| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/14/2005 | US20050077536 Nitride semiconductor light emitting device and method of manufacturing the same |
| 04/14/2005 | US20050077535 LED and its manufacturing process |
| 04/14/2005 | US20050077528 Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof |
| 04/14/2005 | US20050077527 Method for forming an electrostatically-doped carbon nanotube device |
| 04/14/2005 | US20050077525 LED luminaire |
| 04/14/2005 | US20050077523 Thin film transistor substrate for display device and fabricating method thereof |
| 04/14/2005 | US20050077521 Thin film transistor array substrate and method of manufacturing the same |
| 04/14/2005 | US20050077520 Semiconductor device and electronic device |
| 04/14/2005 | US20050077519 Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics |
| 04/14/2005 | US20050077518 Method of manufacturing a semiconductor method of manufacturing a thin-film transistor and thin-film transistor |
| 04/14/2005 | US20050077512 Nitride semiconductors on silicon substrate and method of manufacturing the same |
| 04/14/2005 | US20050077511 Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits |
| 04/14/2005 | US20050077510 Structure for and method of fabricating a high-mobility field-effect transistor |
| 04/14/2005 | DE19904103B4 IGBT mit verbesserter Durchlaßspannung IGBT with improved on-state voltage |
| 04/14/2005 | DE19649686B4 Struktur und Herstellungsverfahren eines Hochspannungs-Metalloxid-Silizium-Feldeffekttransistors (MOSFET) Structure and manufacturing method of a high voltage metal-oxide-silicon field effect transistor (MOSFET) |
| 04/14/2005 | DE19543859B4 Transistor und Transistorherstellungsverfahren Transistor and transistor fabrication process |
| 04/14/2005 | DE10345347A1 Verfahren zur Herstellung eines DMOS-Transistors mit lateralem Driftregionen-Dotierstoffprofil A process for the preparation of a DMOS transistor with a lateral drift regions dopant- |
| 04/14/2005 | DE10345345A1 Verfahren zur Herstellung von Halbleiterbauelementen in einem Halbleitersubstrat Process for the preparation of semiconductor devices in a semiconductor substrate, |
| 04/14/2005 | DE10344039A1 Electrically programmable non-volatile memory based on threshold-changing MOSFETs comprises charge-storing layer made from hafnium oxynitride compound |
| 04/14/2005 | DE10344038A1 Field effect transistor junction system includes drain electrode with drain zones, gate electrode and channel zone, used in semiconductor technology |
| 04/14/2005 | DE10343083A1 Transistor type semiconductor module for power semiconductor components with several semiconductor functional elements, with several insulated gates is semiconductor structure |
| 04/14/2005 | DE10342559B3 Edge structure of power semiconductor component includes electrically- conducting layer deposited on parts of insulating layer in contact with region between conductivity types. |
| 04/14/2005 | DE10340202A1 Herstellungsverfahren für ein Halbleiterbauelement mit Praseodymoxid-Dielektrikum Manufacturing method of a semiconductor device with praseodymium oxide dielectric |
| 04/14/2005 | DE10340182B3 Verfahren zur Herstellung komplementärer SiGe-Hetero-Bipolartransistoren Process for the preparation of complementary SiGe heterojunction bipolar transistors |
| 04/14/2005 | DE10339488B3 Lateral semiconductor component with at least one field electrode formed in drift zone extending laterally between doped terminal regions |
| 04/14/2005 | DE10317381B4 Vertikaler Leistungstransistor mit niedriger Gate-Drain-Kapazität und Verfahren zu dessen Herstellung Vertical power transistor with a low gate-drain capacitance and process for its preparation |
| 04/14/2005 | DE10252818B4 Halbleitervorrichtung mit Kondensator A semiconductor device having capacitor |
| 04/14/2005 | DE102004025775A1 Oberflächenemissionslasergehäuse, das ein integriertes optisches Element und einen integrierten Ausrichtungspfosten aufweist A surface emitting laser housing having an integrated optical element and an integral alignment posts |
| 04/14/2005 | DE10030381B4 Leistungshalbleiterbauelement aufweisend einen Körper aus Halbleitermaterial mit Übergang zwischen zueinander entgegengesetzten Leiterfähigkeitstypen Power semiconductor device comprising a body of semiconductor material with transition between mutually opposite conductors ability types |
| 04/14/2005 | CA2536154A1 Light emitting diode with porous sic substrate and method for fabricating |
| 04/13/2005 | EP1523078A1 Optical semiconductor device |
| 04/13/2005 | EP1523050A2 Organic thin film transistor enhanced in charge carrier mobility by virtue of surface relief structure |
| 04/13/2005 | EP1523043A2 Semiconductor device and method for manufacturing the same |
| 04/13/2005 | EP1523032A2 Silicon carbide-oxide layered structure, production method thereof, and semiconductor device |
| 04/13/2005 | EP1522105A1 Floating-gate semiconductor structures |
| 04/13/2005 | EP1522104A1 Tft electronic devices and their manufacture |
| 04/13/2005 | EP1522103A1 Field effect transistor, associated use, and associated production method |
| 04/13/2005 | EP1522102A1 Bipolar transistor |
| 04/13/2005 | EP1522092A2 Semiconductor element with stress-carrying semiconductor layer and corresponding production method |
| 04/13/2005 | EP1522091A2 Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
| 04/13/2005 | EP1522078A2 Erasable and programmable non-volatile cell |
| 04/13/2005 | EP0756760B1 Semiconductor device with guard ring and process for its production |
| 04/13/2005 | CN2692841Y Multiplex grid structure |
| 04/13/2005 | CN1606811A Electrically programmed MOS transistor source/drain series resistance |
| 04/13/2005 | CN1606807A SOi device with different silicon thicknesses |
| 04/13/2005 | CN1606806A Fabrication of non-volatile memory cell |
| 04/13/2005 | CN1606801A Semiconductor device comprising a thin oxide liner and method of manufacturing the same |
| 04/13/2005 | CN1606800A Composite spacer liner for improved transistor performance |
| 04/13/2005 | CN1606798A Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer |
| 04/13/2005 | CN1606391A El display device, driving method thereof, and electronic equipment provided with the display device |
| 04/13/2005 | CN1606390A El display device, driving method thereof, and electronic equipment provided with the display device |
| 04/13/2005 | CN1606180A Substrate jointing body and method for making same, electro-optical device making method and electro-optical device |
| 04/13/2005 | CN1606176A Nitride semiconductor light emitting device and method of manufacturing the same |
| 04/13/2005 | CN1606174A Semiconductor device and method for manufacturing the same |
| 04/13/2005 | CN1606173A Semiconductor device and method for making same |
| 04/13/2005 | CN1606172A Semiconductor device and method for making same |
| 04/13/2005 | CN1606171A Semiconductor device and method of fabricating the same |
| 04/13/2005 | CN1606170A Transistor based on double barrier tunnel junction resonant tunneling effect |
| 04/13/2005 | CN1606166A 半导体存储器及其驱动方法 Semiconductor memory device and method of driving |
| 04/13/2005 | CN1606162A Thin film transistor array substrate and method of manufacturing the same |
| 04/13/2005 | CN1606161A 薄膜晶体管阵列面板 The thin film transistor array panel |
| 04/13/2005 | CN1606140A Silicon carbide-oxide layered structure, production method thereof, and semiconductor device |
| 04/13/2005 | CN1606125A Manufacturing method of a thin film transistor array substrate |
| 04/13/2005 | CN1605921A Liquid crystal display and thin film transistor substrate therefor |
| 04/13/2005 | CN1605920A 画素结构及其制造方法 Pixel structure and its manufacturing method |
| 04/13/2005 | CN1605919A 薄膜晶体管阵列基板及其修补方法 The thin film transistor array substrate and repairing method |
| 04/13/2005 | CN1605916A Thin film transistor array substrate, liquid crystal display panel having the same, and method of manufacturing thin film transistor array substrate and liquid crystal display panel |
| 04/13/2005 | CN1605915A Liquid crystal display device and method for fabricating the same |
| 04/13/2005 | CN1605914A Display having multilayer silicon structure |
| 04/13/2005 | CN1605902A LCD device |
| 04/13/2005 | CN1605870A Acceleration sensor and manufacturing method for the same |
| 04/13/2005 | CN1197170C Semiconductor structure and its producing method |
| 04/13/2005 | CN1197169C Thin film transistor and its manufacture |
| 04/13/2005 | CN1197168C Vertical MOS transistor |
| 04/13/2005 | CN1197167C Information processing structure |
| 04/13/2005 | CN1197164C Device having thin film transistor |
| 04/13/2005 | CN1197160C Semiconductor device and its mfg. method |
| 04/13/2005 | CN1197157C Semiconductor device and its mfg. method |
| 04/13/2005 | CN1197155C Semiconductor protection device and mfg. method therefor |
| 04/13/2005 | CN1197147C Nonvolatile semiconductor memory device |
| 04/13/2005 | CN1197141C Semiconductor display device and making method thereof |
| 04/13/2005 | CN1197132C Removal of silicon oxynitride material using wet chemical process after gate etch processing |
| 04/13/2005 | CN1197129C Method for forming semiconductor device |
| 04/13/2005 | CN1197127C Method for manufacturing thin-film semiconductor device |
| 04/13/2005 | CN1196962C Transmission-reflection LCD and mfg. method thereof |
| 04/13/2005 | CN1196943C X-ray plane detector |
| 04/13/2005 | CN1196602C Thermal transfer element for forming multi-layer devices |
| 04/12/2005 | US6880140 Method to selectively identify reliability risk die based on characteristics of local regions on the wafer |
| 04/12/2005 | US6879520 Non-volatile semiconductor memory device and electric device with the same |
| 04/12/2005 | US6879515 Magnetic memory device having yoke layer |
| 04/12/2005 | US6879511 Memory on a SOI substrate |
| 04/12/2005 | US6879507 Conductive structure for microelectronic devices and methods of fabricating such structures |
| 04/12/2005 | US6879309 Electronic device and electronic apparatus |
| 04/12/2005 | US6879203 Whole chip ESD protection |
| 04/12/2005 | US6879050 Packaged microelectronic devices and methods for packaging microelectronic devices |
| 04/12/2005 | US6879043 Silicon, barrier layer of titanium nitride rich in titanium, high melting metal film layer |
| 04/12/2005 | US6879024 Strobe light control circuit and IGBT device |
| 04/12/2005 | US6879023 Seal ring for integrated circuits |
| 04/12/2005 | US6879014 Semitransparent optical detector including a polycrystalline layer and method of making |
| 04/12/2005 | US6879013 Amplifiers using spin injection and magnetic control of electron spins |