Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2013
05/09/2013US20130113055 Sensor device manufacturing method and sensor device
05/09/2013US20130113053 Semiconductor structure and process thereof
05/09/2013US20130113052 Metal-oxide-semiconductor field-effect transistor and method for manufacturing the same
05/09/2013US20130113051 High performance low power bulk fet device and method of manufacture
05/09/2013US20130113050 Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening
05/09/2013US20130113047 Mosfet structure with t-shaped epitaxial silicon channel
05/09/2013US20130113045 Electrostatic discharge (esd) device and semiconductor structure
05/09/2013US20130113044 Semiconductor device
05/09/2013US20130113041 Semiconductor transistor device with optimized dopant profile
05/09/2013US20130113040 Semiconductor Device Comprising Transistor Structures and Methods for Forming Same
05/09/2013US20130113039 Semiconductor device
05/09/2013US20130113038 Trench mosfet with split trenched gate structures in cell corners for gate charge reduction
05/09/2013US20130113037 Method for manufacturing semiconductor device and semiconductor device
05/09/2013US20130113035 Semiconductor device and method of manufacturing same
05/09/2013US20130113034 Non-volatile semiconductor memory device, production method for same, and charge storage film
05/09/2013US20130113033 Nonvolatile memory device and method for fabricating the same
05/09/2013US20130113032 Semiconductor memory device and method for manufacturing same
05/09/2013US20130113031 Kink poly structure for improving random single bit failure
05/09/2013US20130113030 Semiconductor device
05/09/2013US20130113028 Semiconductor device and field effect transistor
05/09/2013US20130113027 Metal Oxide Semiconductor Transistor and Manufacturing Method Thereof
05/09/2013US20130113026 Fin field effect transistor gate oxide
05/09/2013US20130113025 Semiconductor device structure and method for manufacturing the same
05/09/2013US20130113023 Multi-Fin Device by Self-Aligned Castle Fin Formation
05/09/2013US20130113022 Sige hbt and manufacturing method thereof
05/09/2013US20130113021 Sige hbt having deep pseudo buried layer and manufacturing method thereof
05/09/2013US20130113020 Sige hbt and method of manufacturing the same
05/09/2013US20130113019 Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region
05/09/2013US20130113018 Field effect transistor
05/09/2013US20130113017 Electronic device for protecting from electrostatic discharge
05/09/2013US20130112997 Silicon carbide substrate, semiconductor device, and soi wafer
05/09/2013US20130112996 Semiconductor device and method for manufacturing same
05/09/2013US20130112995 Semiconductor wafer and method for manufacturing the same
05/09/2013US20130112994 Semiconductor module and method for manufacturing semiconductor module
05/09/2013US20130112993 Semiconductor device and wiring substrate
05/09/2013US20130112992 High temperature transducer using soi, silicon carbide or gallium nitride electronics
05/09/2013US20130112991 Silicon carbide schottky-barrier diode device and method for manufacturing the same
05/09/2013US20130112990 Gallium Nitride Devices with Compositionally-Graded Transition Layer
05/09/2013US20130112986 Gallium Nitride Semiconductor Devices and Method Making Thereof
05/09/2013US20130112985 Monolithically integrated vertical jfet and schottky diode
05/09/2013US20130112983 Pixel structure and manufacturing method thereof
05/09/2013US20130112982 Method for forming nanofin transistors
05/09/2013US20130112981 Semiconductor Device, and Method of Forming the Same
05/09/2013US20130112980 Light-emitting device and method of manufacturing the same
05/09/2013US20130112978 Wiring structure, thin film transistor array substrate including the same, and display device
05/09/2013US20130112976 Thin-film transistor array substrate, organic light-emitting display including the same, and method of manufacturing the same
05/09/2013US20130112973 Precursor composition and method for forming amorphous conductive oxide film
05/09/2013US20130112972 Thin-film transistor
05/09/2013US20130112971 Composite oxide sintered body and sputtering target comprising same
05/09/2013US20130112970 Thin film transistor substrate and fabrication method for the same
05/09/2013US20130112969 Method of manufacturing p-type zno nanowires and method of manufacturing energy conversion device
05/09/2013US20130112968 Semiconductor device
05/09/2013US20130112967 Field-effect transistor with a dielectric layer having therein denatured albumen
05/09/2013US20130112940 Semiconductor structure having nanocrystalline core and nanocrystalline shell
05/09/2013US20130112939 New iii-nitride growth method on silicon substrate
05/09/2013US20130112938 Nanowire Field Effect Transistor Device
05/09/2013US20130112937 Nanowire Field Effect Transistor Device
05/09/2013US20130112274 Technique for fabrication of thin solar cells
05/09/2013US20130112260 Method for preparing an n+pp+ or p+nn+ structure on silicon wafers
05/09/2013US20130112251 Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
05/09/2013US20130111992 Proof mass positioning features having tangential contact surfaces
05/09/2013US20130111977 Chemical Sensor
05/08/2013EP2590221A1 Finfet devices
05/08/2013EP2589085A1 Thin film transistors
05/08/2013EP2589084A2 Transistor circuits for detection and measurement of chemical reactions and compounds
05/08/2013EP2589083A1 Bipolar junction transistor guard ring structures and method of fabricating thereof
05/08/2013EP2589082A1 Electronic devices with yielding substrates
05/08/2013EP2589070A2 Ultrahigh density vertical nand memory device and method of making thereof
05/08/2013EP2589065A1 Chemically sensitive sensor with lightly doped drains
05/08/2013EP2588851A1 Ion-sensing charge-accumulation circuits and methods
05/08/2013DE19934758B4 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
05/08/2013DE112010004241T5 Halbleiterbauelement und Verfahren zur Herstellung des Halbleiterbauelements A semiconductor device and method of manufacturing the semiconductor device
05/08/2013DE102012110603A1 Verfahren zum Trennen von Halbleiter-Dies mittels einer Materialmodifikation A method for separating semiconductor die using a material modification
05/08/2013DE102012108092A1 Verfahren zum Herstellen einer Halbleitervorrichtung unter Verwendung der Stress-Memorization-Technologie A method of manufacturing a semiconductor device using the stress-Memorization technology
05/08/2013DE102011088584B4 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
05/08/2013DE102011076695B4 Transistoren mit eingebettetem verformungsinduzierenden Material, das in durch einen Oxidationsätzprozess erzeugten Aussparungen ausgebildet ist Transistors with embedded strain-inducing material that is formed in cavities created by a Oxidationsätzprozess
05/08/2013DE102010042971B4 Transistorbauelement mit einer Feldelektrode Transistor device having a field electrode
05/08/2013DE102004048688B4 Leistungs-Halbleitervorrichtung Power semiconductor device
05/08/2013CN202930391U HITACHI-series automobile rectifier bridge diode
05/08/2013CN202930390U MOS (Metal Oxide Semiconductor) tube and battery protective circuit using MOS tube
05/08/2013CN202930389U FINFET and inverter using same
05/08/2013CN202930388U Electric charge compensating semiconductor device
05/08/2013CN202930361U Semiconductor device
05/08/2013CN103098221A Semiconductor devices with 2DEG and 2DHG
05/08/2013CN103098220A Wiring structure and display device
05/08/2013CN103098219A Super junction trench power MOSEFT device fabrication
05/08/2013CN103098218A Method and system for depositing a thin-film transistor
05/08/2013CN103098217A LED package with efficient, isolated thermal path
05/08/2013CN103098216A Substrate with buffer layer for oriented nanowire growth
05/08/2013CN103098210A Low impedance transmission line
05/08/2013CN103098200A Transistor having replacement metal gate and process for fabricating the same
05/08/2013CN103098198A 半导体装置 Semiconductor device
05/08/2013CN103098189A 半导体装置 Semiconductor device
05/08/2013CN103098188A Semiconductor substrate and insulated-gate field effect transistor
05/08/2013CN103098187A Silicon oxynitride film and method for forming same, and semiconductor device
05/08/2013CN103098186A Method of fabrication of semiconductor device
05/08/2013CN103098185A Methods for forming a hydrogen free silicon containing dielectric film
05/08/2013CN103094443A Pattern growth substrate
05/08/2013CN103094362A 3D Capacitor And Method Of Manufacturing Same
05/08/2013CN103094361A PIS capacitor in a silicon germanium heterojunction bipolar transistor (HBT) process and manufacturing method thereof
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