Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2012
03/15/2012US20120061728 Semiconductor on insulator (xoi) for high performance field effect transistors
03/15/2012US20120061727 Gallium nitride based semiconductor devices and methods of manufacturing the same
03/15/2012US20120061726 Lateral insulated-gate bipolar transistor
03/15/2012US20120061725 Power Semiconductor Package
03/15/2012US20120061724 Semiconductor device
03/15/2012US20120061723 Semiconductor device
03/15/2012US20120061720 VTS insulated gate bipolar transistor
03/15/2012US20120061719 Shockley diode having a low turn-on voltage
03/15/2012US20120061688 Power semiconductor device and method for manufacturing the power semiconductor device
03/15/2012US20120061687 Silicon carbide substrate and semiconductor device
03/15/2012US20120061686 Silicon carbide substrate, semiconductor device, and method of manufacturing silicon carbide substrate
03/15/2012US20120061685 Memory Devices And Memory Cells
03/15/2012US20120061684 Transistor devices and methods of making
03/15/2012US20120061683 Group iii nitride semiconductor growth substrate, group iii nitride semiconductor epitaxial substrate, group iii nitride semiconductor element and group iii nitride semiconductor free-standing substrate, and method of producing the same
03/15/2012US20120061682 Sic semiconductor device and method for manufacturing the same
03/15/2012US20120061681 Mechanism of forming sic crystalline on si substrates to allow integration of gan and si electronics
03/15/2012US20120061680 Gallium nitride based semiconductor devices and methods of manufacturing the same
03/15/2012US20120061679 Silicon Polymers, Methods of Polymerizing Silicon Compounds, and Methods of Forming Thin Films From Such Silicon Polymers
03/15/2012US20120061678 Method of laser annealing semiconductor layer and semiconductor devices produced thereby
03/15/2012US20120061676 Thin film transistor
03/15/2012US20120061674 Electric Device
03/15/2012US20120061672 Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
03/15/2012US20120061671 Semiconductor device and light-emitting device
03/15/2012US20120061670 Method for manufacturing semiconductor device
03/15/2012US20120061668 Semiconductor device and method for manufacturing the same
03/15/2012US20120061665 Liquid crystal display device and manufacturing method thereof
03/15/2012US20120061663 Semiconductor device and method for manufacturing the same
03/15/2012US20120061662 Semiconductor device, power diode, and rectifier
03/15/2012US20120061661 Semiconductor structure and fabricating method thereof
03/15/2012US20120061649 Strain-inducing semiconductor regions
03/15/2012US20120061644 Blue Light Emitting Semiconductor Nanocrystal Materials
03/15/2012US20120061348 Large Scale Patterned Growth of Aligned One-Dimensional Nanostructures
03/15/2012US20120060922 Layered inorganic nanocrystal photovoltaic devices
03/15/2012DE19953348B4 MOS-Halbleitervorrichtung ohne Latchup eines parasitären Bipolartransistors MOS type semiconductor device without latchup of the parasitic bipolar transistor
03/15/2012DE102011077647A1 Dünnschichttransistorsubstrat mit einer widerstandsarmen Busleitungsstruktur und Herstellungsverfahren für dasselbe Thin-film transistor substrate having a low resistance Busleitungsstruktur and manufacturing method for the same
03/15/2012DE102011053362A1 Leistungs-halbleiterchip-verkapselung Power semiconductor chip encapsulation
03/15/2012DE102011051597A1 Hochspannungsbipolartransistor mit Grabenfeldplatte Hochspannungsbipolartransistor with grave field plate
03/15/2012DE102007008777B4 Halbleiterbauelement mit Zellenstruktur und Verfahren zur Herstellung desselben Of the same semiconductor device with cell structure and methods for preparing
03/15/2012DE102007007807B4 Halbleiterelement Semiconductor element
03/15/2012DE102007005558B4 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
03/15/2012DE102005056426B4 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
03/15/2012DE102004041883B4 Halbleitervorrichtung Semiconductor device
03/14/2012EP2428996A2 Gallium Nitride Based Semiconductor Devices and Methods of Manufacturing the Same
03/14/2012EP2428995A2 Gallium Nitride Based Semiconductor Devices and Methods of Manufacturing the Same
03/14/2012EP2428994A1 Method and system for depositing a thin-film transistor
03/14/2012EP2428986A2 Reducing transistor junction capacitance by recessing drain and source regions
03/14/2012EP2428985A1 Method for manufacturing a strained channel MOS transistor
03/14/2012EP2428983A1 Semiconductor device and method of producing same
03/14/2012EP2428981A1 Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails
03/14/2012EP2427912A1 Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
03/14/2012EP1844498B1 Method of fabricating a dual-gate fet
03/14/2012EP1573822B1 Complementary bipolar transistors with trench-constrained sinkers and isolation regions
03/14/2012EP1497869B1 Semiconductor component comprising an integrated capacitor structure that has a plurality of metallization planes
03/14/2012EP1198851B1 Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device
03/14/2012EP1086495B1 High-voltage semiconductor component, method for the production and use thereof
03/14/2012CN202167495U Improved mixing rectifier diode structure
03/14/2012CN202167494U 台面工艺可控硅芯片结构 SCR technology chip mesa structure
03/14/2012CN202167493U 一种降低对通隔离扩散横向扩散宽度的结构 A method of reducing the isolation diffusion through lateral diffusion on the width of the structure
03/14/2012CN202167491U Tft像素单元 Tft pixel unit
03/14/2012CN202167479U Surface mount type diode improved structure
03/14/2012CN102379042A Field effect transistor, method for manufacturing same, and electronic device using same
03/14/2012CN102379033A 半导体器件 Semiconductor devices
03/14/2012CN102379032A Transverse junction field effect transistor
03/14/2012CN102379031A Lateral diode and method of manufacturing the same
03/14/2012CN102379026A Method for manufacturing a semiconductor substrate
03/14/2012CN102379025A Process for production of silicon carbide substrate
03/14/2012CN102379024A Method for manufacturing a semiconductor substrate
03/14/2012CN102378794A Organic semiconductor ink composition and method for forming organic semiconductor pattern using same
03/14/2012CN102376781A Semiconductor varactor assembly and varactor assembly
03/14/2012CN102376780A Silicon pedestal with embedded high density capacitor
03/14/2012CN102376779A Sic schottky diode and manufacturing method thereof
03/14/2012CN102376778A Junction barrier schottky rectifiers and methods of making thereof
03/14/2012CN102376777A Junction barrier schottky having low forward voltage drop
03/14/2012CN102376776A Parasitic PIN(positive-intrinsic negative) diode in BiCMOS(Bipolar Complementary Metal Oxide Semiconductor) process, and manufacturing method thereof
03/14/2012CN102376775A Parasitic PIN (Personal Identification Number) device in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process and manufacturing method thereof
03/14/2012CN102376774A Composant de protection bidirectionnel dissymetrique
03/14/2012CN102376773A Semiconductor device having lateral diode
03/14/2012CN102376772A Vertical diode and processing method thereof
03/14/2012CN102376771A Vertical diode and processing method thereof
03/14/2012CN102376770A Floating-gate device and method therefor
03/14/2012CN102376769A Ultrathin transistor and manufacturing method thereof
03/14/2012CN102376768A Sensing fet integrated with high-voltage vertical transistor
03/14/2012CN102376767A Transistor component with reduced short-circuit current
03/14/2012CN102376766A Semiconductor device and manufacturing method thereof
03/14/2012CN102376765A 半导体器件及其制作方法 Semiconductor device and manufacturing method thereof
03/14/2012CN102376764A Semiconductor device and method for manufacturing same
03/14/2012CN102376763A Semiconductor assembly
03/14/2012CN102376762A Super junction LDMOS(Laterally Diffused Metal Oxide Semiconductor) device and manufacturing method thereof
03/14/2012CN102376761A LDMOS ESD(Laterally Diffused Metal Oxide Semiconductor Electro-Static Discharge) structure
03/14/2012CN102376760A Enhanced high electron mobility transistor and manufacturing method thereof
03/14/2012CN102376759A Semiconductor device having both igbt area and diode area
03/14/2012CN102376758A Insulated gate bipolar transistor, manufacturing method thereof and trench gate structure manufacturing method
03/14/2012CN102376757A Transverse parasitic PNP device in SiGe HBT technology and manufacture method thereof
03/14/2012CN102376756A Polysilicon gate structure
03/14/2012CN102376755A Tantalum-based electrode stack
03/14/2012CN102376754A Semiconductor device structure and manufacturing method for the same
03/14/2012CN102376753A Silicon germanium source/drain structure and manufacturing method thereof
03/14/2012CN102376752A Substrate for epitaxial wafer, epitaxial wafer and semiconductor device
03/14/2012CN102376751A Silicon carbide trench semiconductor device
03/14/2012CN102376750A Edge termination region for semiconductor device
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