Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2007
01/31/2007CN1906743A Method for forming a memory structure using a modified surface topography and structure thereof
01/31/2007CN1906742A Method of forming thin sgoi wafers with high relaxation and low stacking fault defect density
01/31/2007CN1906650A Display device and its fabrication method
01/31/2007CN1906529A Display device manufacturing method and display device
01/31/2007CN1906527A Display device and manufacturing method of the same
01/31/2007CN1906332A Nano-array electrode manufacturing method and photoelectric converter using same
01/31/2007CN1906324A Ion implantation method and ion implantation device
01/31/2007CN1905214A Non-volatile memory device and associated method of manufacture
01/31/2007CN1905213A Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device
01/31/2007CN1905212A Transistor and method for forming the same
01/31/2007CN1905211A Strained channel transistor and method of fabricating the same
01/31/2007CN1905210A Field effect transistor and method of manufacturing a field effect transistor
01/31/2007CN1905209A Semiconductor device and method for fabricating the same
01/31/2007CN1905208A Semiconductor wafer and method of manufacturing semiconductor device
01/31/2007CN1905200A Wiring base plate and making method, electro-optic device and method of manufacturing same, electronic device and making method
01/31/2007CN1905197A Semiconductor memory, the fabrication thereof and a method for operating the semiconductor memory
01/31/2007CN1905196A EEPROM component and its making method
01/31/2007CN1905189A Semiconductor device and boosting circuit
01/31/2007CN1905187A 半导体器件及其制作方法 Semiconductor device and manufacturing method thereof
01/31/2007CN1905169A Semiconductor device and its manufacturing method
01/31/2007CN1905138A Semiconductor device and method of fabricating the same
01/31/2007CN1905132A Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device
01/31/2007CN1905131A Semiconductor device and process for producing same
01/31/2007CN1904703A 晶体管阵列面板 Transistor array panel
01/31/2007CN1298057C Semiconductor device
01/31/2007CN1298019C Film pattern forming method and device, and active matrix substrate manufacturing method
01/31/2007CN1297846C Thin film transistor liquid crystal display with locality multi-domain perpendicular direction matching mode
01/30/2007US7170795 Electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
01/30/2007US7170791 Programming verification method of nonvolatile memory cell, semiconductor memory device, and portable electronic apparatus having the semiconductor memory device
01/30/2007US7170786 Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
01/30/2007US7170771 Method of reading a data bit including detecting conductivity of a volume of alloy exposed to an electron beam
01/30/2007US7170576 Thin film transistor array substrate and fabricating method thereof
01/30/2007US7170573 Array substrate for transflective liquid crystal display device and method for manufacturing the same
01/30/2007US7170571 Liquid crystal display device with double metal layer source and drain electrodes and fabricating method thereof
01/30/2007US7170484 Display device
01/30/2007US7170189 Semiconductor wafer and testing method therefor
01/30/2007US7170184 Treatment of a ground semiconductor die to improve adhesive bonding to a substrate
01/30/2007US7170181 Optimum padset for wire bonding RF technologies with high-Q inductors
01/30/2007US7170178 Capacitive integrated circuit structure
01/30/2007US7170176 Semiconductor device
01/30/2007US7170175 Semiconductor device and production method thereof
01/30/2007US7170174 Contact structure and contact liner process
01/30/2007US7170173 Magnetically lined conductors
01/30/2007US7170172 Semiconductor device having a roughened surface
01/30/2007US7170170 Bump for semiconductor package, semiconductor package applying the bump, and method for fabricating the semiconductor package
01/30/2007US7170169 LGA socket with EMI protection
01/30/2007US7170148 Semi-fusible link system for a multi-layer integrated circuit and method of making same
01/30/2007US7170146 TFT structure and method for manufacturing the same
01/30/2007US7170144 System-on-chip with shield rings for shielding functional blocks therein from electromagnetic interference
01/30/2007US7170141 Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
01/30/2007US7170140 Microelectromechanical system
01/30/2007US7170139 Semiconductor constructions
01/30/2007US7170138 Semiconductor device
01/30/2007US7170137 Semiconductor device and method of manufacturing the same
01/30/2007US7170134 Semiconductor device
01/30/2007US7170133 Transistor and method of fabricating the same
01/30/2007US7170132 Twin insulator charge storage device operation and its fabrication method
01/30/2007US7170131 Flash memory array with increased coupling between floating and control gates
01/30/2007US7170130 Memory cell with reduced DIBL and Vss resistance
01/30/2007US7170129 Non-volatile memory, fabrication method thereof and operation method thereof
01/30/2007US7170128 Multi-bit nanocrystal memory
01/30/2007US7170127 Semiconductor device and fabricating method thereof
01/30/2007US7170126 Structure of vertical strained silicon devices
01/30/2007US7170125 Capacitor with electrodes made of ruthenium and method for patterning layers made of ruthenium or ruthenium
01/30/2007US7170124 Trench buried bit line memory devices and methods thereof
01/30/2007US7170123 Antiferromagnetically stabilized pseudo spin valve for memory applications
01/30/2007US7170122 Ferroelectric polymer memory with a thick interface layer
01/30/2007US7170121 Computer system architecture using a proximity I/O switch
01/30/2007US7170120 Carbon nanotube energy well (CNEW) field effect transistor
01/30/2007US7170119 Vertical type semiconductor device
01/30/2007US7170118 Field effect transistor (FET) device having corrugated structure and method for fabrication thereof
01/30/2007US7170117 Image sensor with improved dynamic range and method of formation
01/30/2007US7170115 Semiconductor integrated circuit device and method of producing the same
01/30/2007US7170113 Semiconductor device and method of manufacturing the same
01/30/2007US7170112 Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
01/30/2007US7170111 Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
01/30/2007US7170110 Semiconductor device and method for fabricating the same
01/30/2007US7170109 Heterojunction semiconductor device with element isolation structure
01/30/2007US7170108 Semiconductor light-emitting device and method for fabricating the same
01/30/2007US7170107 IC chip having a protective structure
01/30/2007US7170106 Power semiconductor device
01/30/2007US7170105 Type II interband heterostructure backward diodes
01/30/2007US7170104 Arrangement with p-doped and n-doped semiconductor layers and method for producing the same
01/30/2007US7170103 Wafer with vertical diode structures
01/30/2007US7170100 Packaging designs for LEDs
01/30/2007US7170097 Inverted light emitting diode on conductive substrate
01/30/2007US7170096 Antimonide-based optical devices
01/30/2007US7170095 Semi-insulating GaN and method of making the same
01/30/2007US7170094 Light emitting device, driving method of light emitting device and electronic device
01/30/2007US7170093 Dielectric materials for electronic devices
01/30/2007US7170092 Flat panel display and fabrication method thereof
01/30/2007US7170090 Method and structure for testing metal-insulator-metal capacitor structures under high temperature at wafer level
01/30/2007US7170089 (4,5,9,10-Tetrahydro-pyren-2-yl)-carbamic acid 4-(2-methylsulfanyl-alkyl)-3,5-dinitro-benzyl ester, method of synthesizing thereof, and molecular electronic device using the same
01/30/2007US7170088 Organic thin film transistor and flat panel display comprising the same
01/30/2007US7170087 EL device and method for manufacturing the same
01/30/2007US7170085 Frequency selective terahertz radiation detector
01/30/2007US7170084 Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication
01/30/2007US7170083 Bipolar transistor with collector having an epitaxial Si:C region
01/30/2007US7169714 Method and structure for graded gate oxides on vertical and non-planar surfaces
01/30/2007US7169710 Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same