Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2005
03/30/2005CN2689460Y Overvoltage protectors
03/30/2005CN1602552A Diode circuit and method for making same
03/30/2005CN1602551A Semiconductor device and method for manufacturing same
03/30/2005CN1602544A Method for making high voltage MOS transistor by ion implantation
03/30/2005CN1602121A Top lighting organic electroluminescent display device
03/30/2005CN1601771A Semiconductor light emitting device and manufacturing method for the same
03/30/2005CN1601757A High frequncy diode
03/30/2005CN1601756A 半导体装置及其制造方法 Semiconductor device and manufacturing method
03/30/2005CN1601755A Signal processing apparatus
03/30/2005CN1601754A Semiconductor device and method for fabricating the same
03/30/2005CN1601751A Trough insulation voltage durable layer in SOI power element
03/30/2005CN1601750A 静态随机存取存储器 Static random access memory
03/30/2005CN1601749A Semiconductor integrated circuit device contg. nonvolatile semiconductor storage
03/30/2005CN1601747A Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
03/30/2005CN1601725A CMOS and its forming method
03/30/2005CN1601723A Method for improving electrical property of inner connecting line structure
03/30/2005CN1601709A Method for fabricating a mosfet and reducing line width of gate structure
03/30/2005CN1601701A Method for fabricating SIGE substrate materials on metastable insulator and substrate materials
03/30/2005CN1601700A Method of fabricating crystalline silicon and switching device using crystalline silicon
03/30/2005CN1601699A Strained silicon on relaxed SiGe film with uniform misfit dislocation density
03/30/2005CN1601650A Nonvolatile semiconductor memory device and manufacturing method thereof
03/30/2005CN1601579A Display panel and method for manufacturing the same
03/30/2005CN1601371A Solid luminous element, its mfg.method and projector
03/30/2005CN1601363A Semiconductor device capable of suppressing variation of current or voltage to be supplied to external circuit
03/30/2005CN1601362A Liquid crystal display and panel therefor
03/30/2005CN1601360A Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device
03/30/2005CN1601345A Method of mfg, LCD device and LCD panel
03/30/2005CN1601343A Electro-optical device, method for making the same, and electronic apparatus
03/30/2005CN1601340A Liquid crystal display device and method for driving the same
03/30/2005CN1601336A Electrooptic device and electonic equipment
03/29/2005US6873828 Compound semiconductor switching device for high frequency switching
03/29/2005US6873545 Hybrid semiconductor-magnetic device and method of operation
03/29/2005US6873539 Semiconductor device
03/29/2005US6873392 Array substrate for liquid crystal display device and method of manufacturing the same
03/29/2005US6873388 Substrate for liquid crystal display, liquid crystal display having the same, and method of manufacturing the same
03/29/2005US6873379 Fabricating method of an array substrate having polysilicon thin film transistor
03/29/2005US6873273 Photonic serial digital-to-analog converter employing a heterojunction thyristor device
03/29/2005US6873098 Control circuits; contact barrier; transistors; connecting metal contactors; aperture injection barrier
03/29/2005US6873051 Nickel silicide with reduced interface roughness
03/29/2005US6873048 System and method for integrating multiple metal gates for CMOS applications
03/29/2005US6873044 Microwave monolithic integrated circuit package
03/29/2005US6873030 Metal gate electrode using silicidation and method of formation thereof
03/29/2005US6873029 Self-aligned bipolar transistor
03/29/2005US6873025 Photodiode device including window defined in passivation layer for removing electrostatic charge
03/29/2005US6873022 Semiconductor device and method for manufacturing the same
03/29/2005US6873021 MOS transistors having higher drain current without reduced breakdown voltage
03/29/2005US6873020 High/low work function metal alloys for integrated circuit electrodes
03/29/2005US6873019 Semiconductor device including memory cells and manufacturing method thereof
03/29/2005US6873018 Memory cell constructions comprising integrated bipolar and FET devices
03/29/2005US6873017 ESD protection for semiconductor products
03/29/2005US6873016 Semiconductor device and method of forming the same
03/29/2005US6873015 Semiconductor constructions comprising three-dimensional thin film transistor devices and resistors
03/29/2005US6873014 Semiconductor device and method of manufacturing the same
03/29/2005US6873013 Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering
03/29/2005US6873012 SOI component
03/29/2005US6873011 High voltage and low on-resistance LDMOS transistor having equalized capacitance
03/29/2005US6873009 Vertical semiconductor device with tunnel insulator in current path controlled by gate electrode
03/29/2005US6873007 Nonvolatile semiconductor memory device and process for producing the same
03/29/2005US6873006 Semiconductor memory array of floating gate memory cells with burried floating gate and pointed channel region
03/29/2005US6873005 Programmable memory devices supported by semiconductor substrates
03/29/2005US6873004 Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof
03/29/2005US6873003 Nonvolatile memory cell
03/29/2005US6873001 Reduced size plate layer improves misalignments for CUB DRAM
03/29/2005US6872994 Semiconductor device having an active region whose width varies
03/29/2005US6872989 Semiconductor device and method for fabricating the same
03/29/2005US6872987 Silicon controlled rectifier ESD structures with trench isolation
03/29/2005US6872986 Nitride semiconductor device
03/29/2005US6872980 Organic thin film transistor array substrate
03/29/2005US6872978 CMOS-type thin film semiconductor device and method of fabricating the same
03/29/2005US6872977 Thin film semiconductor device, production process and information displays
03/29/2005US6872975 Electro-optical device and electronic equipment
03/29/2005US6872974 Low threshold voltage instability amorphous silicon field effect transistor structure and biasing for active matrix organic light-emitting diodes
03/29/2005US6872972 Method for forming silicon film with changing grain size by thermal process
03/29/2005US6872969 Non-volatile memory device and matrix display panel using the same
03/29/2005US6872966 Optical semiconductor device
03/29/2005US6872910 Laser irradiation apparatus and method of fabricating a semiconductor device
03/29/2005US6872801 Polythiophenes and devices thereof
03/29/2005US6872664 Dual gate nitride process
03/29/2005US6872658 Method of fabricating semiconductor device by exposing resist mask
03/29/2005US6872653 Manufacturing method of semiconductor device
03/29/2005US6872647 Method for forming multiple fins in a semiconductor device
03/29/2005US6872642 Manufacturing method of semiconductor device
03/29/2005US6872641 Strained silicon on relaxed sige film with uniform misfit dislocation density
03/29/2005US6872640 SOI CMOS device with reduced DIBL
03/29/2005US6872639 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
03/29/2005US6872628 Method of manufacturing semiconductor device
03/29/2005US6872627 Selective formation of metal gate for dual gate oxide application
03/29/2005US6872625 Field-effect transistor based on embedded cluster structures and process for its production
03/29/2005US6872624 Method of fabricating nonvolatile semiconductor memory device
03/29/2005US6872623 Floating gate and fabricating method thereof
03/29/2005US6872614 Nonvolatile semiconductor memory device and process of production and write method thereof
03/29/2005US6872613 Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure
03/29/2005US6872611 Method of manufacturing transistor
03/29/2005US6872610 Method for preventing polysilicon mushrooming during selective epitaxial processing
03/29/2005US6872607 Method of manufacturing a semiconductor device
03/29/2005US6872606 Semiconductor device with raised segment
03/29/2005US6872604 Method of fabricating a light emitting device
03/29/2005US6872603 Method for forming interconnections including multi-layer metal film stack for improving corrosion and heat resistances
03/29/2005US6872602 Carrier coupler for thyristor-based semiconductor device
03/29/2005US6872588 Method of fabrication of electronic devices using microfluidic channels
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