Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2007
02/15/2007US20070035031 Sub-resolution assist feature to improve symmetry for contact hole lithography
02/15/2007US20070035026 Via in semiconductor device
02/15/2007US20070035023 Semiconductor device having improved mechanical and thermal reliability
02/15/2007US20070035021 Printed circuit board and electronic apparatus including printed circuit board
02/15/2007US20070034991 Semiconductor device
02/15/2007US20070034990 Method for manufacturing a resistor
02/15/2007US20070034989 Capacitive element, method of manufacture of the same, and semiconductor device
02/15/2007US20070034988 Metal-Insulator-Metal (MIM) Capacitors Formed Beneath First Level Metallization and Methods of Forming Same
02/15/2007US20070034987 Photocathode structure and operation
02/15/2007US20070034986 Semiconductor device
02/15/2007US20070034984 Chip-scale schottky device
02/15/2007US20070034976 Micromechanical capacitive transducer and method for manufacturing the same
02/15/2007US20070034975 Contacting a surface/electrode with a compound such as ferrocene-zinc porphyrin bearing an acid hydrazide, reacting with electrolyte
02/15/2007US20070034974 Semiconductor device and manufacturing method thereof
02/15/2007US20070034973 Methods and Apparatus for Operating a Transistor Using a Reverse Body Bias
02/15/2007US20070034972 Tri-gate devices and methods of fabrication
02/15/2007US20070034971 Chevron CMOS trigate structure
02/15/2007US20070034970 Semiconductor device and method of fabricating the same
02/15/2007US20070034969 Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor
02/15/2007US20070034968 Semiconductor integrated circuit device and a method of manufacturing the same
02/15/2007US20070034967 Metal gate mosfet by full semiconductor metal alloy conversion
02/15/2007US20070034966 Dual gate CMOS semiconductor devices and methods of fabricating such devices
02/15/2007US20070034965 CMOS Image Sensor Having Drive Transistor with Increased Gate Surface Area and Method of Manufacturing the Same
02/15/2007US20070034964 Dual gate structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method
02/15/2007US20070034963 Semiconductor device with close stress liner film and method of manufacturing the same
02/15/2007US20070034962 Transistor and method of manufacturing the same
02/15/2007US20070034961 Semiconductor device, display device, and electronic device
02/15/2007US20070034959 Integrated circuit arrangements with ESD-resistant capacitor and corresponding method of production
02/15/2007US20070034955 Nonvolatile semiconductor integrated circuit devices and fabrication methods thereof
02/15/2007US20070034952 Method of manufacturing semiconductor device having impurity region under isolation region
02/15/2007US20070034949 Semiconductor device having multiple source/drain extension implant portions and a method of manufacture therefor
02/15/2007US20070034948 Silicidation process for an nmos transistor and corresponding integrated circuit
02/15/2007US20070034947 Semiconductor device having deep trench charge compensation regions and method
02/15/2007US20070034946 Semiconductor device
02/15/2007US20070034945 PMOS transistor strain optimization with raised junction regions
02/15/2007US20070034944 Power LDMOS transistor
02/15/2007US20070034943 Insulated gate semiconductor device and manufacturing method thereof
02/15/2007US20070034941 Deep N diffusion for trench IGBT
02/15/2007US20070034940 MOS semiconductor device
02/15/2007US20070034939 Image sensors with enhanced charge transmission characteristics
02/15/2007US20070034938 Non-volatile memory devices and methods of forming non-volatile memory devices
02/15/2007US20070034937 Semiconductor device and a method of manufacturing the same
02/15/2007US20070034936 Two-transistor memory cell and method for manufacturing
02/15/2007US20070034935 Nonvolatile semiconductor memory device and a method of the same
02/15/2007US20070034934 Semiconductor memory device with a stacked gate including a floating gate and a control gate and method of manufacturing the same
02/15/2007US20070034933 Flash memory device utilizing nanocrystals embedded in polymer
02/15/2007US20070034932 NOR flash memory devices and methods of fabricating the same
02/15/2007US20070034931 Systems and methods for memory structure comprising a PPROM and an embedded flash memory
02/15/2007US20070034930 Discrete trap non-volatile multi-functional memory device
02/15/2007US20070034929 Flash memory device and method of manufacturing the same
02/15/2007US20070034928 Capacitor structure for two-transistor dram memory cell and method of forming same
02/15/2007US20070034927 Trench storage capacitor
02/15/2007US20070034926 Asymmetric field effect transistor
02/15/2007US20070034925 Fin-field effect transistors (Fin-FETs) having protection layers
02/15/2007US20070034924 Semiconductor device and method of manufacturing the same
02/15/2007US20070034923 Devices with different electrical gate dielectric thicknesses but with substantially similar physical configurations
02/15/2007US20070034922 Integrated surround gate multifunctional memory device
02/15/2007US20070034921 Access transistor for memory device
02/15/2007US20070034920 Semiconductor memory cell and corresponding method of producing same
02/15/2007US20070034919 MRAM with super-paramagnetic sensing layer
02/15/2007US20070034918 Ferroelectric film, semiconductor device, ferroelectric film manufacturing method, and ferroelectric film manufacturing apparatus
02/15/2007US20070034915 Transparent double-injection field-effect transistor
02/15/2007US20070034914 Isolation trench geometry for image sensors
02/15/2007US20070034913 Semiconductor device and method of fabricating same
02/15/2007US20070034912 Low voltage CMOS structure with dynamic threshold voltage
02/15/2007US20070034911 Metal-oxide-semiconductor transistor and method of manufacturing the same
02/15/2007US20070034910 Fabrication method of spiral inductor on porous glass substrate
02/15/2007US20070034909 Nanometer-scale semiconductor devices and method of making
02/15/2007US20070034908 Phase change random access memory device
02/15/2007US20070034907 Image sensor with improved dynamic range and method of formation
02/15/2007US20070034906 MOS devices with reduced recess on substrate surface
02/15/2007US20070034905 Phase-change memory device and its methods of formation
02/15/2007US20070034904 Efficient transistor structure
02/15/2007US20070034903 Efficient transistor structure
02/15/2007US20070034901 Trench junction barrier controlled Schottky
02/15/2007US20070034897 ESD protecting circuit and manufacturing method thereof
02/15/2007US20070034896 Silicon-controlled rectifier for electrostatic discharge protection circuits and structure thereof
02/15/2007US20070034895 Folded-gate MOS transistor
02/15/2007US20070034894 Semiconductor device including field effect transistor for use as a high-speed switching device and a power device
02/15/2007US20070034893 Solid-state image pickup device and manufacturing method of the same
02/15/2007US20070034885 Green-emitting led
02/15/2007US20070034884 Pixel cells in a honeycomb arrangement
02/15/2007US20070034879 Liquid crystal display
02/15/2007US20070034878 Semiconductor device and method for manufacturing the same
02/15/2007US20070034877 Semiconductor device and semiconductor device producing system
02/15/2007US20070034876 Semiconductor device
02/15/2007US20070034875 Light-emitting device
02/15/2007US20070034874 Semiconductor device and method for manufacturing the same
02/15/2007US20070034873 Semiconductor device and semiconductor display device
02/15/2007US20070034872 Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process
02/15/2007US20070034871 Thin film transistor and method of manufacturing the same
02/15/2007US20070034870 Semiconductor device and method of fabricating the same
02/15/2007US20070034867 Organic thin film transistor and flat panel display device using the same
02/15/2007US20070034866 Laser induced thermal imaging (LITI) mask and an organic electroluminescent device fabrication method using the mask
02/15/2007US20070034865 Memory device and a semiconductor device
02/15/2007US20070034864 Organic light-emitting device with improved layer conductivity distribution
02/15/2007US20070034862 Electronic device comprising an organic semiconductor, an organic semiconductor, and an intermediate buffer layer made of a polymer that is cationically polymerizable and contains no photoacid
02/15/2007US20070034861 Field effect type organic transistor and process for production thereof
02/15/2007US20070034860 Field effect organic transistor
02/15/2007US20070034859 Electroluminescent device