Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2005
08/18/2005US20050181529 Method for manufacturing a semiconductor component, as well as a semiconductor component, in particular a membrane sensor
08/18/2005US20050181528 Solid state imaging device and method of fabricating the same
08/18/2005US20050181523 Ferroelectric capacitor, method of manufacturing the same, and ferroelectric memory
08/18/2005US20050180237 Non-volatile semiconductor memory and method of operating the same
08/18/2005US20050180232 Semiconductor device
08/18/2005US20050180219 Random number generating element
08/18/2005US20050180217 Nonvolatile memory cell with multiple floating gates formed after the select gate
08/18/2005US20050180211 Novel multi-state memory
08/18/2005US20050180210 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
08/18/2005US20050180207 Non-volatile memory element and process for manufacturing the same
08/18/2005US20050180193 Memory device using multiple layer nano tube cell
08/18/2005US20050180086 Removable, portable controlable power link for controlling and powering components of structures at an agribusiness
08/18/2005US20050180076 Electrostatic discharge protection circuit
08/18/2005US20050179964 Thin film phototransistor, active matrix substrate using the phototransistor, and image scanning device using the substrate
08/18/2005US20050179840 Color filter panel, display apparatus having the same, and method of manufacturing the same
08/18/2005US20050179829 Flat panel display with black matrix and method of fabricating thereof
08/18/2005US20050179472 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof
08/18/2005US20050179440 Method of inspecting a semiconductor dynamic quantity sensor
08/18/2005US20050179365 Active matrix display device
08/18/2005US20050179138 Method for creating barriers for copper diffusion
08/18/2005US20050179113 Semiconductor device having MOS varactor and methods for fabricating the same
08/18/2005US20050179109 Isolation structure configurations for modifying stresses in semiconductor devices
08/18/2005US20050179108 LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistance
08/18/2005US20050179107 Low doped layer for nitride-based semiconductor device
08/18/2005US20050179106 Schottky barrier diode
08/18/2005US20050179105 Diode and method for manufacturing the same
08/18/2005US20050179104 Lateral conduction schottky diode with plural mesas
08/18/2005US20050179101 Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
08/18/2005US20050179100 Micromechanical capacitive transducer and method for producing the same
08/18/2005US20050179099 Integrated getter area for wafer level encapsulated microelectromechanical systems
08/18/2005US20050179098 Method to form a metal silicide gate device
08/18/2005US20050179097 Atomic layer deposition of CMOS gates with variable work functions
08/18/2005US20050179096 Complimentary nitride transistors vertical and common drain
08/18/2005US20050179095 Non-volatile memory cell
08/18/2005US20050179094 SRAM cell and method of manufacturing the same
08/18/2005US20050179093 Buried guard ring and radiation hardened isolation structures and fabrication methods
08/18/2005US20050179092 Method of fabricating high voltage device using double epitaxial growth
08/18/2005US20050179091 Semiconductor device and its manufacturing method
08/18/2005US20050179087 LDMOS transistor with improved ESD protection
08/18/2005US20050179085 Semiconductor device and manufacturing method of the same
08/18/2005US20050179083 Semiconductor device
08/18/2005US20050179082 Semiconductor device and method for fabricating the same
08/18/2005US20050179081 Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
08/18/2005US20050179080 Method and system for forming source regions in memory devices
08/18/2005US20050179079 Nor-type channel-program channel-erase contactless flash memory on SOI
08/18/2005US20050179078 Non-volatile memory devices including high-voltage transistors and methods of fabricating the same
08/18/2005US20050179077 Monolithic integrated soi circuit with capacitor
08/18/2005US20050179075 Transistors having a channel region between channel-portion holes and methods of forming the same
08/18/2005US20050179069 Semiconductor device and method of manufacturing same
08/18/2005US20050179068 Integrated semiconductor circuit having a logic and power metallization without intermetal dielectric
08/18/2005US20050179067 Semiconductor device and fabricating method thereof
08/18/2005US20050179066 Fabricating strained channel epitaxial source/drain transistors
08/18/2005US20050179065 ISFET using PbTiO3 as sensing film
08/18/2005US20050179063 Image sensor with vertically integrated thin-film photodiode
08/18/2005US20050179061 Semiconductor integrated circuits with stacked node contact structures and methods of fabricating such devices
08/18/2005US20050179054 Semiconductor device and process for production thereof
08/18/2005US20050179052 Heterojunction structure of nitride semiconductor and nano-device or an array thereof comprising same
08/18/2005US20050179050 Highly doped III-nitride semiconductors
08/18/2005US20050179047 Highly doped III-nitride semiconductors
08/18/2005US20050179046 P-type electrodes in gallium nitride-based light-emitting devices
08/18/2005US20050179045 Nitride semiconductor light emitting diode having improved ohmic contact structure and fabrication method thereof
08/18/2005US20050179040 Display device and method of manufacturing the same
08/18/2005US20050179039 Active matrix type semiconductor device
08/18/2005US20050179038 Thin film transistor having LDD structure
08/18/2005US20050179037 Electro-optical device and electronic apparatus
08/18/2005US20050179036 Semiconductor device and manufacturing method thereof, liquid crystal television system, and EL television system
08/18/2005US20050179033 Memory cell, method for the production thereof and use of a composition therefor
08/18/2005US20050179030 Field effect transistor device with channel fin structure and method of fabricating the same
08/18/2005US20050179028 Construction of thin strain-relaxed SiGe layers and method for fabricating the same
08/18/2005US20050179027 Nitride based semiconductor light-emitting device
08/18/2005US20050179024 Electron emission material and electron emission element using the same
08/18/2005US20050179023 Method and apparatus for removing thin metal films
08/18/2005US20050178208 Pressure sensor having a silicon chip on a steel diaphragm
08/18/2005US20050178203 Physical quantity sensor having sensor chip and circuit chip
08/18/2005DE10356119B3 Elektronisches Bauelement mit elektrische Kontaktflächen aufweisenden nachgiebigen Erhebungen und Verfahren zu dessen Herstellung Electronic component having electrical contact areas having resilient projections and process for its preparation
08/18/2005DE10297788T5 Vorrichtung für die Herstellung einer Halbleitervorrichtung und Verfahren für die Herstellung einer Halbleitervorrichtung unter Verwendung dieser Vorrichtung An apparatus for the production of a semiconductor device and method for manufacturing a semiconductor device using this apparatus,
08/18/2005DE10247038B4 Halbleitervorrichtung zur Verhinderung eines Überstroms A semiconductor device for preventing an overcurrent
08/18/2005DE102005003477A1 Verfahren zur Herstellung einer Halbleitervorrichtung mit Elektroden an Haupt- und Rückseiten eines Halbleiterchips A process for producing a semiconductor device with electrodes at the main and back sides of a semiconductor chip
08/18/2005DE102005002774A1 Lichtemissionsmodul und Leuchte The light emitting module and lamp
08/18/2005DE102004060633A1 Halbleiterlegierung mit einer geringen Oberflächenrauheit, und entsprechendes Herstellungsverfahren Semiconductor alloy with a low surface roughness, and manufacturing method thereof
08/18/2005DE102004059657A1 Diamanthalbleitervorrichtung und Verfahren zu dessen Herstellung Diamond semiconductor device and process for its preparation
08/18/2005DE102004059620A1 Halbleitervorrichtung Semiconductor device
08/18/2005DE102004052858A1 Optischer Sensor Optical sensor
08/18/2005DE102004005951A1 Verfahren zur Herstellung von vertikal isolierten Bauelementen auf SOI-Material unterschiedlicher Dicke Process for preparing vertical insulated components on SOI material of different thickness
08/18/2005DE102004005084A1 Semiconductor component with two contacting regions, between which is located semiconductor volume, within which can be generated current flow from first to second contacting region, with locally increased current flow cross-section
08/18/2005DE102004005082A1 Kondensator mit einem Dielektrikum aus einer selbstorganisierten Monoschicht einer organischen Verbindung Capacitor having a dielectric made of a self-assembled monolayer an organic compound
08/18/2005DE102004004864A1 Gate structure with layered gate electrode stack comprising doped polysilicon layer and gate metal layer sandwiching barrier layer of metal nitride with metal contact film deposited on polysilicon layer
08/18/2005DE102004004862A1 Integrated semiconductor diode arrangement for a semiconductor component with a special anode region which serves as an emitter region of a parasitic bipolar transistor
08/18/2005DE102004004585A1 Integrierter Widerstand und Herstellungsverfahren The integrated resistor and manufacturing method
08/18/2005DE102004004555A1 Verfahren zur Herstellung von hoch dotierten Halbleiterscheiben und versetzungsfreie, hoch dotierte Halbleiterscheiben Process for the preparation of highly doped semiconductor wafers and dislocation-free, highly doped semiconductor wafers
08/18/2005DE102004004221A1 Apparatus for transporting heat in laterally built semiconductors controlled by electric effects having heat conductors over or under the semiconductor material
08/18/2005DE102004004045A1 Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung A semiconductor device with a temporary field stop area and process for its preparation
08/18/2005DE102004003863A1 Technik zur Herstellung eingebetteter Metallleitungen mit einer erhöhten Widerstandsfähigkeit gegen durch Belastung hervorgerufenen Materialtransport Technology for the production of embedded metal lines with increased resistance caused by load material handling
08/18/2005DE102004003853A1 Konzept zur Kompensation von Piezo-Einflüssen auf eine integrierte Schaltunganordnung Concept for compensation of piezo influences on an integrated circuit arrangement
08/18/2005DE102004003363A1 Process to manufacture a nano-storage component for storage of an electronic charge by ion injection and crystallisation
08/18/2005DE10194791B4 Verfahren zum Bilden von Halbleiterstrukturen A method for forming semiconductor structures
08/18/2005CA2553669A1 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
08/17/2005EP1564815A1 Lateral conduction schottky diode with plural mesas
08/17/2005EP1564814A2 Organic light emitting display
08/17/2005EP1564802A2 Thin film semiconductor device and method for fabricating the same
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