H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2004
08/25/2004	CN1523655A Capacitor in in-connection system and making method thereof
08/25/2004	CN1523653A Semiconductor device for charge-up damage evaluation and charge-up damage evaluation method
08/25/2004	CN1523649A Double-grid field effect transistor and manufacturing method thereof
08/25/2004	CN1523648A Ultra-violet treatment for a tunnel barrier layer in a tunnel junction device
08/25/2004	CN1523644A Method for forming a semiconductor device
08/25/2004	CN1523561A Image sensor apparatus having additional display device function
08/25/2004	CN1523554A Display apparatus
08/25/2004	CN1523436A Colorful light filter production method and semi-transmissive liquid crystal display device
08/25/2004	CN1523435A Thin film transistor array panel for liquid crystal display
08/25/2004	CN1523433A Active matrix display device
08/25/2004	CN1523413A 显示装置 The display device
08/25/2004	CN1523412A Display device and method for manufacturing the same
08/25/2004	CN1523331A Sensor having membrane and method for manufacturing the same
08/25/2004	CN1163975C Semiconductor diode
08/25/2004	CN1163974C Semiconductor device and method of mfg. same
08/25/2004	CN1163973C Trench DMOS device and manufacturing method thereof
08/25/2004	CN1163968C Semiconductor device and manufacture thereof
08/25/2004	CN1163966C Semiconductor memory device and method of manufacturing the same
08/25/2004	CN1163964C Film transistor array panel for liquid crystal display device
08/25/2004	CN1163957C Method of fabricating semiconductor device
08/25/2004	CN1163908C Non-volatile semiconductor memory
08/24/2004	US6782021 Quantum dot vertical cavity surface emitting laser
08/24/2004	US6781912 Providing protection against transistor junction breakdowns from supply voltage
08/24/2004	US6781890 Nonvolatile memory and processing system
08/24/2004	US6781881 Two-transistor flash cell for large endurance application
08/24/2004	US6781876 Memory device with gallium nitride or gallium aluminum nitride gate
08/24/2004	US6781875 Semiconductor memory device and semiconductor device
08/24/2004	US6781667 Method of manufacturing image-forming apparatus
08/24/2004	US6781652 Liquid crystal display panel and method for manufacturing light reflecting film thereof
08/24/2004	US6781651 Thin film transistor substrate having black matrix and method for fabricating the same
08/24/2004	US6781646 Liquid crystal display device having gate electrode with two conducting layers, one used for self-aligned formation of the TFT semiconductor regions
08/24/2004	US6781644 Liquid crystal display with thin film transistor array free from short-circuit and process for fabrication thereof
08/24/2004	US6781409 Apparatus and methods for silicon-on-insulator transistors in programmable logic devices
08/24/2004	US6781321 Organic electroluminescent display having power line parallel to gate line and fabricating method thereof
08/24/2004	US6781244 Electrical die contact structure and fabrication method
08/24/2004	US6781214 Metastable base in a high-performance HBT
08/24/2004	US6781213 Device including a resistive path to introduce an equivalent RC circuit
08/24/2004	US6781207 Semiconductor device and manufacturing method thereof
08/24/2004	US6781204 Spreading the power dissipation in MOS transistors for improved ESD protection
08/24/2004	US6781203 MOSFET with reduced threshold voltage and on resistance and process for its manufacture
08/24/2004	US6781202 Semiconductor devices and their fabrication methods
08/24/2004	US6781201 Semiconductor device including power MOSFET and peripheral MOSFET device having gate electrodes formed in the trenches
08/24/2004	US6781200 Insulated gate semiconductor device for realizing low gate capacity and a low short-circuit current
08/24/2004	US6781199 Semiconductor device having first and second trenches with no control electrode formed in the second trench
08/24/2004	US6781198 High-voltage vertical transistor with a multi-layered extended drain structure
08/24/2004	US6781197 Trench-type MOSFET having a reduced device pitch and on-resistance
08/24/2004	US6781196 Trench DMOS transistor having improved trench structure
08/24/2004	US6781195 Semiconductor bidirectional switching device and method
08/24/2004	US6781194 Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
08/24/2004	US6781193 Non-volatile memory device having floating trap type memory cell and method of forming the same
08/24/2004	US6781191 High memory cell capacity.
08/24/2004	US6781189 Floating gate transistor with STI
08/24/2004	US6781188 Having a floating gate element
08/24/2004	US6781187 Nonvolatile semiconductor memory device
08/24/2004	US6781186 Stack-gate flash cell structure having a high coupling ratio and its contactless flash memory arrays
08/24/2004	US6781182 Interconnect line selectively isolated from an underlying contact plug
08/24/2004	US6781181 Layout of a folded bitline DRAM with a borderless bitline
08/24/2004	US6781178 Non-volatile solid state image pickup device and its drive
08/24/2004	US6781176 Conductively doped strontium titanate barrier intermediate a silicon underlayer and an epitaxial metal oxide film
08/24/2004	US6781174 Magnetoresistive memory device assemblies
08/24/2004	US6781171 Pinned photodiode for a CMOS image sensor and fabricating method thereof
08/24/2004	US6781168 Semiconductor device
08/24/2004	US6781167 Semiconductor device and its manufacture
08/24/2004	US6781166 Nanoscopic wire-based devices and arrays
08/24/2004	US6781165 Hetero-junction bipolar transistor with gold out-diffusion barrier made from InP or InGaP
08/24/2004	US6781164 Semiconductor element
08/24/2004	US6781163 Heterojunction field effect transistor
08/24/2004	US6781161 Non-gated thyristor device
08/24/2004	US6781156 Incorporation of charge carrier lifetime controlling impurities into semiconductor power devices
08/24/2004	US6781155 Electroluminescence display device with a double gate type thin film transistor having a lightly doped drain structure
08/24/2004	US6781154 Semiconductor apparatus
08/24/2004	US6781153 Contact between element to be driven and thin film transistor for supplying power to element to be driven
08/24/2004	US6781151 Failure analysis vehicle
08/24/2004	US6780788 Methods for improving within-wafer uniformity of gate oxide
08/24/2004	US6780786 Method for producing a porous silicon film
08/24/2004	US6780784 Etchant is hydrogen peroxide (h2o2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt; for liquid crystal display devices having copper lines
08/24/2004	US6780781 Method for manufacturing an electronic device
08/24/2004	US6780776 Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer
08/24/2004	US6780762 Self-aligned, integrated circuit contact and formation method
08/24/2004	US6780750 Photodiode for ultra high speed optical communication and fabrication method therefor
08/24/2004	US6780746 Method for fabricating a chip scale package using wafer level processing and devices resulting therefrom
08/24/2004	US6780743 Method of forming a floating gate in a flash memory device
08/24/2004	US6780742 Undulated moat for reducing contact resistance
08/24/2004	US6780741 Method of forming a novel gate electrode structure comprised of a silicon-germanium layer located between random grained polysilicon layers
08/24/2004	US6780740 Method for fabricating a floating gate semiconductor device
08/24/2004	US6780732 DRAM access transistor
08/24/2004	US6780730 Reduction of negative bias temperature instability in narrow width PMOS using F2 implantation
08/24/2004	US6780725 Method for forming a semiconductor device including forming vertical npn and pnp transistors by exposing the epitaxial layer, forming a monocrystal layer and adjusting the impurity concentration in the epitaxial layer
08/24/2004	US6780724 Method of manufacturing a bipolar transistor semiconductor device
08/24/2004	US6780722 Field effect transistor on insulating layer and manufacturing method
08/24/2004	US6780720 Method for fabricating a nitrided silicon-oxide gate dielectric
08/24/2004	US6780719 Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures
08/24/2004	US6780718 Transistor structure and method for making same
08/24/2004	US6780717 Semiconductor integrated circuit device and method of manufacturing the same
08/24/2004	US6780714 Semiconductor devices and their manufacture
08/24/2004	US6780713 Process for manufacturing a DMOS transistor
08/24/2004	US6780712 Method for fabricating a flash memory device having finger-like floating gates structure
08/24/2004	US6780705 Semiconductor device and its manufacture
08/24/2004	US6780702 Method of reducing device parasitic capacitance using underneath crystallographically selective wet etching
08/24/2004	US6780701 Method for manufacturing high-breakdown voltage transistor and low-breakdown voltage transistor on the same substrate

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