Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2006
03/28/2006US7020372 Optical devices with engineered nonlinear nanocomposite materials
03/28/2006US7020025 Nonvolatile semiconductor memory
03/28/2006US7020013 Magnetic field sensor using spin polarized current
03/28/2006US7019582 Silicon-on-insulator device structure
03/28/2006US7019449 Chemical monolayer field emitter device
03/28/2006US7019417 Power-on reset circuit with current detection
03/28/2006US7019409 Circuit device
03/28/2006US7019408 Stackable ball grid array
03/28/2006US7019406 Thermally enhanced semiconductor package
03/28/2006US7019405 Terminal, semiconductor device, terminal forming method and flip chip semiconductor device manufacturing method
03/28/2006US7019404 Multilayered circuit substrate, semiconductor device and method of producing same
03/28/2006US7019400 Semiconductor device having multilayer interconnection structure and method for manufacturing the device
03/28/2006US7019399 Copper diffusion barriers made of diamond-like nanocomposits doped with metals
03/28/2006US7019397 Semiconductor device, manufacturing method of semiconductor device, stack type semiconductor device, and manufacturing method of stack type semiconductor device
03/28/2006US7019392 Storage apparatus, card type storage apparatus, and electronic apparatus
03/28/2006US7019391 NANO IC packaging
03/28/2006US7019390 Silicon nitride insulating substrate for power semiconductor module
03/28/2006US7019385 Semiconductor device and method of fabricating same
03/28/2006US7019384 Integrated, tunable capacitance device
03/28/2006US7019383 Gallium arsenide HBT having increased performance and method for its fabrication
03/28/2006US7019382 Arrangement for ESD protection of an integrated circuit
03/28/2006US7019381 Method of providing multiple logical bits per memory cell
03/28/2006US7019380 Semiconductor device
03/28/2006US7019379 Semiconductor device comprising voltage regulator element
03/28/2006US7019372 Particle detector assembly
03/28/2006US7019371 Current-in-plane magnetic sensor including a trilayer structure
03/28/2006US7019370 Method for manufacturing magnetic random access memory
03/28/2006US7019369 Static random access memory and semiconductor device using MOS transistors having channel region electrically connected with gate
03/28/2006US7019367 Integrated circuit
03/28/2006US7019364 Semiconductor substrate having pillars within a closed empty space
03/28/2006US7019363 MOS transistor with asymmetrical source/drain extensions
03/28/2006US7019362 Power MOSFET with reduced dgate resistance
03/28/2006US7019361 Semiconductor device and method of fabricating the same
03/28/2006US7019360 High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
03/28/2006US7019358 High voltage semiconductor device having an increased breakdown voltage relative to its on-resistance
03/28/2006US7019357 Transistor
03/28/2006US7019356 Memory device with reduced cell area
03/28/2006US7019355 Nonvolatile semiconductor memory and a fabrication method thereof
03/28/2006US7019354 Electrically erasable programmable read only memory (EEPROM) cells and methods of fabricating the same
03/28/2006US7019353 Three dimensional flash cell
03/28/2006US7019351 Transistor devices, and methods of forming transistor devices and circuit devices
03/28/2006US7019350 Trench device structure with single-side buried strap and method for fabricating the same
03/28/2006US7019349 Semiconductor memory device with cap structure and method of manufacturing the same
03/28/2006US7019347 Dynamic random access memory circuitry comprising insulative collars
03/28/2006US7019346 Capacitor having an anodic metal oxide substrate
03/28/2006US7019344 Lateral drift vertical metal-insulator semiconductor field effect transistor
03/28/2006US7019343 SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
03/28/2006US7019342 Double-gated transistor circuit
03/28/2006US7019341 Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer
03/28/2006US7019340 Bipolar transistor device and method for fabricating the same
03/28/2006US7019339 Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby
03/28/2006US7019338 Subscriber interface protection circuit
03/28/2006US7019337 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
03/28/2006US7019336 Semiconductor device and method for manufacturing the same
03/28/2006US7019334 LED lamp for light source of a headlamp
03/28/2006US7019333 Photon source
03/28/2006US7019329 Semiconductor device and manufacturing method thereof
03/28/2006US7019328 Printed transistors
03/28/2006US7019327 Organic semiconductor polymer and organic thin film transistor using the same
03/28/2006US7019326 Transistor with strain-inducing structure in channel
03/28/2006US7019325 Broadband light emitting device
03/28/2006US7019324 Strongly textured atomic ridge and dot MOSFETs, sensors and filters
03/28/2006US7019323 Semiconductor light emitting device
03/28/2006US7019312 Adjustment in a MAPPER system
03/28/2006US7019231 Inertial sensor
03/28/2006US7018928 Plasma treatment method to reduce silicon erosion over HDI silicon regions
03/28/2006US7018925 Post high voltage gate oxide pattern high-vacuum outgas surface treatment
03/28/2006US7018920 Composite sacrificial material
03/28/2006US7018916 Structure and method for forming a dielectric chamber and electronic device including the dielectric chamber
03/28/2006US7018915 Group III nitride compound semiconductor device and method for forming an electrode
03/28/2006US7018914 Method of enlarging contact area of a gate electrode, semiconductor device having a surface-enlarged gate electrode, and method of manufacturing the same
03/28/2006US7018900 Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions
03/28/2006US7018898 Non-volatile two transistor semiconductor memory cell and method for producing the same
03/28/2006US7018897 Self aligned method of forming a semiconductor memory array of floating gate memory cells with control gate spacers
03/28/2006US7018896 UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing
03/28/2006US7018895 Nonvolatile memory cell with multiple floating gates formed after the select gate
03/28/2006US7018894 EEPROM device having selecting transistors and method of fabricating the same
03/28/2006US7018885 Method of manufacturing semiconductor devices
03/28/2006US7018882 Method to form local “silicon-on-nothing” or “silicon-on-insulator” wafers with tensile-strained silicon
03/28/2006US7018881 Suspended gate single-electron device
03/28/2006US7018880 Method for manufacturing a MOS transistor having reduced 1/f noise
03/28/2006US7018879 Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH3 nitridation and post-deposition rapid thermal annealing
03/28/2006US7018877 Selective delamination of thin-films by interface adhesion energy contrasts and thin film transistor devices formed thereby
03/28/2006US7018876 Transistor with vertical dielectric structure
03/28/2006US7018875 Insulated-gate field-effect thin film transistors
03/28/2006US7018874 Method for fabricating thin-film transistor
03/28/2006US7018873 Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate
03/28/2006US7018863 Method of manufacture of a resistance variable memory cell
03/28/2006US7018854 Semiconductor device and method for manufacturing the same
03/28/2006US7018750 Exposing the silicon layer to a laser beam through a mask having a phase shift layer; stripes having a first width separated by slits, and an overlapping blocking layer having stripes having a narrower width and parallel to the first
03/28/2006US7018749 Crystallization apparatus, crystallization method, and phase shift mask and filter for use in these apparatus and method
03/28/2006US7018728 Single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer having p-type or n-type electrical conductivity or high resistance; light emitting diodes
03/28/2006US7018575 Method for assembly of complementary-shaped receptacle site and device microstructures
03/28/2006US7018552 Method of manufacturing electronic device
03/28/2006US7018551 Pull-back method of forming fins in FinFets
03/28/2006US7018484 Semiconductor-on-insulator silicon wafer and method of formation
03/28/2006US7018020 Structure with through hole, production method thereof, and liquid discharge head
03/28/2006US7017830 Method and apparatus for separating sample
03/23/2006WO2006031981A2 Nanotube transistor and rectifying devices
03/23/2006WO2006031777A2 Capacitive circuit element and method of using the same