| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/26/2004 | US20040164378 Method for fabricating an NPN transistor in a BICMOS technology |
| 08/26/2004 | US20040164377 Semiconductor device including voltage conversion circuit having temperature dependency |
| 08/26/2004 | US20040164376 Semiconductor device and method for manufacturing the same |
| 08/26/2004 | US20040164375 Semiconductor integrated circuit device and a method of manufacturing the same |
| 08/26/2004 | US20040164374 Field effect transistor and method of manufacturing the same |
| 08/26/2004 | US20040164373 Shallow trench isolation structure for strained Si on SiGe |
| 08/26/2004 | US20040164369 Tilted array geometry for improved MRAM switching |
| 08/26/2004 | US20040164365 reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2; formed by ion assisted electron beam evaporation of TiO2 and electron beam evaporation of a lanthamide, particularly Nd, Tb, and Dy |
| 08/26/2004 | US20040164364 Semiconductor device and its manufacturing method |
| 08/26/2004 | US20040164363 depositing nanoparticles having relative dielectric constant greater than 10 coated with organic surfactant on a substrate to form a monolayer; controlling granularity and thickness of dielectric films; integration into high-density memory devices |
| 08/26/2004 | US20040164362 Reactive gate electrode conductive barrier |
| 08/26/2004 | US20040164361 Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact |
| 08/26/2004 | US20040164359 memory functional element on the semiconductor layer across the boundary of the first and second conductivity type regions; electrode in contact with the memory and on the first conductivity type region via an insulation film |
| 08/26/2004 | US20040164357 Atomic layer-deposited LaAIO3 films for gate dielectrics |
| 08/26/2004 | US20040164356 Electrostatic discharge protection structures having high holding current for latch-up immunity |
| 08/26/2004 | US20040164355 Arrangement for ESD protection of an integrated circuit |
| 08/26/2004 | US20040164354 Minimum-dimension, fully- silicided MOS driver and ESD protection design for optimized inter-finger coupling |
| 08/26/2004 | US20040164353 upper side portion of a semiconductor layer is rounded to prevent a concentration of an electric field and a resultant lowering of a threshold voltage; generation of etching residue is prevented by a concavity of a U-shaped section |
| 08/26/2004 | US20040164352 Active matrix pixel device construction method |
| 08/26/2004 | US20040164351 SOI-LDMOS device with integral voltage sense electrodes |
| 08/26/2004 | US20040164350 Power mosfet device |
| 08/26/2004 | US20040164349 without sacrificing ON-voltage, switch-OFF characteristics, and miniaturization; relaxes electric fields in a semiconductor substrate without thickening thickness of a drift region |
| 08/26/2004 | US20040164348 minimum number of epitaxial deposition steps while allowing sufficient control of process parameters so that a high degree of charge compensation can be achieved in adjacent columns of opposite in the drift region |
| 08/26/2004 | US20040164347 Design and fabrication of rugged FRED |
| 08/26/2004 | US20040164346 Power switching transistor with low drain to gate capacitance |
| 08/26/2004 | US20040164345 Semiconductor memory with vertical charge-trapping memory cells and fabrication |
| 08/26/2004 | US20040164344 Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source |
| 08/26/2004 | US20040164343 Semiconductor storage device |
| 08/26/2004 | US20040164342 Integrated circuit memory device and method |
| 08/26/2004 | US20040164341 Operating a memory device |
| 08/26/2004 | US20040164340 Nonvolatile semiconductor memory device including improved gate electrode |
| 08/26/2004 | US20040164338 Semiconductor device and method for fabricating the same |
| 08/26/2004 | US20040164329 Semiconductor device and method of manufacturing the same |
| 08/26/2004 | US20040164328 Semiconductor device and method of manufacturing the same |
| 08/26/2004 | US20040164327 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
| 08/26/2004 | US20040164320 Method of activating polysilicon gate structure dopants after offset spacer deposition |
| 08/26/2004 | US20040164319 Gallium arsenide HBT having increased performance and method for its fabrication |
| 08/26/2004 | US20040164318 Structures with planar strained layers |
| 08/26/2004 | US20040164317 Heterojunction type compound semiconductor field effect transistor and its manufacturing method |
| 08/26/2004 | US20040164316 Pressure contact type semiconductor device having dummy segment |
| 08/26/2004 | US20040164312 Method of fabricating semiconductor device and semiconductor device |
| 08/26/2004 | US20040164306 Method and apparatus for manufacturing display panel |
| 08/26/2004 | US20040164305 Insulated channel field effect transistor with an electric field terminal region |
| 08/26/2004 | US20040164304 Insulated gate planar integrated power device with co-integrated schottky diode and process |
| 08/26/2004 | US20040164303 Contact between element to be driven and thin film transistor for supplying power to element to be driven |
| 08/26/2004 | US20040164302 Thin film integrated circuit device IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
| 08/26/2004 | US20040164301 Display Apparatus |
| 08/26/2004 | US20040164300 Semiconductor device and method of manufacturing the same |
| 08/26/2004 | US20040164299 Reflective type thin film transistor display device and methods for fabricating the same |
| 08/26/2004 | US20040164298 Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same |
| 08/26/2004 | US20040164297 Display device |
| 08/26/2004 | US20040164296 first n-channel TFT having a source wiring and a terminal portion made of the same material as the gate electrode; low power consumption is realized even when screen size is increased, |
| 08/26/2004 | US20040164230 Active-matrix substrate and electromagnetic wave detector |
| 08/26/2004 | US20040163585 Method for manufacturing polycrystalline silicon thin film and thin film transistor fabricated using polycrystalline silicon thin film manufactured by the manufacturing |
| 08/26/2004 | US20040163477 Pressure sensor device and method of producing the same |
| 08/26/2004 | US20040163476 Episeal pressure sensor and method for making an episeal pressure sensor |
| 08/26/2004 | US20040163475 Sensor having membrane and method for manufacturing the same |
| 08/26/2004 | US20040163472 Acceleration sensor formed on surface of semiconductor substrate |
| 08/26/2004 | DE4331798B4 Verfahren zur Herstellung von mikromechanischen Bauelementen A process for preparing micromechanical components |
| 08/26/2004 | DE19941684B4 Halbleiterbauelement als Verzögerungselement A semiconductor device as a delay element |
| 08/26/2004 | DE10360884A1 Oganische Doppeltafel-Elektrolumineszenz-Anzeigevorrichtung und Herstellungsverfahren für diesselbe Oganische dual-panel electroluminescent display device and manufacturing method for the same |
| 08/26/2004 | DE10306076A1 Quantenpunkt aus elektrisch leitendem Kohlenstoff, Verfahren zur Herstellung und Anwendung Quantum point of electrically conducting carbon, process for the preparation and application |
| 08/26/2004 | DE10297177T5 Graben-FET mit selbstausgerichteter Source und selbstausgerichtetem Kontakt Trench FET with self-aligned source and contact selbstausgerichtetem |
| 08/26/2004 | DE10296955T5 Halbleitervorrichtung bzw. Halbleiterbauelement und Herstellungsverfahren dafür A semiconductor device or semiconductor device and manufacturing method thereof |
| 08/26/2004 | DE102004006989A1 Halbleitervorrichtung in Druckkontaktbauweise A semiconductor device in pressure contact design |
| 08/26/2004 | DE102004006537A1 Durch ein Siliziumkarbidsubstrat gebildete Halbleitervorrichtung und Verfahren zur Herstellung derselben Silicon carbide substrate formed by a semiconductor device and method of manufacturing the same |
| 08/26/2004 | DE102004006028A1 Halbleitervorrichtung mit Grabenkondensatoren und Verfahren zum Herstellen der Grabenkondensatoren A semiconductor device comprising grave capacitors and method of making the capacitors grave |
| 08/25/2004 | EP1450415A2 Gallium nitride-based III-V group compound semiconductor device |
| 08/25/2004 | EP1450414A2 Nitride semiconductor device |
| 08/25/2004 | EP1450412A2 Thin film device and method for making |
| 08/25/2004 | EP1450411A1 MOS power device with high integration density and manufacturing process thereof |
| 08/25/2004 | EP1450395A2 High temperature interface layer growth for high-K gate dielectric |
| 08/25/2004 | EP1450394A1 Semiconductor device and method for manufacturing same |
| 08/25/2004 | EP1449887A1 Organic semiconductor material and organic semiconductor element employing the same |
| 08/25/2004 | EP1449259A2 Ohmic contact structure and method for the production of the same |
| 08/25/2004 | EP1449258A1 Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same |
| 08/25/2004 | EP1449257A1 Trench-gate semiconductor devices and the manufacture thereof |
| 08/25/2004 | EP1449256A1 A field effect transistor semiconductor device |
| 08/25/2004 | EP1449254A1 Heterojunction semiconductor device and method of manufacturing such device |
| 08/25/2004 | EP1449249A2 Backside metallization on sides of microelectronic dice for effective thermal contact with heat dissipation devices |
| 08/25/2004 | EP1449245A2 Capacitor and a method for producing a capacitor |
| 08/25/2004 | EP1449243A1 Method for forming an oxynitride spacer for a metal gate electrode using a pecvd process with a silicon-starving atmosphere |
| 08/25/2004 | EP1449240A1 Incorporation of nitrogen into high k dielectric film |
| 08/25/2004 | EP1449217A1 A method for making self-registering non-lithographic transistors with ultrashort channel lengths |
| 08/25/2004 | EP1407192A4 Fabrication of an electrically conductive silicon carbide article |
| 08/25/2004 | CN2636428Y Pressure resistance sensing element of pressure sensor |
| 08/25/2004 | CN1524298A DMOS with zener diode for ESD protection |
| 08/25/2004 | CN1524297A Semiconductor device |
| 08/25/2004 | CN1524296A Rf power LDMOS transistor |
| 08/25/2004 | CN1524295A Method of creating a high performance organic semiconductor device |
| 08/25/2004 | CN1524288A Method of improving gate activation by employing atomic oxygen oxidation |
| 08/25/2004 | CN1523684A Nitride semiconductor device |
| 08/25/2004 | CN1523679A Thin film transistor substrate and method for making same |
| 08/25/2004 | CN1523678A 一种厚膜soi场效应晶体管 A thick film field effect transistor soi |
| 08/25/2004 | CN1523677A 半导体装置 Semiconductor device |
| 08/25/2004 | CN1523676A Semiconductor device having vertical transistor |
| 08/25/2004 | CN1523674A An asymmetric grid field effect transistor |
| 08/25/2004 | CN1523671A Semiconductor device and method for fabricating the same |
| 08/25/2004 | CN1523669A 开关电路装置 Switch circuit device |
| 08/25/2004 | CN1523668A 半导体器件 Semiconductor devices |