and semiconductor device production method
03/22/2012US20120068304 Semiconductor structure and method for making same
03/22/2012US20120068303 Semiconductor Device Comprising a Metal System Including a Separate Inductor Metal Layer
03/22/2012US20120068301 Monolithic magnetic induction device
03/22/2012US20120068298 Semiconductor device having super junction structure and method for manufacturing the same
03/22/2012US20120068296 Semiconductor device
03/22/2012US20120068287 Highly Sensitive Photo-Sensing Element and Photo-Sensing Device Using the Same
03/22/2012US20120068286 Magnetic random access memory and method of manufacturing the same
03/22/2012US20120068285 Magnetoresistive effect element, magnetic memory, and method of manufacturing magnetoresistive effect element
03/22/2012US20120068284 Magnetoresistive effect element and magnetic memory
03/22/2012US20120068283 Semiconductor storage device and method of manufacturing the same
03/22/2012US20120068282 Semiconductor device and manufacturing method of the same
03/22/2012US20120068281 Magnetic recording element and nonvolatile memory device
03/22/2012US20120068280 Magnetic Nano-Ring Device and Method of Fabrication
03/22/2012US20120068279 Domain wall assisted spin torque transfer magnetresistive random access memory structure
03/22/2012US20120068278 Pull up electrode and waffle type microstructure
03/22/2012US20120068277 Semiconductor Manufacturing and Semiconductor Device with semiconductor structure
03/22/2012US20120068276 Microstructure with an enhanced anchor
03/22/2012US20120068275 Semiconductor device and method for fabricating the same
03/22/2012US20120068271 Manufacturing method of semiconductor device
03/22/2012US20120068267 Strained devices, methods of manufacture and design structures
03/22/2012US20120068265 Wiring layer structure and process for manufacture thereof
03/22/2012US20120068263 Power Switching Semiconductor Devices Including Rectifying Junction-Shunts
03/22/2012US20120068262 Integrated MOSFET Device and Method with Reduced Kelvin Contact Impedance and Breakdown Voltage
03/22/2012US20120068260 Method for producing a structure element and semiconductor component comprising a structure element
03/22/2012US20120068259 Three dimensional semiconductor memory device and method for fabricating the same
03/22/2012US20120068258 Semiconductor device and method for manufacturing same
03/22/2012US20120068257 Semiconductor memory device
03/22/2012US20120068256 Non-volatile semiconductor memory device
03/22/2012US20120068255 Three-dimensional semiconductor memory devices
03/22/2012US20120068254 Nonvolatile semiconductor memory device and method of manufacturing the same
03/22/2012US20120068253 Nonvolatile semiconductor memory device and method for manufacturing the same
03/22/2012US20120068252 Semiconductor memory device
03/22/2012US20120068251 Semiconductor memory device
03/22/2012US20120068250 Semiconductor device and manufacturing method thereof
03/22/2012US20120068249 Nonvolatile memory device and method of manufacturing the same
03/22/2012US20120068248 Power semiconductor device
03/22/2012US20120068246 Semiconductor memory device and method of manufacturing the same
03/22/2012US20120068245 Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps
03/22/2012US20120068244 Semiconductor memory device and method for manufacturing same
03/22/2012US20120068243 Semiconductor device and manufacturing method thereof
03/22/2012US20120068242 Semiconductor devices and methods of fabricating the same
03/22/2012US20120068241 Nonvolatile semiconductor memory device and method of manufacturing the same
03/22/2012US20120068240 Semiconductor Device and Method using a Sacrificial Layer
03/22/2012US20120068238 Low impedance transmisson line
03/22/2012US20120068236 Non-uniform switching based non-volatile magnetic based memory
03/22/2012US20120068234 Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration
03/22/2012US20120068233 Transistors having stressed channel regions and methods of forming transistors having stressed channel regions
03/22/2012US20120068232 Method for manufacturing semiconductor device
03/22/2012US20120068231 Vertical discrete devices with trench contacts and associated methods of manufacturing
03/22/2012US20120068229 Massively Parallel Interconnect Fabric for Complex Semiconductor Devices
03/22/2012US20120068228 HETEROJUNCTION BIOPLAR TRANSISTOR STRUCTURE WITH GaPSbAs BASE
03/22/2012US20120068227 Semiconductor device
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