| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 01/15/2014 | EP2685505A1 Thin-film transistor, manufacturing method therefor, and display device |
| 01/15/2014 | EP2685504A1 Tunnel-effect transistor |
| 01/15/2014 | EP2685502A1 SOI integrated circuit comprising a bipolar transistor with insulating trenches of different depths |
| 01/15/2014 | EP2685501A1 SOI integrated circuit comprising an underlying protection transistor |
| 01/15/2014 | EP2685499A1 SOI integrated circuit comprising a triac for protection against electrostatic discharges |
| 01/15/2014 | EP2685497A1 SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges |
| 01/15/2014 | EP2685489A1 Device for estimating and simulating shape worked by plasma process, and simulation method and program |
| 01/15/2014 | EP2685488A1 Production method for semiconductor device |
| 01/15/2014 | EP2685251A2 Field-effect transistor, single-electron transistor and sensor using the same |
| 01/15/2014 | EP2684217A1 Semiconductor element |
| 01/15/2014 | EP2684216A2 Insulated-gate bipolar transistor |
| 01/15/2014 | CN203398119U 半导体器件 Semiconductor devices |
| 01/15/2014 | CN203398118U 半导体器件和集成降压转换器 Semiconductor devices and integrated buck converter |
| 01/15/2014 | CN103518263A Thin-film transistor |
| 01/15/2014 | CN103518254A Semiconductor device production method and semiconductor device |
| 01/15/2014 | CN103518253A Local interconnect structure self-aligned to gate structure |
| 01/15/2014 | CN103518252A Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device |
| 01/15/2014 | CN103518003A In2O3-ZnO sputtering target |
| 01/15/2014 | CN103515940A Transient voltage suppressor circuit, and diode element used in transient voltage suppressor circuit and manufacturing method of diode element |
| 01/15/2014 | CN103515453A Metal-oxide-metal capacitor |
| 01/15/2014 | CN103515452A Power rectification device, manufacturing method thereof and related semiconductor product |
| 01/15/2014 | CN103515451A Double-recessed trench Schottky barrier device |
| 01/15/2014 | CN103515450A Groove charge compensation Schottky semiconductor device and manufacturing method thereof |
| 01/15/2014 | CN103515449A Schottky semiconductor device with charge compensation groove and preparing method thereof |
| 01/15/2014 | CN103515448A Electrical device and method for manufacturing same |
| 01/15/2014 | CN103515447A Electronic device and method of manufacturing such device |
| 01/15/2014 | CN103515446A Semiconductor device and fabrication method thereof |
| 01/15/2014 | CN103515445A Thin film transistor and preparation method thereof |
| 01/15/2014 | CN103515444A Groove gate power MOS device |
| 01/15/2014 | CN103515443A Super-junction power device and manufacturing method thereof |
| 01/15/2014 | CN103515442A Single poly MOSFET device integrated with snubber |
| 01/15/2014 | CN103515441A Semiconductor device having embedded strain-inducing pattern |
| 01/15/2014 | CN103515440A Dummy gate electrode of semiconductor device |
| 01/15/2014 | CN103515439A Trench MOSFET (metal oxide semiconductor field-effect transistor) |
| 01/15/2014 | CN103515438A Semiconductor device |
| 01/15/2014 | CN103515437A Structure and method for a field effect transistor |
| 01/15/2014 | CN103515436A Super junction power device and manufacturing method thereof |
| 01/15/2014 | CN103515435A MOS transistor and formation method thereof, and SRAM memory cell circuit |
| 01/15/2014 | CN103515434A MOS transistor and formation method thereof, and SRAM memory cell circuit |
| 01/15/2014 | CN103515433A NMOS transistor and formation method thereof, and SRAM memory cell circuit |
| 01/15/2014 | CN103515432A P-type super node lateral double diffusion MOSFET device |
| 01/15/2014 | CN103515431A Double diffusion drain metal oxide semiconductor element and manufacturing method thereof |
| 01/15/2014 | CN103515430A 鳍式场效应晶体管及其制造方法 Fin field effect transistor and manufacturing method thereof |
| 01/15/2014 | CN103515429A Compound semiconductor device and method for manufacturing the same |
| 01/15/2014 | CN103515428A PSOI transverse high-voltage power semiconductor device |
| 01/15/2014 | CN103515427A 反向导通igbt Reverse conduction igbt |
| 01/15/2014 | CN103515426A Spin transistor based on multiferroic or ferroelectric material |
| 01/15/2014 | CN103515425A Semiconductor device, transistor and integrated circuit device |
| 01/15/2014 | CN103515424A Semiconductor device and fabricating method thereof |
| 01/15/2014 | CN103515423A Semiconductor devices, transistors and methods of manufacture thereof |
| 01/15/2014 | CN103515422A FinFET with high mobility and strain channel |
| 01/15/2014 | CN103515421A Semiconductor structure and manufacturing process thereof |
| 01/15/2014 | CN103515420A Semiconductor device and formation method thereof |
| 01/15/2014 | CN103515419A Graded aluminum-gallium-nitride and superlattice buffer layer for III-V nitride layer on silicon substrate |
| 01/15/2014 | CN103515418A High inverse-voltage punch through type GPP rectification chip and process |
| 01/15/2014 | CN103515417A Passivation scheme |
| 01/15/2014 | CN103515416A Chip structure and manufacturing method thereof |
| 01/15/2014 | CN103515415A Lamination structure and manufacturing method thereof, and electronic device containing lamination structure |
| 01/15/2014 | CN103515414A 晶体管装置及其制造方法 Transistor device and manufacturing method |
| 01/15/2014 | CN103515395A Display device and manufacturing method for same |
| 01/15/2014 | CN103515394A Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same |
| 01/15/2014 | CN103515390A Integrated circuit having FINFETs with different fin profiles |
| 01/15/2014 | CN103515383A Integrated power semiconductor component, production method and chopper circuit |
| 01/15/2014 | CN103515373A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/15/2014 | CN103515365A Large power crimping type IGBT device |
| 01/15/2014 | CN103515282A Fin field-effect transistor and forming method thereof |
| 01/15/2014 | CN103515245A Channel voltage dividing field effect tube and production method based on high-energy ion implantation mode |
| 01/15/2014 | CN103515244A Replacement metal gate processing with reduced interlevel dielectric layer etch rate |
| 01/15/2014 | CN103515243A Transistor with recess gate and method for fabricating the same |
| 01/15/2014 | CN103515242A Power transistor and manufacturing method thereof |
| 01/15/2014 | CN103515240A Transverse diffusion field effect transistor structure and manufacturing method |
| 01/15/2014 | CN103515239A Method for manufacturing ultra-thin SOI semiconductor device and ultra-thin SOI semiconductor device |
| 01/15/2014 | CN103515238A NMOS transistor and formation method, CMOS structure and formation method thereof |
| 01/15/2014 | CN103515233A Semiconductor device and method of manufacturing the same |
| 01/15/2014 | CN103515232A Semiconductor structure and manufacturing method thereof |
| 01/15/2014 | CN103515231A FinFET manufacturing method |
| 01/15/2014 | CN103515230A Semiconductor structure and formation method thereof |
| 01/15/2014 | CN103515229A Method for forming fin portion and fin field effect transistor |
| 01/15/2014 | CN103515227A Method of manufacturing a semiconductor device and a semiconductor device |
| 01/15/2014 | CN103515226A Buried polycrystal stripe inner transparent collector region insulated gate bipolar transistor and manufacturing method |
| 01/15/2014 | CN103515225A Method for manufacturing a diode, and a diode |
| 01/15/2014 | CN103515210A Gate-last process transistor and forming method thereof |
| 01/15/2014 | CN103515209A Fin field effect transistor and formation method thereof |
| 01/15/2014 | CN103515207A Oxide layer, interface layer in HKMG structure, MOS transistor formation method and MOS transistor |
| 01/15/2014 | CN103515202A Semiconductor device and method of manufacturing semiconductor device |
| 01/15/2014 | CN103515201A Method and epitaxial product for forming compound epitaxial layer through chemical bonding |
| 01/15/2014 | CN103515191A 半导体结构及其形成方法 And method of forming a semiconductor structure |
| 01/15/2014 | CN103510086A Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof |
| 01/15/2014 | CN103510056A Zinc oxide-based sputtering target, method of fabricating thereof and thin film transistor |
| 01/15/2014 | CN102544114B Accumulation type grooved-gate diode |
| 01/15/2014 | CN102544068B Bidirectional controllable silicon device based on assistant triggering of PNP-type triodes |
| 01/15/2014 | CN102437191B Low grid-drain capacitance grooved metal oxide silicon (MOS) device and manufacturing method thereof |
| 01/15/2014 | CN102315171B Integrated circuit device and method of manufacturing same |
| 01/15/2014 | CN102214678B 3D-RESURF junction terminal structure of power semiconductor |
| 01/15/2014 | CN102201344B Gate metal routing for transistor with checkerboarded layout |
| 01/15/2014 | CN102171829B Multi-layer reconfigurable switches |
| 01/15/2014 | CN101847605B Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices |
| 01/15/2014 | CN101714550B Recessed channel array transistors, and semiconductor devices including a recessed channel array transistor |
| 01/14/2014 | US8630807 Methods for the electronic, homogeneous assembly and fabrication of devices |
| 01/14/2014 | US8629865 Organic light-emitting device with adjustable charge carrier injection |