Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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05/03/2005 | US6888210 Lateral DMOS transistor having reduced surface field |
05/03/2005 | US6888208 Square-law detector based on spin injection and nanowires |
05/03/2005 | US6888207 High voltage transistors with graded extension |
05/03/2005 | US6888206 Power semiconductor device and method of manufacturing the same |
05/03/2005 | US6888205 Metal oxide semiconductor field-effect transistor having a gate oxide layer with portions of different thicknesses and associated methods |
05/03/2005 | US6888204 Semiconductor devices, and methods for same |
05/03/2005 | US6888203 Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup |
05/03/2005 | US6888201 Bipolar ESD protection structure |
05/03/2005 | US6888200 One transistor SOI non-volatile random access memory cell |
05/03/2005 | US6888199 High-density split-gate FinFET |
05/03/2005 | US6888198 Straddled gate FDSOI device |
05/03/2005 | US6888197 Power metal oxide semiconductor field effect transistor layout |
05/03/2005 | US6888196 Vertical MOSFET reduced in cell size and method of producing the same |
05/03/2005 | US6888195 Semiconductor device with alternating conductivity type layers having different vertical impurity concentration profiles |
05/03/2005 | US6888194 Nonvolatile semiconductor memory device, manufacturing method thereof, and operating method thereof |
05/03/2005 | US6888192 Mirror image non-volatile memory cell transistor pairs with single poly layer |
05/03/2005 | US6888191 Semiconductor device and fabrication process therefor |
05/03/2005 | US6888190 EEPROM with source line voltage stabilization mechanism |
05/03/2005 | US6888187 DRAM cell with enhanced SER immunity |
05/03/2005 | US6888183 Manufacture method for semiconductor device with small variation in MOS threshold voltage |
05/03/2005 | US6888182 Thin film transistor, method for manufacturing same, and liquid crystal display device using same |
05/03/2005 | US6888181 Triple gate device having strained-silicon channel |
05/03/2005 | US6888180 Hetero-junction bipolar transistor and a method for manufacturing the same |
05/03/2005 | US6888179 GaAs substrate with Sb buffering for high in devices |
05/03/2005 | US6888177 Increased base-emitter capacitance |
05/03/2005 | US6888176 Thyrister semiconductor device |
05/03/2005 | US6888175 Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers |
05/03/2005 | US6888170 Highly doped III-nitride semiconductors |
05/03/2005 | US6888164 Display pixel having a capacitive electrode with different conductivity type from the switching element |
05/03/2005 | US6888162 Electronic apparatus having polycrystalline semiconductor thin film structure |
05/03/2005 | US6888161 Structure of TFT planar display panel |
05/03/2005 | US6888160 Semiconductor device and fabrication method thereof |
05/03/2005 | US6887800 Method for making a semiconductor device with a high-k gate dielectric and metal layers that meet at a P/N junction |
05/03/2005 | US6887799 Indium oxide conductive film |
05/03/2005 | US6887798 STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
05/03/2005 | US6887797 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer |
05/03/2005 | US6887796 Method of wet etching a silicon and nitrogen containing material |
05/03/2005 | US6887776 Methods to form metal lines using selective electrochemical deposition |
05/03/2005 | US6887774 Conductor layer nitridation |
05/03/2005 | US6887765 Method for manufacturing a bipolar junction transistor |
05/03/2005 | US6887764 Method for producing a gate structure for an MOS transistor |
05/03/2005 | US6887763 Method for using thin spacers and oxidation in gate oxides |
05/03/2005 | US6887762 Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
05/03/2005 | US6887761 Vertical semiconductor devices |
05/03/2005 | US6887760 Fabrication process of a trench gate power MOS transistor with scaled channel |
05/03/2005 | US6887758 Non-volatile memory device and method for forming |
05/03/2005 | US6887756 Method of forming flash memory with protruded floating gate |
05/03/2005 | US6887754 Semiconductor device having a reduced leakage current and a fabrication process thereof |
05/03/2005 | US6887747 Method of forming a MISFET having a schottky junctioned silicide |
05/03/2005 | US6887746 Insulated gate field effect transistor and method for forming the same |
05/03/2005 | US6887745 Polysilicon thin film transistor and method of forming the same |
05/03/2005 | US6887744 Method of forming a thin film transistor substrate with a interconnection electrode |
05/03/2005 | US6887743 Method of fabricating a gate dielectric layer for a thin film transistor |
05/03/2005 | US6887742 Method for manufacturing a thin film transistor array panel for a liquid crystal display |
05/03/2005 | US6887734 Method of manufacturing semiconductor pressure sensor |
05/03/2005 | US6887731 Liquid crystal display and method of manufacturing the same |
05/03/2005 | US6887726 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer |
05/03/2005 | US6887725 Micro electron gun of quantum size effect type and flat display using such electron guns as well as methods of their manufacture |
05/03/2005 | US6887724 Test element group, method of manufacturing a test element group, method of testing a semiconductor device, and semiconductor device |
05/03/2005 | US6887395 Method of forming sub-micron-size structures over a substrate |
05/03/2005 | US6887311 Method of forming ohmic electrode |
04/29/2005 | CA2491242A1 Method of manufacturing n-type semiconductor diamond, and n-type semiconductor diamond |
04/28/2005 | WO2005038997A2 Intersubband detector with avalanche multiplier region |
04/28/2005 | WO2005038943A2 Organic thin-film transistor |
04/28/2005 | WO2005038933A1 Recess channel flash architecture for reduced short channel effect |
04/28/2005 | WO2005038932A2 Fully depleted silicon-on-insulator cmos logic |
04/28/2005 | WO2005038931A1 Semiconductor device and method for manufacturing same |
04/28/2005 | WO2005038930A2 Structuring method, and field effect transistors |
04/28/2005 | WO2005038929A1 Method for manufacturing semiconductor device |
04/28/2005 | WO2005038928A1 Method for manufacturing transistor |
04/28/2005 | WO2005038927A1 Trench insulated gate field effect transistor |
04/28/2005 | WO2005038926A1 Semiconductor device and method of manufacturing such a semiconductor device |
04/28/2005 | WO2005038921A1 Semiconductor apparatus |
04/28/2005 | WO2005038901A1 Dynamic schottky barrier mosfet device and method of manufacture |
04/28/2005 | WO2005038900A1 Semiconductor device and method of manufacturing such a semiconductor device |
04/28/2005 | WO2005038881A2 Short-channel transistors |
04/28/2005 | WO2005038875A2 High performance strained cmos devices |
04/28/2005 | WO2005038867A2 Semiconductor device with a toroidal-like junction |
04/28/2005 | WO2005038865A2 Amorphous carbon layer to improve photoresist adhesion |
04/28/2005 | WO2005017976A3 Device threshold control of front-gate silicon-on-insulator mosfet using a self-aligned back-gate |
04/28/2005 | WO2005011010A3 Component with a structure element having magnetic properties and method |
04/28/2005 | WO2005001800A3 Alternative thin film transistors for liquid crystal displays |
04/28/2005 | WO2005000735A3 Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system |
04/28/2005 | WO2004109794A3 Coiled circuit device and method of making the same |
04/28/2005 | WO2004095517A3 Passivation layer for group iii-v semiconductor devices |
04/28/2005 | WO2004054922A3 Nanostructure, electronic device and method of manufacturing the same |
04/28/2005 | WO2004021410A3 Deterministically doped field-effect devices and methods of making same |
04/28/2005 | US20050090640 Mono-, oligo-and polythieno[2,3-b]thiophenes |
04/28/2005 | US20050090103 Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers |
04/28/2005 | US20050090102 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding |
04/28/2005 | US20050090095 Method to fabricate aligned dual damascene openings |
04/28/2005 | US20050090093 Stress free etch processing in combination with a dynamic liquid meniscus |
04/28/2005 | US20050090090 Method of fabricating ultra thin flip-chip package |
04/28/2005 | US20050090087 Nickel silicide - silicon nitride adhesion through surface passivation |
04/28/2005 | US20050090084 Method of forming a gate structure |
04/28/2005 | US20050090082 Method and system for improving performance of MOSFETs |
04/28/2005 | US20050090081 Single electron transistor manufacturing method by electro-migration of metallic nanoclusters |
04/28/2005 | US20050090078 Processing apparatus and method |
04/28/2005 | US20050090068 Method for fabricating transistor of semiconductor device |
04/28/2005 | US20050090067 Silicide formation for a semiconductor device |