Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2003
08/07/2003US20030148568 Flash memory device and fabrication process thereof, method of forming a dielectric film
08/07/2003US20030148567 Poly-silicon thin film transistor having back bias effects and fabrication method thereof
08/07/2003US20030148565 Method for forming thin semiconductor film, method for fabricating semiconductor device, system for executing these methods and electrooptic device
08/07/2003US20030148564 Method for suppressing short channel effect of a semiconductor device
08/07/2003US20030148563 Transistor, semiconductor device and manufacturing method of semiconductor device
08/07/2003US20030148562 Field effect transistor
08/07/2003US20030148561 Semiconductor device and manufacturing method thereof
08/07/2003US20030148560 Thin film transistors and method of manufacture
08/07/2003US20030148559 Semiconductor device and the method of manufacturing the same
08/07/2003US20030148557 BOC BGA package for die with I-shaped bond pad layout
08/07/2003US20030148555 Method of manufacturing cof package
08/07/2003US20030148086 Controlled growth of single-wall carbon nanotubes
08/07/2003US20030147278 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
08/07/2003US20030147021 Liquid crystal display device
08/07/2003US20030147020 Liquid crystal display units
08/07/2003US20030147019 Flat panel display and method of manufacturing the same
08/07/2003US20030147018 Display apparatus having polycrystalline semiconductor layer
08/07/2003US20030146992 Solid-state image pickup device and electronic information apparatus
08/07/2003US20030146518 Semiconductor device of chip-on-chip structure, assembling process therefor, and semiconductor chip to be bonded to solid surface
08/07/2003US20030146494 Silicon germanium CMOS channel
08/07/2003US20030146493 Semiconductor device
08/07/2003US20030146484 SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
08/07/2003US20030146480 Forming electrode on semiconductor substrate; then intake, drain zones; overcoating with cobalt silicide
08/07/2003US20030146479 MOSFET gate electrodes having performance tuned work functions and methods of making same
08/07/2003US20030146478 MOS device with dual gate insulators and method of forming the same
08/07/2003US20030146473 Semiconductor device
08/07/2003US20030146472 Optimized gate implants for reducing dopant effects during gate etching
08/07/2003US20030146471 Charge coupled device and production thereof
08/07/2003US20030146470 Trenched semiconductor devices and their manufacture
08/07/2003US20030146467 One time programmable semiconductor nonvolatile memory device and method for production of same
08/07/2003US20030146466 Floating gate for memory and manufacturing method thereof
08/07/2003US20030146458 Semiconductor device and process for forming same
08/07/2003US20030146457 Gate electrode and method of fabricating the same
08/07/2003US20030146455 Methods of forming memory cells and arrays having underlying source-line connections
08/07/2003US20030146454 Semiconductor integrated circuit and method of manufacturing of semiconductor integrated circuit
08/07/2003US20030146449 Concentration gradient; germanium silicide; suppress diffusion; heterojunction bipolar transistors
08/07/2003US20030146448 Band gap compensated HBT
08/07/2003US20030146444 Group III-V compound semiconductor and group III-V compound semiconductor device using the same
08/07/2003US20030146437 Method for contacting a semiconductor configuration
08/07/2003US20030146433 Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
08/07/2003US20030146428 Silicon-germanium mosfet with deposited gate dielectric and metal gate electrode and method for making the same
08/07/2003US20030146095 Methods for the electronic, Homogeneous assembly and fabrication of devices
08/07/2003US20030145784 Cubic (zinc-blende) aluminum nitride and method of making same
08/07/2003CA2754097A1 Nitride semiconductor device having support substrate and its manufacturing method
08/07/2003CA2474556A1 Enhanced photodetector
08/06/2003EP1333508A2 Method of manufacturing a carbon nanotube device and carbon nanotube device
08/06/2003EP1333501A2 Multi-terminal MOS varactor
08/06/2003EP1333497A2 Circuit substrate, electro-optical device and electronic appliances
08/06/2003EP1333479A1 Channel write/erase flash memory cell and its manufacturing method
08/06/2003EP1333478A1 Method for manufacturing gallium nitride compound semiconductor element and gallium nitride compound semiconductor element
08/06/2003EP1333475A1 Method for manufacturing semiconductor device, substrate treater, and substrate treatment system
08/06/2003EP1333473A1 Interpoly dielectric manufacturing process for non volatile semiconductor memories
08/06/2003EP1332519A2 Tft matrix for optical sensor comprising a photosensitive semiconductor layer, and optical sensor comprising such an active matrix
08/06/2003EP1074047A4 Method for fabricating an electrically addressable silicon-on-sapphire light valve
08/06/2003EP1068636A4 Ultra-high resolution liquid crystal display on silicon-on-sapphire
08/06/2003EP0882289B1 Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
08/06/2003EP0815586B1 Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same
08/06/2003CN1434983A Halo-free non-rectifying contact on chip with halo source/drain diffusion
08/06/2003CN1434982A Nonvolatile memory and method of driving monvolatile memory
08/06/2003CN1434979A MDSFEET device system and method
08/06/2003CN1434519A Multi-terminal MOS varactor
08/06/2003CN1434516A Ferroelectric semiconductor memory
08/06/2003CN1434515A Semiconductor memory device using vertical-channel transistors
08/06/2003CN1434513A Programmable gate array based on transistor grid oxidation layr breakdown property
08/06/2003CN1434483A Semiconductor device and making method thereof
08/06/2003CN1434480A 电子器件 Electronic devices
08/06/2003CN1434374A 半导体装置 Semiconductor device
08/06/2003CN1434349A Photo-mechanical characteristic making containing micrometer and submicrometer characteristic for semiconductor device
08/06/2003CN1434338A Active-matrix addressing LCD device using laterial electric field
08/06/2003CN1434337A Reflection electrooptical device and electronic equipment
08/06/2003CN1117399C Semiconductor quantum oscillator device and method for producing Bloch oscillation in device
08/06/2003CN1117398C Three-layer polycrystal silicon inserted non-volatile memory unit and manufacture method thereof
08/06/2003CN1117393C Active matrix displays and method of making
08/05/2003US6604066 Method and apparatus for calculating delay for logic circuit and method of calculating delay data for delay library
08/05/2003US6603518 Liquid crystal display capable of reducing amount of return light to TFT and manufacturing method therefor
08/05/2003US6603455 Display panel drive circuit and display panel
08/05/2003US6603453 Semiconductor device and method for manufacturing the same
08/05/2003US6603198 Semiconductor structure having stacked semiconductor devices
08/05/2003US6603189 Improving a reverse recovery characteristic of a semiconductor device which solves a technical problem of breakdown voltage reduction which has conventionally caused in enhancing soft recover. To solve the technical problem, in a PN junction
08/05/2003US6603188 Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor
08/05/2003US6603186 Bipolar transistor with base drive circuit protection
08/05/2003US6603185 Voltage withstanding structure for a semiconductor device
08/05/2003US6603181 MOS device having a passivated semiconductor-dielectric interface
08/05/2003US6603180 Semiconductor device having large-area silicide layer and process of fabrication thereof
08/05/2003US6603176 Power semiconductor device for power integrated circuit device
08/05/2003US6603175 Operating circuit with voltage regular circuit having at least a partially depleted soi field effect transistor
08/05/2003US6603174 An Silicon on Insulator substrate comprises a buried oxide film, an SOI layer formed on a first region of the surface of the buried oxide film, and a silicon oxide film (8) formed on a second region (52) of the surface. Formed on the surface
08/05/2003US6603173 Vertical type MOSFET
08/05/2003US6603160 MOS capacitor, liquid crystal display, integrated circuit and method of manufacture thereof
08/05/2003US6603159 System and methods for manufacturing and using a mask
08/05/2003US6603156 Strained silicon on insulator structures
08/05/2003US6603155 Overvoltage protection device
08/05/2003US6603153 Fast recovery diode and method for its manufacture
08/05/2003US6603143 Semiconductor device and method for fabricating same
08/05/2003US6603141 Organic semiconductor and method
08/05/2003US6603139 Polymer devices
08/05/2003US6602808 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
08/05/2003US6602805 Method for forming gate dielectric layer in NROM
08/05/2003US6602786 One-step process for forming titanium silicide layer on polysilicon
08/05/2003US6602781 Metal silicide gate transistors
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