Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2005
06/09/2005US20050121722 Semiconductor device having patterned SOI structure and method for fabricating the same
06/09/2005US20050121721 Insulated-gate field-effect thin film transistors
06/09/2005US20050121720 Power MOSFET and methods of making same
06/09/2005US20050121719 Semiconductor device with elevated source/drain structure and its manufacture method
06/09/2005US20050121718 Semiconductor device and method of fabricating the same
06/09/2005US20050121717 Semiconductor device
06/09/2005US20050121715 Nonvolatile memory with spacer trapping structure
06/09/2005US20050121714 Non-volatile two-transistor semiconductor memory cell and method for producing the same
06/09/2005US20050121712 Flash memory cell and method of manufacturing the same and programming/erasing/reading method of flash memory cell
06/09/2005US20050121710 Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same
06/09/2005US20050121709 Ferroelectric memory device and method of manufacturing the same
06/09/2005US20050121708 Elevated photo diode in an image sensor
06/09/2005US20050121706 Semiconductor nano-rod devices
06/09/2005US20050121705 Method and apparatus for fabricating semiconductor device
06/09/2005US20050121704 Semiconductor device and method of manufacturing the same
06/09/2005US20050121703 Semiconductor device and method for manufacturing the same
06/09/2005US20050121702 Modulated trigger device
06/09/2005US20050121700 Magnetic field effect transistor, latch and method
06/09/2005US20050121699 Dynamic threshold voltage MOSFET on SOI
06/09/2005US20050121696 Semiconductor device and hetero-junction bipolar transistor
06/09/2005US20050121695 Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof
06/09/2005US20050121694 Compound semiconductor high frequency switch device
06/09/2005US20050121693 Boron phosphide-based semiconductor device production method thereof light-emitting diode and boron phosphide-based semiconductor layer
06/09/2005US20050121691 Active semiconductor component with a reduced surface area
06/09/2005US20050121690 Semiconductor arrangement comprising a pn-transition and method for producing a semiconductor arrangement
06/09/2005US20050121686 Semiconductor light emitting devices and submounts and methods for forming the same
06/09/2005US20050121678 Vertical cavity surface emitting laser diode and method for manufacturing the same
06/09/2005US20050121677 Capacitor and flat panel display having the same
06/09/2005US20050121674 Organic thin-film transitor and method of manufacturing method thereof
06/09/2005US20050121673 Manufacturing method of thin film transistor substrate
06/09/2005US20050121672 Semiconductor device and a method of manufacturing the same
06/09/2005US20050121671 Method for fabricating laminated silicon gate electrode
06/09/2005US20050121668 Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain
06/09/2005US20050121667 Method of doping organic semiconductors with quinonediimine derivatives
06/09/2005US20050121663 Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit
06/09/2005US20050121662 Surface emitting device, manufacturing method thereof and projection display device using the same
06/09/2005US20050121661 Field effect transistor with enhanced insulator structure
06/09/2005US20050121519 Solid state image pickup device, method of driving solid state image pickup device, and camera using the solid state image pickup device
06/09/2005US20050121412 Pull-back method of forming fins in FinFETs
06/09/2005US20050121111 Irradiating a layer of non-single-crystalline semiconductor implanted with oxygen ions to convert to insulating oxidized films and other areas are converted to films of single-crystal grains arranged in a regulated mode; irradiation of maximum intensity and of minimum intensity arranged in a pattern
06/09/2005US20050120550 Method for forming metal wires by microdispensing pattern
06/09/2005DE19654561B4 Speicherzellenfeld Memory cell array
06/09/2005DE19501558B4 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
06/09/2005DE10392391T5 Unterstützende Steuergateverbindung auf einem Paket unter Verwendung zusätzlicher Anschlusshügel Supporting control gate connection on a packet using additional connection Hill
06/09/2005DE10361934B3 Quantum electronics nanocomponent has charge zone provided by nanocluster below window opening in insulation provided as etched ion track
06/09/2005DE10351030A1 Transistorstruktur, Speicherzelle, DRAM und Verfahren zur Herstellung einer Transistorstruktur in einem Halbleitersubstrat Transistor structure, memory cell, DRAM and methods of making a transistor structure in a semiconductor substrate,
06/09/2005DE10351014A1 Diodenstruktur und integrale Leistungsschaltanordnung mit Low-Leakage-Diode Diode structure and integral power switching device with low leakage diode
06/09/2005DE10350751A1 Verfahren zum Herstellen eines vertikalen Feldeffekttransistors und Feldeffekttransistor A method for producing a vertical field effect transistor and the field effect transistor
06/09/2005DE10350702A1 Capacitive component for power semiconductors and eeprom memory cells has two electrodes sandwiching a dielectric layer with a resistive layer between dielectric and one electrode
06/09/2005DE10350684A1 Production of a power transistor arrangement used as a metal oxide semiconductor power transistor involves forming a cell field in a semiconductor substrate, inserting cell field trenches and a connecting trench within the cell field
06/09/2005DE10350160A1 Blocking/barrier layer FET in silicon carbide to operate with a semiconductor function has doped semiconductor areas, a current path, a source structure, a drain structure and a gateway structure
06/09/2005DE10245089B4 Dotierverfahren und Halbleiterbauelement And doping the semiconductor component
06/09/2005DE102004048723A1 Herstellverfahren für ein Dünnschichttransistorarray-Substrat Manufacturing method of a thin film transistor array substrate
06/09/2005DE102004046994A1 Lichtemittierende Diode A light-emitting diode
06/09/2005DE10106426B4 Vertikaler Graben-Feldeffekttransistor mit Rekombinationsschicht sowie dazugehöriges Herstellungsverfahren Vertical trench field effect transistor with recombination and belonging to manufacturing process
06/09/2005CA2546198A1 Strained semiconductor devices
06/08/2005EP1538828A2 Amplifying solid-state image pickup device and driving method therefor
06/08/2005EP1538685A1 OFETs with active channels formed of densified layers
06/08/2005EP1538684A1 Process for doping organic semiconductors with derivatives of diiminoquinones
06/08/2005EP1538678A2 LDMOS structure and method of making the same
06/08/2005EP1538677A1 LDMOS structure and method of making the same
06/08/2005EP1538676A1 Thin film semiconductor integrated circuit and method of fabricating the same
06/08/2005EP1538675A1 Semiconductor device
06/08/2005EP1538674A2 Semiconductor device
06/08/2005EP1538673A1 Protective device
06/08/2005EP1538671A2 Semiconductor integrated circuit with protection against electrostatic discharge
06/08/2005EP1538670A2 Semiconductor module
06/08/2005EP1538243A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method
06/08/2005EP1537605A1 Nanotube permeable base transistor and method of making same
06/08/2005EP1537394A1 Soi component comprising margins for separation
06/08/2005EP1537263A2 Semiconductor nanocrystal heterostructures
06/08/2005EP0809861B1 Method of manufacturing a semiconductor device for surface mounting suitable for comparatively high voltages, and such a semiconductor device
06/08/2005CN1625811A Enhnced cut-off frequency silicon germanium transistor
06/08/2005CN1625810A Semiconductor device and production method therefor
06/08/2005CN1625809A Semiconductor device and its manufacturing method
06/08/2005CN1625808A Semiconductor device comprising low dielectric material film and its production method
06/08/2005CN1625803A Method of making transistors with gate insulation layers of differing thickness
06/08/2005CN1625801A Method to form high quality oxide layers of different thickness in one processing step
06/08/2005CN1625717A Multi-domain liquid crystal display and a thin film transistor substrate of the same
06/08/2005CN1625714A A vertically aligned mode liquid crystal display
06/08/2005CN1625590A An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same
06/08/2005CN1625462A Device for injection moulding of moulded bodies made from plastic
06/08/2005CN1624948A Method of doping organic semiconductors with quinonediimine derivatives
06/08/2005CN1624934A 半导体装置 Semiconductor device
06/08/2005CN1624933A 薄膜晶体管与其制作方法 The thin film transistor and its manufacturing method
06/08/2005CN1624932A 半导体器件 Semiconductor devices
06/08/2005CN1624931A Thin film transistor of multi-grid structure and manufacturing method thereof
06/08/2005CN1624930A Field effect transistor, integrated circuit and manufacturing method
06/08/2005CN1624928A Bipolar transistor and manufacturing methid thereof
06/08/2005CN1624926A Charge-transfer device
06/08/2005CN1624923A Semiconductor device and method of fabricating the same
06/08/2005CN1624922A Complementary transistors having different source and drain extension spacing
06/08/2005CN1624921A CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding
06/08/2005CN1624920A 半导体集成电路器件 The semiconductor integrated circuit device
06/08/2005CN1624902A Method for integration of silicide contacts and silicide gate metals
06/08/2005CN1624901A Method for manufacturing NAND flash device
06/08/2005CN1624900A Method for fabricating CMOS image sensor protecting low temperature oxide delamination
06/08/2005CN1624896A Interconnection structure and method for forming the same
06/08/2005CN1624886A Method for manufacturing transistor and image display device using the same
06/08/2005CN1624885A Method of manufacture thin silicon on insulator (SOI) with recessed channel and devices manufactured thereby