Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2005
09/08/2005US20050194585 Field effect transistor and a method for manufacturing the same
09/08/2005US20050194584 LED fabrication via ion implant isolation
09/08/2005US20050194583 Air conditioner device including pin-ring electrode configurations with driver electrode
09/08/2005US20050193836 Strain detector and pressure sensor
09/08/2005US20050193827 Micromechanical component and corresponding method for its manufacture
09/08/2005DE4104588B4 Halbleiterbauelement mit einem Leitfähigkeitsmodulations-MISFET A semiconductor device with a conductivity modulation type MISFET
09/08/2005DE19709926B4 EEPROM Flash-Zelle und Verfahren zu deren Herstellung Flash EEPROM cell and methods for their preparation
09/08/2005DE102005006821A1 Lichtemissions-Dauerbauteil mit organischem Kleber Light emission duration component organic adhesives
09/08/2005DE102005006153A1 Manufacture of field effect transistor comprises forming bridge-shaped third active region from upper surface of lower substrate layer and connecting first and second active regions formed from upper substrate layer
09/08/2005DE102004063624A1 Fabrication of split gate flash memory device involves forming gate insulating layer on exposed portion of substrate, and forming second gate overlapping one side of first gate in which split gate is configured with first and second gates
09/08/2005DE102004063590A1 Formation of silicon quantum dot for semiconductor memory device, involves applying isotropic etching to substrate using barrier film as mask, and oxidizing isotropic etched substrate with thermal treatment to form gate oxide film
09/08/2005DE102004063476A1 Mono-gate memory device e.g. flash memory has oxide-nitride-oxide layer and gate oxide layer formed adjacently on active area of substrate
09/08/2005DE102004062969A1 Flash-Speichervorrichtung und Verfahren zu deren Programmieren und Löschen A flash memory device and method of programming and erasing
09/08/2005DE102004062829A1 Fabrication of semiconductor device e.g. vertical transistor comprises forming channel ion implantation areas in substrate and forming second conductive type source/drain impurity ion areas in substrate corresponding to pillar
09/08/2005DE102004060440A1 Formation of oxide film in semiconductor device, e.g. forming gate oxide film of transistor, by forming oxide film on silicon substrate by performing oxidation process, and performing high-temperature thermal treatment process
09/08/2005DE102004042798A1 IGBT-Baugruppe IGBT module
09/08/2005DE102004008245B3 Integrierter Halbleiterspeicher und Verfahren zum elektrischen Stressen eines integrierten Halbleiterspeichers Integrated semiconductor memory and method for electrically stressing a semiconductor integrated circuit memory
09/08/2005DE102004006544B3 Verfahren zur Abscheidung eines leitfähigen Kohlenstoffmaterials auf einem Halbleiter zur Ausbildung eines Schottky-Kontaktes und Halbleiterkontaktvorrichtung A process for the deposition of a conductive carbon material on a semiconductor to form a Schottky contact and the semiconductor contact device
09/08/2005DE102004005363A1 Halbleiter-Struktur Semiconductor structure
09/08/2005DE102004004846A1 Verfahren zum Abscheiden einer Schicht aus einem Material auf einem Substrat A method of depositing a layer of a material on a substrate
09/08/2005DE102004003538B3 Integrierte Halbleiterschaltung mit einer Logik- und Leistungs-Metallisierung ohne Intermetall-Dielektrikum und Verfahren zu ihrer Herstellung A semiconductor integrated circuit comprising a logic and power metallization without intermetal dielectric and method for their preparation
09/07/2005EP1571716A1 Light-emitting device
09/07/2005EP1571713A1 Spin injection device, magnetic device using the same, magnetic thin film used in the same
09/07/2005EP1571712A1 Spin-injection device and magnetic device using spin-injection device
09/07/2005EP1571711A1 Lateral short-channel dmos, method for manufacturing same and semiconductor device
09/07/2005EP1571703A2 Eeprom with etched tunneling window
09/07/2005EP1571702A2 Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots
09/07/2005EP1571674A2 Method for operating an electrically erasable and programmable memory cell and corresponding memory device
09/07/2005EP1571572A2 Value information management system and method therefor
09/07/2005EP1571454A1 Microelectromechanical system
09/07/2005EP1571434A2 Strain detector and pressure sensor
09/07/2005EP1570527A1 Insulated gate semiconductor device and method of making the same
09/07/2005EP1570526A2 High performance spin-valve transistor
09/07/2005EP1570525A1 Method for forming a dielectric stack
09/07/2005EP1570524A2 Package having exposed integrated circuit device
09/07/2005EP1446840A4 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
09/07/2005EP1153437B1 Bipolar transistor and method for producing same
09/07/2005CN2724204Y 半导体芯片 Semiconductor chip
09/07/2005CN2724041Y Pixel structure of thin film transistor liquid crystal display
09/07/2005CN2724040Y 液晶显示装置 The liquid crystal display device
09/07/2005CN1666580A Organic electroluminescence display and its manufacturing method
09/07/2005CN1666347A Tft electronic devices and their manufacture
09/07/2005CN1666346A Integrated circuit including field effect transistor and method of manufacture
09/07/2005CN1666344A Method for fabricating an nrom memory cell array
09/07/2005CN1666331A Method of transferring of a layer of strained semiconductor material
09/07/2005CN1666325A Vertical junction field-effect transistor and method of manufacturing the same
09/07/2005CN1666324A Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus
09/07/2005CN1666320A Method for the production of a short channel field effect transistor
09/07/2005CN1666318A Active matrix backplane for controlling controlled elements and method of manufacture thereof
09/07/2005CN1666295A Erasable and programmable non-volatile cell
09/07/2005CN1666172A Methods of computing with digital multistate phase change materials
09/07/2005CN1665043A Electronic device and method of fabricating the same
09/07/2005CN1665034A 半导体器件 Semiconductor devices
09/07/2005CN1665033A Biasing circuits, solid state imaging devices, and methods of manufacturing the same
09/07/2005CN1665028A Semiconductor device
09/07/2005CN1665024A Semiconductor device featuring multi-layered electrode structure
09/07/2005CN1665023A Resin-encapsulated semiconductor device and lead frame, and method for manufacturing the same
09/07/2005CN1665019A Method for operating electric writeable-eraseable memory unit and apparatus for electric memory
09/07/2005CN1665018A A small-area high-performance differential inductor with laminated construction
09/07/2005CN1665016A Semiconductor device with shallow trench isolation and its manufacture method
09/07/2005CN1665000A Method of manufacture of finfet devices with T-shaped fins and devices manufactured thereby
09/07/2005CN1664998A Structure of Schottky diode and method for manufacturing same
09/07/2005CN1664972A Negative base plate and its manufacture method
09/07/2005CN1664686A Thin film transistor arraying bread board and its manufacture method
09/07/2005CN1664685A Method of manufacturing array substrate and thin film transistor array panel
09/07/2005CN1664684A Substrate of liquid crystal display device
09/07/2005CN1664683A 电子电路 Electronic circuit
09/07/2005CN1664680A Thin film transistor array panel for display
09/07/2005CN1664664A 主动矩阵型液晶显示装置 An active matrix type liquid crystal display device
09/07/2005CN1663981A Organic semiconductor polymer for organic thin film transistor containing quinoxaline ring in the backbone chain
09/07/2005CN1218404C Semi-conductor device and its producing method
09/07/2005CN1218403C Semiconductor device and its producing method
09/07/2005CN1218402C Compound semiconductor switch circuit apparatus
09/07/2005CN1218400C EFT with neck shape channel and mfg. method thereof
09/07/2005CN1218399C Semi-conductor device
09/07/2005CN1218397C SOI semiconductor integrated circuit for eliminating floater effect and mfg. method thereof
09/07/2005CN1218395C Improved integrated oscillators and tuning circuits
09/07/2005CN1218375C Method for making semiconductor device
09/07/2005CN1218367C Manufacture of film semiconductor device
09/07/2005CN1218366C Film semiconductor device
09/07/2005CN1218361C Method for making semiconductor device
09/07/2005CN1218291C Semiconductor display device, mfg. method thereof and active array display device
09/07/2005CN1218163C Sensor
09/06/2005US6940761 Merged MOS-bipolar capacitor memory cell
09/06/2005US6940757 Structure and operating method for nonvolatile memory cell
09/06/2005US6940754 Channel erase type nonvolatile semiconductor memory device and electronic card and electronic apparatus using the device
09/06/2005US6940740 Multilevel semiconductor memory device and method for driving the same as a neuron element in a neural network computer
09/06/2005US6940705 Capacitor with enhanced performance and method of manufacture
09/06/2005US6940632 Micromechanical structure, in particular for an acceleration sensor
09/06/2005US6940480 Pixel structure
09/06/2005US6940357 Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line
09/06/2005US6940151 Silicon-rich low thermal budget silicon nitride for integrated circuits
09/06/2005US6940149 Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base
09/06/2005US6940145 Termination structure for a semiconductor device
09/06/2005US6940144 Semiconductor equipment
09/06/2005US6940143 Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
09/06/2005US6940141 Flip-chip image sensor packages and methods of fabrication
09/06/2005US6940140 Package structure of solid-state image sensor
09/06/2005US6940138 Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment
09/06/2005US6940137 Semiconductor device having an angled compensation implant and method of manufacture therefor
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