Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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08/05/2003 | US6602774 Selective salicidation process for electronic devices integrated in a semiconductor substrate |
08/05/2003 | US6602771 Method for fabricating semiconductor device |
08/05/2003 | US6602769 Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same |
08/05/2003 | US6602768 MOS-gated power device with doped polysilicon body and process for forming same |
08/05/2003 | US6602765 Fabrication method of thin-film semiconductor device |
08/05/2003 | US6602764 Methods of fabricating gallium nitride microelectronic layers on silicon layers |
08/05/2003 | US6602761 Process for production of SOI substrate and process for production of semiconductor device |
08/05/2003 | US6602758 Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing |
08/05/2003 | US6602755 Method for manufacturing a compact bipolar transistor structure |
08/05/2003 | US6602753 Semiconductor device having a gate insulating film comprising a metal oxide and method of manufacturing the same |
08/05/2003 | US6602750 Container structure for floating gate memory device and method for forming same |
08/05/2003 | US6602745 Field effect transistor and method of fabrication |
08/05/2003 | US6602744 Process for fabricating thin film semiconductor device |
08/05/2003 | US6602720 Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same |
08/05/2003 | US6601431 Acceleration sensor |
07/31/2003 | WO2003063255A1 Fabrication method, varactor, and integrated circuit |
07/31/2003 | WO2003063254A1 Semiconductor device |
07/31/2003 | WO2003063253A1 Hetero-bipolar transistor |
07/31/2003 | WO2003063252A1 Bipolar transistor comprising a low-resistance base terminal |
07/31/2003 | WO2003063251A1 Automatically passivated n-p junction and a method for making it |
07/31/2003 | WO2003063250A1 Programmable memory address and decode circuits with ultra thin vertical body transistors |
07/31/2003 | WO2003063249A1 Magnetic storage apparatus and manufacturing method thereof |
07/31/2003 | WO2003063243A1 Thin films, structures having thin films, and methods of forming thin films |
07/31/2003 | WO2003063236A1 Semiconductor device with co-packaged die |
07/31/2003 | WO2003063235A1 Eliminating substrate noise by an electrically isolated high-voltage i/o transistor |
07/31/2003 | WO2003063230A1 Ion-implantation and shallow etching to produce effective edge termination in high-voltage heterojunction bipolar transistors |
07/31/2003 | WO2003063229A1 METHOD OF CREATING HIGH-QUALITY RELAXED SiGe-ON-INSULATOR FOR STRAINED Si CMOS APPLICATIONS |
07/31/2003 | WO2003063226A2 Oxide layer on a gaas-based semiconductor structure and method of forming the same |
07/31/2003 | WO2003063224A1 An arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement |
07/31/2003 | WO2003063220A1 Method and device for processing substrate, and apparatus for manufacturing semiconductor device |
07/31/2003 | WO2003063215A1 Nitride semiconductor device manufacturing method |
07/31/2003 | WO2003063204A2 Igbt having thick buffer region |
07/31/2003 | WO2003063202A2 Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate |
07/31/2003 | WO2003063167A2 System and method for programming ono dual bit memory cells |
07/31/2003 | WO2003041176A3 A scalable flash eeprom memory cell with floating gate spacer wrapped by control gate, and method of manufacturing the same |
07/31/2003 | WO2003021639A3 Trench fet with self aligned source and contact |
07/31/2003 | WO2002103760A3 Method of selective removal of sige alloys |
07/31/2003 | WO2002095835A3 Vertical metal oxide semiconductor field-effect diodes |
07/31/2003 | WO2002056045A3 Device for sensing a magnetic field, a magnetic field meter and an ammeter |
07/31/2003 | US20030143864 Fabrication process of a semiconductor integrated circuit device |
07/31/2003 | US20030143863 Process for oxide fabrication using oxidation steps below and above a threshold temperature |
07/31/2003 | US20030143844 Method of producing semiconductor element and nonvolatile semiconductor memory produced by this method |
07/31/2003 | US20030143836 Power semicondutor component and method for producing the same |
07/31/2003 | US20030143826 Method of manufacturing semiconductor device |
07/31/2003 | US20030143825 Semiconductor device and method of manufacturing the same |
07/31/2003 | US20030143822 Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system |
07/31/2003 | US20030143815 Semiconductor device and method of fabricating the same |
07/31/2003 | US20030143814 Methods of forming field effect transistors including floating gate field effect transistors |
07/31/2003 | US20030143812 Reduction of negative bias temperature instability in narrow width PMOS using F2 implanation |
07/31/2003 | US20030143811 Method for radiation hardening N-channel MOS transistors |
07/31/2003 | US20030143810 Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same |
07/31/2003 | US20030143798 Method for manufacturing horizontal surrounding gate flash memory cell |
07/31/2003 | US20030143794 Production method for semiconductor device |
07/31/2003 | US20030143792 Twin MONOS cell fabrication method and array organization |
07/31/2003 | US20030143791 Methods for fabricating MOS transistors with notched gate electrodes |
07/31/2003 | US20030143787 Method of forming channel in thin film transistor using non-ionic excited species |
07/31/2003 | US20030143786 Method of making an integrated photodetector |
07/31/2003 | US20030143785 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
07/31/2003 | US20030143774 Optical semiconductor integrated circuit device and manufacturing method for the same |
07/31/2003 | US20030143770 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
07/31/2003 | US20030143377 Display apparatus having a light shielding layer |
07/31/2003 | US20030143375 Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof |
07/31/2003 | US20030142550 Semiconductor device |
07/31/2003 | US20030142539 Spin switch and magnetic storage element using it |
07/31/2003 | US20030142533 Semiconductor device and method for driving the same |
07/31/2003 | US20030142260 Liquid crystal display device and method for manufacturing the same |
07/31/2003 | US20030142259 Lateral electric field liquid crystal display device |
07/31/2003 | US20030141807 Display device |
07/31/2003 | US20030141599 A structure for forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit |
07/31/2003 | US20030141571 Semiconductor device and manufacturing method thereof |
07/31/2003 | US20030141569 Fin-type resistors |
07/31/2003 | US20030141565 Diode |
07/31/2003 | US20030141562 Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same |
07/31/2003 | US20030141561 Method for producing a micromechanical component, and a component produced according to said method |
07/31/2003 | US20030141560 Forming gate dielectric layer over a substrate; forming a silicon nitride barrier layer by reacting tetrachlorosilane with ammonia through a chemical vapor deposition, whereby the silicon nitride barrier layer blocks diffusion of impurities |
07/31/2003 | US20030141559 Efficiency |
07/31/2003 | US20030141558 Semiconductor integrated circuit device and a method of manufacturing thereof |
07/31/2003 | US20030141557 Method for manufacturing semiconductor integrated circuit device |
07/31/2003 | US20030141555 Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact window |
07/31/2003 | US20030141554 Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof |
07/31/2003 | US20030141553 Field effect transistor formed on SOI substrate |
07/31/2003 | US20030141551 Having T-shaped gate structure; efficiency |
07/31/2003 | US20030141550 Transistor with reduced short channel effects and method |
07/31/2003 | US20030141549 Efficiency |
07/31/2003 | US20030141546 MOS semiconductor device and method of manufacturing the same |
07/31/2003 | US20030141545 Semiconductor device |
07/31/2003 | US20030141543 Body contact mosfet |
07/31/2003 | US20030141542 Insulated gate semiconductor device and method of manufacturing the same |
07/31/2003 | US20030141541 Dual-bit flash memory cells for forming high-density memory arrays |
07/31/2003 | US20030141540 Nonvolatile semiconductor memory device and method for fabricating the same |
07/31/2003 | US20030141539 Self aligned method of forming a semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges, and a memory array made thereby |
07/31/2003 | US20030141538 Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacture method of the device |
07/31/2003 | US20030141537 System for multiple input floating gate structures |
07/31/2003 | US20030141536 Integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source |
07/31/2003 | US20030141534 Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers |
07/31/2003 | US20030141532 Non-volatile semiconductor memory device of which bit line withstand voltage can be increased |
07/31/2003 | US20030141525 Forming a transistor body on a substrate; implanting a source at first end and implanting a drain at secon end of transistor body; forming gate structures adjacent the transistor body vertical edge |
07/31/2003 | US20030141524 Organic semiconductor device and method |
07/31/2003 | US20030141522 Method of isolating the current sense on power devices while maintaining a continuous stripe cell |
07/31/2003 | US20030141521 Semiconductor device and method of manufacturing the same |