Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2005
06/02/2005US20050116285 Semiconductor device and manufacturing method thereof
06/02/2005US20050116284 Semiconductor devices
06/02/2005US20050116283 Semiconductor device
06/02/2005US20050116282 Closed cell trench metal-oxide-semiconductor field effect transistor
06/02/2005US20050116281 Multilayered dual bit memory device with improved write/erase characteristics and method of manufacturing
06/02/2005US20050116280 Flash process for stacking poly etching
06/02/2005US20050116279 Flash memory devices and methods of fabricating the same
06/02/2005US20050116275 Trench capacitor structure
06/02/2005US20050116272 Semiconductor device and manufacturing method thereof
06/02/2005US20050116268 Semiconductor device
06/02/2005US20050116267 MOS transistor device
06/02/2005US20050116266 Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device
06/02/2005US20050116265 Semiconductor device
06/02/2005US20050116264 Amplifying solid-state image pickup device and driving method therefor
06/02/2005US20050116262 Method for programming P-channel EEPROM
06/02/2005US20050116260 Focal plane arrays in type II-superlattices
06/02/2005US20050116259 Solid-state imaging device and method of driving the same
06/02/2005US20050116257 Field effect transister structures
06/02/2005US20050116254 Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
06/02/2005US20050116253 Semiconductor device
06/02/2005US20050116252 Semiconductor device and method of fabricating semiconductor device
06/02/2005US20050116250 Solid-state image sensing device and method of fabricating a solid-state image sensing device
06/02/2005US20050116249 Semiconductor diode and production method suitable therefor
06/02/2005US20050116248 Nitride semiconductor device and production process thereof
06/02/2005US20050116237 Method for forming a flexible metal foil substrate display
06/02/2005US20050116234 Minimizing degradation of SiC bipolar semiconductor devices
06/02/2005US20050116231 Thin film transistor and method of manufacturing the same
06/02/2005US20050116230 Metal carbide gate structure and method of fabrication
06/02/2005US20050116229 Semiconductor device and method of manufacturing the same
06/02/2005US20050116228 Methods of manufacturing thin film transistors using masks to protect the channel regions from impurities while doping a semiconductor layer to form source/drain regions
06/02/2005US20050116227 Semiconductor device and manufacturing method thereof
06/02/2005US20050116226 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
06/02/2005US20050116225 Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
06/02/2005US20050116219 RF circuits including transistors having strained material layers
06/02/2005US20050116218 Non-planar transistor having germanium channel region and method of manufacturing the same
06/02/2005US20050116217 Trench type mosgated device with strained layer on trench sidewall
06/02/2005US20050116215 Enhanced carrier confinement in active region; optical power; component containing indium gallium nitride quantum well and alternating aluminum containing and free layers
06/02/2005US20050115642 Having specific silicon to germanium ratio layer topped by silicon layer; higher heat radiation
06/02/2005DE202005001249U1 Trench metal isolator semiconductor component, especially for high frequency use, is formed in semiconductor substrate with active and inactive regions; active region contains trench with conductive gate material, source region, body region
06/02/2005DE19639035B4 Halbleitervorrichtung Semiconductor device
06/02/2005DE19630740B4 Bipolarer Transistor mit Kurzschlußanode und seitlich angeordneter isolierter Gate-Elektrode A bipolar transistor with short-circuit the anode and laterally disposed insulated gate
06/02/2005DE19620021B4 Halbleitervorrichtung des Grabentyps The semiconductor device of grave type
06/02/2005DE10353772A1 Verfahren zur Herstellung von Transistorstrukturen mit LDD A process for producing structures with transistor LDD
06/02/2005DE10350000A1 Control method for magnetic resistance in magnetic FETs uses magnetic fields to determine transmission properties for a magnetically conductive channel
06/02/2005DE10349908A1 Power semiconductor component with a MESA structure used as a diode for a rectifier comprises a semiconductor body with a first zone of a first conducting type and a second zone of a second conducting type
06/02/2005DE10349582A1 Halbleiterdiode sowie dafür geeignetes Herstellungsverfahren Semiconductor diode as well as for suitable manufacturing process
06/02/2005DE10345520A1 Charge-Trapping-Speicherzelle und Verfahren zum Betrieb einer Charge-Trapping-Speicherzelle Charge-trapping memory cell and method for operating a charge-trapping memory cell
06/02/2005DE102004052653A1 Halbleitervorrichtung mit Metallplatten und Halbleiterchip A semiconductor device having metal plates and the semiconductor chip
06/02/2005DE102004051624A1 Thin film transistor substrate for display device comprises pad electrodes, protective film covering pad electrodes, and slit in protective film
06/02/2005DE102004047007A1 Keramiksubstrat für elektronische Dünnschichtbauelemente, Verfahren für das Herstellen des Substrats und elektronisches Dünnschichtbauelement unter Verwendung des Substrats Ceramic substrates for electronic thin film device, method for manufacturing the substrate and electronic thin film device using the substrate
06/02/2005DE102004045767A1 Verfahren zur Herstellung einer Leuchtdiode unter Verwendung von Metall-Substrat und Metall-Klebe-Technologie und Struktur dieser A process for producing a light emitting diode using metal substrate and metal bonding technology and structure of this
06/02/2005DE102004041883A1 Halbleitervorrichtung Semiconductor device
06/02/2005DE102004033743A1 Eine Dünnfilmvorrichtung und ein Verfahren zum Bereitstellen einer thermischen Unterstützung in derselben A thin film device and a method for providing a thermal support in the same
06/02/2005DE102004030172A1 Manufacture of flash memory device e.g. NAND type flash memory device, involves etching conductive layers and dielectric layers in single etch apparatus using hard mask layer as mask, where a control gate and a floating gate are formed
06/02/2005DE10021907B4 Brennstoffzellensystem mit einem Brennstoffzellenstapel mit integrierter Verpolschutzdiode Fuel cell system with a fuel cell stack with integrated reverse polarity protection diode
06/02/2005CA2546106A1 Vicinal gallium nitride substrate for high quality homoepitaxy
06/01/2005EP1536498A1 Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same
06/01/2005EP1536485A1 Capacitor and flat panel display having the same
06/01/2005EP1536483A1 Nonvolatile semiconductor storage device and manufacturing method
06/01/2005EP1536482A1 Thin film transistor with tapered edges
06/01/2005EP1536481A2 GaN-based III-V group compound semiconductor device and p-type electrode for the same
06/01/2005EP1536480A1 Semiconductor power device with insulated gate, trenchgate structure and corresponding manufacturing method
06/01/2005EP1536465A1 TFT and flat panel display having via holes and anode with tapered edges
06/01/2005EP1536464A2 Method of making high-voltage semiconductor devices
06/01/2005EP1536463A1 Method for manufacturing a power device with insulated trench-gate having controlled channel length and corresponding device
06/01/2005EP1535396A2 System for digitizing transient signals
06/01/2005EP1535348A2 Method for producing an integrated pin diode and corresponding circuit
06/01/2005EP1535346A2 Quasi-vertical power semiconductor device on a composite substrate
06/01/2005EP1535345A1 Semiconductor memory with vertical memory transistors and method for production thereof
06/01/2005EP1535344A1 Vertical gate semiconductor device with a self-aligned structure
06/01/2005EP1535343A1 Insulated gate field effect transistor having passivated schottky barriers to the channel
06/01/2005EP1535342A1 Method of making a vertical gate semiconductor device
06/01/2005EP1535341A1 Enhanced structure and method for buried local interconnects
06/01/2005EP1535338A2 Method for the production of sonos memory cells, sonos memory cell, and memory cell field
06/01/2005EP1535337A2 Flash memory cell and the method of making separate sidewall oxidation
06/01/2005EP1535336A2 High-density nrom-finfet
06/01/2005EP1535335A2 Semiconductor memory with vertical memory transistors in a cell field arrangement with 1-2f sp 2 /sp cells
06/01/2005EP1535334A1 Word and bit line arrangement for a finfet semiconductor memory
06/01/2005EP1535322A1 Method for fabricating a self-aligned bipolar transistor and related structure
06/01/2005EP1535319A2 Atomic layer deposition of high k metal oxides
06/01/2005EP1535316A1 Transistor element having an anisotropic high-k gate dielectric
06/01/2005EP1535286A1 Contactless uniform-tunneling separate p-well (cusp) non-volatile memory array architecture, fabrication and operation
06/01/2005EP1535109A1 Manufacture of electronic devices comprising thin-film circuit elements
06/01/2005EP1534875A1 Systems and methods for forming metal oxides using alcohols
06/01/2005EP1534661A1 Spirobifluorene derivatives, their preparation and uses thereof
06/01/2005CN1623239A Light-emitting device having PNPN structure and light-emitting device array
06/01/2005CN1623238A Based, triple-well fully depleted SOI structure, and various methods of making and operating same
06/01/2005CN1623237A Doping methods for fully-depleted soi structures, and device comprising the resulting doped regions
06/01/2005CN1623236A A method of forming a metal pattern and a method of fabricating tft array panel by using the same
06/01/2005CN1623235A Contact portion of semiconductor device and manufacturing method thereof including thin film transistor array panel for contact portion display device and manufacturing method thereof
06/01/2005CN1623234A Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same
06/01/2005CN1623227A Method for forming an improved metal silicide portion in a silicon-containing conductive region in an integrated circuit
06/01/2005CN1623226A Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same
06/01/2005CN1623223A Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers
06/01/2005CN1623222A Method of forming different silicide portions on different silicon- containing regions in a semiconductor device
06/01/2005CN1623221A Method for fabricating a semiconductor device having different metal silicide portions
06/01/2005CN1622715A Organic light-emitting display and manufacturing method thereof
06/01/2005CN1622362A Organic thin film transistor comprising buffer layer
06/01/2005CN1622361A 平面显示器 Flat Panel Display
06/01/2005CN1622356A Electronic heat pump device, laser component, optical pickup and electronic equipment