Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2015
02/26/2015US20150053985 Micromachine and method for manufacturing the same
02/26/2015US20150053984 Thin film transistor substrate and the method thereof
02/26/2015US20150053983 Systems and methods for dopant activation using pre-amorphization implantation and microwave radiation
02/26/2015US20150053982 Heterojunction bipolar transistors with reduced parasitic capacitance
02/26/2015US20150053981 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
02/26/2015US20150053978 Semiconductor Device
02/26/2015US20150053977 Semiconductor device and manufacturing method thereof
02/26/2015US20150053976 Display device and method for manufacturing the same
02/26/2015US20150053975 Semiconductor device
02/26/2015US20150053974 Thin film transistor and display array substrate using same
02/26/2015US20150053973 Capacitor and Semiconductor Device
02/26/2015US20150053972 Semiconductor device
02/26/2015US20150053971 Semiconductor device
02/26/2015US20150053969 Semiconductor device and method for manufacturing same
02/26/2015US20150053968 Semiconductor device, method for manufacturing semiconductor device, and display device
02/26/2015US20150053967 Oxide tft, preparation method thereof, array substrate, and display device
02/26/2015US20150053966 Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof
02/26/2015US20150053930 Atomic layer deposition of selected molecular clusters
02/26/2015US20150053929 Vertical iii-v nanowire field-effect transistor using nanosphere lithography
02/26/2015US20150053928 Silicon and silicon germanium nanowire formation
02/26/2015US20150053927 Stretchable transistors with buckled carbon nanotube films as conducting channels
02/26/2015US20150053926 Graphite and/or graphene semiconductor devices
02/26/2015US20150053925 Top-Down Fabrication Method for Forming a Nanowire Transistor Device
02/26/2015US20150053921 Enhanced switch device and manufacturing method therefor
02/26/2015US20150053913 Suspended nanowire structure
02/26/2015US20150053912 Integrate Circuit With Nanowires
02/26/2015US20150053263 Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer
02/26/2015US20150053259 P-type doping of ii-vi materials with rapid vapor deposition using radical nitrogen
02/26/2015DE112013002722T5 Adaptiver ladungsausgeglichener Randabschluss Adaptive charge balanced edge termination
02/26/2015DE112013002260T5 Aufbau einer integrierten Schaltung Construction of an integrated circuit
02/26/2015DE112013001927T5 Herstellungsverfahren für eine Siliziumcarbid-Halbleitervorrichtung Manufacturing method for a silicon carbide semiconductor device
02/26/2015DE112013001802T5 Hochspannungshalbleitervorrichtung High voltage semiconductor device
02/26/2015DE112012006543T5 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
02/26/2015DE112012006441T5 Bipolartransistor vom Isolierschichttyp Bipolar transistor Isolierschichttyp
02/26/2015DE10259035B4 ESD-Schutzbauelement und Schaltungsanordnung mit einem ESD-Schutzbauelement ESD protection device and circuit with an ESD protection device
02/26/2015DE10250830B4 Verfahren zum Herstellung eines Schaltkreis-Arrays A method of manufacturing a circuit array
02/26/2015DE102013112785B3 Verfahren zur Herstellung eines Verbundkörpers mit zumindest einer funktionellen Schicht oder zur weiteren Herstellung elektronischer oder opto-elektronischer Bauelemente A process for producing a composite body having at least one functional layer or to the further manufacture of electronic or opto-electronic components,
02/26/2015DE102013109635A1 Halbleiteranordnung und Verfahren, um dieselbe zu bilden To form the same semiconductor device and method
02/26/2015DE102004059971B4 Lasermaske und Kristallisationsverfahren unter Verwendung derselber sowie Display und Verfahren zu dessen Herstellung Laser mask and crystallization method using DERS Elber and display and process for its preparation
02/25/2015EP2840613A1 Heterojunction unipolar diode with low turn-on voltage
02/25/2015EP2840612A1 Semiconductor device
02/25/2015EP2840595A1 Method for manufacturing silicon carbide semiconductor device
02/25/2015EP2840594A2 Recrystallisation of blocks with source and drain by the top
02/25/2015EP2840592A1 Semiconductor device manufacturing method
02/25/2015EP2840372A1 Double-sided coated surface stress sensor
02/25/2015EP2839509A2 A metal-semiconductor-metal (msm) heterojunction diode
02/25/2015EP2839508A1 Device with graded barrier layer
02/25/2015EP2839270A1 A platform unit for combined sensing of pressure, temperature and humidity
02/24/2015US8964497 Bit line sense amplifier and layout method therefor
02/24/2015US8964491 Graphene-based memory devices and methods therefor
02/24/2015US8964475 Memory cell string based on gated-diode cell and memory array using the same
02/24/2015US8964473 Select gate materials having different work functions in non-volatile memory
02/24/2015US8964462 Nonvolatile memory device using a threshold voltage switching material and method for manufacturing same
02/24/2015US8964461 Techniques for providing a direct injection semiconductor memory device
02/24/2015US8964141 Thin film transistor, method of manufacturing the same, and display device having thin film transistor
02/24/2015US8963658 Micropstrip transmission line/coplanar waveguide (CPW) transistor structure
02/24/2015US8963544 Signal transmission device
02/24/2015US8963338 III-nitride transistor stacked with diode in a package
02/24/2015US8963337 Thin wafer support assembly
02/24/2015US8963336 Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
02/24/2015US8963331 Semiconductor constructions, semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers
02/24/2015US8963330 Circuit structures and electronic systems
02/24/2015US8963325 Power device and power device module
02/24/2015US8963315 Semiconductor device with surface electrodes
02/24/2015US8963297 Semiconductor apparatus
02/24/2015US8963296 Double trench rectifier
02/24/2015US8963295 Semiconductor structure with beryllium oxide
02/24/2015US8963294 Dense chevron finFET and method of manufacturing same
02/24/2015US8963293 High resistivity silicon-on-insulator substrate and method of forming
02/24/2015US8963292 Semiconductor device having backside redistribution layers and method for fabricating the same
02/24/2015US8963290 Semiconductor device and manufacturing method therefor
02/24/2015US8963289 Digital semiconductor variable capacitor
02/24/2015US8963288 ESD protection circuit
02/24/2015US8963285 Semiconductor device and method of manufacturing thereof
02/24/2015US8963284 Semiconductor devices having E-fuse structures and methods of fabricating the same
02/24/2015US8963283 Method of fabricating isolated capacitors and structure thereof
02/24/2015US8963282 Crack stop structure and method for forming the same
02/24/2015US8963281 Simultaneous isolation trench and handle wafer contact formation
02/24/2015US8963280 Semiconductor devices and methods of manufacture
02/24/2015US8963279 Semiconductor device isolation structures
02/24/2015US8963278 Three-dimensional integrated circuit device using a wafer scale membrane
02/24/2015US8963277 Semiconductor structure and method of manufacturing the same
02/24/2015US8963276 Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells
02/24/2015US8963274 Epitaxial structure for vertically integrated charge transfer gate technology in optoelectronic materials
02/24/2015US8963270 Fabrication of interconnected thin-film concentrator cells using shadow masks
02/24/2015US8963265 Graphene based quantum detector device
02/24/2015US8963264 Magnetic stack with orthogonal biasing layer
02/24/2015US8963262 Method and apparatus for forming MEMS device
02/24/2015US8963260 Power semiconductor device and fabrication method thereof
02/24/2015US8963259 Device isolation in finFET CMOS
02/24/2015US8963258 FinFET with bottom SiGe layer in source/drain
02/24/2015US8963257 Fin field effect transistors and methods for fabricating the same
02/24/2015US8963255 Strained silicon carbide channel for electron mobility of NMOS
02/24/2015US8963254 Simultaneous formation of FinFET and MUGFET
02/24/2015US8963251 Semiconductor device with strain technique
02/24/2015US8963249 Electronic device with controlled threshold voltage
02/24/2015US8963248 Semiconductor device having SSOI substrate with relaxed tensile stress
02/24/2015US8963246 Semiconductor device and method for manufacturing semiconductor device
02/24/2015US8963245 Integrated circuit having lateral compensation component
02/24/2015US8963244 Semiconductor device, integrated circuit and method of manufacturing a semiconductor device
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