| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 03/30/2006 | US20060067128 Flash memory |
| 03/30/2006 | US20060067003 Three terminal magnetic sensor (TTM) having a metal layer formed in-plane and in contact with the base region for reduced base resistance |
| 03/30/2006 | US20060066431 Adjustable differential inductor |
| 03/30/2006 | US20060065954 High-performance CMOS SOI devices on hybrid crystal-oriented substrates |
| 03/30/2006 | US20060065952 InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors |
| 03/30/2006 | US20060065951 Structure and method for bipolar transistor having non-uniform collector-base junction |
| 03/30/2006 | US20060065950 Semiconductor device |
| 03/30/2006 | US20060065949 Semiconductor device |
| 03/30/2006 | US20060065948 Inductor energy loss reduction techniques |
| 03/30/2006 | US20060065947 Reverse-biased p/n wells isolating a cmos inductor from the substrate |
| 03/30/2006 | US20060065946 Multi-doped semiconductor e-fuse |
| 03/30/2006 | US20060065945 Chemical sensor using chemically induced electron-hole production at a Schottky barrier |
| 03/30/2006 | US20060065942 Mechanism to prevent actuation charging in microelectromechanical actuators |
| 03/30/2006 | US20060065939 Metal gate electrode semiconductor device |
| 03/30/2006 | US20060065938 Method and system for forming a feature in a high-k layer |
| 03/30/2006 | US20060065937 Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions |
| 03/30/2006 | US20060065936 Multiple doping level bipolar junctions transistors and method for forming |
| 03/30/2006 | US20060065935 Patterned backside stress engineering for transistor performance optimization |
| 03/30/2006 | US20060065934 Semiconductor device and method for manufacturing the same |
| 03/30/2006 | US20060065928 Semiconductor device |
| 03/30/2006 | US20060065927 Double gate device having a heterojunction source/drain and strained channel |
| 03/30/2006 | US20060065926 Insulated gate semiconductor device and manufacturing method of the same |
| 03/30/2006 | US20060065925 Vertical MOSFET |
| 03/30/2006 | US20060065924 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
| 03/30/2006 | US20060065923 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure |
| 03/30/2006 | US20060065922 Semiconductor memory with vertical charge-trapping memory cells and fabrication |
| 03/30/2006 | US20060065921 Non-volatile semiconductor memory device |
| 03/30/2006 | US20060065920 Semiconductor memory device and method for producing the same |
| 03/30/2006 | US20060065919 Nonvolatile memory device and method for producing the same |
| 03/30/2006 | US20060065917 Hybrid memory device and method for manufacturing the same |
| 03/30/2006 | US20060065916 Varactors and methods of manufacture and use |
| 03/30/2006 | US20060065914 Structure and method for making strained channel field effect transistor using sacrificial spacer |
| 03/30/2006 | US20060065913 Semiconductor device with double barrier film |
| 03/30/2006 | US20060065912 Non-planar III-nitride power device having a lateral conduction path |
| 03/30/2006 | US20060065908 III-nitride multi-channel heterojunction interdigitated rectifier |
| 03/30/2006 | US20060065907 White light emitting device and manufacturing method thereof |
| 03/30/2006 | US20060065898 Semiconductor device and method of manufacturing the same |
| 03/30/2006 | US20060065897 Pattern formed structure, method of forming pattern, device, electrooptical device and electronic equipment |
| 03/30/2006 | US20060065896 CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device |
| 03/30/2006 | US20060065895 Image display device |
| 03/30/2006 | US20060065894 Thin film transistor array panel and manufacturing method thereof |
| 03/30/2006 | US20060065893 Method of forming gate by using layer-growing process and gate structure manufactured thereby |
| 03/30/2006 | US20060065892 Thin film transistor array panel and manufacturing method therefor |
| 03/30/2006 | US20060065891 Zener zap diode structure compatible with tungsten plug technology |
| 03/30/2006 | US20060065890 Rhodium and iridium complexes |
| 03/30/2006 | US20060065888 Organic semiconductor diode |
| 03/30/2006 | US20060065887 Carbon nanotube-based electronic devices made by electrolytic deposition and applications thereof |
| 03/30/2006 | US20060065886 Semiconductor apparatus for white light generation and amplification |
| 03/30/2006 | US20060065185 Crystallization apparatus, crystallization method, and phase shifter |
| 03/30/2006 | DE19619921B4 Verfahren zum Herstellen einer Halbleitervorrichtung mit Funktionselement und Schutzkappe A method of manufacturing a semiconductor device having a functional element and cap |
| 03/30/2006 | DE19539340B4 Elektronische Eingangs- oder Ausgangspuffer-Schaltung mit MOS-Transistor mit mehreren schleifenförmigen Zellen Electronic input or output buffer circuit with MOS transistor with multiple loop-shaped cells |
| 03/30/2006 | DE112004000495T5 Superjunction-Bauelement und diesbezügliche Herstellungsmethode Superjunction device and related method of manufacture |
| 03/30/2006 | DE102005043329A1 Spintransistor und Herstellverfahren für einen solchen Spin transistor and manufacturing method for such a |
| 03/30/2006 | DE102005043328A1 Magnetowiderstandstransistor und Steuerungsverfahren für einen solchen Magneto-resistance transistor and control method thereof |
| 03/30/2006 | DE102005031139A1 Halbleitervorrichtung Semiconductor device |
| 03/30/2006 | DE102005024684A1 Halbleitervorrichtung Semiconductor device |
| 03/30/2006 | DE102004047313B3 Halbleiteranordnung mit einem Tunnelkontakt und Verfahren zu deren Herstellung A semiconductor device with a tunnel junction, and processes for their preparation |
| 03/30/2006 | DE102004045467A1 Feldeffekt-Trenchtransistor Field effect trench transistor |
| 03/30/2006 | DE102004044619A1 Kondensatorstruktur in Grabenstrukturen von Halbleiterbauteilen und Halbleiterbauteile mit derartigen Kondensatorstrukturen und Verfahren zur Herstellung derselben Capacitor structure in grave structures of semiconductor components and semiconductor devices having such a capacitor structures and methods of manufacturing the same |
| 03/30/2006 | DE10066053B4 Halbleiterbauelement mit erhöhter Durchbruchspannung A semiconductor device with an increased breakdown voltage |
| 03/29/2006 | EP1641046A2 MOSFET and method for fabricating the same |
| 03/29/2006 | EP1641045A2 Grounded gate and isolation techniques for reducing dark current in CMOS image sensors |
| 03/29/2006 | EP1641030A2 Method of manufacturing semiconductor device |
| 03/29/2006 | EP1640806A2 Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same |
| 03/29/2006 | EP1639652A2 Nonplanar device with stress incorporation layer and method of fabrication |
| 03/29/2006 | EP1639651A1 Lateral field-effect transistor having an insulated trench gate electrode |
| 03/29/2006 | EP1639650A2 Trench mos structure |
| 03/29/2006 | EP1639649A1 Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
| 03/29/2006 | EP1639648A2 Integrated circuit having pairs of parallel complementary finfets |
| 03/29/2006 | EP1639636A1 Pmos transistor strain optimization with raised junction regions |
| 03/29/2006 | EP1433743B1 Method for preparing cobalt-protein complex |
| 03/29/2006 | EP1346417B1 Trench schottky barrier rectifier and method of making the same |
| 03/29/2006 | EP1287564B1 Variable capacitance capacitor |
| 03/29/2006 | EP1269479B1 Bi-directional capable bucket brigade circuit |
| 03/29/2006 | EP1208521B1 Unitary package identification and dimensioning system employing ladar-based scanning methods |
| 03/29/2006 | EP1040522A4 Dual-band quantum-well infrared sensing array |
| 03/29/2006 | CN2768205Y Plane helix inductance with metal wire width and metal distance gradual change |
| 03/29/2006 | CN1754271A Methods of forming thin film transistors and related systems |
| 03/29/2006 | CN1754264A Gallium arsenide hbt having increased performance and method for its fabrication |
| 03/29/2006 | CN1754263A Semiconductor diode, electronic component, voltage source inverter and control method |
| 03/29/2006 | CN1754120A Liquid crystal display |
| 03/29/2006 | CN1753935A Functional organic thin film, organic thin-film transistor, pi-electron conjugated molecule-containing silicon compound, and methods of forming them |
| 03/29/2006 | CN1753202A Organic thin film transistor and flat panel display including the same |
| 03/29/2006 | CN1753189A Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same |
| 03/29/2006 | CN1753188A Semiconductor structure and forming method thereof |
| 03/29/2006 | CN1753187A Transistor based on bibarrier tunnel junction resonance tunneling effect |
| 03/29/2006 | CN1753155A Manufacturing method of plain polycrystalline silicon film transistor |
| 03/29/2006 | CN1752827A Liquid crystal display device |
| 03/29/2006 | CN1752825A Liquid crystal display device using small molecule organic semiconductor material and method of fabricating the same |
| 03/29/2006 | CN1752811A Liquid crystal display device having high brightness |
| 03/29/2006 | CN1248319C Top-gate type thin film transistor |
| 03/29/2006 | CN1248318C Electronic device with non-luminous display |
| 03/29/2006 | CN1248317C Semiconductor device and manufacture thereof |
| 03/29/2006 | CN1248306C DRAM fabricated on a silicon-on-insulator (SOI) substrate having bi-level digit lines |
| 03/29/2006 | CN1248299C Method of manufacturing film transistor |
| 03/29/2006 | CN1248298C Method for making semiconductor rectifier device and obtained device |
| 03/29/2006 | CN1248296C Silicon bipolar transistor, circuit arrangement and method for production of silicon bipolar transistor |
| 03/29/2006 | CN1248288C Methods of fabricating gallium nitride semiconductor layers and related structure method |
| 03/29/2006 | CN1248287C Method for producing semiconductor equipment |
| 03/29/2006 | CN1248032C Display |