Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2005
03/22/2005US6869824 Fabrication method of window-type ball grid array semiconductor package
03/22/2005US6869823 Cerdip type of solid-state image sensing device, structure and method for gripping cerdip type of solid-state image sensing device
03/22/2005US6869752 Forming a high melting-point metal on an SOI (Silicon-on-Insulator) layer; transforming a layer of the high melting-point metal into a metal silicide layer by heat treatment; forming an interlayer insulating film; dry etching
03/22/2005US6869638 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
03/22/2005US6869581 Hollow graphene sheet structure, electrode structure, process for the production thereof, and device thus produced
03/22/2005US6868733 Sensor having membrane and method for manufacturing the same
03/22/2005CA2268997C Quantum dot infrared photodetectors (qdip) and methods of making the same
03/19/2005CA2482058A1 Method of fabricating semiconductor components through implantation and diffusion in a semiconductor substrate
03/19/2005CA2481834A1 Dmos-transistor with lateral dopant gradient in drift region and method of producing the same
03/17/2005WO2005024960A1 Solid state white light emitter and display using same
03/17/2005WO2005024957A1 Semiconductor device and method for manufacturing same
03/17/2005WO2005024956A1 Electrode substrate, thin-film transistor, display, and its production method
03/17/2005WO2005024955A1 Semiconductor device
03/17/2005WO2005024954A1 Semiconductor component and method of manufacturing same
03/17/2005WO2005024953A1 An enhanced gate structure
03/17/2005WO2005024952A2 Quantum dot optoelectronic devices with nanoscale epitaxial overgrowth and methods of manufacture
03/17/2005WO2005024951A1 Sphere-supported thin film phosphor electroluminescent devices
03/17/2005WO2005024931A1 Semiconductor device and its manufacturing method
03/17/2005WO2005024930A2 Method for producing a semiconductor component with a praseodymium oxide dielectric
03/17/2005WO2005024924A1 Process for producing semiconductor device
03/17/2005WO2005024909A2 Fabrication of single or multiple gate field plates
03/17/2005WO2005024907A2 Vertical organic field effect transistor
03/17/2005WO2005024906A2 Structure and method for metal replacement gate of high performance device
03/17/2005WO2005024903A2 Method and structure for improving the gate resistance of a closed cell trench power mosfet
03/17/2005WO2005024900A2 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
03/17/2005WO2005024899A2 Method to produce transistor having reduced gate height
03/17/2005WO2005024856A2 Method and system for providing a magnetic element including passivation structures
03/17/2005WO2005024716A1 Superconducting phase-charge qubits
03/17/2005WO2005023702A1 Metal nanoparticle and method for producing same, liquid dispersion of metal nanoparticle and method for producing same, metal thin line, metal film and method for producing same
03/17/2005WO2005023700A2 Nanoelectonic devices based on nanowire networks
03/17/2005WO2004112104A3 Low temperature process for tft fabrication
03/17/2005WO2004112042A3 Non-volatile memory device
03/17/2005WO2004107452B1 Semiconductor device and method for manufacturing same
03/17/2005WO2004102671A8 Power device with high switching speed and manufacturing method thereof
03/17/2005US20050059777 Fumaric acid diester resin; good optical characteristics, heat resistance and mechanical properties
03/17/2005US20050059260 CMOS transistors and methods of forming same
03/17/2005US20050059259 Interfacial oxidation process for high-k gate dielectric process integration
03/17/2005US20050059252 Self-aligned planar double-gate process by self-aligned oxidation
03/17/2005US20050059239 Foreign material removing method for capacitance type dynamic quantity sensor
03/17/2005US20050059237 Method for manufacturing semiconductor device
03/17/2005US20050059228 Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
03/17/2005US20050059227 Thin film transistor and fabrication method for same
03/17/2005US20050059225 Method of monitoring introduction on interfacial species
03/17/2005US20050059222 Method of forming polycrystalline semiconductor layer and thin film transistor using the same
03/17/2005US20050059220 Semiconductor device and method of manufacturing the same
03/17/2005US20050059219 Process for fabricating a thin film semiconductor device, thin film semiconductor device, and liquid crystal display
03/17/2005US20050059216 Method of making direct contact on gate by using dielectric stop layer
03/17/2005US20050059214 Method and structure of vertical strained silicon devices
03/17/2005US20050059213 Semiconductor device with nanoclusters
03/17/2005US20050059212 Nonvolatile semiconductor memory device and its manufacturing method
03/17/2005US20050059211 Method of manufacturing semiconductor device
03/17/2005US20050059209 Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
03/17/2005US20050059202 Silicon on insulator device and layout method of the same
03/17/2005US20050059199 Semiconductor device and manufacturing method thereof
03/17/2005US20050059198 Metal gate MOS transistors and methods for making the same
03/17/2005US20050059197 Semiconductor device and method for manufacturing the same
03/17/2005US20050059195 Manufacturing method for a power device having an auto-aligned double thickness gate layer and corresponding device
03/17/2005US20050059194 Method of forming double-gated silicon-on-insulator (SOI) transistors with corner rounding
03/17/2005US20050059193 Method for forming metal single-layer film, method for forming wiring, and method for producing field effect transistors
03/17/2005US20050059190 Method of fabricating thin film transistor TFT array
03/17/2005US20050059187 Non-volatile memory structure
03/17/2005US20050059172 Fabrication method and structure for ferroelectric nonvolatile memory field effect transistor
03/17/2005US20050059170 Magnetic random access memory designs with patterned and stabilized magnetic shields
03/17/2005US20050058416 Optical devices with engineered nonlinear nanocomposite materials
03/17/2005US20050058415 Optical devices with engineered nonlinear nanocomposite materials
03/17/2005US20050058011 Non-volatile semiconductor memory device, electronic card and electronic device
03/17/2005US20050057986 Magnetic spin based memory with inductive write lines
03/17/2005US20050057971 Flash memory cell having multi-program channels
03/17/2005US20050057968 Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
03/17/2005US20050057964 Memory with charge storage locations and adjacent gate structures
03/17/2005US20050057856 Head assembly, disk unit, and bonding method and apparatus
03/17/2005US20050057478 Display device
03/17/2005US20050057460 Organic electroluminescent display device
03/17/2005US20050057288 Semiconductor device with pump circuit
03/17/2005US20050057136 Electrode, method for forming an electrode, thin-film transistor, electronic circuit, organic electroluminescent element, display, and electronic equipment
03/17/2005US20050056935 Semiconductor devices having a pocket line and methods of fabricating the same
03/17/2005US20050056934 Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method
03/17/2005US20050056912 Semiconductor device
03/17/2005US20050056911 Semiconductor-on-insulator constructions
03/17/2005US20050056910 Non-volatile memory structure
03/17/2005US20050056909 Chip diode for surface mounting
03/17/2005US20050056908 Semiconductor device and method of manufacturing the same
03/17/2005US20050056907 Power transistor and semiconductor integrated circuit using the same
03/17/2005US20050056906 Semiconductor device
03/17/2005US20050056905 Semiconductor device, photoelectric conversion device and method of manufacturing same
03/17/2005US20050056903 Semiconductor package and method of manufacturing same
03/17/2005US20050056900 Method and structure for forming high-k gates
03/17/2005US20050056899 Semiconductor device having an insulating layer and method for forming
03/17/2005US20050056897 Semiconductor device and manufacturing method thereof
03/17/2005US20050056896 Electrostatic discharge protection device with complementary dual drain implant
03/17/2005US20050056894 Semiconductor-on-insulator constructions
03/17/2005US20050056893 Vertical compound semiconductor field effect transistor structure
03/17/2005US20050056892 Fully-depleted castellated gate MOSFET device and method of manufacture thereof
03/17/2005US20050056890 Offset-gate-type semiconductor device
03/17/2005US20050056889 LDMOS transistor
03/17/2005US20050056888 Double gate field effect transistor and method of manufacturing the same
03/17/2005US20050056886 Semiconductor arrangement having a MOSFET structure and a zener device
03/17/2005US20050056885 Dual poly layer and method of manufacture
03/17/2005US20050056884 Semiconductor memory element, semiconductor device and control method thereof
03/17/2005US20050056883 Method to improve flash forward tunneling voltage (FTV) performance