| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/19/2005 | US6881621 Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same |
| 04/19/2005 | US6881617 Manufacturing method for bipolar gate CMOS semiconductor device |
| 04/19/2005 | US6881616 System for forming a semiconductor device and method thereof including implanting through a L shaped spacer to form source and drain regions |
| 04/19/2005 | US6881611 Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device |
| 04/19/2005 | US6881603 Phase change material memory device |
| 04/19/2005 | US6881599 Transferring semiconductor crystal from a substrate to a resin |
| 04/19/2005 | US6881535 Method for producing liquid crystal display apparatus |
| 04/14/2005 | WO2005034357A1 Strained-silicon voltage controlled oscillator (vco) |
| 04/14/2005 | WO2005034246A1 Silicon carbide semiconductor device |
| 04/14/2005 | WO2005034245A1 Semiconductor device including band-engineered superlattice |
| 04/14/2005 | WO2005034244A2 Current controlling device |
| 04/14/2005 | WO2005034230A1 Semiconductor structure with different lattice constant materials and method for forming the same |
| 04/14/2005 | WO2005034221A1 Substrate and its production method |
| 04/14/2005 | WO2005034212A2 6t finfet cmos sram cell with an increased cell ratio |
| 04/14/2005 | WO2005034207A2 Varying carrier mobility on finfet active surfaces to achieve overall design goals |
| 04/14/2005 | WO2005034186A2 Method for forming a semiconductor device having isolation regions |
| 04/14/2005 | WO2005020275A3 Vertical semiconductor device |
| 04/14/2005 | WO2005013371A3 Semiconductor device including band-engineered superlattice |
| 04/14/2005 | WO2005010981A3 Array of nanoscopic mosfet transistors and fabrication |
| 04/14/2005 | WO2004105098A3 P-type group ii-vi semiconductor compounds |
| 04/14/2005 | WO2004100217B1 Field effect chalcogenide devices |
| 04/14/2005 | WO2004059697A3 Adaptive negative differential resistance device |
| 04/14/2005 | US20050079736 Fabrication method for polycrystalline silicon thin film and display device fabricated using the same |
| 04/14/2005 | US20050079735 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device |
| 04/14/2005 | US20050079732 Method and device to form high quality oxide layers of different thickness in one processing step |
| 04/14/2005 | US20050079726 Self-aligned mask formed utilizing differential oxidation rates of materials |
| 04/14/2005 | US20050079720 Substrate processing method and a computer readable storage medium storing a program for controlling same |
| 04/14/2005 | US20050079698 Contact structure and manufacturing method thereof |
| 04/14/2005 | US20050079696 Encapsulated MOS transistor gate structures and methods for making the same |
| 04/14/2005 | US20050079695 Process for fabricating a transistor with a metal gate, and corresponding transistor |
| 04/14/2005 | US20050079693 Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask |
| 04/14/2005 | US20050079687 Method for separating sapphire wafer into chips |
| 04/14/2005 | US20050079684 Method of manufacturing an accelerometer |
| 04/14/2005 | US20050079681 Deep-trench capacitor with hemispherical grain silicon surface and method for making the same |
| 04/14/2005 | US20050079679 Trench capacitor and method for fabricating a trench capacitor |
| 04/14/2005 | US20050079678 Heterojunction bipolar transistor using reverse emitter window |
| 04/14/2005 | US20050079677 High performance semiconductor devices fabricated with strain-induced processes and methods for making same |
| 04/14/2005 | US20050079676 Method of manufacturing a trench transistor having a heavy body region |
| 04/14/2005 | US20050079675 Semiconductor device with localized charge storage dielectric and method of making same |
| 04/14/2005 | US20050079671 Double-doped polysilicon floating gate |
| 04/14/2005 | US20050079667 Semiconductor device and production method therefor |
| 04/14/2005 | US20050079665 Spin tunnel transistor |
| 04/14/2005 | US20050079662 Nonvolatile semiconductor storage and its manufacturing method |
| 04/14/2005 | US20050079660 Method of making a semiconductor transistor |
| 04/14/2005 | US20050079659 Large-area nanoenabled macroelectronic substrates and uses therefor |
| 04/14/2005 | US20050079658 Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact |
| 04/14/2005 | US20050079657 Manufacturing method of a thin film transistor array substrate |
| 04/14/2005 | US20050079650 Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication |
| 04/14/2005 | US20050079642 Manufacturing method of nitride semiconductor device |
| 04/14/2005 | US20050079641 Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof |
| 04/14/2005 | US20050079294 When an excimer laser heats amorphous silicon layer to crystallize silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer; laterally expanding crystallization occurs in amorphous silicon layer on the substrate to form polylsilicon having a crystal size of a micrometer |
| 04/14/2005 | US20050078890 Easy-to-unseal packaging bag |
| 04/14/2005 | US20050078546 Semiconductor memory device and method of manufacturing the same |
| 04/14/2005 | US20050078534 Trench buried bit line memory devices and methods thereof |
| 04/14/2005 | US20050078523 Non-volatile semiconductor memory device |
| 04/14/2005 | US20050078462 Laser assisted material deposition |
| 04/14/2005 | US20050078433 Ceramic substrate for thin-film electronic components, method for producing the substrate, and thin-film electronic component employing the substrate |
| 04/14/2005 | US20050078263 Liquid crystal display and thin film transistor substrate therefor |
| 04/14/2005 | US20050078254 Thin film transistor array substrate, liquid crystal display panel having the same, and method of manufacturing thin film transistor array substrate and liquid crystal display panel |
| 04/14/2005 | US20050078253 Liquid crystal display and thin film transistor array panel therefor |
| 04/14/2005 | US20050078240 Electro-optical device and electronic apparatus |
| 04/14/2005 | US20050078235 Display and method for repairing defects thereof |
| 04/14/2005 | US20050078233 Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display |
| 04/14/2005 | US20050078099 Electro-optic displays, and components for use therein |
| 04/14/2005 | US20050078071 [pixel structure of active organic light emitting diode] |
| 04/14/2005 | US20050077911 Electrostatic capacitance detection device |
| 04/14/2005 | US20050077844 Flat panel display |
| 04/14/2005 | US20050077631 Semiconductor device |
| 04/14/2005 | US20050077622 Active phase cancellation for power delivery |
| 04/14/2005 | US20050077599 Package type semiconductor device |
| 04/14/2005 | US20050077591 Semiconductor device |
| 04/14/2005 | US20050077590 Guard ring structure for a Schottky diode |
| 04/14/2005 | US20050077583 Lateral power MOSFET for high switching speeds |
| 04/14/2005 | US20050077580 Non-volatile semiconductor memory with single layer gate structure |
| 04/14/2005 | US20050077578 Arrangement for reducing current density in transistor in an IC |
| 04/14/2005 | US20050077577 Novel ESD protection device |
| 04/14/2005 | US20050077576 Semiconductor device and semiconductor memory using the same |
| 04/14/2005 | US20050077575 Organic thin film transistor enhanced in charge carrier mobility by virtue of surface relief structure |
| 04/14/2005 | US20050077574 1T/0C RAM cell with a wrapped-around gate device structure |
| 04/14/2005 | US20050077573 Semiconductor devices and methods of fabricating the same |
| 04/14/2005 | US20050077572 Semiconductor device having periodic construction |
| 04/14/2005 | US20050077570 MIS semiconductor device and method of fabricating the same |
| 04/14/2005 | US20050077569 Silicon carbide-oxide layered structure, production method thereof, and semiconductor device |
| 04/14/2005 | US20050077568 Method of forming a recess channel trench pattern, and fabricating a recess channel transistor |
| 04/14/2005 | US20050077566 Recess channel flash architecture for reduced short channel effect |
| 04/14/2005 | US20050077565 Semiconductor memory device |
| 04/14/2005 | US20050077564 Fully depleted silicon-on-insulator CMOS logic |
| 04/14/2005 | US20050077560 Semiconductor device and manufacturing method thereof |
| 04/14/2005 | US20050077559 Trench capacitor and a method for manufacturing the same |
| 04/14/2005 | US20050077558 Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth |
| 04/14/2005 | US20050077555 Memory |
| 04/14/2005 | US20050077553 Methods of forming multi fin FETs using sacrificial fins and devices so formed |
| 04/14/2005 | US20050077552 Metal-oxide-semiconductor device with enhanced source electrode |
| 04/14/2005 | US20050077551 Power system inhibit method and device and structure therefor |
| 04/14/2005 | US20050077550 Semiconductor device and manufacturing method of the same |
| 04/14/2005 | US20050077548 Method for manufacturing semiconductor integrated circuit device |
| 04/14/2005 | US20050077547 Method of fabricating a metal oxide semiconductor field effect transistor and a metal oxide semiconductor field effect transistor |
| 04/14/2005 | US20050077544 Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof |
| 04/14/2005 | US20050077541 GaN/AIGaN/GaN dispersion-free high electron mobility transistors |
| 04/14/2005 | US20050077538 Design methodology for multiple channel heterostructures in polar materials |