Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2005
08/25/2005US20050185499 Nonvolatile semiconductor memory apparatus and method of producing the same
08/25/2005US20050185489 Dynamic data restore in thyristor-based memory device
08/25/2005US20050185471 Method of erasing NAND flash memory device
08/25/2005US20050185470 Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory device
08/25/2005US20050185467 Method of erasing a flash memory cell
08/25/2005US20050185466 Multi-state memory cell with asymmetric charge trapping
08/25/2005US20050185462 Non-volatile memory and semiconductor device
08/25/2005US20050185456 Thin film device and a method of providing thermal assistance therein
08/25/2005US20050185451 Semiconductor memory and method of manufacturing the same
08/25/2005US20050185440 Semiconductor integrated circuit and method of manufacturing the same
08/25/2005US20050185435 Magnetic storage device and method of fabricating the same
08/25/2005US20050185129 Liquid crystal display device and method of fabricating the same
08/25/2005US20050184936 Electronic device and electronic apparatus
08/25/2005US20050184675 Field emission RF amplifier
08/25/2005US20050184406 Semiconductor device
08/25/2005US20050184400 Method and structure for interfacing electronic devices
08/25/2005US20050184395 Electronic device, method of manufacture of the same, and sputtering target
08/25/2005US20050184394 Methods of forming a metal wiring in semiconductor devices using etch stop layers and devices so formed
08/25/2005US20050184392 Method for fabricating interconnect and interconnect fabricated thereby
08/25/2005US20050184389 Thin film transistor substrate and manufacturing method thereof
08/25/2005US20050184374 Optical semiconductor device and electronic equipment using same
08/25/2005US20050184361 Vertical bipolar transistor and method of manufacturing the same
08/25/2005US20050184360 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
08/25/2005US20050184359 Structure and method of self-aligned bipolar transistor having tapered collector
08/25/2005US20050184357 Semiconductor element, manufacturing method thereof, and high frequency integrated circuit using the semiconductor element
08/25/2005US20050184356 Trench isolation structure and method of forming the same
08/25/2005US20050184355 Semiconductor device
08/25/2005US20050184350 High voltage operating field effect transistor, and bias circuit therefor and high voltage circuit thereof
08/25/2005US20050184349 High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof
08/25/2005US20050184348 Semiconductor device gate structure and method of forming the same
08/25/2005US20050184347 Semiconductor device and method of evaluating the same
08/25/2005US20050184346 Semiconductor device and method for manufacturing the same
08/25/2005US20050184345 Strained-channel semiconductor structure and method of fabricating the same
08/25/2005US20050184343 MESFETs integrated with MOSFETs on common substrate and methods of forming the same
08/25/2005US20050184342 Semiconductor device and method of manufacturing the same
08/25/2005US20050184341 Biased, triple-well fully depleted SOI structure
08/25/2005US20050184340 Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents
08/25/2005US20050184339 Semiconductor devices having thermal spacers
08/25/2005US20050184338 High voltage LDMOS transistor having an isolated structure
08/25/2005US20050184336 Semiconductor device and method of manufacturing the semiconductor device
08/25/2005US20050184335 Semiconductor device and fabricating method thereof
08/25/2005US20050184334 Non-volatile memory device having a charge storage oxide layer and operation thereof
08/25/2005US20050184333 Nonvolatile semiconductor memory with stable characteristic
08/25/2005US20050184332 Nonvolatile semiconductor memory device, method for driving the same, and method for fabricating the same
08/25/2005US20050184331 Space process to prevent the reverse tunneling in split gate flash
08/25/2005US20050184330 Nonvolatile memories and methods of fabrication
08/25/2005US20050184327 Stacked gate semiconductor memory and manufacturing method for the same
08/25/2005US20050184320 Photoconductor having an embedded contact electrode
08/25/2005US20050184319 Triple-gate MOSFET transistor and methods for fabricating the same
08/25/2005US20050184318 Power mosfet and method for forming same using a self-aligned body implant
08/25/2005US20050184317 Semiconductor device
08/25/2005US20050184316 Fin field effect transistors having multi-layer fin patterns and methods of forming the same
08/25/2005US20050184315 Semiconductor device including memory cell and anti-fuse element
08/25/2005US20050184312 Double HBT base metal micro-bridge
08/25/2005US20050184311 Semiconductor transistor having a stressed channel
08/25/2005US20050184310 Structures and methods for fabricating integrated HBT/FET's at competitive cost
08/25/2005US20050184309 Process for fabricating ultra-low contact resistances in GaN-based devices
08/25/2005US20050184305 Semiconductor light emitting device and method for fabricating the same
08/25/2005US20050184303 Strain compensating structure to reduce oxide-induced defects in semiconductor devices
08/25/2005US20050184302 Nitride semiconductor device and method of manufacturing the same
08/25/2005US20050184301 Multiple ranging apparatus
08/25/2005US20050184300 Light-emitting semiconductor device and method of fabrication
08/25/2005US20050184299 Nitride semiconductor device and method for manufacturing a nitride semiconductor substrate, and method for manufacturing a nitride semiconductor device
08/25/2005US20050184296 System and method for fabricating diodes
08/25/2005US20050184294 End functionalization of carbon nanotubes
08/25/2005US20050184293 Method of manufacturing semiconductor device, method of manufacturing electronic apparatus, semiconductor device, and electronic apparatus
08/25/2005US20050184291 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
08/25/2005US20050184290 Semiconductor device
08/25/2005US20050184286 Semiconductor device including mosfet having band-engineered superlattice
08/25/2005US20050184285 Spin readout and initialization in semiconductor quantum dots
08/25/2005US20050184284 Method and structure to isolate a qubit from the environment
08/25/2005US20050184283 Semiconductor device having a triple gate transistor and method for manufacturing the same
08/25/2005US20050183686 Hydraulic lash adjuster
08/25/2005DE19962053B4 Halbleitereinrichtung mit SOI-Aufbau und Teiltrennbereichen Semiconductor device having SOI structure and partial separation areas
08/25/2005DE10393096T5 Magnetspeicher unter Verwendung eines ferromagnetischen Tunnelübergangselements A magnetic memory using a ferromagnetic tunnel junction element
08/25/2005DE10393013T5 Halbleitervorrichtung Semiconductor device
08/25/2005DE10330838B4 Elektronisches Bauelement mit Schutzring Electronic component with protection ring
08/25/2005DE10308556B4 Feldeffekttransistorvorrichtung Field effect transistor device
08/25/2005DE10207740B4 Verfahren zur Herstellung eines p-Kanal-Feldeffekttransistors auf einem Halbleitersubstrat A process for preparing a p-channel field-effect transistor on a semiconductor substrate
08/25/2005DE102005006734A1 Fabrication of split-gate transistor involves forming control gate structure conforming to side surface and including projecting portion that extends over portion of floating gate structure
08/25/2005DE102005006156A1 Sensor für eine physikalische Größe, welcher einen Sensorchip und einen Schaltungschip aufweist Sensor for a physical quantity that has a sensor chip and a circuit chip
08/25/2005DE102005004793A1 Drucksensor und Verfahren zum Herstellen eines Drucksensors Pressure sensor and method for manufacturing a pressure sensor
08/25/2005DE102004063149A1 Fabrication of semiconductor device involves forming protective layer comprising hafnium oxide, on planarized copper layer which is formed by depositing copper in trench pattern on insulating layer
08/25/2005DE102004061349A1 Verfahren zum Herstellen eines MOS-Feldeffekttransistors A method of manufacturing a MOS field effect transistor
08/25/2005DE102004059453A1 Halbleitervorrichtung Semiconductor device
08/25/2005DE102004055640A1 LDMOS-Transistorvorrichtung, Integrierter Schaltkreis und Herstellungsverfahren hiervon LDMOS transistor device, integrated circuit and manufacturing method thereof
08/25/2005DE102004053095A1 Manufacture of capacitors for dynamic random access memory, comprises patterning layer of support material to form support structures around first electrodes
08/25/2005DE102004006520A1 DRAM storage cell, formed by producing trench capacitors in a semiconductor substrate, and applying a mask to enable gate sections to be formed
08/25/2005DE102004006484A1 Integrated circuit with electrostatic discharge (ESD) resistant capacitor located in N-trough, with certain polarity of capacitor permitting formation depletion zone in trough and high ESD strength of capacitor
08/25/2005DE102004006201A1 Drucksensor mit Siliziumchip auf einer Stahlmembran Pressure sensor with silicon chip on a steel membrane
08/25/2005DE102004006199A1 Production of a micromechanical pressure sensor comprises aligning the caverns formed in a first component with openings of a second component, joining the components and applying a material layer to part of the opening
08/25/2005DE102004005775A1 Semiconductor device has a compensating structure and has field electrodes formed of a semi isolating material
08/25/2005DE102004005774A1 Method for manufacturing gate electrodes in field-plate trench transistors, involves etching back applied mask layer to give residual mask layer only within indentations
08/25/2005DE102004005384A1 Bidirectional MOS controlled semiconductor, comprises a base layer, two opposing surfaces, adjoining semiconductor layers, and a gate electrode
08/25/2005DE102004004283A1 Halbleiterstruktur Semiconductor structure
08/25/2005DE102004003414A1 Hochdrucksensorelement mit Verdrehschutz High pressure sensor element with twist
08/25/2005DE102004003374A1 Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren The semiconductor power switches and for suitable manufacturing process
08/25/2005CA2554302A1 Perylene n-type semiconductors and related devices
08/24/2005EP1566886A2 Power amplification apparatus, and mobile communication terminal apparatus
08/24/2005EP1566844A2 Multi-gate transistor and method for manufacturing the same
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