Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2005
03/08/2005US6864545 Semiconductor device including low-resistance wires electrically connected to impurity layers
03/08/2005US6864540 High performance FET with elevated source/drain region
03/08/2005US6864537 Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
03/08/2005US6864535 Controllable semiconductor switching element that blocks in both directions
03/08/2005US6864534 Semiconductor wafer
03/08/2005US6864533 MOS field effect transistor with reduced on-resistance
03/08/2005US6864532 Semiconductor device and method for manufacturing the same
03/08/2005US6864530 High density flash memory architecture with columnar substrate coding
03/08/2005US6864529 Thin film transistor memory device
03/08/2005US6864528 Integrated, tunable capacitor
03/08/2005US6864523 Self-aligned source pocket for flash memory cells
03/08/2005US6864520 Germanium field effect transistor and method of fabricating the same
03/08/2005US6864519 CMOS SRAM cell configured using multiple-gate transistors
03/08/2005US6864517 Bipolar structure with two base-emitter junctions in the same circuit
03/08/2005US6864516 SOI MOSFET junction degradation using multiple buried amorphous layers
03/08/2005US6864515 Pressure contact type semiconductor device having dummy segment
03/08/2005US6864510 Nitride semiconductor field effect transistor (FET) and method of fabricating the same
03/08/2005US6864508 Light emitting device
03/08/2005US6864507 Misfet
03/08/2005US6864505 Electro-optical device and electronic apparatus
03/08/2005US6864504 Planar polymer transistor
03/08/2005US6864396 Substituted pentacene semiconductors
03/08/2005US6864183 Method for manufacturing a semiconductor device
03/08/2005US6864178 Method of making a MOS transistor
03/08/2005US6864164 Finfet gate formation using reverse trim of dummy gate
03/08/2005US6864163 Fabrication of dual work-function metal gate structure for complementary field effect transistors
03/08/2005US6864161 Method of forming a gate structure using a dual step polysilicon deposition procedure
03/08/2005US6864155 Methods of forming silicon-on-insulator comprising integrated circuitry, and wafer bonding methods of forming silicon-on-insulator comprising integrated circuitry
03/08/2005US6864149 SOI chip with mesa isolation and recess resistant regions
03/08/2005US6864148 Corner protection to reduce wrap around
03/08/2005US6864145 Method of fabricating a robust gate dielectric using a replacement gate flow
03/08/2005US6864143 Eliminate bridging between gate and source/drain in cobalt salicidation
03/08/2005US6864141 Method of incorporating nitrogen into metal silicate based dielectrics by energized nitrogen ion beams
03/08/2005US6864140 Thin-film transistor used as heating element for microreaction chamber
03/08/2005US6864139 Static NVRAM with ultra thin tunnel oxides
03/08/2005US6864136 DRAM cell with enhanced SER immunity
03/08/2005US6864135 Semiconductor fabrication process using transistor spacers of differing widths
03/08/2005US6864134 Manufacturing method of thin film transistor substrate
03/08/2005US6864133 Device, method of manufacturing device, electro-optic device, and electronic equipment
03/08/2005US6864132 Methods of fabricating integrated circuit gates by pretreating prior to oxidizing
03/08/2005US6864131 Complementary Schottky junction transistors and methods of forming the same
03/08/2005US6864130 Crystallization method of silicon thin film, thin film transistor manufactured using the method, and flat panel display including the thin film transistor
03/08/2005US6864129 Double gate MOSFET transistor and method for the production thereof
03/08/2005US6864128 Manufacturing method for a semiconductor device
03/08/2005US6864126 Methods of manufacturing semiconductor devices
03/08/2005US6864125 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3
03/08/2005US6864118 Electronic devices containing organic semiconductor materials
03/08/2005US6864116 Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
03/08/2005US6864111 Column-row addressable electric microswitch arrays and sensor matrices employing them
03/08/2005US6864109 Method and system for determining a component concentration of an integrated circuit feature
03/08/2005US6863841 Light emitting diodes; thin films transistors
03/08/2005US6862942 Surface pressure distribution sensor
03/08/2005US6862795 Micromachined from silicon to form one or more sensor cells, each sensor cell having an inertial mass positioned by beam members fixed to a silicon support structure; forming etch-stop layer, aligning frame-shaped channel, etching
03/03/2005WO2005020402A1 Integrated electronic disconnecting circuits methods, and systems
03/03/2005WO2005020343A1 Method for sealing thin film transistors
03/03/2005WO2005020342A1 Vertical organic fet and its manufacturing method
03/03/2005WO2005020337A1 Light-emitting device
03/03/2005WO2005020331A1 Electric power transforming apparatus
03/03/2005WO2005020330A1 Method for improving the electrical characteristics of active bipolar components
03/03/2005WO2005020329A1 Transition metal alloys for use as a gate electrode and devices incorporating these alloys
03/03/2005WO2005020323A2 Field effect transistor having increased carrier mobility
03/03/2005WO2005020320A1 Semiconductor device, method for manufacturing same, and power converter using such semiconductor device
03/03/2005WO2005020314A1 High mobility misfet semiconductor device on silicon substrate with cavity and a method for producing same
03/03/2005WO2005020312A1 Method of fabricating an ultra-narrow channel semiconductor device
03/03/2005WO2005020305A2 Optical device comprising crystalline semiconductor layer and reflective element
03/03/2005WO2005020301A1 Method of producing thin-film semiconductor and production device
03/03/2005WO2005020287A2 Semiconductor device and method
03/03/2005WO2005020275A2 Vertical semiconductor device
03/03/2005WO2005020241A2 Fowler-nordheim block alterable eeprom memory cell
03/03/2005WO2005019986A2 Enhanced parimutuel wagering
03/03/2005WO2005019789A1 Pressure sensor device
03/03/2005WO2004053931B1 Package having exposed integrated circuit device
03/03/2005US20050050507 Basic cell, edge cell, wiring shape, wiring method, and shield wiring structure
03/03/2005US20050048803 Insulator for an organic electronic component
03/03/2005US20050048800 Controlled growth of highly uniform, oxide layers, especially ultrathin layers
03/03/2005US20050048799 Film forming material, film forming method, and film
03/03/2005US20050048796 Forming method and a forming apparatus of nanocrystalline silicon structure
03/03/2005US20050048794 Method for making a semiconductor device having a high-k gate dielectric
03/03/2005US20050048793 Fabrication of DRAM and other semiconductor devices with an insulating film using a wet rapid thermal oxidation process
03/03/2005US20050048779 Semiconductor device and method of manufacturing the same
03/03/2005US20050048778 Use of thin SOI to inhibit relaxation of SiGe layers
03/03/2005US20050048774 Method for manufacturing semiconductor device
03/03/2005US20050048752 Ultra thin channel MOSFET
03/03/2005US20050048750 Method for fabricating a semiconductor device having salicide
03/03/2005US20050048747 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
03/03/2005US20050048746 Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal
03/03/2005US20050048745 Deposition over mixed substrates
03/03/2005US20050048744 Method of manufacturing semiconductor device
03/03/2005US20050048743 Method of growing as a channel region to reduce source/drain junction capicitance
03/03/2005US20050048735 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
03/03/2005US20050048732 Method to produce transistor having reduced gate height
03/03/2005US20050048730 Field effect transistors and methods for manufacturing field effect transistors
03/03/2005US20050048728 Semiconductor device and manufacturing method therefor
03/03/2005US20050048727 Formation of finfet using a sidewall epitaxial layer
03/03/2005US20050048726 Lateral MOSFET structure of an integrated circuit having separated device regions
03/03/2005US20050048725 Semiconductor device and manufacturing method thereof
03/03/2005US20050048722 Method of manufacturing semiconductor device
03/03/2005US20050048721 Structure and fabricating method with self-aligned bit line contact to word line in split gate flash
03/03/2005US20050048720 Floating gate memory cell, floating gate memory arrangement circuit arrangement and method for fabricating a floating gate memory cell
03/03/2005US20050048718 Method for manufacturing flash memory device
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