| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/17/2005 | US20050035423 Electronic device with guard ring |
| 02/17/2005 | US20050035417 Dual metal-alloy nitride gate electrodes |
| 02/17/2005 | US20050035416 Semiconductor device with improved protection from electrostatic discharge |
| 02/17/2005 | US20050035415 Multiple-gate transistors formed on bulk substrates |
| 02/17/2005 | US20050035414 Multi-bit rom cell with bi-directional read and a method for making thereof |
| 02/17/2005 | US20050035413 Semiconductor device and method of manufacturing a semiconductor device |
| 02/17/2005 | US20050035412 Semiconductor fabrication process, lateral PNP transistor, and integrated circuit |
| 02/17/2005 | US20050035410 Semiconductor diode with reduced leakage |
| 02/17/2005 | US20050035409 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
| 02/17/2005 | US20050035408 Methods of fabricating a dielectric plug in MOSFETs to suppress short-channel effects |
| 02/17/2005 | US20050035407 Semiconductor devices and methods of fabricating the same |
| 02/17/2005 | US20050035406 Semiconductor high-voltage devices |
| 02/17/2005 | US20050035405 Vertical power semiconductor component |
| 02/17/2005 | US20050035404 High voltage transistor and method of manufacturing the same |
| 02/17/2005 | US20050035402 Trench MOSFET with increased channel density |
| 02/17/2005 | US20050035401 Semiconductor device manufacturing method |
| 02/17/2005 | US20050035400 Semiconductor device |
| 02/17/2005 | US20050035399 Semiconductor device |
| 02/17/2005 | US20050035398 Trench MOSFET with recessed clamping diode |
| 02/17/2005 | US20050035397 Semiconductor device |
| 02/17/2005 | US20050035396 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures |
| 02/17/2005 | US20050035394 Nonvolatile semiconductor device with floating gate structure |
| 02/17/2005 | US20050035393 Split-gate non-volatile memory |
| 02/17/2005 | US20050035391 Multi-structured Si-fin and method of manufacture |
| 02/17/2005 | US20050035390 Structure and method of making an enhanced surface area capacitor |
| 02/17/2005 | US20050035389 Dynamic random access memory trench capacitors |
| 02/17/2005 | US20050035388 Multi-bit memory unit and fabrication method thereof |
| 02/17/2005 | US20050035380 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer |
| 02/17/2005 | US20050035379 Semiconductor device structured to prevent oxide damage during HDP CVD |
| 02/17/2005 | US20050035378 MOS transistor and method of manufacturing the same |
| 02/17/2005 | US20050035375 Solid-state imaging device and method for manufacturing the same |
| 02/17/2005 | US20050035371 Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
| 02/17/2005 | US20050035370 Semiconductor structure for a heterojunction bipolar transistor and a method of making same |
| 02/17/2005 | US20050035369 Structure and method of forming integrated circuits utilizing strained channel transistors |
| 02/17/2005 | US20050035368 RSFQ Batcher-banyan switching network |
| 02/17/2005 | US20050035367 Nanotube-based switching elements |
| 02/17/2005 | US20050035364 Opposed terminal structure having a nitride semiconductor element |
| 02/17/2005 | US20050035359 Semiconductor device and semiconductor substrate, and method of fabricating the same |
| 02/17/2005 | US20050035352 Thin film semiconductor element and method of manufacturing the same |
| 02/17/2005 | US20050035350 Thin film transistor liquid crystal display and manufacturing method thereof |
| 02/17/2005 | US20050035348 Bottom gate-type thin-film transistor and method for manufacturing the same |
| 02/17/2005 | US20050035345 Semiconductor device with high-k gate dielectric |
| 02/17/2005 | US20050035344 Isolation structure for deflectable nanotube elements |
| 02/17/2005 | US20050035343 Gate shorted to body thin film transistor, manufacturing method thereof, and display including the same |
| 02/17/2005 | US20050035000 Positioning microelecrtrons substrate between electrodes; polishing; removal electroconductive materials; detecting signals |
| 02/17/2005 | US20050034999 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
| 02/17/2005 | US20050034888 Encapsulated component which is small in terms of height and method for producing the same |
| 02/17/2005 | US20050034834 Method for manufacturing golf club head |
| 02/17/2005 | US20050034821 Method and apparatus for separating member |
| 02/17/2005 | US20050034653 Polycrystalline tft uniformity through microstructure mis-alignment |
| 02/17/2005 | DE19745387B4 Halbleiter-Beschleunigungserfassungsvorrichtung Semiconductor acceleration detecting device |
| 02/17/2005 | DE10359493A1 Integrationsverfahren für eine Halbleitervorrichtung mit einer vertieften Gate-Elektrode Integration process for a semiconductor device with a recessed gate electrode |
| 02/17/2005 | DE10352641A1 Charge-trapping memory cell especially SONOS- and NROM- storage cells, has memory layer sequence for charge-trapping with memory zone between confinement layers |
| 02/17/2005 | DE10334353A1 Verfahren zur Herstellung eines Kontaktes und elektronisches Bauelement, umfassend derartige Kontakte A process for preparing a contact and an electronic device comprising such contacts |
| 02/17/2005 | DE10330571A1 Vertikales Leistungshalbleiterbauelement Vertical power semiconductor component |
| 02/17/2005 | DE10330359A1 Verfahren zur Herstellung von InP-basierten Heterostruktur-Bipolartransistoren auf der Grundlage von III/V-Halbleitern A process for the production of InP-based heterostructure bipolar transistors on the basis of III / V semiconductors |
| 02/17/2005 | DE10306076B4 Quantenpunkt aus elektrisch leitendem Kohlenstoff, Verfahren zur Herstellung und Anwendung Quantum point of electrically conducting carbon, process for the preparation and application |
| 02/17/2005 | DE10250175B4 Leistungstransistor Power transistor |
| 02/17/2005 | DE102004028716A1 Halbleitervorrichtung Semiconductor device |
| 02/17/2005 | DE102004003597A1 Nichtflüchtige Halbleiterspeichervorrichtung A non-volatile semiconductor memory device |
| 02/17/2005 | DE10162242B4 Leistungshalbleiterbauelement für beispielsweise Halbbrückenschaltungen Power semiconductor component for example, half-bridge circuits |
| 02/16/2005 | EP1507294A2 Semiconductor device with surrounding gate |
| 02/16/2005 | EP1507293A1 Method for forming quantum dot, quantum semiconductor device, and its manufacturing method |
| 02/16/2005 | EP1507287A2 Method for implanting ions into semiconductor substrate |
| 02/16/2005 | EP1507286A2 Formation process under a thin layer of a first material from portions of another material and/or from vacuum gaps |
| 02/16/2005 | EP1507285A2 Capacitor of semiconductor device and memory device using the same |
| 02/16/2005 | EP1507267A1 Wiring material and wiring board using the same |
| 02/16/2005 | EP1506583A2 A low-forward-voltage molecular rectifier |
| 02/16/2005 | EP1506580A1 Floating gate memory cells with increased coupling ratio |
| 02/16/2005 | EP1506579A2 Schottky barrier cmos device and method |
| 02/16/2005 | EP1506574A1 Method of manufacturing a semiconductor non-volatile memory |
| 02/16/2005 | EP1506573A1 Ultra small thin windows in floating gate transistors defined by lost nitride spacers |
| 02/16/2005 | EP1506392A1 Method for producing a hybrid organic silicon field effect transistor structure |
| 02/16/2005 | EP0860027B1 Charge coupled device, and method of manufacturing such a device |
| 02/16/2005 | CN1582506A Substituted pentacene semiconductors |
| 02/16/2005 | CN1582505A Organic thin film transistor with siloxane polymer interface |
| 02/16/2005 | CN1582500A Trench DMOS device with improved drain contact |
| 02/16/2005 | CN1582499A High K dielectric film and method for making |
| 02/16/2005 | CN1582498A Non-volatile memory, method of manufacture, and method of programming |
| 02/16/2005 | CN1582497A 浪涌保护半导体装置 Surge protection of semiconductor devices |
| 02/16/2005 | CN1582493A Double densed core gates in SONOS flash memory |
| 02/16/2005 | CN1582486A Semiconductor device and method for fabricating same |
| 02/16/2005 | CN1582413A 有源矩阵像素器件 Active matrix pixel devices |
| 02/16/2005 | CN1582345A Method of eliminating voids in W plugs |
| 02/16/2005 | CN1582334A Potentionmetric DNA microarray, Process for producing same and method of analyzig nucleuic acid |
| 02/16/2005 | CN1582092A Method for forming wire-layout pattern and method for making semiconductor device and photoelectronic device |
| 02/16/2005 | CN1581528A Semiconductor device having superlattice semiconductor layer and method of manufacturing the same |
| 02/16/2005 | CN1581526A Semiconductor device and making method |
| 02/16/2005 | CN1581514A Grid shortbreak transistor, its making method and relative display device |
| 02/16/2005 | CN1581513A Thin film electrocystal and picture element structure having same |
| 02/16/2005 | CN1581512A Control of carrier density of semimetal field effect tube channel material using ion beam modifying technique |
| 02/16/2005 | CN1581511A Grid structure and metal-oxide semiconductor tube structure comprising same and its manufacturing method |
| 02/16/2005 | CN1581510A Integrated field effect transistor and schottky device |
| 02/16/2005 | CN1581509A Metal oxide semiconductor transistor with 3-D channels and its making method |
| 02/16/2005 | CN1581507A 半导体装置 Semiconductor device |
| 02/16/2005 | CN1581506A Vertical semiconductor device and manufacturing method thereof |
| 02/16/2005 | CN1581505A Semi-conductor diode with reduced leakage |
| 02/16/2005 | CN1581504A Cell structure for bipolar integrated circuits and method |
| 02/16/2005 | CN1581498A Solid picture sensor and its making method |
| 02/16/2005 | CN1581492A Memory unit with nano crystal and nano point |