Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2015
02/19/2015US20150048416 Silicon controlled rectifiers (scr), methods of manufacture and design structures
02/19/2015US20150048414 Igbt device with buried emitter regions
02/19/2015US20150048413 Semiconductor device
02/19/2015US20150048384 Semiconductor device
02/19/2015US20150048383 Silicon carbide semiconductor element and fabrication method thereof
02/19/2015US20150048382 Silicon carbide semiconductor device and method for manufacturing the same
02/19/2015US20150048381 Method for the reuse of gallium nitride epitaxial substrates
02/19/2015US20150048377 Semiconductor device, and manufacturing method for same
02/19/2015US20150048375 Method of manufacturing stretchable substrate and stretchable substrate manufactured using the method
02/19/2015US20150048372 Transistor, method of manufacturing the transistor, semiconductor unit, method of manufacturing the semiconductor unit, display, and electronic apparatus
02/19/2015US20150048371 Method for manufacturing semiconductor device
02/19/2015US20150048369 Semiconductor device and electronic apparatus
02/19/2015US20150048368 Oxide semiconductor stacked film and semiconductor device
02/19/2015US20150048365 Semiconductor device
02/19/2015US20150048363 Semiconductor device and method for manufacturing the same
02/19/2015US20150048362 Semiconductor device
02/19/2015US20150048361 Display unit and electronic apparatus
02/19/2015US20150048359 Semiconductor device
02/19/2015US20150048358 Light-emitting device
02/19/2015US20150048313 Strip-shaped gate tunneling field effect transistor with double-diffusion and a preparation method thereof
02/19/2015US20150048312 Solution-assisted carbon nanotube placement with graphene electrodes
02/19/2015US20150048310 System and method for providing an electron blocking layer with doping control
02/19/2015US20150048301 Engineered substrates having mechanically weak structures and associated systems and methods
02/19/2015US20150048299 Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same
02/19/2015US20150048296 Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
02/19/2015US20150048295 Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
02/19/2015US20150048294 Variable resistive memory device including vertical channel pmos transistor and method of manufacturing the same
02/19/2015US20150048293 Three-dimensional semiconductor device, variable resistive memory device including the same, and method of manufacturing the same
02/19/2015US20150048292 Semiconductor device having vertical channel, resistive memory device including the same, and method of manufacturing the same
02/19/2015US20150048282 Transparent compound semiconductor and production method therefor
02/19/2015US20150048241 Sensor pixels, arrays and array systems and methods therefor
02/19/2015DE112013002558T5 Halbleiterbauelement Semiconductor device
02/19/2015DE112013002538T5 Halbleiterbauelement Semiconductor device
02/19/2015DE112013002516T5 Halbleitervorrichtung Semiconductor device
02/19/2015DE112013002514T5 Sensorvorrichtung Sensor device
02/19/2015DE112013002217T5 IGBT (Insulated Gate Bipolar Transistor - Bipolartransistor mit isoliertem Gate) mit hoher Emitter-Gate-Kapazität IGBT (Insulated Gate Bipolar Transistor - insulated gate bipolar transistor) of high emitter-gate capacitance
02/19/2015DE102014111279A1 Halbleiterchip mit integrierten Serienwiderständen Semiconductor chip with integrated series resistors
02/19/2015DE102013216195A1 Verfahren zur Nachdotierung einer Halbleiterscheibe A method for subsequent doping of a semiconductor wafer
02/19/2015DE102013214436A1 Verfahren zum Bilden einer Halbleiterstruktur, die silizidierte und nicht silizidierte Schaltkreiselemente umfaßt A method of forming a semiconductor structure, the silicided and non-silicided circuit elements comprises
02/19/2015DE102013104015B4 Verfahren für die Ausbildung eines Halbleiterbauteils A method for forming a semiconductor device
02/18/2015EP2838118A1 Electronic device, method for manufacturing same, and image display device
02/18/2015EP2838112A1 Etching method
02/18/2015EP2837633A1 Phthalocyanine nano-size structures, and electronic elements using said nano-size structures
02/18/2015EP2837035A2 Methods of nanowire functionalization, dispersion and attachment
02/18/2015EP2837034A1 3d non-volatile storage with additional word line select gates
02/18/2015EP2837033A1 Thin film transistor
02/17/2015US8958468 System and method for canceling radio frequency interferers (RFI's) in xDSL signals
02/17/2015US8958246 Vertically foldable memory array structure
02/17/2015US8958245 Logic-based multiple time programming memory cell compatible with generic CMOS processes
02/17/2015US8958239 Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit
02/17/2015US8957737 Methods and systems for generating millimeter-wave oscillations
02/17/2015US8957529 Power voltage supply apparatus for three dimensional semiconductor
02/17/2015US8957528 Method and apparatus for reduced parasitics and improved multi-finger transistor thermal impedance
02/17/2015US8957526 Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages
02/17/2015US8957521 Mounted structure
02/17/2015US8957520 Microelectronic assembly comprising dielectric structures with different young modulus and having reduced mechanical stresses between the device terminals and external contacts
02/17/2015US8957505 Device substrate and fabrication method thereof
02/17/2015US8957504 Integrated structure with a silicon-through via
02/17/2015US8957502 Semiconductor device
02/17/2015US8957499 Laminate stacked capacitor, circuit substrate with laminate stacked capacitor and semiconductor apparatus with laminate stacked capacitor
02/17/2015US8957494 High-voltage Schottky diode and manufacturing method thereof
02/17/2015US8957493 Semiconductor device
02/17/2015US8957487 Tunneling magneto-resistor reference unit and magnetic field sensing circuit using the same
02/17/2015US8957486 Magnetic memory
02/17/2015US8957485 Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme
02/17/2015US8957483 Electrically conductive lines and integrated circuitry comprising a line of recessed access devices
02/17/2015US8957482 Electrical fuse and related applications
02/17/2015US8957481 Semiconductor structure and method for manufacturing the same
02/17/2015US8957480 Semiconductor device including dummy transistors with reduced off-leakage current
02/17/2015US8957479 Formation of multi-height MUGFET
02/17/2015US8957478 Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
02/17/2015US8957477 Germanium FinFETs having dielectric punch-through stoppers
02/17/2015US8957475 Bootstrap field effect transistor (FET)
02/17/2015US8957474 MOS transistors including U shaped channels regions with separated protruding portions
02/17/2015US8957473 MOS-gated power devices, methods, and integrated circuits
02/17/2015US8957472 Memory device having trapezoidal bitlines and method of fabricating same
02/17/2015US8957471 Semiconductor memory device and method for manufacturing same
02/17/2015US8957470 Integration of memory, high voltage and logic devices
02/17/2015US8957468 Variable capacitor and liquid crystal display device
02/17/2015US8957466 Semiconductor device
02/17/2015US8957465 Formation of the dielectric cap layer for a replacement gate structure
02/17/2015US8957464 Transistors with uniaxial stress channels
02/17/2015US8957463 Gate tunable tunnel diode
02/17/2015US8957462 Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
02/17/2015US8957461 Schottky barrier diode having a trench structure
02/17/2015US8957458 Asymmetric semiconductor memory device having electrically floating body transistor
02/17/2015US8957456 Heterojunction bipolar transistors with reduced parasitic capacitance
02/17/2015US8957455 Modulation doped super-lattice base for heterojunction bipolar transistors
02/17/2015US8957454 III-Nitride semiconductor structures with strain absorbing interlayer transition modules
02/17/2015US8957453 Method of manufacturing a semiconductor device and semiconductor device
02/17/2015US8957449 Method for manufacturing nano-imprint mould, method for manufacturing light-emitting diode using the nano imprint mould manufactured thereby, and light-emitting diode manufactured thereby
02/17/2015US8957440 Light emitting devices with low packaging factor
02/17/2015US8957432 Semiconductor device
02/17/2015US8957430 Gel underfill layers for light emitting diodes
02/17/2015US8957429 Light emitting diode with wavelength conversion layer
02/17/2015US8957428 Coated light emitting device and method for coating thereof
02/17/2015US8957426 Laminate substrate and method of fabricating the same
02/17/2015US8957425 Semiconductor device and method for manufacturing semiconductor device
02/17/2015US8957424 Electroluminescence display device
02/17/2015US8957423 Semiconductor device
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 ... 2182