Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2005
04/20/2005EP1524685A1 Method for processing a semiconductor device comprising an silicon-oxy-nitride dielectric layer
04/20/2005EP1524684A1 Method for providing a semiconductor substrate with a layer structure of activated dopants
04/20/2005EP1524299A1 Composition for preparing organic insulator
04/20/2005EP1523778A2 Heteroatom-containing diamondoid transistors
04/20/2005EP1523775A2 Soi field effect transistor element having a recombination region and method of forming same
04/20/2005EP1523772A2 Silicon-on-insulator wafer for integrated circuit
04/20/2005EP1523766A1 Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
04/20/2005EP1523763A2 Molecular layer deposition of thin films with mixed components
04/20/2005EP1232116A4 Silicon nanoparticle and method for producing the same
04/20/2005EP0912998A4 Method for cmos latch-up improvement by mev billi (buried implanted layer for lateral isolation) plus buried layer implantation
04/20/2005CN1608322A Organic semiconductor and method
04/20/2005CN1608310A Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
04/20/2005CN1607875A Display device and method for manufacturing same
04/20/2005CN1607874A Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
04/20/2005CN1607867A El display device, driving method thereof, and electronic equipment provided with the display device
04/20/2005CN1607685A Composition for preparing organic insulator
04/20/2005CN1607683A Nitride semiconductors on silicon substrate and method of manufacturing the same
04/20/2005CN1607679A Diode structure in series connection with deep N well portion and method for forming same
04/20/2005CN1607678A Semiconductor device with trench structure
04/20/2005CN1607677A Structure for and method of fabricating a high-mobility field-effect transistor
04/20/2005CN1607674A Quantum efficiency enhancement for cmos imaging sensor with borderless contact
04/20/2005CN1607670A Portion lacked SOI VMOS element
04/20/2005CN1607669A Nonvolatile semiconductor memory device having double floating gate structure and method of manufacturing the same
04/20/2005CN1607668A Sonos存储器及其制造和操作方法 Sonos memory and manufacturing and method of operation
04/20/2005CN1607667A Nonvolatile memory cell employing a plurality of dielectric nanoclusters and method of fabricating the same
04/20/2005CN1607665A 半导体装置及显示装置 The semiconductor device and display device
04/20/2005CN1607664A Integrated circuit device with electrostatic discharge protection element
04/20/2005CN1607659A High performance semiconductor devices fabricated with strain-induced processes and methods for making same
04/20/2005CN1607652A Semiconductor device and manufacturing method thereof
04/20/2005CN1607646A Method of making semiconductor devices in a semiconductor substrate
04/20/2005CN1607642A Semiconductor channel on insulator structure
04/20/2005CN1607639A Fabrication method of a semiconductor device
04/20/2005CN1607638A Techniques for layer transfer processing
04/20/2005CN1607448A Active base plate, display device and manufacturing method of display device
04/20/2005CN1607446A 液晶显示器 LCD Monitor
04/20/2005CN1607444A Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display
04/20/2005CN1607439A Flat inside switching type liquid crystal display device
04/20/2005CN1198392C Terminal circuit without influence by voltage
04/20/2005CN1198324C Method for forming high quality multiple thickness oxide layers by using high temperature descum
04/20/2005CN1198322C Single tunnel gate oxidation process for fabricating NAND flash memory
04/20/2005CN1198171C Pattern forming method and method for producing liquid crystal display using the method
04/19/2005US6883159 Patterning semiconductor layers using phase shifting and assist features
04/19/2005US6882592 Semiconductor memory device
04/19/2005US6882573 DMOS device with a programmable threshold voltage
04/19/2005US6882572 Method of operating a semiconductor memory array of floating gate memory cells with horizontally oriented edges
04/19/2005US6882375 Thin film transistor array substrate for liquid crystal display
04/19/2005US6882264 Electrothermal self-latching MEMS switch and method
04/19/2005US6882203 Latch circuit for holding detection state of a signal
04/19/2005US6882055 Non-rectilinear polygonal vias
04/19/2005US6882053 Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same
04/19/2005US6882051 Nanowires, nanostructures and devices fabricated therefrom
04/19/2005US6882031 Ammonia gas passivation on nitride encapsulated devices
04/19/2005US6882030 Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
04/19/2005US6882029 Junction varactor with high Q factor and wide tuning range
04/19/2005US6882026 Semiconductor apparatus and process for producing the same, and process for making via hole
04/19/2005US6882023 Floating resurf LDMOSFET and method of manufacturing same
04/19/2005US6882018 Semiconductor device that include silicide layers
04/19/2005US6882017 Field effect transistors and integrated circuitry
04/19/2005US6882016 Semiconductor device, electro-optical device, electronic apparatus, and method for manufacturing semiconductor device
04/19/2005US6882014 Protection circuit for MOS components
04/19/2005US6882013 Transistor with reduced short channel effects and method
04/19/2005US6882012 Semiconductor device and a method of manufacturing the same
04/19/2005US6882010 High performance three-dimensional TFT-based CMOS inverters, and computer systems utilizing such novel CMOS inverters
04/19/2005US6882009 Electrostatic discharge protection device and method of manufacturing the same
04/19/2005US6882008 Semiconductor integrated circuit device
04/19/2005US6882006 Semiconductor device and method of manufacturing the same
04/19/2005US6882005 High-voltage vertical transistor with a multi-layered extended drain structure
04/19/2005US6882004 Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor
04/19/2005US6882003 Method and apparatus for a flash memory device comprising a source local interconnect
04/19/2005US6882002 Non-volatile semiconductor memory device having a dielectric layer formed around and planar with a first stack's top surface
04/19/2005US6882001 Electrically-programmable non-volatile memory cell
04/19/2005US6882000 Trench MIS device with reduced gate-to-drain capacitance
04/19/2005US6881998 Semiconductor device and method for producing the same
04/19/2005US6881996 Metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer
04/19/2005US6881994 Monolithic three dimensional array of charge storage devices containing a planarized surface
04/19/2005US6881990 Semiconductor device including MOS field effect transistor having offset spacers or gate sidewall films on either side of gate electrode and method of manufacturing the same
04/19/2005US6881988 Heterojunction bipolar transistor and semiconductor integrated circuit device using the same
04/19/2005US6881987 pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same
04/19/2005US6881979 One-chip micro-integrated optoelectronic sensor
04/19/2005US6881688 Method of fabricating a vertically profiled electrode and semiconductor device comprising such an electrode
04/19/2005US6881658 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process
04/19/2005US6881653 Method of manufacturing CMOS semiconductor device
04/19/2005US6881652 Method to fabricate an intrinsic polycrystalline silicon film
04/19/2005US6881647 Synthesis of layers, coatings or films using templates
04/19/2005US6881645 Method of preventing semiconductor layers from bending and semiconductor device formed thereby
04/19/2005US6881641 Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same
04/19/2005US6881639 Method of manufacturing semiconductor device
04/19/2005US6881638 Method of fabricating a bipolar junction transistor
04/19/2005US6881636 Methods of forming deuterated silicon nitride-containing materials
04/19/2005US6881635 Strained silicon NMOS devices with embedded source/drain
04/19/2005US6881634 Buried-channel transistor with reduced leakage current
04/19/2005US6881633 Method of manufacturing a semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film
04/19/2005US6881632 Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS
04/19/2005US6881631 Method of manufacturing semiconductor device
04/19/2005US6881630 Methods for fabricating field effect transistors having elevated source/drain regions
04/19/2005US6881629 Method to make minimal spacing between floating gates in split gate flash
04/19/2005US6881628 Vertical flash memory cell with buried source rail
04/19/2005US6881627 Flash memory with ultra thin vertical body transistors
04/19/2005US6881626 Method of fabricating a non-volatile memory device with a string select gate
04/19/2005US6881624 P-channel dynamic flash memory cells with ultrathin tunnel oxides