| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/08/2007 | US20070032073 Method of substrate processing and apparatus for substrate processing |
| 02/08/2007 | US20070032053 Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same |
| 02/08/2007 | US20070032052 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/08/2007 | US20070032051 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/08/2007 | US20070032049 Process for manufacturing a semiconductor device |
| 02/08/2007 | US20070032042 Peeling method |
| 02/08/2007 | US20070032023 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/08/2007 | US20070032016 Protective layer in memory device and method therefor |
| 02/08/2007 | US20070032009 Semiconductor devices having strained dual channel layers |
| 02/08/2007 | US20070032001 Semiconductor device having a trench isolation and method of fabricating the same |
| 02/08/2007 | US20070031987 Method of operating image sensor |
| 02/08/2007 | US20070031588 Organic EL device and its manufacture method |
| 02/08/2007 | US20070030423 Liquid crystal display device |
| 02/08/2007 | US20070029669 Integrated circuit with low-stress under-bump metallurgy |
| 02/08/2007 | US20070029654 Electronic parts packaging structure and method of manufacturing the same |
| 02/08/2007 | US20070029645 High permeability layered films to reduce noise in high speed interconnects |
| 02/08/2007 | US20070029642 Heating and cooling of substrate support |
| 02/08/2007 | US20070029640 III- V group compound semiconductor device |
| 02/08/2007 | US20070029639 Edge intensive antifuse and method for making the same |
| 02/08/2007 | US20070029638 Semiconductor device and methods of protecting a semiconductor device |
| 02/08/2007 | US20070029637 Image sensor for reduced dark current |
| 02/08/2007 | US20070029636 Semiconductor Device and Manufacturing Method Thereof |
| 02/08/2007 | US20070029635 Semiconductor processing methods, semiconductor constructions, and electronic systems |
| 02/08/2007 | US20070029634 High speed diode |
| 02/08/2007 | US20070029633 Shottky diode and method for fabricating the same |
| 02/08/2007 | US20070029630 Integrated circuits with contemporaneously formed array electrodes and logic interconnects |
| 02/08/2007 | US20070029628 Semiconductor device and method of manufacturing the same |
| 02/08/2007 | US20070029627 Reducing the dielectric constant of a portion of a gate dielectric |
| 02/08/2007 | US20070029626 Semiconductor device, and method of fabricating the same |
| 02/08/2007 | US20070029625 Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer |
| 02/08/2007 | US20070029624 Fin-type field effect transistor |
| 02/08/2007 | US20070029623 Dual-gate field effect transistor |
| 02/08/2007 | US20070029622 Flash memory device and method of fabricating the same |
| 02/08/2007 | US20070029621 Semiconductor integrated circuit device |
| 02/08/2007 | US20070029620 Low-cost high-performance planar back-gate cmos |
| 02/08/2007 | US20070029619 Semiconductor devices having a recessed active edge and methods of fabricating the same |
| 02/08/2007 | US20070029618 Dual-gate device and method |
| 02/08/2007 | US20070029617 Semiconductor device and manufacturing method thereof |
| 02/08/2007 | US20070029616 Semiconductor integrated circuit device and method of fabricating the same |
| 02/08/2007 | US20070029610 Non-volatile memory and fabricating method thereof |
| 02/08/2007 | US20070029609 Array substrate having enhanced aperture ratio, method of manufacturing the same and display device having the same |
| 02/08/2007 | US20070029608 Offset spacers for CMOS transistors |
| 02/08/2007 | US20070029607 Dense arrays and charge storage devices |
| 02/08/2007 | US20070029606 Phase change material, phase change random access memory including the same, and methods of manufacturing and operating the same |
| 02/08/2007 | US20070029605 Semiconductor device and a method of manufacturing the same |
| 02/08/2007 | US20070029604 Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi-bit memory devices |
| 02/08/2007 | US20070029603 Method of fabricating cell of nonvolatile memory device with floating gate |
| 02/08/2007 | US20070029602 Non-volatile memory device and fabricating method thereof |
| 02/08/2007 | US20070029601 SONOS memory cell having high-K dielectric |
| 02/08/2007 | US20070029600 Nanowire based non-volatile floating-gate memory |
| 02/08/2007 | US20070029599 Semiconductor device |
| 02/08/2007 | US20070029598 Semiconductor device manufacturing method and semiconductor device |
| 02/08/2007 | US20070029597 High-voltage semiconductor device |
| 02/08/2007 | US20070029596 Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same |
| 02/08/2007 | US20070029595 Semiconductor device and manufacturing method therefor |
| 02/08/2007 | US20070029594 Ferroelectric capacitor and its manufacturing method and ferroelectric memory device |
| 02/08/2007 | US20070029593 Bismuth ferrite films and devices grown on silicon |
| 02/08/2007 | US20070029592 Oriented bismuth ferrite films grown on silicon and devices formed thereby |
| 02/08/2007 | US20070029588 Formation of low leakage thermally assisted radical nitrided dielectrics |
| 02/08/2007 | US20070029587 Mos varactor with segmented gate doping |
| 02/08/2007 | US20070029586 Multi-channel transistor structure and method of making thereof |
| 02/08/2007 | US20070029584 Method and apparatus for bending electrostatic switch |
| 02/08/2007 | US20070029583 Organic semiconductor sensor device |
| 02/08/2007 | US20070029579 CMOS image sensor and method for fabricating the same |
| 02/08/2007 | US20070029578 Non-volatile semiconductor memory device and process of manufacturing the same |
| 02/08/2007 | US20070029577 Field effect transistor and method of manufacturing the same |
| 02/08/2007 | US20070029574 Strained semiconductor devices |
| 02/08/2007 | US20070029573 Vertical-channel junction field-effect transistors having buried gates and methods of making |
| 02/08/2007 | US20070029569 Packages for semiconductor light emitting devices utilizing dispensed encapsulants and methods of packaging the same |
| 02/08/2007 | US20070029567 Element having microstructure and manufacturing method thereof |
| 02/08/2007 | US20070029554 Light-emitting device and manufacturing method thereof |
| 02/08/2007 | US20070029553 Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices |
| 02/08/2007 | US20070029552 Liquid crystal display panel and fabricating method thereof |
| 02/08/2007 | US20070029551 Thin film transistor substrate using a horizontal electric field |
| 02/08/2007 | US20070029550 Liquid crystal display apparatus |
| 02/08/2007 | US20070029547 Process for forming organic layers, organic electronic devices,and transistors |
| 02/08/2007 | US20070029546 Resistive memory cell, method for forming the same and resistive memory array using the same |
| 02/08/2007 | US20070029545 Pixel having an organic light emitting diode and method of fabricating the pixel |
| 02/08/2007 | US20070029544 Interconnected high speed electron tunneling devices |
| 02/08/2007 | US20070029543 Semiconductor device |
| 02/08/2007 | US20070029540 Semiconductor device |
| 02/08/2007 | US20070029539 Light-emitting element array and display apparatus |
| 02/08/2007 | US20070029526 A europium silicate-based orange phosphor having the formula (Sr1-xMx)yEuzSiO5, wherein M is at least one of a divalent metal selected from the group consisting of Ba, Mg, Ca, and Zn; ligh emitting diodes (LED) |
| 02/08/2007 | US20070028962 Low molecular weight conjugated nitrogen compounds and devices fabricated using the same |
| 02/08/2007 | DE3943833B4 MOS Vorrichtung MOS device |
| 02/08/2007 | DE19953178B4 Millimeterband-Halbleiterschaltkreis Millimeter-band semiconductor circuit |
| 02/08/2007 | DE19517975B4 CMOS-Schaltungsplättchen mit Polysilizium-Feldringstruktur CMOS circuit die with polysilicon field ring structure |
| 02/08/2007 | DE10357409B4 Verfahren zur Herstellung eines Doppelheterostruktur-Bipolartransistors für hohe Betriebsspannungen A method for producing a double heterostructure bipolar transistor for high operating voltages |
| 02/08/2007 | DE10351100B4 Verfahren zur Herstellung eines vertikalen PNP-Transistors aus einem Halbleiterwerkstoff und vertikaler bipolarer PNP-Transitor A method for producing a vertical PNP transistor made of a semiconductor material and a vertical PNP bipolar transitor |
| 02/08/2007 | DE10342547B4 Verfahren zum Herstellen einer integrierten Schaltungseinrichtung mit Durchkontaktierungselementen und Anschlusseinheiten A method of manufacturing an integrated circuit device with feedthrough terminal units and |
| 02/08/2007 | DE10330359B4 Verfahren zur Herstellung von InP-basierten Heterostruktur-Bipolartransistoren auf der Grundlage von III/V-Halbleitern A process for the production of InP-based heterostructure bipolar transistors on the basis of III / V semiconductors |
| 02/08/2007 | DE102005035699A1 Semiconductor component with charge compensating structure has vertical drift zone surrounded by charge compensation trench having anisotropic material of alternating conductance |
| 02/08/2007 | DE102005030886B3 Schaltungsanordnung mit einem Transistorbauelement und einem Freilaufelement Circuit arrangement having a transistor device, and a freewheeling element |
| 02/08/2007 | DE102004057237B4 Verfahren zum Herstellen von Kontaktlöchern in einem Halbleiterkörper sowie Transistor mit vertikalem Aufbau A method for producing contact holes in a semiconductor body, as well transistor with a vertical structure |
| 02/08/2007 | DE10141877B4 Halbleiterbauteil und Konvertereinrichtung Semiconductor device and converter means |
| 02/07/2007 | EP1750296A2 Ion implantation mask and method for manufacturing the mask and a SiC semiconductor device using the mask |
| 02/07/2007 | EP1749343A2 Schottky device |
| 02/07/2007 | EP1749316A2 Perylene n-type semiconductors and related devices |
| 02/07/2007 | EP1749311A1 Separately strained n-channel and p-channel transistors |
| 02/07/2007 | EP1749310A1 Substrate for electronic application comprising a flexible support and method for production thereof |