Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2005
02/22/2005US6858499 Method for fabrication of MOSFET with buried gate
02/22/2005US6858497 Non-volatile semiconductor memory device and a method of producing the same
02/22/2005US6858495 Multi-bit memory unit and fabrication method thereof
02/22/2005US6858494 Structure and fabricating method with self-aligned bit line contact to word line in split gate flash
02/22/2005US6858493 Method of forming a dual-sided capacitor
02/22/2005US6858491 Method of manufacturing the semiconductor device having a capacitor formed in SOI substrate
02/22/2005US6858490 Method for manufacturing merged DRAM with logic device
02/22/2005US6858486 Vertical bipolar transistor formed using CMOS processes
02/22/2005US6858485 Method for creation of a very narrow emitter feature
02/22/2005US6858484 Method of fabricating semiconductor integrated circuit device
02/22/2005US6858483 Integrating n-type and p-type metal gate transistors
02/22/2005US6858480 Method of manufacturing semiconductor device
02/22/2005US6858479 Low resistivity copper conductor line, liquid crystal display device having the same and method for forming the same
02/22/2005US6858478 Tri-gate devices and methods of fabrication
02/22/2005US6858477 Thin film transistors
02/22/2005US6858471 Semiconductor substrate with trenches for reducing substrate resistance
02/22/2005US6858458 Contactless acceleration switch
02/22/2005US6858457 Method of manufacturing acceleration sensor
02/22/2005US6858451 Method for manufacturing a dynamic quantity detection device
02/22/2005US6858444 Method for making a ferroelectric memory transistor
02/22/2005US6858308 Semiconductor element, and method of forming silicon-based film
02/22/2005CA2297037C Semiconductor devices and methods with tunnel contact hole sources
02/17/2005WO2005015650A1 Method of manufacturing micro tunnel-junction circuit and micro tunnel-junction circuit
02/17/2005WO2005015644A1 Body-tied soi transistor and method for fabrication thereof
02/17/2005WO2005015643A1 Semiconductor device having ternary compound channel layer
02/17/2005WO2005015642A1 Semiconductor device and manufacturing method thereof
02/17/2005WO2005015641A1 Biopolar transistor with a low saturation voltage
02/17/2005WO2005015636A1 Semiconductor device
02/17/2005WO2005015629A1 Method for producing a contact and electronic component comprising said type of contact
02/17/2005WO2005015621A1 High-k dielectric film, method of forming the same and related semiconductor device
02/17/2005WO2005015617A1 Semiconductor layer
02/17/2005WO2005015579A2 Methods of forming three-dimensional nanodot arrays in a matrix
02/17/2005WO2005015193A1 Field-effect transistor, sensor using it, and production method thereof
02/17/2005WO2005014889A2 Deposition method for nanostructure materials
02/17/2005WO2005004206A3 Integrated circuit having pairs of parallel complementary finfets
02/17/2005WO2004051707A3 Gallium nitride-based devices and manufacturing process
02/17/2005WO2004030045A8 Semiconductor device processing
02/17/2005US20050038686 Method and system to connect consumers to information
02/17/2005US20050037631 Methods of forming silicon quantum dots and methods of fabricating semiconductor memory devices using the same
02/17/2005US20050037630 Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices
02/17/2005US20050037623 Novel resist protect oxide structure of sub-micron salicide process
02/17/2005US20050037612 Superconductor device and method of manufacturing the same
02/17/2005US20050037603 Method for forming, under a thin layer of a first material, portions of another material and/or empty areas
02/17/2005US20050037600 Method for implanting ions into semiconductor substrate
02/17/2005US20050037593 Process for producing an integrated electronic circuit comprising superposed components and integrated electronic circuit thus obtained
02/17/2005US20050037591 Method for producing a capacitor
02/17/2005US20050037588 Method for manufacturing and structure of semiconductor device with sinker contact region
02/17/2005US20050037587 Heterojunction bipolar transistor
02/17/2005US20050037585 Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same
02/17/2005US20050037583 Semiconductor transistors and methods of fabricating the same
02/17/2005US20050037582 Device threshold control of front-gate silicon-on-insulator mosfet using a self-aligned back-gate
02/17/2005US20050037580 Manufacturing method for semiconductor device
02/17/2005US20050037579 Method of fabricating semiconductor device
02/17/2005US20050037577 Method of fabricating local sonos type gate structure and method of fabricating nonvolatile memory cell having the same
02/17/2005US20050037575 Nonvolatile memory devices and methods of fabricating the same
02/17/2005US20050037574 Semiconductor memory device and manufacturing method thereof
02/17/2005US20050037571 Fowler-Nordheim block alterable EEPROM memory cell
02/17/2005US20050037570 Semiconductor capacitor structure and method to form same
02/17/2005US20050037563 Capacitor structures
02/17/2005US20050037559 Method of manufacturing a semiconductor device
02/17/2005US20050037558 Method for fabricating transistor having fully silicided gate
02/17/2005US20050037557 Transition metal alloys for use as a gate electrode and devices incorporating these alloys
02/17/2005US20050037556 Formation of self-organized stacked islands for self-aligned contacts of low dimensional structures
02/17/2005US20050037555 Semiconductor device having a random grained polysilicon layer and a method for its manufacture
02/17/2005US20050037554 Method for manufacturing semiconductor device
02/17/2005US20050037553 Laser irradiation method, method for manufacturing a semiconductor device, and a semiconductor device
02/17/2005US20050037551 Isotropic polycrystalline silicon and method for producing same
02/17/2005US20050037550 Thin film transistor using polysilicon and a method for manufacturing the same
02/17/2005US20050037549 Semiconductor device and method for forming the same
02/17/2005US20050037548 SOI field effect transistor element having a recombination region and method of forming same
02/17/2005US20050037547 Nanotube device structure and methods of fabrication
02/17/2005US20050037533 Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor
02/17/2005US20050037531 Method for manufacturing micro-structural unit
02/17/2005US20050037530 Floating gate memory structures and fabrication methods
02/17/2005US20050037528 Thin film transistor liquid crystal display and fabrication method thereof
02/17/2005US20050037524 Method of manufacturing semiconductor device having trench isolation
02/17/2005US20050036399 Magneto-resistive random access memory and method for manufacturing the same
02/17/2005US20050036393 Scalable flash EEPROM memory cell with notched floating gate and graded source region, and method of manufacturing the same
02/17/2005US20050036391 Nonvolatile semiconductor memory apparatus and the operation method
02/17/2005US20050036382 Semiconductor memory element, semiconductor memory device and method of fabricating the same
02/17/2005US20050036379 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
02/17/2005US20050036375 Ferroelectric memory and method for fabricating the same
02/17/2005US20050036370 Write once read only memory with large work function floating gates
02/17/2005US20050036366 Semiconductor nonvolatile memory, method of recording data in the semiconductor nonvolatile memory and method of reading data from the semiconductor nonvolatile memory
02/17/2005US20050036365 Nanotube-based switching elements with multiple controls
02/17/2005US20050036353 Nonvolatile semiconductor memory device
02/17/2005US20050036091 Liquid crystal display and panel therefor
02/17/2005US20050036081 Semiconductor device, liquid crystal display device and method of manufacturing the semiconductor device
02/17/2005US20050036080 Thin film transistor, active matrix substrate, display device, and electronic apparatus
02/17/2005US20050036052 Solid-state image pickup device and manufacturing method thereof
02/17/2005US20050035787 Nanotube-based switching elements and logic circuits
02/17/2005US20050035786 Circuits made from nanotube-based switching elements with multiple controls
02/17/2005US20050035469 CSP semiconductor device having signal and radiation bump groups
02/17/2005US20050035455 Device with low-k dielectric in close proximity thereto and its method of fabrication
02/17/2005US20050035432 DC/DC converter using bipolar transistor, method of manufacturing the same and DC power supply module using the same
02/17/2005US20050035431 Semiconductor device and method for manufacturing semiconductor device
02/17/2005US20050035427 MOS transistor with recessed gate and method of fabricating the same
02/17/2005US20050035426 Isolation structure with nitrogen-containing liner and methods of manufacture
02/17/2005US20050035425 Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film
02/17/2005US20050035424 Lateral MOSFET structure of an integrated circuit having separated device regions