Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/06/2006 | US20060071213 Low temperature selective epitaxial growth of silicon germanium layers |
04/06/2006 | US20060071212 Thin film transistor array substrate, method for manufacturing the same, liquid crystal display having the substrate, and method for manufacturing the liquid crystal display |
04/06/2006 | US20060071211 Bottom gate thin film transistor, flat panel display having the same and method of fabricating the same |
04/06/2006 | US20060071207 Selective deposition of ZnO nanostructures on a silicon substrate using a nickel catalyst and either patterned polysilicon or silicon surface modification |
04/06/2006 | US20060071206 Palladium and platinum complexes |
04/06/2006 | US20060071205 Nanocrystal switch |
04/06/2006 | US20060071204 Resistive memory element |
04/06/2006 | US20060070494 Reoxidization of reduced fine particles is suppressed; reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas |
04/06/2006 | DE4230648B4 Ladungsverschiebeelement und Verfahren zu dessen Herstellung Charge transfer element and process for its preparation |
04/06/2006 | DE4026121B4 Leitfähigkeitsmodulations-MOSFET A conductivity modulation type MOSFET |
04/06/2006 | DE19505947B4 Halbleitervorrichtung mit verbesserter Barrierenmetallschicht in einer Elektrode oder Verdrahtungsschicht A semiconductor device with improved barrier metal layer in an electrode or wiring layer |
04/06/2006 | DE112004000699T5 Verfahren zur Herstellung einer Metallgatestruktur durch Abgleichen einer Austrittsarbeitsfunktion durch Siliziumeinbau A method of manufacturing a metal gate structure by adjusting a work function by silicon installation |
04/06/2006 | DE102005046480A1 Vertical MOS transistor manufacturing method for switching converter, involves structuring auxiliary layer to form trench having side walls and extending to substrate, and fabricating insulated gate electrode on walls and substrate |
04/06/2006 | DE102005039360A1 Halbleiterbauteil Semiconductor device |
04/06/2006 | DE102004049246A1 Lateraler DMOS-Transistor und Verfahren zu seiner Herstellung A lateral DMOS transistor and method for its preparation |
04/06/2006 | DE102004048238A1 Planar field-effect transistor e.g. P-type metal oxide semiconductor field-effect transistor, for e.g. chip planar, has gate region bending/brokenly proceeding in active region in a manner that drain and source regions are of variable sizes |
04/06/2006 | DE102004046697A1 Hochspannungsfestes Halbleiterbauelement mit vertikal leitenden Halbleiterkörperbereichen und einer Grabenstruktur sowie Verfahren zur Herstellung desselben Of the same high-voltage resistant semiconductor device having vertical type semiconductor areas of the body and a grave structure and methods for preparing |
04/06/2006 | DE102004045966A1 Vertikal-Feldeffekttransistor in Source-Down-Struktur Vertical field effect transistor in source-down structure |
04/06/2006 | DE102004045854A1 Semiconductor sensor, has hollow housing made up of plastic, and semiconductor sensor chip arranged on chip carrier in housing, where thermal characteristics of chip carrier correspond to semiconductor material of sensor chip |
04/06/2006 | DE102004045768A1 Semiconductor device`s e.g. diode, edge structure producing method, involves producing phosphorus zone in edge region of semiconductor body, and etching body in edge region to produce structure, where zone produces phosphorous concentration |
04/06/2006 | DE102004044982A1 Drucksensorvorrichtung und Verfahren zum Herstellen derselben Pressure sensing device and methods for manufacturing the same |
04/06/2006 | DE102004044558A1 Gunn-Diode Gunn diode |
04/05/2006 | EP1643561A2 GaN-based semiconductor integrated circuit |
04/05/2006 | EP1643560A1 Semiconductor device and method for manufacturing same |
04/05/2006 | EP1643559A2 MOS-gated semiconductor device with top drain |
04/05/2006 | EP1643558A1 Vertical power semiconductor device and method of making the same |
04/05/2006 | EP1643555A2 Ferroelectric capacitor and its manufacturing method, and ferroelectric memory device |
04/05/2006 | EP1643549A1 Method for producing vertical bipolar transistors and integrated circuit with vertical bipolar transistors |
04/05/2006 | EP1643000A1 Seed layer processes for MOCVD of ferroelectric thin films on high-K gate oxides |
04/05/2006 | EP1642342A1 Split-channel high electron mobility transistor device |
04/05/2006 | EP1642339A1 Semiconductor device |
04/05/2006 | EP1642331A1 Integrated circuit arrangement with low-resistance contacts and method for production thereof |
04/05/2006 | EP1642325A2 Method and system for high volume transfer of dies to substrates |
04/05/2006 | EP0935816B1 Method of manufacturing a semiconductor device with a schottky junction |
04/05/2006 | EP0896734B1 All-metal, giant magnetoresistive, solid-state component |
04/05/2006 | CN2769951Y 液晶显示装置 The liquid crystal display device |
04/05/2006 | CN2769936Y Glasses base plate and liquid crystal display device |
04/05/2006 | CN1757121A Field-effect transistor with spin-dependent transmission characteristic and nonvolatile memory using same |
04/05/2006 | CN1757120A Field-effect transistor |
04/05/2006 | CN1757119A Group III nitride based flip-chip integrated circuit and method for fabricating |
04/05/2006 | CN1757118A Integrated circuit structure with improved LDMOS design |
04/05/2006 | CN1757117A Trench power MOSFET with planarized gate bus |
04/05/2006 | CN1757102A Non volatile memory cell |
04/05/2006 | CN1757101A Substrate processing method |
04/05/2006 | CN1757098A Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure |
04/05/2006 | CN1756716A Carbon nanotube device, process for producing the same and carbon nanotube transcriptional body |
04/05/2006 | CN1756075A Oscillator and semiconductor device |
04/05/2006 | CN1755946A Stress sensor chip based on SOI |
04/05/2006 | CN1755945A 半导体器件 Semiconductor devices |
04/05/2006 | CN1755944A Semiconductor device including an LDMOS transistor |
04/05/2006 | CN1755943A Display device provided with semiconductor element and manufacturing method thereof |
04/05/2006 | CN1755942A N-type carbon nanotube field effect transistor and preparation method thereof |
04/05/2006 | CN1755941A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same |
04/05/2006 | CN1755940A Improved transistor with multiple gate oxides and manufacturing method thereof |
04/05/2006 | CN1755939A Electronic apparatus, thin-film transistor structure and flat plate display device equipped with same |
04/05/2006 | CN1755938A Nanometric structure and corresponding manufacturing method |
04/05/2006 | CN1755937A Hosting structure of nanometric elements and corresponding manufacturing method |
04/05/2006 | CN1755933A Charge-trapping semiconductor memory device |
04/05/2006 | CN1755904A Method of manufacturing semiconductor device |
04/05/2006 | CN1755848A Dielectric thin film, thin film capacitor element, and method for manufacturing thin film capacitor element |
04/05/2006 | CN1755833A Floating gate analog voltage level shift circuit and method for producing a voltage reference that operates on a low supply voltage |
04/05/2006 | CN1755762A Timing generating circuit for display and display having the same |
04/05/2006 | CN1755469A Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus |
04/05/2006 | CN1755468A Thin-film semiconductor device, electro-optical device, and electronic apparatus |
04/05/2006 | CN1755467A Pre-charging scanning method for thin film transistor LCD panel |
04/05/2006 | CN1755466A Method for making electronic apparatus |
04/05/2006 | CN1755465A Liquid crystal display device |
04/05/2006 | CN1249818C Semiconductor device and manufacturing method for the same |
04/05/2006 | CN1249817C Thin-film transistor and its mfg. method, semiconductor thin-film transistor array substrate |
04/05/2006 | CN1249816C Semiconductor device and its mfg. method |
04/05/2006 | CN1249813C Single supply HFET device and method for temp. compensation |
04/05/2006 | CN1249807C Method for making mask read-only memory |
04/05/2006 | CN1249796C Method for short-channel transistor of semiconductor element |
04/05/2006 | CN1249795C Method for mfg. semiconductor device |
04/05/2006 | CN1249794C Forming method for silicide film of semiconductor element |
04/05/2006 | CN1249783C Semiconductor device and its mfg. method |
04/05/2006 | CN1249779C Method for mfg. crystal semiconductor material and method for mfg. semiconductor |
04/05/2006 | CN1249650C Displaying device having nice properties |
04/05/2006 | CN1249507C Liquid-crystal display and production thereof |
04/05/2006 | CN1249506C 电子电路 Electronic circuit |
04/05/2006 | CN1249496C Reflective liquid crystal display device |
04/05/2006 | CN1249415C Surface pressure distributed sensor |
04/05/2006 | CN1249404C Capacitive dynamic quantity sensor |
04/04/2006 | US7023732 Data erasing method, and memory apparatus having data erasing circuit using such method |
04/04/2006 | US7023731 Semiconductor memory device and portable electronic apparatus |
04/04/2006 | US7023730 Nonvolatile semiconductor memory device and writing method thereto |
04/04/2006 | US7023508 Reflection-transmission type liquid crystal display device and method for manufacturing the same |
04/04/2006 | US7023503 Image sensor with photosensitive thin film transistors |
04/04/2006 | US7023502 Semiconductor device having light-shielded thin film transistor |
04/04/2006 | US7023501 Liquid crystal display device having particular connections among drain and pixel electrodes and contact hole |
04/04/2006 | US7023482 Processing apparatus |
04/04/2006 | US7023131 Active matrix organic light emitting display and method of forming the same |
04/04/2006 | US7023094 Semiconductor integrated circuit device having diagonal direction wiring and layout method therefor |
04/04/2006 | US7023079 Stacked semiconductor chip package |
04/04/2006 | US7023077 Carrier with metal bumps for semiconductor die packages |
04/04/2006 | US7023072 Bipolar transistor |
04/04/2006 | US7023071 Semiconductor integrated circuit device and process for manufacturing the same |
04/04/2006 | US7023070 Semiconductor device |
04/04/2006 | US7023069 Method for forming thick dielectric regions using etched trenches |
04/04/2006 | US7023068 Method of etching a lateral trench under a drain junction of a MOS transistor |