Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2005
05/26/2005US20050110063 Single transistor RAM cell and method of manufacture
05/26/2005US20050110062 Semiconductor device and method for manufacturing the same
05/26/2005US20050110057 Endurance improvement by sidewall nitridation of poly floating gate for nonvolatile memory devices using substrate or drain-side erase scheme
05/26/2005US20050110056 Efficient transistor structure
05/26/2005US20050110052 Method for manufacturing a solid state imaging device and a method for manufacturing a lens
05/26/2005US20050110051 Surface processing method for a chip device and a chip device formed by he method
05/26/2005US20050110048 Layout of a thin film transistor and the forming method thereof
05/26/2005US20050110046 High-frequency diode
05/26/2005US20050110045 Semiconductor device and method of manufacturing the same
05/26/2005US20050110043 Nitride semiconductor substrate, method of fabrication thereof, and semiconductor element built thereon
05/26/2005US20050110042 Power semiconductor device
05/26/2005US20050110039 Modification of carrier mobility in a semiconductor device
05/26/2005US20050110038 High voltage semiconductor device having current localization region
05/26/2005US20050110037 Light-emitting semiconductor device and method of fabrication
05/26/2005US20050110036 LED package
05/26/2005US20050110030 Semiconductor laser
05/26/2005US20050110023 Organic light-emitting display
05/26/2005US20050110022 Thin film transistor and method for fabricating the same
05/26/2005US20050110021 Active matrix organic light emitting display (OLED) and method of fabrication
05/26/2005US20050110020 Electro-optical device, manufacturing method of the same, and electronic apparatus
05/26/2005US20050110017 TFT modulating threshold voltage and flat panel display having the same
05/26/2005US20050110016 Method of fabricating a semiconductor device
05/26/2005US20050110015 Thin film transistor and method for fabricating the same
05/26/2005US20050110014 Thin film transistor array panel and manufacturing method thereof
05/26/2005US20050110013 High aperture LCD with insulating color filters overlapping bus lines on active substrate
05/26/2005US20050110012 Overlay mark for measuring and correcting alignment errors
05/26/2005US20050110011 Thin film transistor and method of manufacturing the same
05/26/2005US20050110010 Opto-electronic element with a metallized carrier
05/26/2005US20050110008 Organic thin film transistor comprising buffer layer
05/26/2005US20050110006 Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same
05/26/2005US20050110004 Magnetic tunnel junction with improved tunneling magneto-resistance
05/26/2005US20050110003 Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions
05/26/2005US20050110002 Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus
05/26/2005US20050110001 Tunneling emitter with nanohole openings
05/26/2005US20050110000 Multiple sensor system
05/26/2005US20050109743 Semiconductor thin film forming system
05/26/2005US20050109608 Method of improving thermal stability for cobalt salicide
05/26/2005CA2535634A1 Nanotube-based switching elements with multiple controls and circuits made from same
05/25/2005EP1533855A1 Thin film transistor, method for its manufacture, and circuit or electronic device/apparatus comprising it
05/25/2005EP1533854A2 Organic thin film transistor comprising buffer layer
05/25/2005EP1533849A2 Heterojunction bipolar transistor
05/25/2005EP1533838A2 Method for manufacturing transistor and image display device using the same
05/25/2005EP1532689A1 Non-volatile semiconductor memory element and corresponding production and operation method
05/25/2005EP1532688A1 Organic semiconductor element, production method therefor and organic semiconductor device
05/25/2005EP1532687A1 Field effect transistor
05/25/2005EP1532686A2 Photodetector circuits
05/25/2005EP1532685A1 Configurable molecular switch array
05/25/2005EP1532684A1 Ferroelectric device and method of manufacturing such a device
05/25/2005EP1532678A2 Semiconductor constructions with gated isolation regions having indium-doped sub-regions
05/25/2005EP1532672A2 Nitrogen passivation of interface states in sio 2/sic structures
05/25/2005EP1532669A1 Atomic layer deposition of cmos gates
05/25/2005EP1532659A2 Fin fet devices from bulk semiconductor and method for forming
05/25/2005EP1532658A1 Conductive etch stop for etching a sacrificial layer
05/25/2005EP1532291A2 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
05/25/2005EP1532288A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
05/25/2005EP1102467B1 Solid-state imaging device, method for driving the same, and image input device
05/25/2005EP0675502B1 Multiple sector erase flash EEPROM system
05/25/2005DE19838108B4 Randstruktur für Hochvolt-Halbleiterbauelemente Edge structure for high voltage semiconductor devices
05/25/2005DE19603288B4 Halbleitervorrichtung Semiconductor device
05/25/2005DE10392622T5 Barometrischer Drucksensor Barometric pressure sensor
05/25/2005DE10348021A1 Verfahren zur Herstellung einer Halbleiterstruktur mit einer Einkapselung einer Füllung, welche zum Anfüllen von Gräben verwendet wird A method of fabricating a semiconductor structure having an encapsulation of a fill, which is used for priming of trenches
05/25/2005DE10348007A1 Verfahren zum Strukturieren und Feldeffekttransistoren A method for patterning and field effect transistors
05/25/2005DE10347621A1 Substratbasiertes Package für integrierte Schaltkreise Substrate-based package for integrated circuits
05/25/2005DE10341806A1 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Schicht und integriertes Halbleiterbauelement mit einer epitaktischen mit Arsen in-situ dotierten Silizium-Germanium Schicht A process for producing an epitaxial silicon-germanium layer and integrated semiconductor device with an epitaxial doped with arsenic in-situ silicon-germanium layer
05/25/2005DE10334797B3 Semiconductor component with field stop layer with p or n channel transistor has transistor gate arranged so potential exists between gate, bounding part of spatial charging zone area to cause a current to flow through field stop layer
05/25/2005DE102004012155B3 Integrated dynamic memory cell comprises a capacitor arranged in a first trench in a semiconductor substrate, and a vertical selective transistor arranged in a second trench in the substrate
05/25/2005CN2702447Y Novel small volume diode
05/25/2005CN2702446Y Bidirectional trigger diode
05/25/2005CN1620730A Lateral junction field-effect transistor and its manufacturing method
05/25/2005CN1620729A Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
05/25/2005CN1620728A 半导体装置 Semiconductor device
05/25/2005CN1620720A Method for forming underlying insulation film
05/25/2005CN1620718A Method of forming layers of oxide of different thicknesses on a surface of a substrate
05/25/2005CN1620715A Two-mask trench schottky diode
05/25/2005CN1620598A Sensor formed on silicon on insulator structure and having reduced power up drift
05/25/2005CN1620212A Organic devices and organic devices production method
05/25/2005CN1619923A Power generator, semiconductor and method for forming power generator
05/25/2005CN1619900A 半导体激光器 Semiconductor lasers
05/25/2005CN1619856A Thin film transistor, method for its manufacture, and circuit or electronic device/apparatus comprising it
05/25/2005CN1619855A 有机半导体晶体管元件 Organic semiconductor transistor element
05/25/2005CN1619852A Semiconductor light-emitting device
05/25/2005CN1619850A Light-emitting semiconductor device and method of fabrication
05/25/2005CN1619844A GaN based LED upside down welding combination, and lamp and chip horizontally upside down welding technique
05/25/2005CN1619838A Method of manufacturing variable capacitor
05/25/2005CN1619837A Active matrix organic light emitting device having series thin film transistor, and fabrication method therefor
05/25/2005CN1619836A Thin film transistor and method for fabricating the same
05/25/2005CN1619835A Field effect transistor (FET), integrated circuit (IC) including the FETs and a method of forming IC
05/25/2005CN1619834A Method of reducing dislocation-induced leakage in a strained-layer field-effect transistor
05/25/2005CN1619833A Insulated gate bipolar transistor and method of fabricating the same
05/25/2005CN1619832A Insulated gate bipolar transistor and method of fabricating the same
05/25/2005CN1619831A Insulated gate type semiconductor device
05/25/2005CN1619830A 半导体器件 Semiconductor devices
05/25/2005CN1619819A Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same
05/25/2005CN1619817A Semiconductor devices having different gate dielectrics and methods for manufacturing the same
05/25/2005CN1619804A Semiconductor device and its mfg method, electroluminescence apparatus and its mfg method
05/25/2005CN1619799A Semiconductor device with a pair of radiating fan
05/25/2005CN1619793A Method for fabricating semiconductor device with fine patterns
05/25/2005CN1619784A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
05/25/2005CN1619781A Processing apparatus and method
05/25/2005CN1619773A Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers
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