| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 08/24/2005 | EP1566843A1 Silicon carbide semiconductor device and its manufacturing method |
| 08/24/2005 | EP1566832A1 Method for producing semiconductor substrate and method for fabricating field effect transistor and semiconductor substrate and field effect transistor |
| 08/24/2005 | EP1566613A1 Sensor device |
| 08/24/2005 | EP1565946A1 Transistors having buried p-type layers beneath the source region and methods of fabricating the same |
| 08/24/2005 | EP1565945A1 Radiation-emitting semiconductor device and method of manufacturing such a device |
| 08/24/2005 | EP1565944A1 Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
| 08/24/2005 | EP1565943A1 Transistor comprising fill areas in the source and/or drain region |
| 08/24/2005 | EP1565936A2 Novel field effect transistor and method of fabrication |
| 08/24/2005 | EP1565934A1 Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers |
| 08/24/2005 | EP1565931A1 Strained finfet cmos device structures |
| 08/24/2005 | EP1565415A1 Substrate and method for the formation of continuous magnesium diboride and doped magnesium diboride wires |
| 08/24/2005 | EP0863495B1 Display device |
| 08/24/2005 | EP0820644B1 Semiconductor device provided with transparent switching element |
| 08/24/2005 | CN2720641Y High-voltage assembly |
| 08/24/2005 | CN2720640Y Strain slotted transistor structure with crystal lattice asynmmetry area |
| 08/24/2005 | CN2720634Y Copper-made sequential structure |
| 08/24/2005 | CN1659714A Nitride semiconductor and fabrication method thereof |
| 08/24/2005 | CN1659712A Structure and method for an emitter ballast resistor in an HBT |
| 08/24/2005 | CN1659711A Semiconductor device and method for fabricating the same |
| 08/24/2005 | CN1659710A Dopen region in an SOI substrate |
| 08/24/2005 | CN1659709A Method for fabricating nrom memory cells with trench transistors |
| 08/24/2005 | CN1659697A Semiconductor device and method of manufacturing same |
| 08/24/2005 | CN1659696A A silicon-on-insulator device with strain film and method for forming strain film |
| 08/24/2005 | CN1659693A Method for producing a hetero-bipolar transistor and hetero-bipolar-transistor |
| 08/24/2005 | CN1659692A Substrate processing method |
| 08/24/2005 | CN1659687A Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate |
| 08/24/2005 | CN1658725A Organic light-emitting display device and method for manufacturing the same |
| 08/24/2005 | CN1658718A Method of fabricating organic light emitting display |
| 08/24/2005 | CN1658496A Power amplification apparatus, and mobile communication terminal apparatus |
| 08/24/2005 | CN1658402A Lateral conduction schottky diode with plural mesas |
| 08/24/2005 | CN1658401A Gate structure, semiconductor device with gate structure and method of forming the same |
| 08/24/2005 | CN1658400A Semiconductor device and method for fabricating the same |
| 08/24/2005 | CN1658399A Efficient transistor structure |
| 08/24/2005 | CN1658398A Bidirectional device, method of fabricating the same, and semiconductor device incorporating the same |
| 08/24/2005 | CN1658395A Image sensor with vertically integrated thin-film photodiode and manufacturing method |
| 08/24/2005 | CN1658393A Non-volatile memory devices including high-voltage transistors and methods of fabricating the same |
| 08/24/2005 | CN1658392A Integrated circuit capable of avoiding bolt-lock effect |
| 08/24/2005 | CN1658391A Vertical bipolar transistor and method of manufacturing the same |
| 08/24/2005 | CN1658388A Electrostatic discharge protection circuit |
| 08/24/2005 | CN1658376A Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method |
| 08/24/2005 | CN1658374A Method for manufacturing mesa semiconductor device |
| 08/24/2005 | CN1658371A Low doped layer for nitride-based semiconductor device |
| 08/24/2005 | CN1658329A Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory device |
| 08/24/2005 | CN1658071A Overlay mark for measuring and correcting alignment errors |
| 08/24/2005 | CN1658052A Semiconductor device and manufacturing method thereof, liquid crystal television system, and EL television system |
| 08/24/2005 | CN1658050A Substrate of liquid crystal plane and method for forming polyimide |
| 08/24/2005 | CN1658030A Electro-optical device and electronic apparatus |
| 08/24/2005 | CN1657401A 差动压力传感器 Differential Pressure Sensor |
| 08/24/2005 | CN1216427C Transistor with notches gate |
| 08/24/2005 | CN1216426C Compound semiconductor switch circuit device |
| 08/24/2005 | CN1216417C Nonvolatile memory |
| 08/24/2005 | CN1216405C Semiconductor substrate, field effect transistor, and method for forming silicon germanide layer and manufacturing method thereof |
| 08/24/2005 | CN1216316C Electrooptic appts. and electronic appliance |
| 08/23/2005 | US6934194 Nonvolatile memory having a trap layer |
| 08/23/2005 | US6934193 Method of erasing a flash memory cell |
| 08/23/2005 | US6934191 Nonvolatile semiconductor memory device |
| 08/23/2005 | US6934186 Semiconductor device |
| 08/23/2005 | US6934136 ESD protection of noise decoupling capacitors |
| 08/23/2005 | US6933989 Manufacturing method for a liquid crystal display device |
| 08/23/2005 | US6933988 Active matrix substrate and method for producing the same |
| 08/23/2005 | US6933796 Voltage controlled oscillating circuit |
| 08/23/2005 | US6933715 Sensor system for sensing movement |
| 08/23/2005 | US6933620 Semiconductor component and method of manufacture |
| 08/23/2005 | US6933606 Semiconductor device whose semiconductor chip has chamfered backside surface edges and method of manufacturing the same |
| 08/23/2005 | US6933589 Method of making a semiconductor transistor |
| 08/23/2005 | US6933588 High performance SCR-like BJT ESD protection structure |
| 08/23/2005 | US6933582 Semiconductor sensor having a diffused resistor |
| 08/23/2005 | US6933581 Semiconductor chip, terahertz electromagnetic-wave device, and method of manufacturing these |
| 08/23/2005 | US6933580 Semiconductor structure with substantially etched oxynitride defects protruding therefrom |
| 08/23/2005 | US6933579 Semiconductor solid phase epitaxy damage control method and integrated circuit produced thereby |
| 08/23/2005 | US6933578 Semiconductor storage device |
| 08/23/2005 | US6933577 High performance FET with laterally thin extension |
| 08/23/2005 | US6933576 Semiconductor device including a predetermined film formed at a border between dielectric films |
| 08/23/2005 | US6933575 Semiconductor device and its manufacturing method |
| 08/23/2005 | US6933571 Thin film transistors, liquid crystal display device and electronic apparatus using the same |
| 08/23/2005 | US6933569 Soi mosfet |
| 08/23/2005 | US6933568 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same |
| 08/23/2005 | US6933565 Semiconductor device and method of manufacturing the same |
| 08/23/2005 | US6933564 Semiconductor integrated circuit device and method of manufacturing the same |
| 08/23/2005 | US6933563 High performance, integrated, MOS-type semiconductor device and related manufacturing process |
| 08/23/2005 | US6933562 Power transistor structure with non-uniform metal widths |
| 08/23/2005 | US6933561 Semiconductor device and method of manufacturing the same |
| 08/23/2005 | US6933560 Power devices and methods for manufacturing the same |
| 08/23/2005 | US6933559 LDMOS with guard ring (of same type as drain) surrounding the drain |
| 08/23/2005 | US6933557 Fowler-Nordheim block alterable EEPROM memory cell |
| 08/23/2005 | US6933556 Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer |
| 08/23/2005 | US6933554 Recessed tunnel oxide profile for improved reliability in NAND devices |
| 08/23/2005 | US6933548 Negative differential resistance load element |
| 08/23/2005 | US6933546 Semiconductor component |
| 08/23/2005 | US6933545 Hetero-bipolar transistor having the base interconnection provided on the normal mesa surface of the collector mesa |
| 08/23/2005 | US6933544 Power semiconductor device |
| 08/23/2005 | US6933543 Compound semiconductor high frequency switch device |
| 08/23/2005 | US6933542 Field-effect transistor, and integrated circuit device and switching circuit using the same |
| 08/23/2005 | US6933541 Emitter turn-off thyristors (ETO) |
| 08/23/2005 | US6933539 Tunnel junctions for long-wavelength VCSELs |
| 08/23/2005 | US6933534 Display having differing element sizes to improve efficiency, luminance, chromaticity, and lifetime |
| 08/23/2005 | US6933530 Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction |
| 08/23/2005 | US6933529 Active matrix type organic light emitting diode device and thin film transistor thereof |
| 08/23/2005 | US6933527 Semiconductor device and semiconductor device production system |
| 08/23/2005 | US6933526 CMOS thin film transistor |