Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2005
11/03/2005US20050242368 Semiconductor device and method of forming a semiconductor device
11/03/2005US20050242366 Gallium nitride based diodes with low forward voltage and low reverse current operation
11/03/2005US20050242365 Vertical structure semiconductor devices
11/03/2005US20050242364 Optical devices featuring textured semiconductor layers
11/03/2005US20050242363 Low-capacity vertical diode
11/03/2005US20050242360 White light apparatus with adjustable color temperature and method of producing white light thereof
11/03/2005US20050242359 Light emitting device
11/03/2005US20050242354 Display device and method of manufacturing the same
11/03/2005US20050242353 Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor
11/03/2005US20050242352 Fabrication method of polycrystalline silicon liquid crystal display device
11/03/2005US20050242351 Thin film transistor array panel for liquid crystal display
11/03/2005US20050242350 Organic electro luminescence device and fabrication method thereof
11/03/2005US20050242349 Multi-channel type thin film transistor and method of fabricating the same
11/03/2005US20050242348 Thin film transistor and organic electroluminescence display using the same
11/03/2005US20050242347 [thin film transistor array and fabricating method thereof]
11/03/2005US20050242345 OFETs with active channels formed of densified layers
11/03/2005US20050242343 Organic electronic circuit with functional interlayer, and method for making the same
11/03/2005US20050242342 Organic thin film transistor including organic acceptor film
11/03/2005US20050242340 Strained silicon NMOS devices with embedded source/drain
11/03/2005US20050242337 Switching device for reconfigurable interconnect and method for making the same
11/03/2005US20050242330 Dielectric material
11/03/2005US20050242327 Phosphors containing oxides of alkaline-earth and group-13 metals, and light sources incorporating the same
11/03/2005US20050242326 Phosphors containing borate of terbium, alkaline-earth, and Group-3 metals, and light sources incorporating the same
11/03/2005US20050241952 Method for manufacturing semiconductor device
11/03/2005US20050241400 Combined absolute-pressure and relative-pressure sensor
11/03/2005DE4426121B4 Verfahren zur Herstellung einer Halbleiterspeichervorrichtung A method of manufacturing a semiconductor memory device
11/03/2005DE4309898B4 Verfahren zur Herstellung eines Bipolartransistors mit einer Polysiliziumschicht zwischen einem Halbleiterbereich und einem Oberflächenelektrodenmetall A process for producing a bipolar transistor having a polysilicon layer between a semiconductor region and a surface of electrode metal
11/03/2005DE19845294B4 Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung A semiconductor device and manufacturing method of a semiconductor device
11/03/2005DE19735425B4 Mosfet Mosfet
11/03/2005DE10393631T5 Floatgate-Transistoren The floating gate transistors
11/03/2005DE10239310B4 Verfahren zur Herstellung einer elektrisch leitenden Verbindung zwischen einer ersten und einer zweiten vergrabenen Halbleiterschicht A process for producing an electrically conductive connection between a first and a second buried semiconductor layer
11/03/2005DE10217610B4 Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren Metal-semiconductor junction, semiconductor device, integrated circuit and method
11/03/2005DE102005017288A1 Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Graben in einem Siliziumcarbid-Halbleitersubstrat A method of manufacturing a semiconductor device having a trench in a silicon carbide semiconductor substrate
11/03/2005DE102005006766A1 Niedrig dotierte Schicht für ein nitrid-basiertes Halbleiterbauelement Lightly doped layer for a nitride-based semiconductor device
11/03/2005DE102004047358B3 In zwei Halbleiterkörpern integrierte Schaltungsanordnung mit einem Leistungsbauelement und einer Ansteuerschaltung Integrated in two semiconductor bodies circuit arrangement having a power component and a drive circuit
11/03/2005DE102004031515A1 Halbleiterbauelement Semiconductor device
11/03/2005DE102004018408A1 Kapazitiver Drucksensor und Verfahren zur Herstellung A capacitive pressure sensor and A process for preparing
11/03/2005DE102004018250A1 Wafer-Stabilisierungsvorrichtung und Verfahren zu dessen Herstellung Wafer-stabilizing device and method of producing the
11/03/2005DE102004017944A1 Micromechanical component for use in e.g. thermal acceleration sensor, has cavern formed in substrate, and membrane removed from component through cavern, where cavern is closed at rear side of substrate through foil
11/03/2005DE102004017788A1 Oszillator mit abstimmbarer Diffusionskapazität als Schwingkreiskapazität Oscillator with tunable diffusion capacity as a resonant circuit capacity
11/03/2005DE10014384B4 Mittels Feldeffekt steuerbare Halbleiteranordnung mit lateral verlaufender Kanalzone Using field-effect-controllable semiconductor device having laterally extending channel zone
11/03/2005CA2563418A1 Optical devices featuring textured semiconductor layers
11/03/2005CA2552956A1 An innovative screening method for coronary heart disease and stroke
11/02/2005EP1592069A2 High voltage field-effect transistor and method of manufacture thereof
11/02/2005EP1592055A2 Method of making a power semiconductor device
11/02/2005EP1592052A1 Method for manufacturing display
11/02/2005EP1592048A1 Semiconductor substrate, field-effect transistor, and their production methods
11/02/2005EP1592024A2 Operation scheme with charge balancing erase for charge trapping non-volatile memory
11/02/2005EP1590839A1 Electronic device and method of manufacturing thereof
11/02/2005EP1590837A2 High density and high programming efficiency mram design
11/02/2005EP1590836A2 Mram cells having magnetic write lines with a stable magnetic state at the end regions
11/02/2005EP1590832A2 Storage cell, storage cell arrangement, and method for the production of a storage cell
11/02/2005EP1307923B1 High-voltage diode and method for the production thereof
11/02/2005EP0997737B1 Semiconductor acceleration sensor and self-diagnosis thereof
11/02/2005CN1692635A Image pickup device having a plurality of solid-state image pickup elements
11/02/2005CN1692500A A method for making a semiconductor device having a high-k gate dielectric
11/02/2005CN1692499A Gallium nitride-based devices and manufacturing process
11/02/2005CN1692494A Nanocrystal electron device
11/02/2005CN1692489A Semiconductor construction having an isolation region of sub-regions doped with indium
11/02/2005CN1692488A Pasted soi substrate, process for producing the same and semiconductor device
11/02/2005CN1692474A Transistor element having an anisotropic high-k gate dielectric
11/02/2005CN1692473A Method for the production of a memory cell and structure thereof
11/02/2005CN1692471A 半导体电路器件模拟方法和半导体电路器件模拟器 Semiconductor circuit device simulation method and semiconductor circuit device simulator
11/02/2005CN1692450A Non-volatile memory and write method of the same
11/02/2005CN1692449A DMOS device with a programmable threshold voltage
11/02/2005CN1692070A Method of forming sub-micron-size structures over a substrate
11/02/2005CN1691860A Top-emission organic electroluminescent display and method of fabricating the same
11/02/2005CN1691855A Organic el device and electronic apparatus
11/02/2005CN1691500A Elastic wave device and package substrate
11/02/2005CN1691362A Nanowire light emitting device and method of fabricating the same
11/02/2005CN1691361A Semiconductor light emitting device and fabrication method thereof
11/02/2005CN1691357A Active matrix substrate and display device
11/02/2005CN1691356A Thin film transistor and organic electroluminescence display using the same
11/02/2005CN1691355A Semiconductor device
11/02/2005CN1691354A Semiconductor device and image display device
11/02/2005CN1691353A Thin-film transistor and method for making same
11/02/2005CN1691352A MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device
11/02/2005CN1691351A Dielectric isolation type semiconductor device
11/02/2005CN1691350A Structures and methods for manufacturing of dislocation free stressed channels in bulk silicon and SOI CMOS devices
11/02/2005CN1691349A Reverse conducting semiconductor device and a fabrication method thereof
11/02/2005CN1691348A Flat panel display device
11/02/2005CN1691346A Image sensor and method for fabricating the same
11/02/2005CN1691344A Optical device and method for fabricating the same
11/02/2005CN1691343A Structure of image sensor module and wafer level package and its forming method
11/02/2005CN1691342A 半导体器件 Semiconductor devices
11/02/2005CN1691341A Thin film circuit substrate, piezoelectric speaker device, display device, and sound-generating display device
11/02/2005CN1691340A Electronic device and method of manufacturing the same
11/02/2005CN1691337A Semiconductor device and method for manufacturing same
11/02/2005CN1691336A Buried bit line non-volatile floating gate memory cell, and array thereof, and method of formation
11/02/2005CN1691335A Nand type flash memory device, and method for manufacturing the same
11/02/2005CN1691334A Memory device using multi-layer with a graded resistance change
11/02/2005CN1691333A Memory device including a dielectric multilayer structure and method of fabricating the same
11/02/2005CN1691330A Field effect transistors having trench-based gate electrodes and methods of forming same
11/02/2005CN1691327A Semiconductor device
11/02/2005CN1691325A Semiconductor circuit and method of fabrication
11/02/2005CN1691322A Fuse regions of a semiconductor memory device and methods of fabricating the same
11/02/2005CN1691321A Semiconductor integrated circuit, method of forming the same, and method of adjusting circuit parameter thereof
11/02/2005CN1691312A Method for forming dielectric layer between gates in flash memory device
11/02/2005CN1691307A Method of fabricating semiconductor device
11/02/2005CN1691305A Semiconductor device
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