Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2005
06/16/2005US20050127400 Heterostructure resistor and method of forming the same
06/16/2005US20050127399 Non-uniform gate pitch semiconductor devices
06/16/2005US20050127398 Field-effect semiconductor device and method for making the same
06/16/2005US20050127397 Gallium nitride materials including thermally conductive regions
06/16/2005US20050127396 Transistor switch for high frequency and high power applications
06/16/2005US20050127393 Semiconductor device and manufacturing method of the same
06/16/2005US20050127392 Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
06/16/2005US20050127389 Semiconductor apparatus, LED print head, and printer
06/16/2005US20050127388 Light-emitting device and forming method thereof
06/16/2005US20050127384 Semiconductor optical devices and optical modules
06/16/2005US20050127380 Transistor and semiconductor device
06/16/2005US20050127374 Light-emitting device and forming method thereof
06/16/2005US20050127373 Diamond semiconductor device and method for manufacturing the same
06/16/2005US20050127369 Electro-optical device, driving circuit, and electronic apparatus
06/16/2005US20050127367 Thin film transistor and thin film transistor array panel
06/16/2005US20050127365 Semiconductor device
06/16/2005US20050127364 Wiring material and wiring board using the same
06/16/2005US20050127363 Function line and transistor array using the same
06/16/2005US20050127362 Sectional field effect devices and method of fabrication
06/16/2005US20050127361 Thin film semiconductor device, production process and information displays
06/16/2005US20050127358 Semiconductor device, electronic circuit array substrate provided with the same and method of manufacturing the electronic circuit array substrate
06/16/2005US20050127357 Thin-film transistor array with ring geometry
06/16/2005US20050127356 Test mask structure
06/16/2005US20050127353 Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires
06/16/2005US20050127349 Phase change tip storage cell
06/16/2005US20050127347 Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same
06/16/2005US20050126295 Pressure sensor
06/16/2005US20050126290 Acceleration sensor and method of manufacturing acceleration sensor
06/16/2005US20050126028 Aligning apparatus
06/16/2005DE10353093A1 Unsymmetrische lineare organische Oligomere Asymmetrical linear organic oligomers
06/16/2005DE10352730A1 Semiconductor component used as a MOSFET comprises an active semiconductor region and an insulating region which laterally delimits the active semiconductor region
06/16/2005DE10351932A1 MOS-Feldeffekttransistor mit kleiner Miller-Kapazität MOS field-effect transistor with small Miller capacitance
06/16/2005DE10351100A1 Einstellung des Phosphorprofils durch in-situ-Dotierung mit Kohlenstoff für vertikale Hochleistungs-PNP-Transistoren Setting the phosphorus profile by in-situ doping with carbon for high performance vertical PNP transistors
06/16/2005DE10351006A1 Technik zur Herstellung eines Transistors mit erhöhten Drain- und Source-Gebieten, wobei eine reduzierte Anzahl von Prozessschritten erforderlich ist Technique for manufacturing a transistor with a raised drain and source regions, wherein a reduced number of process steps is required
06/16/2005DE10203164B4 Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung Power semiconductor device and process for its preparation
06/16/2005DE102004054561A1 Verfahren zur Fertigung eines Halbleiterbauelements und Verfahren zur Behandlung einer Halbleiteroberfläche A method of manufacturing a semiconductor device and method for treating a semiconductor surface
06/16/2005DE102004054286A1 Siliziumkarbid-Halbleitervorrichtung mit Sperrschicht-Feldeffekttransistor, sowie Verfahren zu deren Herstellung Silicon carbide semiconductor device having insulated gate field effect transistor, and methods for their preparation
06/16/2005DE102004027067A1 Method for manufacturing gate structure for use in semiconductor device
06/16/2005DE102004027065A1 Verfahren zur Herstellung einer übereinander geschichteten Gate-Struktur sowie eines damit ausgestatteten Feldeffekttransistors A process for producing a stacked gate structure and a field effect transistor equipped therewith
06/15/2005EP1542294A1 Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain
06/15/2005EP1542289A1 Radiation resistant MOS structure
06/15/2005EP1542288A1 Method for manufacturing compound semiconductor wafer and compound semiconductor device
06/15/2005EP1542287A1 High-frequency bipolar transistor
06/15/2005EP1542277A2 Electrodes for RRAM memory cells
06/15/2005EP1542276A2 Memory cell with a layer having colossal magnetoresistance and an asymmetric area
06/15/2005EP1542270A1 Vertical junction field effect transistor and method for fabricating the same
06/15/2005EP1541686A1 CONSTRUCTION OF ANTIBODY USING MRL/lPR MOUSE
06/15/2005EP1541524A2 Nanoparticle deposition process
06/15/2005EP1540749A2 Organic thin film zener diodes
06/15/2005EP1540741A2 Nanostructure and nanocomposite based compositions and photovoltaic devices
06/15/2005EP1540740A2 Semiconductor device and method of manufacturing such a device
06/15/2005EP1540738A2 Controlling electromechanical behavior of structures within a microelectromechanical systems device
06/15/2005EP1540737A2 Mosfet device having geometry that permits frequent body contact
06/15/2005EP1540735A1 Method for the production of a buried stop zone in a semi-conductor element and semi-conductor element comprising a buried stop zone
06/15/2005EP1540734A2 Integrated circuit including field effect transistor and method of manufacture
06/15/2005EP1540726A1 Diode
06/15/2005EP1540725A1 Semi-conductor component with condensators buried in the substrate and insulated component layer thereof
06/15/2005EP1540720A2 A semiconductor device and method of fabricating a semiconductor device
06/15/2005EP1540719A1 Transistor structure including a metal silicide gate and channel implants and method of manufacturing the same
06/15/2005EP1540710A2 Nanocrystal electron device
06/15/2005EP1540050A1 Lightly doped silicon carbide wafer and use thereof in high power devices
06/15/2005EP1019733B1 Micro-mechanical semiconductor accelerometer
06/15/2005CN2704928Y Strain channel field effect transistor with platform separation
06/15/2005CN2704927Y Chip with partly unworked transistors and completely unworked transistors
06/15/2005CN1628389A Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
06/15/2005CN1628388A Semiconductor device and a process for forming the same
06/15/2005CN1628387A Enhanced structure and method for buried local interconnects
06/15/2005CN1628383A Method and structure for a heterojunction bipolar transistor
06/15/2005CN1628379A Semiconductor device and its producing method
06/15/2005CN1628377A Field effect transistor having lateral depletion structure
06/15/2005CN1628372A Method for producing a memory cell
06/15/2005CN1628358A Charge injection
06/15/2005CN1628264A Thin film transistor array panel for a liquid crystal display
06/15/2005CN1627873A Pixel array of electroluminescent cell
06/15/2005CN1627802A Amplifying solid-state image pickup device and driving method therefor
06/15/2005CN1627547A Phase change tip storage cell
06/15/2005CN1627540A Structure of catching diode
06/15/2005CN1627539A Structure of catching diode (four)
06/15/2005CN1627538A Structure of catching diode (two)
06/15/2005CN1627537A Structur of catching diode (two)
06/15/2005CN1627536A 半导体器件 Semiconductor devices
06/15/2005CN1627535A Diamond semiconductor device and method for manufacturing the same
06/15/2005CN1627534A Semiconductor device and method for manufacturing semiconductor device
06/15/2005CN1627533A Dynamic threshold voltage MOSFET on SOI
06/15/2005CN1627532A I/O NMOS parts for reducing hot carrier's effect
06/15/2005CN1627531A Sectional field effect transistor and method of fabrication
06/15/2005CN1627530A Bipolar junction transistor and methods of manufacturing the same
06/15/2005CN1627529A OTP parts (three)
06/15/2005CN1627528A OTP parts (four)
06/15/2005CN1627527A OTP parts (two)
06/15/2005CN1627526A OTP parts (five)
06/15/2005CN1627525A OTP parts
06/15/2005CN1627519A Semiconductor and inverter structure and method for forming semiconductor structure
06/15/2005CN1627518A Semiconductor assembly and its mfg.method
06/15/2005CN1627517A Thin film transistor array panel and its mfg.method
06/15/2005CN1627503A Memory device and method of manufacturing the same
06/15/2005CN1627502A Method for fabricating semiconductor devices having silicided electrodes
06/15/2005CN1627501A Semiconductor mfg.method
06/15/2005CN1627496A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
06/15/2005CN1627488A Ion implantation in use for reducing I/O NMOS inverse short-channel effect
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