Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2005
03/17/2005US20050056882 Mirror image memory cell transistor pairs featuring poly floating spacers
03/17/2005US20050056881 Dummy pattern for silicide gate electrode
03/17/2005US20050056880 Nonvolatile memory cells having split gate structure and methods of fabricating the same
03/17/2005US20050056879 Method and structure to improve the gate coupling ratio (GCR) for manufacturing a flash memory device
03/17/2005US20050056877 Nanotube-on-gate fet structures and applications
03/17/2005US20050056876 Semiconductor memory device
03/17/2005US20050056873 DRAM memory with vertically arranged selection transistors
03/17/2005US20050056872 Transverse junction field effect transistor
03/17/2005US20050056871 Semiconductor dice with edge cavities
03/17/2005US20050056869 Nonvolatile semiconductor memory cell matrix, a mehtod for operating the same, monolithic integrated circuits and systems
03/17/2005US20050056867 Surface photovoltage-based sensing of molecules
03/17/2005US20050056866 Circuit arrays having cells with combinations of transistors and nanotube switching elements
03/17/2005US20050056863 Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell
03/17/2005US20050056861 Enhanced photodetector
03/17/2005US20050056854 Method for fabricating integrated emitter devices and integrated emitter devices
03/17/2005US20050056853 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer
03/17/2005US20050056851 Optoelectronic component and optoelectronic arrangement with an optoelectronic component
03/17/2005US20050056849 Semiconductor device and method of making thereof
03/17/2005US20050056848 Semiconductor device and manufacturing method thereof
03/17/2005US20050056847 Active matrix substrate and display device comprising same
03/17/2005US20050056846 Thin film transistor structure for a field emission display and the method for making the same
03/17/2005US20050056845 Dual silicon layer for chemical mechanical polishing planarization
03/17/2005US20050056844 Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
03/17/2005US20050056843 Semiconductor device and its manufacturing method
03/17/2005US20050056842 Semiconductor device and method of manufacturing thereof
03/17/2005US20050056841 Semiconductor display device
03/17/2005US20050056840 Light-emitting device
03/17/2005US20050056839 Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device
03/17/2005US20050056838 Thin film transistor with self-aligned intra-gate electrode
03/17/2005US20050056836 Photovoltaic apparatus
03/17/2005US20050056829 Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity
03/17/2005US20050056828 Semiconductor device and method for manufacturing same
03/17/2005US20050056827 CMOS compatible low band offset double barrier resonant tunneling diode
03/17/2005US20050056825 Field effect devices having a drain controlled via a nanotube switching element
03/17/2005US20050056210 Heterojunction tunneling diodes and process for fabricating same
03/17/2005US20050056096 Acceleration sensor and manufacturing method thereof
03/17/2005US20050056093 Acceleration sensor
03/17/2005DE10337858A1 Production of a trench capacitor in a semiconductor substrate for a DRAM arrangement comprises providing a separating layer on a dielectric layer and forming an inner electrode extending over a collar region and active region
03/17/2005DE10337562A1 Production of a trench capacitor comprises forming a trench in a substrate using a hard mask with a corresponding opening, placing a capacitor dielectric in the trench and over the mask, and further processing
03/17/2005DE10336876A1 Memory cell used in electronic applications comprises a storage layer formed by a material of a gate dielectric and containing nano-crystals or nano-dots
03/17/2005DE10336397A1 Memory array for digital data used in e.g. low power-, mobile, ubiquitous-, boot-free computing, employs storage field effect transistors in memory cells
03/17/2005DE10335813A1 IC-Chip mit Nanowires IC chip with nanowires
03/17/2005DE102004037186A1 Verfahren zur Verbesserung elektrischer Eigenschaften aktiver Bipolarbauelemente A method for improving the electrical properties of active bipolar
03/17/2005DE102004036330A1 Integriertes Fet- und Schottky-Bauelement Integrated fats and Schottky device
03/17/2005DE102004030848A1 LDMOS-Transistor-Vorrichtung, integrierter Schaltkreis und Verfahren zur Herstellung dieser LDMOS transistor device, integrated circuit and methods for producing these
03/17/2005CA2538276A1 Solid state white light emitter and display using same
03/17/2005CA2538077A1 Fabrication of single or multiple gate field plates
03/17/2005CA2537602A1 Superconducting phase-charge qubits
03/17/2005CA2537476A1 Sphere-supported thin film phosphor electroluminescent devices
03/17/2005CA2537198A1 Vertical organic field effect transistor
03/16/2005EP1515378A2 Method of forming electrodes for field effect transistors
03/16/2005EP1515373A2 Photovoltaic apparatus
03/16/2005EP1515372A1 Over charge protection device
03/16/2005EP1515371A2 Semiconductor device comprising a MOS transistor and method of making the same
03/16/2005EP1515364A2 Device package and methods for the fabrication and testing thereof
03/16/2005EP1515343A2 Semiconductor memory device
03/16/2005EP1514838A1 Process for producing nanoparticle and nanoparticle produced by the process
03/16/2005EP1514318A2 Material for a functional layer of an organic electronic component, method for the production thereof, and use thereof
03/16/2005EP1514311A2 Electronic imaging device
03/16/2005EP1514310A1 Doped regions in an soi substrate
03/16/2005EP1514309A1 Deep wordline trench to shield cross coupling between adjacent cells for scaled nand
03/16/2005EP1514308A1 Dense array structure for non-volatile semiconductor memories
03/16/2005EP1514305A2 Semiconductor device and method of manufacturing same
03/16/2005EP1514304A1 Method for the production of an nrom memory cell arrangement
03/16/2005EP1514300A1 Trench-gate semiconductor device and method of manufacturing
03/16/2005EP1514298A1 Method for producing a spacer structure
03/16/2005EP1514123A1 Monolithic silicon acceleration sensor
03/16/2005EP1514122A2 Method of manufacturing of a monolithic silicon acceleration sensor
03/16/2005EP1514110A2 An apparatus and method for two-dimensional electron gas actuation and transduction for gaas nems
03/16/2005EP1454349A4 Trilayered beam mems device and related methods
03/16/2005EP1442161B1 Method of eliminating voids in w plugs
03/16/2005EP1210736A4 Double recessed transistor
03/16/2005EP1108203B1 Micromechanical component protected against environmental influences
03/16/2005EP1049936B1 An arrangement for measuring angular velocity
03/16/2005CN2686095Y Electrooptical apparatus and semiconductor device
03/16/2005CN2685924Y Reflective photoelectric apparatus and electronic equipment
03/16/2005CN1596477A Group-III nitride based high electron mobility transistor (hemt) with barrier/spacer layer
03/16/2005CN1596464A Semiconductor device and method for manufacturing semiconductor device
03/16/2005CN1596463A Capacitor and method for producing a capacitor
03/16/2005CN1596460A Transistor metal gate structure that minimizes non-planarity effects and method of formation
03/16/2005CN1596459A Method of forming nanocrystals
03/16/2005CN1595677A Solution deposition of chalcogenide films
03/16/2005CN1595673A The improvement of the luminescent efficiency of semiconductor nanocrystals by surface treatment
03/16/2005CN1595667A Photovoltaic apparatus
03/16/2005CN1595663A Wafer type diode capable of surface mounting
03/16/2005CN1595662A Polycrystalline SiTFT of multi-grid double-channel structure
03/16/2005CN1595661A Multi electric potential field plate lateral high voltage N type MOS transistor
03/16/2005CN1595660A A body silicon MOS transistor and manufacturing method thereof
03/16/2005CN1595659A Semiconductor electron device
03/16/2005CN1595658A Amorphous carbon membrane/n type silicon bidirectional voltage induction switch
03/16/2005CN1595641A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
03/16/2005CN1595625A Method for reduced N+ diffusion in strained Si on SiGe substrate
03/16/2005CN1595622A Method for reducing reversal recovery time of ultrafast, express, fast plastic packaging diode
03/16/2005CN1595614A Method for forming metal single-layer film, method for forming wiring, and method for producing field effect transistors
03/16/2005CN1595612A Manufacturing method for semiconductor device
03/16/2005CN1595611A Manufacturing method for semiconductor device
03/16/2005CN1595610A Manufacturing method for semiconductor device
03/16/2005CN1595609A Manufacturing method for semiconductor device
03/16/2005CN1595606A Apparatus used for manufacturing semiconductor device, method of manufacturing the semiconductor devices, and semiconductor device manufactured by the apparatus and method
03/16/2005CN1595534A Nonvolatile semiconductor memory device