Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2005
04/12/2005US6879012 Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
04/12/2005US6879011 Magnetically shielded circuit board
04/12/2005US6879006 MOS transistor and method for fabricating the same
04/12/2005US6879005 High withstand voltage semiconductor device
04/12/2005US6879003 Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof
04/12/2005US6879002 Semiconductor device having an SOI substrate
04/12/2005US6879001 Semiconductor device and manufacturing method of semiconductor device
04/12/2005US6878999 Transistor with improved safe operating area
04/12/2005US6878998 Semiconductor device with region that changes depth across the direction of current flow
04/12/2005US6878997 Compensation component and method for fabricating the component
04/12/2005US6878996 MOS power transistor
04/12/2005US6878995 Cmos-compatible lateral dmos transistor and method for producing such a transistor
04/12/2005US6878994 MOSgated device with accumulated channel region and Schottky contact
04/12/2005US6878993 Self-aligned trench MOS junction field-effect transistor for high-frequency applications
04/12/2005US6878992 Vertical-type power MOSFET with a gate formed in a trench
04/12/2005US6878991 Vertical device 4F2 EEPROM memory
04/12/2005US6878990 Vertical transistor and method of manufacturing thereof
04/12/2005US6878989 Power MOSFET semiconductor device and method of manufacturing the same
04/12/2005US6878988 Non-volatile memory with induced bit lines
04/12/2005US6878987 Split gate memory device
04/12/2005US6878986 Embedded flash memory cell having improved programming and erasing efficiency
04/12/2005US6878985 Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode
04/12/2005US6878984 Non-volatile flash memory having a specific difference between source/floating gate and drain/floating gate overlapped portions
04/12/2005US6878983 High performance varactor diodes
04/12/2005US6878979 Spin switch and magnetic storage element using it
04/12/2005US6878976 Carbon-modulated breakdown voltage SiGe transistor for low voltage trigger ESD applications
04/12/2005US6878975 Polarization field enhanced tunnel structures
04/12/2005US6878974 Visible light emitting diodes fabricated from soluble semiconducting polymers
04/12/2005US6878968 Semiconductor device
04/12/2005US6878967 Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus
04/12/2005US6878966 Thin-film transistor display devices
04/12/2005US6878962 Semiconductor device
04/12/2005US6878959 Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
04/12/2005US6878640 Method for fabricating silicon targets
04/12/2005US6878618 Compositionally modified resistive electrode
04/12/2005US6878610 Relaxed silicon germanium substrate with low defect density
04/12/2005US6878607 Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
04/12/2005US6878606 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium
04/12/2005US6878605 Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate
04/12/2005US6878603 Process for manufacturing a DMOS transistor
04/12/2005US6878599 Semiconductor device and method of manufacturing the same
04/12/2005US6878596 Method of forming high voltage junction in semiconductor device
04/12/2005US6878594 Semiconductor device having an insulation film with reduced water content
04/12/2005US6878593 Metal oxide semiconductor heterostructure field effect transistor
04/12/2005US6878592 Selective epitaxy to improve silicidation
04/12/2005US6878589 Method and system for improving short channel effect on a floating gate device
04/12/2005US6878588 Method for fabricating a flash memory cell
04/12/2005US6878586 Semiconductor memory device
04/12/2005US6878583 Integration method to enhance p+ gate activation
04/12/2005US6878582 Low-GIDL MOSFET structure and method for fabrication
04/12/2005US6878580 Semiconductor device having gate with negative slope and method for manufacturing the same
04/12/2005US6878579 Semiconductor device and method of manufacturing the same
04/12/2005US6878578 Method for forming a high quality chemical oxide on a freshly cleaned silicon surface as a native oxide replacement
04/12/2005US6878577 Method of forming LDD of semiconductor devices
04/12/2005US6878576 Method for making semiconductor device including band-engineered superlattice
04/12/2005US6878575 Method of forming gate oxide layer in semiconductor devices
04/12/2005US6878570 Thin stacked package and manufacturing method thereof
04/12/2005US6878566 Method of reinforcing a mechanical microstructure
04/12/2005US6878415 Reacting a doped surface layer to form a dielectric film, a metal film or a silicide film having a thickness of 50 angstroms or less.
04/07/2005WO2005031890A1 Process for laminating a dielectric layer onto a semiconductor
04/07/2005WO2005031877A1 A hybrid bipolar-mos trench gate semiconductor device
04/07/2005WO2005031876A1 Lateral thin-film soi device having a field plate with isolated metallic regions
04/07/2005WO2005031873A1 An electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
04/07/2005WO2005031859A1 2-transistor memory cell and method for manufacturing
04/07/2005WO2005031845A1 Field-effect transistors with weakly coupled layered inorganic semiconductors
04/07/2005WO2005031840A1 Method for the elimination of the effects of defects on wafers
04/07/2005WO2005031833A1 Oxide-nitride stack gate dielectric
04/07/2005WO2005031827A2 Semiconductor channel on insulator structure
04/07/2005WO2005031809A2 The production of a germanium oxynitride layer on a ge-based material
04/07/2005WO2005031754A1 Nonvolatile semiconductor memory device having protection function for each memory block
04/07/2005WO2005030635A1 Surface micromachined mems device with structure and circuitry
04/07/2005WO2005008744A3 A transistor device with metallic electrodes and a method for use in forming such a device
04/07/2005WO2004038785A8 Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor
04/07/2005US20050074987 Method of manufacturing semiconductor device
04/07/2005US20050074984 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
04/07/2005US20050074982 Dielectric layer for semiconductor device and method of manufacturing the same
04/07/2005US20050074978 High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
04/07/2005US20050074972 Semiconductor device and method of manufacturing the same
04/07/2005US20050074970 Mis hydrogen sensors
04/07/2005US20050074969 Contact structure of semiconductor device and method of forming the same
04/07/2005US20050074963 Fabrication method of a semiconductor device
04/07/2005US20050074962 Lithography-independent fabrication of small openings
04/07/2005US20050074957 Methods for manufacturing stacked gate structure and field effect transistor povided with the same
04/07/2005US20050074942 Amorphizing ion implant method for forming polysilicon emitter bipolar transistor
04/07/2005US20050074941 Method of manufacturing semiconductor device
04/07/2005US20050074939 Process to manufacture nonvolatile MOS memory device
04/07/2005US20050074937 Method for fabricating flash memory device
04/07/2005US20050074932 Dual fully-silicided gate mosfets
04/07/2005US20050074931 Method of manufacturing metal-oxide-semiconductor transistor
04/07/2005US20050074930 Method of forming poly-silicon thin film transistors
04/07/2005US20050074928 Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
04/07/2005US20050074926 Method of making non-volatile field effect devices and arrays of same
04/07/2005US20050074914 Semiconductor device and method of fabrication the same
04/07/2005US20050074627 Ceramic substrate for thin film electronic component, production method for the same and thin film electronic component using the same
04/07/2005US20050073638 Liquid crystal display device and method for fabricating the same
04/07/2005US20050073620 Active matrix substrate and display device having the same
04/07/2005US20050073264 Organic EL panel
04/07/2005US20050073248 Display device and method of its manufacture
04/07/2005US20050073243 Light emitting device and method of manufacturing the same
04/07/2005US20050073242 EL display device, driving method thereof, and electronic equipment provided with the display device