Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2005
03/31/2005WO2005029545A2 Self-aligned planar double-gate process by self-aligned oxidation
03/31/2005WO2005029504A2 Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
03/31/2005WO2005029498A2 Nanoscale wire coding for stochastic assembly
03/31/2005WO2005029450A1 Electrode wiring substrate and display device
03/31/2005WO2005020287A9 Semiconductor device and method
03/31/2005WO2005017962A9 System and process for producing nanowire composites and electronic substrates therefrom
03/31/2005WO2005017960A3 Quantum dot infrared photodetector focal plane array
03/31/2005WO2005004202A3 Full spectrum phosphor blends for white light generation with led chips
03/31/2005WO2004114410A3 Trench mos structure
03/31/2005US20050070123 Method for forming a thin film and method for fabricating a semiconductor device
03/31/2005US20050070122 Thin germanium oxynitride gate dielectric for germanium-based devices
03/31/2005US20050070120 Methods and devices for an insulated dielectric interface between high-k material and silicon
03/31/2005US20050070105 Small volume process chamber with hot inner surfaces
03/31/2005US20050070081 Method for manufacturing semiconductor device
03/31/2005US20050070079 Method to control the interfacial layer for deposition of high dielectric constant films
03/31/2005US20050070070 Method of forming strained silicon on insulator
03/31/2005US20050070063 High performance MIS capacitor with HfO2 dielectric
03/31/2005US20050070055 Thin film transistor and method for production thereof
03/31/2005US20050070054 Thin-film transistor device, method of manufacturing the same, thin-film transistor substrate provided therewith and display device
03/31/2005US20050070052 Apparatus and method for programming a one-time programmable memory device
03/31/2005US20050070035 Display panel and method for manufacturing the same
03/31/2005US20050070032 Ferroelectric polymer memory with a thick interface layer
03/31/2005US20050068828 Merged MOS-bipolar capacitor memory cell
03/31/2005US20050068823 Nonvolatile semiconductor memory and method for controlling the same
03/31/2005US20050068822 Memory device and its manufacturing method
03/31/2005US20050068485 TFT active matrix liquid crystal display devices
03/31/2005US20050068482 Liquid crystal display apparatus
03/31/2005US20050068310 Electro-optical device and electronic apparatus
03/31/2005US20050068272 Electroluminescent display device and manufacturing method of the same
03/31/2005US20050068117 Strained-silicon voltage controlled oscillator (VCO)
03/31/2005US20050067716 Group III nitride based flip-chip integrated circuit and method for fabricating
03/31/2005US20050067704 Semiconductor device and method of manufacturing the same
03/31/2005US20050067698 Optical semiconductor device
03/31/2005US20050067693 Semiconductor device and manufacturing method thereof
03/31/2005US20050067674 Integrated tuneable capacitance
03/31/2005US20050067672 Semiconductor device and method for fabricating the same
03/31/2005US20050067670 Method and apparatus for using cobalt silicided polycrystalline silicon for a one time programmable non-volatile semiconductor memory
03/31/2005US20050067665 Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same
03/31/2005US20050067664 MOSFET structures with conductive niobium oxide gates
03/31/2005US20050067663 Oxide-nitride stack gate dielectric
03/31/2005US20050067662 Transistor having a protruded drain and method of manufacturing the transistor
03/31/2005US20050067661 Semiconductor device with silicide film and method of manufacturing the same
03/31/2005US20050067660 Integrated semiconductor device providing for preventing the action of parasitic transistors
03/31/2005US20050067659 Memory cell with nanocrystals or nanodots
03/31/2005US20050067658 Dry etching method for semiconductor device
03/31/2005US20050067657 Semiconductor device
03/31/2005US20050067656 Process for fabricating thin film transistors
03/31/2005US20050067655 Metal-oxide-semiconductor device including a buried lightly-doped drain region
03/31/2005US20050067653 Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
03/31/2005US20050067652 Nonvolatile semiconductor memory and a fabrication method thereof
03/31/2005US20050067651 Nonvolatile memory cell employing a plurality of dielectric nanoclusters and method of fabricating the same
03/31/2005US20050067648 Volatile memory devices and methods for forming same
03/31/2005US20050067647 Methods of forming dynamic random access memory trench capacitors
03/31/2005US20050067639 CMOS image sensor and method for manufacturing the same
03/31/2005US20050067638 Interfacial trap layer to improve carrier injection
03/31/2005US20050067634 Nonvolatile integrated semiconductor memory
03/31/2005US20050067632 Semiconductor device
03/31/2005US20050067631 Low noise vertical variable gate control voltage JFET device in a BiCMOS process and methods to build this device
03/31/2005US20050067630 Vertical junction field effect power transistor
03/31/2005US20050067629 Semimetal semiconductor
03/31/2005US20050067627 High efficiency multi-active layer tunnel regenerated white light emitting diode
03/31/2005US20050067624 Contacting scheme for large and small area semiconductor light emitting flip chip devices
03/31/2005US20050067622 Semiconductor device and method of its manufacture
03/31/2005US20050067620 Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
03/31/2005US20050067619 Thin film semiconductor device and fabrication method therefor
03/31/2005US20050067618 Method of manufacturing semiconductor devices
03/31/2005US20050067617 Semiconductor device and manufacturing method thereof
03/31/2005US20050067615 Semiconductor device and fabrication method thereof
03/31/2005US20050067614 Semiconductor substrate
03/31/2005US20050067613 Nitride-based semiconductor device
03/31/2005US20050067612 Current controlling device
03/31/2005US20050066729 Capacitance type dynamic quantity sensor
03/31/2005DE69728648T2 Halbleitervorrichtung mit hochfrequenz-bipolar-transistor auf einem isolierenden substrat A semiconductor device having high-frequency bipolar transistor on an insulating substrate
03/31/2005DE10355225B3 Making trench capacitor with insulating collar in substrate for use as semiconductor memory cell, employs selective masking, filling, lining and removal techniques
03/31/2005DE10339531A1 Vertikaler Nano-Transistor, Verfahren zu seiner Herstellung und Speicheranordnung Vertical nano-transistors, to processes for its preparation and storage device
03/31/2005DE10339487A1 Semiconductor chip manufacture system for formation of chips on semiconductor wafer involves formation of pits in rear surface, plating with solder and application of solder to fill pits
03/31/2005DE102004042761A1 Sensoranordnung eines Kapazitätstyps für eine dynamische Grösse A capacitance type sensor arrangement for a dynamic size
03/31/2005DE102004040997A1 Isolierschichttransistor mit eingebauter Diode Insulated with built-in diode
03/31/2005DE102004031516A1 Verfahren zur Herstellung von Flasch-Speicher-Bauelementen Hintergrund A process for preparing Flasch memory devices background
03/31/2005CA2538016A1 Multidirectional light emitting diode unit
03/31/2005CA2536030A1 Wide bandgap transistor devices with field plates
03/30/2005EP1519421A1 Multiple gate semiconductor device and method for forming same
03/30/2005EP1519420A2 Multiple gate semiconductor device and method for forming same
03/30/2005EP1519419A2 Semiconductor device and manufacturing method thereof
03/30/2005EP1519418A1 Semiconductor device and method for manufacturing same
03/30/2005EP1519173A1 Semiconductor force sensor
03/30/2005EP1518280A2 Transistor and sensors made from molecular materials with electric dipoles
03/30/2005EP1518278A1 Vertical nrom
03/30/2005EP1518277A2 Method for the production of a nrom memory cell field
03/30/2005EP1518266A1 Method for producing a hetero-bipolar transistor and hetero-bipolar-transistor
03/30/2005EP1518264A1 Conductive spacers extended floating gates
03/30/2005EP1518263A1 Hafnium-aluminum oxide dielectric films
03/30/2005EP1518247A1 Method of erasing a flash memory using a pre-erasing step
03/30/2005EP1518245A2 Enhanced read-write methods for negative differential resistance (ndr) based memory device
03/30/2005EP1518098A1 High-pressure sensor comprising silicon membrane and solder layer
03/30/2005EP1461816A4 Mems device having contact and standoff bumps and related methods
03/30/2005EP1388166B1 Production method for a semiconductor component
03/30/2005EP1242826B1 Acceleration sensor with limited movability in the vertical direction
03/30/2005EP1123492B1 Circuit configuration for compensating the temperature non-linearity of the characteristic curves of the piezoresistive measuring resistors connected in a bridge circuit
03/30/2005CN2689461Y Electrothermal modules
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