Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
02/26/2015 | US20150053985 Micromachine and method for manufacturing the same |
02/26/2015 | US20150053984 Thin film transistor substrate and the method thereof |
02/26/2015 | US20150053983 Systems and methods for dopant activation using pre-amorphization implantation and microwave radiation |
02/26/2015 | US20150053982 Heterojunction bipolar transistors with reduced parasitic capacitance |
02/26/2015 | US20150053981 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device |
02/26/2015 | US20150053978 Semiconductor Device |
02/26/2015 | US20150053977 Semiconductor device and manufacturing method thereof |
02/26/2015 | US20150053976 Display device and method for manufacturing the same |
02/26/2015 | US20150053975 Semiconductor device |
02/26/2015 | US20150053974 Thin film transistor and display array substrate using same |
02/26/2015 | US20150053973 Capacitor and Semiconductor Device |
02/26/2015 | US20150053972 Semiconductor device |
02/26/2015 | US20150053971 Semiconductor device |
02/26/2015 | US20150053969 Semiconductor device and method for manufacturing same |
02/26/2015 | US20150053968 Semiconductor device, method for manufacturing semiconductor device, and display device |
02/26/2015 | US20150053967 Oxide tft, preparation method thereof, array substrate, and display device |
02/26/2015 | US20150053966 Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof |
02/26/2015 | US20150053930 Atomic layer deposition of selected molecular clusters |
02/26/2015 | US20150053929 Vertical iii-v nanowire field-effect transistor using nanosphere lithography |
02/26/2015 | US20150053928 Silicon and silicon germanium nanowire formation |
02/26/2015 | US20150053927 Stretchable transistors with buckled carbon nanotube films as conducting channels |
02/26/2015 | US20150053926 Graphite and/or graphene semiconductor devices |
02/26/2015 | US20150053925 Top-Down Fabrication Method for Forming a Nanowire Transistor Device |
02/26/2015 | US20150053921 Enhanced switch device and manufacturing method therefor |
02/26/2015 | US20150053913 Suspended nanowire structure |
02/26/2015 | US20150053912 Integrate Circuit With Nanowires |
02/26/2015 | US20150053263 Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer |
02/26/2015 | US20150053259 P-type doping of ii-vi materials with rapid vapor deposition using radical nitrogen |
02/26/2015 | DE112013002722T5 Adaptiver ladungsausgeglichener Randabschluss Adaptive charge balanced edge termination |
02/26/2015 | DE112013002260T5 Aufbau einer integrierten Schaltung Construction of an integrated circuit |
02/26/2015 | DE112013001927T5 Herstellungsverfahren für eine Siliziumcarbid-Halbleitervorrichtung Manufacturing method for a silicon carbide semiconductor device |
02/26/2015 | DE112013001802T5 Hochspannungshalbleitervorrichtung High voltage semiconductor device |
02/26/2015 | DE112012006543T5 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation |
02/26/2015 | DE112012006441T5 Bipolartransistor vom Isolierschichttyp Bipolar transistor Isolierschichttyp |
02/26/2015 | DE10259035B4 ESD-Schutzbauelement und Schaltungsanordnung mit einem ESD-Schutzbauelement ESD protection device and circuit with an ESD protection device |
02/26/2015 | DE10250830B4 Verfahren zum Herstellung eines Schaltkreis-Arrays A method of manufacturing a circuit array |
02/26/2015 | DE102013112785B3 Verfahren zur Herstellung eines Verbundkörpers mit zumindest einer funktionellen Schicht oder zur weiteren Herstellung elektronischer oder opto-elektronischer Bauelemente A process for producing a composite body having at least one functional layer or to the further manufacture of electronic or opto-electronic components, |
02/26/2015 | DE102013109635A1 Halbleiteranordnung und Verfahren, um dieselbe zu bilden To form the same semiconductor device and method |
02/26/2015 | DE102004059971B4 Lasermaske und Kristallisationsverfahren unter Verwendung derselber sowie Display und Verfahren zu dessen Herstellung Laser mask and crystallization method using DERS Elber and display and process for its preparation |
02/25/2015 | EP2840613A1 Heterojunction unipolar diode with low turn-on voltage |
02/25/2015 | EP2840612A1 Semiconductor device |
02/25/2015 | EP2840595A1 Method for manufacturing silicon carbide semiconductor device |
02/25/2015 | EP2840594A2 Recrystallisation of blocks with source and drain by the top |
02/25/2015 | EP2840592A1 Semiconductor device manufacturing method |
02/25/2015 | EP2840372A1 Double-sided coated surface stress sensor |
02/25/2015 | EP2839509A2 A metal-semiconductor-metal (msm) heterojunction diode |
02/25/2015 | EP2839508A1 Device with graded barrier layer |
02/25/2015 | EP2839270A1 A platform unit for combined sensing of pressure, temperature and humidity |
02/24/2015 | US8964497 Bit line sense amplifier and layout method therefor |
02/24/2015 | US8964491 Graphene-based memory devices and methods therefor |
02/24/2015 | US8964475 Memory cell string based on gated-diode cell and memory array using the same |
02/24/2015 | US8964473 Select gate materials having different work functions in non-volatile memory |
02/24/2015 | US8964462 Nonvolatile memory device using a threshold voltage switching material and method for manufacturing same |
02/24/2015 | US8964461 Techniques for providing a direct injection semiconductor memory device |
02/24/2015 | US8964141 Thin film transistor, method of manufacturing the same, and display device having thin film transistor |
02/24/2015 | US8963658 Micropstrip transmission line/coplanar waveguide (CPW) transistor structure |
02/24/2015 | US8963544 Signal transmission device |
02/24/2015 | US8963338 III-nitride transistor stacked with diode in a package |
02/24/2015 | US8963337 Thin wafer support assembly |
02/24/2015 | US8963336 Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same |
02/24/2015 | US8963331 Semiconductor constructions, semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers |
02/24/2015 | US8963330 Circuit structures and electronic systems |
02/24/2015 | US8963325 Power device and power device module |
02/24/2015 | US8963315 Semiconductor device with surface electrodes |
02/24/2015 | US8963297 Semiconductor apparatus |
02/24/2015 | US8963296 Double trench rectifier |
02/24/2015 | US8963295 Semiconductor structure with beryllium oxide |
02/24/2015 | US8963294 Dense chevron finFET and method of manufacturing same |
02/24/2015 | US8963293 High resistivity silicon-on-insulator substrate and method of forming |
02/24/2015 | US8963292 Semiconductor device having backside redistribution layers and method for fabricating the same |
02/24/2015 | US8963290 Semiconductor device and manufacturing method therefor |
02/24/2015 | US8963289 Digital semiconductor variable capacitor |
02/24/2015 | US8963288 ESD protection circuit |
02/24/2015 | US8963285 Semiconductor device and method of manufacturing thereof |
02/24/2015 | US8963284 Semiconductor devices having E-fuse structures and methods of fabricating the same |
02/24/2015 | US8963283 Method of fabricating isolated capacitors and structure thereof |
02/24/2015 | US8963282 Crack stop structure and method for forming the same |
02/24/2015 | US8963281 Simultaneous isolation trench and handle wafer contact formation |
02/24/2015 | US8963280 Semiconductor devices and methods of manufacture |
02/24/2015 | US8963279 Semiconductor device isolation structures |
02/24/2015 | US8963278 Three-dimensional integrated circuit device using a wafer scale membrane |
02/24/2015 | US8963277 Semiconductor structure and method of manufacturing the same |
02/24/2015 | US8963276 Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells |
02/24/2015 | US8963274 Epitaxial structure for vertically integrated charge transfer gate technology in optoelectronic materials |
02/24/2015 | US8963270 Fabrication of interconnected thin-film concentrator cells using shadow masks |
02/24/2015 | US8963265 Graphene based quantum detector device |
02/24/2015 | US8963264 Magnetic stack with orthogonal biasing layer |
02/24/2015 | US8963262 Method and apparatus for forming MEMS device |
02/24/2015 | US8963260 Power semiconductor device and fabrication method thereof |
02/24/2015 | US8963259 Device isolation in finFET CMOS |
02/24/2015 | US8963258 FinFET with bottom SiGe layer in source/drain |
02/24/2015 | US8963257 Fin field effect transistors and methods for fabricating the same |
02/24/2015 | US8963255 Strained silicon carbide channel for electron mobility of NMOS |
02/24/2015 | US8963254 Simultaneous formation of FinFET and MUGFET |
02/24/2015 | US8963251 Semiconductor device with strain technique |
02/24/2015 | US8963249 Electronic device with controlled threshold voltage |
02/24/2015 | US8963248 Semiconductor device having SSOI substrate with relaxed tensile stress |
02/24/2015 | US8963246 Semiconductor device and method for manufacturing semiconductor device |
02/24/2015 | US8963245 Integrated circuit having lateral compensation component |
02/24/2015 | US8963244 Semiconductor device, integrated circuit and method of manufacturing a semiconductor device |