| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/01/2007 | US20070023838 Fabricating logic and memory elements using multiple gate layers |
| 02/01/2007 | US20070023835 Asymmetry thin-film transistor |
| 02/01/2007 | US20070023832 Semiconductor device and method of fabricating the same |
| 02/01/2007 | US20070023831 Field Effect Transistor and Application Device Thereof |
| 02/01/2007 | US20070023830 Semiconductor component with a low on-state resistance |
| 02/01/2007 | US20070023829 Split electrode gate trench power device |
| 02/01/2007 | US20070023828 Semiconductor device and method of manufacturing the same |
| 02/01/2007 | US20070023827 Semiconductor structure with improved on resistance and breakdown voltage performance |
| 02/01/2007 | US20070023826 Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device |
| 02/01/2007 | US20070023825 Semiconductor device |
| 02/01/2007 | US20070023824 Semiconductor memory device and manufacturing method for semiconductor memory device |
| 02/01/2007 | US20070023823 Nonvolatile semiconductor memory device and related method |
| 02/01/2007 | US20070023822 Programmable non-volatile memory (PNVM) device |
| 02/01/2007 | US20070023821 Semiconductor device and method of manufacturing the same |
| 02/01/2007 | US20070023820 Non-volatile memory device and methods of forming and operating the same |
| 02/01/2007 | US20070023819 Semiconductor device |
| 02/01/2007 | US20070023818 Flash memory and method for manufacturing thereof |
| 02/01/2007 | US20070023817 Structure and manufacturing method of multi-gate dielectric thicknesses for planar double gate device having multi-threshold voltages |
| 02/01/2007 | US20070023816 EEPROM flash memory device with jagged edge floating gate |
| 02/01/2007 | US20070023815 Non-volatile memory device and associated method of manufacture |
| 02/01/2007 | US20070023814 Nonvolatile memory semiconductor device and method for manufacturing same |
| 02/01/2007 | US20070023813 Semiconductor device having upper electrode and method of fabricating the same |
| 02/01/2007 | US20070023811 Vertical p-n junction device and method of forming same |
| 02/01/2007 | US20070023810 Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device |
| 02/01/2007 | US20070023809 Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity |
| 02/01/2007 | US20070023808 Semiconductor memory, the fabrication thereof and a method for operating the semiconductor memory |
| 02/01/2007 | US20070023807 Magnetic memory |
| 02/01/2007 | US20070023806 Method and structure for forming slot via bitline for MRAM devices |
| 02/01/2007 | US20070023805 Reverse construction memory cell |
| 02/01/2007 | US20070023795 Semiconductor device and method of fabricating the same |
| 02/01/2007 | US20070023794 Stacked semiconductor device and related method |
| 02/01/2007 | US20070023793 Trench-gate semiconductor device and manufacturing method of trench-gate semiconductor device |
| 02/01/2007 | US20070023792 Transistor and transistor manufacturing method |
| 02/01/2007 | US20070023790 Manufacturing method of semiconductor device |
| 02/01/2007 | US20070023789 Multiport single transistor bit cell |
| 02/01/2007 | US20070023788 Solid-state image pickup device, method of driving solid-state image pickup device and imaging apparatus |
| 02/01/2007 | US20070023787 Drive unit for charge coupled devices and driving method for charge coupled devices |
| 02/01/2007 | US20070023786 CMOS imager with wide dynamic range Pixel |
| 02/01/2007 | US20070023779 Semiconductor device |
| 02/01/2007 | US20070023773 Semiconductor light-emitting device |
| 02/01/2007 | US20070023770 Optical semiconductor device and method for manufacturing the same |
| 02/01/2007 | US20070023761 Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device |
| 02/01/2007 | US20070023760 Thin film transistor substrate |
| 02/01/2007 | US20070023759 Thin film transistor, circuit apparatus and liquid crystal display |
| 02/01/2007 | US20070023758 Semiconductor device and manufacturing method thereof |
| 02/01/2007 | US20070023757 Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistor |
| 02/01/2007 | US20070023756 Virtual body-contacted trigate |
| 02/01/2007 | US20070023755 Programming optical device |
| 02/01/2007 | US20070023754 High aperture LCD with insulating color filters overlapping bus lines on active substrate |
| 02/01/2007 | US20070023753 Fabricating method for a liquid crystal display of horizontal electric field applying type |
| 02/01/2007 | US20070023752 Transistor array panel, liquid crystal display panel, and method of manufacturing liquid crystal display panel |
| 02/01/2007 | US20070023751 Thin film device, thin film device module, and method of forming thin film device module |
| 02/01/2007 | US20070023750 Semiconductor device |
| 02/01/2007 | US20070023749 Organic thin film transistor |
| 02/01/2007 | US20070023747 Positive charging photoreceptor |
| 02/01/2007 | US20070023746 Encapsulation layer for electronic devices |
| 02/01/2007 | US20070023743 PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY MEMORY |
| 02/01/2007 | US20070022947 Process for preparing p-n junctions having a p-type ZnO film |
| 02/01/2007 | US20070022599 Edge intensive antifuse and method for making the same |
| 02/01/2007 | DE19946999B4 Verfahren zur Herstellung ferroelektrischer Speichereinrichtungen Process for the preparation of ferroelectric memory devices |
| 02/01/2007 | DE19908809B4 Verfahren zur Herstellung einer MOS-Transistorstruktur mit einstellbarer Schwellspannung A method of manufacturing a MOS transistor structure with an adjustable threshold voltage |
| 02/01/2007 | DE19860962B4 Semiconductor device e.g. power semiconductor with trench MOS gate |
| 02/01/2007 | DE10320598B4 Verfahren zum Herstellen eines Transistors mit einen flachen Implantierung durch Verwendung eines zweistufigen Epitaxialschichtprozesses A method for manufacturing a transistor with a shallow implantation by using a two-stage Epitaxialschichtprozesses |
| 02/01/2007 | DE10214066B4 Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben Of the same semiconductor device with a retrograde doping profile in a channel region and methods for preparing |
| 02/01/2007 | DE102005060642A1 Halbleiterdrucksensor Semiconductor pressure sensor |
| 02/01/2007 | DE102005041838B3 Semiconductor component with space saving edge structure with more highly doped side region |
| 02/01/2007 | DE102005035153A1 Semiconductor component e.g. power transistor, has drift zone, and drift control zone made of semiconductor material and arranged adjacent to drift zone in body, where accumulation dielectric is arranged between zones |
| 02/01/2007 | DE102005035061A1 Elektrische Kontakteinrichtung Electrical contact means |
| 02/01/2007 | DE102005034485A1 Verbindungselement für ein Halbleiterbauelement und Verfahren zu dessen Herstellung Connecting element for a semiconductor device and process for its preparation |
| 02/01/2007 | DE102005034120A1 Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe Semiconductor wafer and method for manufacturing a semiconductor wafer |
| 02/01/2007 | DE102005026408B3 Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone A process for producing a stop zone in a semiconductor body and the semiconductor device having a stop zone |
| 02/01/2007 | DE102005023882B3 High speed diode contain vertically arranged seqeuntial heavily doped N-zones and weakly doped P-zone in semiconductor body starting from its rear side |
| 02/01/2007 | DE102004033148B4 Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung zur Verwendung als Doppelgate-Feldeffekttransistor A method for producing a layer arrangement and layer arrangement for use as a dual gate field effect transistor |
| 02/01/2007 | DE10004200B4 Transistorvorrichtung mit MOS-Struktur, in der eine Änderung der Ausgangsimpedanz aufgrund eines Herstellungsfehlers reduziert ist, Verfahren zu deren Herstellung sowie hierdurch ausgebildete CMOS-Schaltung Transistor device having the MOS structure, in which a change of the output impedance is reduced due to a manufacturing error, process for their preparation and thereby formed CMOS circuit |
| 02/01/2007 | CA2611066A1 Switch mode power amplifier using fet with field plate extension |
| 01/31/2007 | EP1748493A1 Memory cell with one transistor with isolated body and improved read sensitivity |
| 01/31/2007 | EP1748492A1 Semiconductor device and semiconductor device manufacturing method |
| 01/31/2007 | EP1748477A2 Patterned-print thin-film transistors with top gate geometry |
| 01/31/2007 | EP1748473A2 Non-volatile memory transistor with distributed charge storage sites |
| 01/31/2007 | EP1748472A1 Non-volatile memory transistor |
| 01/31/2007 | EP1747589A1 Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions |
| 01/31/2007 | EP1747588A2 Illuminable gaas switching component with a transparent housing, and microwave circuit therewith |
| 01/31/2007 | EP1747586A1 Method of manufacturing a solid image pick-up device and a solid image pick-up device |
| 01/31/2007 | EP1747582A2 Low-voltage single-layer polysilicon eeprom memory cell |
| 01/31/2007 | EP1747579A1 Implanted counted dopant ions |
| 01/31/2007 | EP1285261A4 Field effect transistor device for ultra-fast nucleic acid sequencing |
| 01/31/2007 | CN1906771A Vertical field effect transistor and method for fabricating the same |
| 01/31/2007 | CN1906770A Transistor including a deposited channel region having a doped portion |
| 01/31/2007 | CN1906769A Vertical fin-fet mos devices |
| 01/31/2007 | CN1906768A Semiconductor device and method for manufacturing same |
| 01/31/2007 | CN1906767A Semiconductor device and method for manufacturing same |
| 01/31/2007 | CN1906766A Semiconductor device module structure |
| 01/31/2007 | CN1906765A Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
| 01/31/2007 | CN1906764A Gradient deposition of low-k cvd materials |
| 01/31/2007 | CN1906763A Solid state image pikup device and its manufacturing method |
| 01/31/2007 | CN1906762A Discriminative SOI with oxide holes underneath DC source/drain |
| 01/31/2007 | CN1906756A Pillar cell flash memory technology |
| 01/31/2007 | CN1906753A System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
| 01/31/2007 | CN1906752A Stress free etch processing in combination with a dynamic liquid meniscus |
| 01/31/2007 | CN1906751A System and method for stress free conductor removal |