Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2012
02/23/2012US20120043612 Device Layout in Integrated Circuits to Reduce Stress from Embedded Silicon-Germanium
02/23/2012US20120043608 Partially Depleted Dielectric Resurf LDMOS
02/23/2012US20120043607 Tunneling Field-Effect Transistor with Low Leakage Current
02/23/2012US20120043605 Semiconductor device and method for forming the same
02/23/2012US20120043604 Semiconductor device and method for manufacturing the same
02/23/2012US20120043603 Method of manufacturing semiconductor device, and semiconductor device
02/23/2012US20120043602 Power MOSFET and Its Edge Termination
02/23/2012US20120043601 Nonvolatile semiconductor memory device and method for manufacturing same
02/23/2012US20120043600 Floating-Gate Device and Method Therefor
02/23/2012US20120043599 Nonvolatile semiconductor memory device and method for manufacturing the same
02/23/2012US20120043597 Sea-of-fins structure on a semiconductor substrate and method of fabrication
02/23/2012US20120043596 Semiconductor devices and structures including at least partially formed container capacitors
02/23/2012US20120043595 Capacitor device and method of fabricating the same
02/23/2012US20120043594 Micro-Electro-Mechanical Device And Manufacturing Method For The Same
02/23/2012US20120043593 Semiconductor Device Structure and Method for Manufacturing the same
02/23/2012US20120043592 Semiconductor device and method for forming the same
02/23/2012US20120043591 Semiconductor device and method of manufacturing the same
02/23/2012US20120043590 Linear-Cap Varactor Structures for High-Linearity Applications
02/23/2012US20120043588 Semiconductor device
02/23/2012US20120043587 Semiconductor device and method of manufacturing the same
02/23/2012US20120043586 Semiconductor device and method for manufacturing the same
02/23/2012US20120043585 Field Effect Transistor Device with Shaped Conduction Channel
02/23/2012US20120043583 Low leakage, low capacitance electrostatic discharge (esd) silicon controlled recitifer (scr), methods of manufacture and design structure
02/23/2012US20120043582 Semiconductor device having both igbt area and diode area
02/23/2012US20120043581 Semiconductor device
02/23/2012US20120043580 Semiconductor Device and Manufacturing Method Thereof
02/23/2012US20120043556 Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
02/23/2012US20120043553 Hybrid Semiconductor Device Having a GaN Transistor and a Silicon MOSFET
02/23/2012US20120043551 Second contact schottky metal layer to improve GaN schottky diode performance
02/23/2012US20120043549 Nonvolatile semiconductor memory device
02/23/2012US20120043548 Thin film transistor and display unit
02/23/2012US20120043547 Thin film charged body sensor
02/23/2012US20120043545 Thin film transistor display panel and manufacturing method thereof
02/23/2012US20120043544 Semiconductor device and manufacturing method thereof
02/23/2012US20120043543 Semiconductor device and manufacturing method therefor
02/23/2012US20120043542 Semiconductor device
02/23/2012US20120043541 Semiconductor device
02/23/2012US20120043540 Semiconductor device, method for manufacturing same, and display device
02/23/2012US20120043537 Process for producing semiconductive layers
02/23/2012US20120043528 Homo-material heterophased quantum well
02/23/2012US20120043520 Disturb-resistant non-volatile memory device and method
02/23/2012US20120043518 Variable resistance memory element and fabrication methods
02/23/2012US20120042927 Photovoltaic device front contact
02/23/2012DE10297021B4 Grabenstruktur für Halbleiterbauelemente Grave structure for semiconductor devices
02/23/2012DE102011081029A1 Halbleitervorrichtung mit sowohl einem igbt-bereich als auch einem diodenbereich A semiconductor device having both a igbt area and a diode-range
02/23/2012DE102011080891A1 Halbleitervorrichtung Semiconductor device
02/23/2012DE102011079138A1 Vertikales transistorbauelement Vertical transistor-device
02/23/2012DE102010034886A1 Pseudosubstrat zur Verwendung bei der Herstellung von Halbleiterbauelementen und Verfahren zur Herstellung eines Pseudosubstrates Pseudo-substrate for use in the manufacture of semiconductor devices and method for producing a pseudo-substrate
02/23/2012DE102009053158B4 Verfahren zum Herstellen einer Leistungshalbleitervorrichtung mit Grabengate A method of manufacturing a power semiconductor device having gate grave
02/23/2012DE102009047891B4 Verfahren zur Herstellung eines Transistors mit verbesserten Füllbedingungen in einem Austauschgateverfahren durch Eckenverrundung vor dem vollständigen Entfernen eines Platzhaltermaterials A method of manufacturing a transistor with improved filling conditions in a replacement gate process by corner rounding prior to complete removal of a placeholder material
02/23/2012DE102009023376B4 Einstellen der Austrittsarbeit in Metallgateelektrodenstrukturen mit großem ε durch selektives Entfernen einer Barrierenschicht Setting the work function metal gate electrode structures with large ε by selectively removing a barrier layer
02/23/2012DE102007020659B4 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
02/23/2012DE102005052734B4 Halbleiterstruktur, Verfahren zum Betreiben einer Halbleiterstruktur und Verfahren zum Herstellen einer Halbleiterstruktur A semiconductor structure, method of operating a semiconductor structure and method of fabricating a semiconductor structure
02/22/2012EP2421048A1 Thin film transistor and method for manufacturing thin film transistor
02/22/2012EP2421047A1 Semiconductor device and method for manufacturing same
02/22/2012EP2421046A1 MOSFET having a capacitance control region
02/22/2012EP2421045A1 SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE
02/22/2012EP2421044A1 Edge Termination Region for Semiconductor Device
02/22/2012EP2421043A1 Quantum dot device
02/22/2012EP2421040A1 A modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
02/22/2012EP2421031A1 Manufacturing method of semiconductor device
02/22/2012EP2421030A2 Display device
02/22/2012EP2421027A2 Memory device comprising a polycrystalline-silicon floating gate having impurities therein and manufacturing method thereof
02/22/2012EP2420599A1 Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
02/22/2012EP2419936A1 Strain control in semiconductor devices
02/22/2012EP2419935A1 P-type semiconductor devices
02/22/2012EP2050124B1 Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails
02/22/2012EP1927138B1 Semiconductor device
02/22/2012EP1711966B1 Vertical fin-fet mos devices
02/22/2012EP1423898B1 An arrangement for esd protection of an integrated circuit
02/22/2012CN202150460U 永磁发电机专用高结温低压降可控硅芯片 PMG dedicated high junction temperature low pressure drop thyristor chips
02/22/2012CN202150452U Square nail head lead wire used in diode
02/22/2012CN1791965B 用于半导体布置的结构和制造半导体布置的方法 The structure and manufacturing method of a semiconductor arrangement for a semiconductor arrangement
02/22/2012CN1779990B 有机薄膜晶体管及使用其的有机场致发光显示装置 The organic thin film transistor using the same, and an organic light emitting display device
02/22/2012CN102362354A 半导体装置 Semiconductor device
02/22/2012CN102362353A 碳化硅双极结晶体管 SiC bipolar junction transistor
02/22/2012CN102362338A Process for forming an electroactive layer
02/22/2012CN102362336A Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate
02/22/2012CN102361036A Semiconductor structure with metal source and metal drain and forming method for structure
02/22/2012CN102361035A Structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without epitaxial layer
02/22/2012CN102361034A Vertical selection tube and memory cell formed by vertical selection tube
02/22/2012CN102361031A Semiconductor device used for SOI (silicon-on-insulator) high-voltage integrated circuit
02/22/2012CN102361029A Common-gate common-source multi-drain carbon nanotube conducting channel field-effect transistor
02/22/2012CN102361011A Method for forming gate of semiconductor device
02/22/2012CN102361010A T type gate high electron mobility transistor (HEMT) device and manufacturing method thereof
02/22/2012CN102361007A Method for etching groove and semiconductor device
02/22/2012CN101901830B 绝缘体上硅的正反导通横向绝缘栅双极晶体管 The ABM is a silicon on insulator through lateral insulated gate bipolar transistor
02/22/2012CN101802979B 化合物半导体衬底、化合物半导体衬底的制造方法以及半导体器件 A compound semiconductor substrate, a method of manufacturing a compound semiconductor substrate and a semiconductor device
02/22/2012CN101743616B 半导体装置的制造方法 The method of manufacturing a semiconductor device
02/22/2012CN101740573B 半导体器件 Semiconductor devices
02/22/2012CN101667574B 具有抗esd电容器的集成电路布置和相应的制造方法 Arrangement of the integrated circuit and a corresponding method for manufacturing a capacitor having anti esd
02/22/2012CN101562044B 存储单元的编程方法 The method of programming the memory cell
02/22/2012CN101506958B 场效应晶体管 FET
02/22/2012CN101499473B 具有绝缘栅半导体元件的半导体器件和绝缘栅双极晶体管 A semiconductor element having an insulated gate semiconductor device and an insulated gate bipolar transistor
02/22/2012CN101454840B 半导体器件 Semiconductor devices
02/21/2012USRE43200 High power light emitting diode package
02/21/2012US8121162 Nanocrystal structures
02/21/2012US8121125 Accelerated TCP (transport control protocol) stack processing
02/21/2012US8120742 Display panel with driving circuit and common electrode within sealant and manufacturing method thereof
02/21/2012US8120386 Amplifiers using gated diodes
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